Renesas NP80N04NHE-S18-AY

Overview

NP80N04NHE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers 80 A continuous drain current at TC = 25°C, features 8.0 mΩ maximum RDS(on) at VGS = 10 V and ID = 40 A, includes a built-in gate protection diode, and operates with 175°C channel temperature rating.

For engineers reviewing the NP80N04NHE-S18-AY datasheet, NP80N04NHE-S18-AY pinout, NP80N04NHE-S18-AY application, or NP80N04NHE-S18-AY equivalent, this device is selected for high-efficiency, high-reliability power switching where low conduction loss, robust avalanche capability (169 mJ at Tch = 25°C), and TO-262 package thermal performance are critical design requirements.

Technical Context

This MOSFET uses a planar silicon process optimized for low RDS(on) and fast switching. Its gate threshold voltage range of 2.0–4.0 V ensures stable turn-on under standard 10 V gate drive, while its 2200 pF typical input capacitance supports efficient gate driving with moderate-current drivers.

The device integrates a monolithic gate protection diode to suppress ESD transients, and its avalanche-rated structure enables operation in inductive load switching without external snubbers in many applications. Thermal resistance from channel to case is 1.25°C/W, enabling high-power dissipation when mounted on heatsinks.

Key Specifications

Pinout & Package

NP80N04NHE-S18-AY is housed in a TO-262 (MP-25SK) package with 4 terminals: Gate, Drain, Source, and integral metal fin (Drain-connected tab). The package weighs 1.8 g and features a 13.7 mm × 10.0 mm footprint with 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP80NF04L and IRF1404ZPBF, NP80N04NHE-S18-AY provides verified gate protection and optimized thermal resistance in TO-262, making it preferable for space-constrained, high-reliability industrial switching where ESD immunity and heatsink interface efficiency are prioritized over marginal RDS(on) reduction.

Availability

NP80N04NHE-S18-AY is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solenoid control systems, and high-efficiency DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for NP80N04NHE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and automotive markets.

NP80N04NHE-S18-AY belongs to Renesas' legacy "NP" series of high-current N-channel MOSFETs, engineered specifically for ruggedized industrial power switching applications demanding high avalanche tolerance and long-term reliability under thermal stress.

FAQ

What is the maximum continuous drain current rating for NP80N04NHE-S18-AY?

The NP80N04NHE-S18-AY is rated for ±80 A continuous drain current at case temperature TC = 25°C, calculated based on maximum allowable channel temperature of 175°C. At higher case temperatures, current must be derated per the datasheet's derating curve-e.g., ~50 A at TC = 100°C. This rating assumes proper heatsinking and PCB copper area per Renesas' recommended layout guidelines.

Does NP80N04NHE-S18-AY include integrated gate protection?

Yes, NP80N04NHE-S18-AY incorporates a monolithic gate-to-source Zener diode that clamps transient voltages to ±20 V, providing built-in ESD protection. This feature reduces the need for external gate protection components in many industrial applications, though Renesas recommends additional external protection if the device may experience voltage spikes exceeding its absolute maximum ratings.

What is the RDS(on) specification for NP80N04NHE-S18-AY and how is it measured?

NP80N04NHE-S18-AY has a maximum RDS(on) of 8.0 mΩ, measured at VGS = 10 V and ID = 40 A with TA = 25°C. The typical value is 6.2 mΩ. This parameter defines conduction loss under standard gate drive conditions and directly impacts thermal design-e.g., at 40 A, worst-case power dissipation is 12.8 W, requiring appropriate heatsinking to maintain Tch ≤ 175°C.

Which package type does NP80N04NHE-S18-AY use and what are its mechanical highlights?

NP80N04NHE-S18-AY uses the TO-262 (MP-25SK) package-a surface-mount variant of TO-220 with a non-leaded, isolated drain tab. Key features include 13.7 mm × 10.0 mm footprint, 2.54 mm lead pitch, 1.8 g mass, and a thermally enhanced metal fin (pin 4) electrically connected to the drain for direct heatsink mounting and low Rth(ch-C) of 1.25°C/W.

Is NP80N04NHE-S18-AY RoHS compliant and what is its lead finish?

Yes, NP80N04NHE-S18-AY is RoHS compliant with pure tin (Sn) lead plating, as confirmed in the ordering information table. It contains no lead in external electrodes and meets JEDEC J-STD-020 reflow standards, supporting peak reflow temperatures up to 260°C for ≤10 seconds. The "-AY" suffix explicitly denotes Pb-free plating per Renesas documentation.