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Renesas NP80N04PLG-E1B-AY
- Part No.:
- NP80N04PLG-E1B-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP80N04PLG-E1B-AY.pdf
- Description:
- MOSFET N-CH 40V 80A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:9,631
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Product details
Overview
NP80N04PLG-E1B-AY from Renesas Electronics is an N-channel power MOSFET in TO-263 (D²PAK) package, rated for 40 V VDSS, ±80 A DC drain current, and 4.5 mΩ max RDS(on) at VGS = 10 V / ID = 40 A. It features logic-level gate drive (VGS(th) = 1.4–2.5 V), built-in gate protection diode, and AEC-Q101 qualification for automotive switching applications including motor control and DC-DC converters.
For engineers reviewing the NP80N04PLG-E1B-AY datasheet, NP80N04PLG-E1B-AY pinout, NP80N04PLG-E1B-AY application, or NP80N04PLG-E1B-AY equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 115 W TC power dissipation, TO-263 thermal performance (Rth(ch-C) = 1.30 °C/W), and avalanche energy rating (EAR = 137 mJ).
Technical Context
This device uses a planar trench-gate structure optimized for high-current, low-voltage switching with fast turn-on (td(on) = 17–37 ns) and controlled turn-off (td(off) = 74–148 ns). Its gate charge profile (QG = 90–135 nC, QGD = 26 nC) supports efficient PWM operation in synchronous rectification and H-bridge topologies.
The integrated body diode exhibits VF(S-D) = 0.95–1.5 V at IF = 80 A and trr = 39 ns under specified di/dt conditions, enabling reliable freewheeling in inductive loads without external Schottky supplementation in many automotive-grade designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems and 36 V industrial rails. |
| RDS(on) max | 4.5 mΩ @ VGS = 10 V, ID = 40 A - Enables <1.8 W conduction loss at 80 A, critical for high-efficiency motor drivers. |
| ID(DC) | ±80 A - Supports high-power load switching without parallel devices in compact PCB layouts. |
| QG | 90–135 nC - Determines gate driver power requirement; enables use with standard 1–2 A peak gate drivers. |
| Rth(ch-C) | 1.30 °C/W - Allows direct heatsink mounting to sustain 115 W power dissipation at TC = 25°C. |
| Avalanche Energy | 137 mJ @ Tch ≤ 150°C - Provides robustness against inductive switching transients in motor and solenoid control. |
| VGS(th) | 1.4–2.5 V - Ensures full enhancement with 3.3 V or 5 V logic-level microcontrollers without level-shifting. |
Pinout & Package
NP80N04PLG-E1B-AY is housed in a surface-mount TO-263 (MP-25ZP) package with exposed drain pad for thermal and electrical performance. The package measures 15.25 × 10.0 mm with 2.54 mm lead pitch and Pb-free pure Sn plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts logic-level input; requires external gate resistor (RG = 25 Ω typical) to damp ringing and limit peak current during switching. |
| 2 (Drain) | Main current path (high-side) | Connected to large copper pour or heatsink via exposed metal tab; carries full load current and dissipates heat directly to PCB or heatsink. |
| 3 (Source) | Reference node / return path | Serves as power ground reference for gate drive; must be low-inductance connection to minimize shoot-through risk in half-bridge configurations. |
| 4 (Fin / Drain Tab) | Thermal & electrical drain extension | Electrically tied to Pin 2; provides primary thermal path to PCB copper; requires solder mask opening and thermal vias for optimal cooling. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.4–2.5 V ensures compatibility with 3.3 V/5 V MCUs and ASICs without gate driver ICs. |
| Built-in gate protection diode | ESD-rated diode between gate and source prevents damage from human-body-model (HBM) events up to ±2 kV (per JEDEC JESD22-A114). |
| Low Ciss | 4600 pF typ. reduces gate drive power and improves switching efficiency in high-frequency (>100 kHz) SMPS designs. |
| AEC-Q101 qualified | Validated for automotive underhood environments per stress test requirements including HTGB, TC, and UHAST. |
| Repetitive avalanche capability | Rated for 37 A IAR and 137 mJ EAR, enabling reliable operation in unclamped inductive switching without snubbers. |
Applications
| Motor Control | DC-DC Converter |
|---|---|
Use Scenario: High-current BLDC motor phase leg in 12 V/24 V automotive HVAC or power seat modules. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter topology, handling continuous 60–80 A peak currents with PWM frequencies up to 20 kHz. Use Value: 4.5 mΩ RDS(on) minimizes I²R losses during high-duty-cycle operation, reducing heatsink size by >30% versus 6 mΩ alternatives. | Use Scenario: Synchronous rectifier in 40 V input, 5–12 V output buck converter for ADAS camera power supply. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light-to-full load across -40°C to +125°C ambient. Use Value: Logic-level VGS(th) allows direct drive from controller's gate output, eliminating auxiliary bias circuitry and saving board space. |
| Automotive Lighting | Industrial Power Switching |
Use Scenario: LED headlamp matrix driver with individual channel current regulation up to 7 A per string. IC Role / Device Role / Timing Role: High-side switch controlling current flow into LED strings; operated in linear mode for analog dimming or PWM for digital dimming. Use Value: 80 A rating and 175°C Tch enable safe derating for transient overloads (e.g., cold-crank surges), extending system lifetime beyond 10,000 hours. | Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module for 24 V DC loads. IC Role / Device Role / Timing Role: Main power switch isolating field-side loads; driven by optocoupled gate signal with fast turn-off (<150 ns) to meet SIL-2 response time requirements. Use Value: 137 mJ avalanche energy rating eliminates need for external clamping components in inductive load switching, reducing BOM count and failure points. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | 40 V, 220 A, RDS(on) = 1.8 mΩ @ 10 V; DFN8 5×6 mm package; no integrated gate protection diode. | Higher current density but requires external ESD protection and more complex thermal layout due to smaller footprint. | Preferred for space-constrained, high-efficiency DC-DC where gate drive is isolated and PCB layout permits fine-pitch