My Inquiry
My Account
Renesas NP80N04PDG-E1B-AY
- Part No.:
- NP80N04PDG-E1B-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP80N04PDG-E1B-AY.pdf
- Description:
- MOSFET N-CH 40V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NP80N04PDG-E1B-AY from Renesas Electronics is an N-channel power MOSFET in TO-263 (D²PAK) package, rated for 40 V VDSS, ±80 A DC drain current, and 4.5 mΩ max RDS(on) at VGS = 10 V / ID = 40 A. It features logic-level gate drive compatibility (VGS(th) = 1.4–2.5 V), low input capacitance (Ciss = 4600 pF typ.), and AEC-Q101 qualification for automotive switching applications including DC-DC converters and motor drivers.
For engineers reviewing the NP80N04PDG-E1B-AY datasheet, NP80N04PDG-E1B-AY pinout, NP80N04PDG-E1B-AY application, or NP80N04PDG-E1B-AY equivalent, key selection criteria include its 4.5 mΩ on-resistance at 10 V gate drive, 8.7 mΩ at 4.5 V, 115 W case-power dissipation, 1.30 °C/W channel-to-case thermal resistance, and TO-263 lead-free packaging with tape-and-reel delivery.
Technical Context
This MOSFET employs a planar trench-gate structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.4–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while its 90–135 nC total gate charge supports efficient PWM operation up to several hundred kHz in hard-switched topologies.
The device integrates a robust body diode with 0.94–1.5 V forward voltage at 80 A and 39 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage in off-state; suitable for 24 V and 36 V nominal bus systems. |
| RDS(on) (VGS = 10 V) | 4.5 mΩ max - Enables <1.8 W conduction loss at 80 A DC, critical for high-efficiency power stages. |
| RDS(on) (VGS = 4.5 V) | 8.7 mΩ max - Ensures usable on-resistance with 5 V microcontroller GPIOs or low-voltage gate drivers. |
| ID(DC) | ±80 A - Rated continuous drain current at TC = 25°C; derates linearly above 25°C case temperature. |
| Ciss | 4600 pF typ. - Low input capacitance reduces gate drive power and improves switching speed stability. |
| QG | 90–135 nC - Total gate charge determines required driver peak current and influences switching loss trade-offs. |
| Tch max | 175°C - Maximum channel temperature rating enables operation in under-hood automotive environments. |
| Rth(ch-C) | 1.30 °C/W - Low thermal resistance allows high power dissipation with minimal heatsink requirement. |
Pinout & Package
NP80N04PDG-E1B-AY uses the TO-263 (MP-25ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The package weighs ~1.5 g and features pure Sn (lead-free) plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Gate | Control terminal | Receives gate drive signal; requires ESD protection and controlled slew rate to avoid oscillation. |
| 2. Drain | High-side power node | Connected to power rail or inductive load; electrically tied to exposed metal tab (Drain). |
| 3. Source | Return path / reference node | Serves as common return for gate drive and load current; defines local ground for driver IC. |
| 4. Fin (Drain) | Thermal & electrical drain connection | Exposed copper pad on bottom surface; must be soldered to large PCB copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.4–2.5 V enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry. |
| Low RDS(on) at 4.5 V | 8.7 mΩ max ensures <5.6 W conduction loss at 80 A, reducing thermal stress in space-constrained designs. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock testing. |
| Robust body diode | 39 ns trr and 39 nC Qrr support efficient freewheeling in motor control and synchronous rectifier applications. |
| Pb-free TO-263 package | Meets RoHS Directive; compatible with standard IR reflow profiles (peak 260°C, ≤10 s). |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
|
Use Scenario: High-current step-down conversion in 12 V/24 V vehicle subsystems (e.g., ADAS camera modules, infotainment power rails). IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 200–500 kHz. Use Value: 4.5 mΩ RDS(on) minimizes conduction loss, while 1.30 °C/W Rth(ch-C) enables compact heatsinking in confined under-dash spaces. |
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC blowers or industrial pumps. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 60–80 A phase current with PWM commutation. Use Value: Logic-level gate threshold ensures full enhancement with 5 V gate drivers; 39 ns body diode trr suppresses shoot-through risk during dead-time transitions. |
| Server VRMs | Renewable Energy Inverters |
|
Use Scenario: Point-of-load (POL) converter supplying core voltage to high-performance CPUs or FPGAs in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, operating with tight duty-cycle control. Use Value: 8.7 mΩ RDS(on) at 4.5 V supports efficient operation with 5 V gate drive from digital PWM controllers, reducing system BOM count. |
Use Scenario: DC link switching in string inverters for residential solar PV systems (400–600 V DC input, 230 V AC output). IC Role / Device Role / Timing Role: Auxiliary switch in soft-start circuit or auxiliary DC-DC bias supply for gate drivers. Use Value: AEC-Q101 qualification provides extended lifetime and failure-rate predictability in outdoor, thermally cycled environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N4LH5AG | 40 V, 110 A, RDS(on) = 3.2 mΩ @ 10 V; TO-263 package; no AEC-Q101 certification. | Higher current rating but lacks automotive qualification; suited for industrial/commercial use only. | Select when higher peak current headroom is needed and automotive compliance is not required. |
| IRF1404ZPBF | 40 V, 195 A, RDS(on) = 4.7 mΩ @ 10 V; TO-220 package; non-logic-level (VGS(th) = 2.0–4.0 V). | Larger package footprint and higher gate charge (170 nC); requires stronger gate driver for same switching speed. | Choose for legacy TO-220 layouts where board redesign is impractical and gate drive voltage ≥10 V is available. |
Compared with STL110N4LH5AG and IRF1404ZPBF, NP80N04PDG-E1B-AY delivers optimal balance of logic-level drive, AEC-Q101 compliance, and thermal efficiency in TO-263 form factor-making it preferred for new automotive and high-reliability industrial designs where gate drive simplicity and qualification are mandatory.
Availability
NP80N04PDG-E1B-AY is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server point-of-load regulators requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for NP80N04PDG-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.
NP80N04PDG-E1B-AY belongs to Renesas' high-current N-channel power MOSFET product line, engineered for automotive-grade switching efficiency, thermal robustness, and logic-level compatibility in demanding 12–48 V systems.
FAQ
What is the maximum continuous drain current rating for NP80N04PDG-E1B-AY?
The NP80N04PDG-E1B-AY is rated for ±80 A DC drain current at TC = 25°C. This rating decreases linearly with increasing case temperature per the derating curve in the datasheet, reaching zero at approximately 175°C case temperature. For sustained 80 A operation, adequate heatsinking maintaining TC ≤ 25°C is required.
Is NP80N04PDG-E1B-AY qualified for automotive applications?
Yes, NP80N04PDG-E1B-AY is explicitly AEC-Q101 qualified, as confirmed in the official Renesas datasheet D19795EJ1V0DS. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing-ensuring suitability for under-hood and other automotive environments.
What is the gate threshold voltage range of NP80N04PDG-E1B-AY?
The gate threshold voltage (VGS(th)) of NP80N04PDG-E1B-AY is specified as 1.4 V (min) to 2.5 V (max) at ID = 250 μA and VDS = VGS. This logic-level range ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs, eliminating need for gate driver boost stages in many applications.
Does NP80N04PDG-E1B-AY have a built-in body diode, and what are its key parameters?
Yes, NP80N04PDG-E1B-AY integrates a body diode with typical forward voltage VF(S-D) = 0.94 V at IF = 80 A and VGS = 0 V. Its reverse recovery time trr is 39 ns and reverse recovery charge Qrr is 39 nC under specified test conditions (di/dt = 100 A/μs), supporting efficient freewheeling in hard-switched topologies.
What package type and mounting method does NP80N04PDG-E1B-AY use?
NP80N04PDG-E1B-AY uses the TO-263 (MP-25ZP) surface-mount package with an exposed drain pad. It is supplied in tape-and-reel format (1000 pcs/reel) and requires infrared reflow soldering with peak temperature ≤260°C for ≤10 seconds. The exposed pad must be soldered to a large PCB copper area for effective thermal conduction.
NP80N04PDG-E1B-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 115W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-3
NP80N04PDG-E1B-AY FAQ
1.How can I place an order for NP80N04PDG-E1B-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP80N04PDG-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP80N04PDG-E1B-AY reliable?
The price and inventory of NP80N04PDG-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04PDG-E1B-AY is usually 5 days.
3.What payment methods are accepted for NP80N04PDG-E1B-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04PDG-E1B-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP80N04PDG-E1B-AY?
NP80N04PDG-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP80N04PDG-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP80N04PDG-E1B-AY?
For technical support, including NP80N04PDG-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04PDG-E1B-AY requirements.
6.How does Aetrix verify that NP80N04PDG-E1B-AY is sourced from the original manufacturer or authorized distributors?
All NP80N04PDG-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04PDG-E1B-AY meets industry standards.
7.What is the process for return or replacement of NP80N04PDG-E1B-AY?
All NP80N04PDG-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04PDG-E1B-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP80N04PDG-E1B-AY part is unused and in its original packaging.
Return procedure for NP80N04PDG-E1B-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NP80N04PDG-E1B-AY Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
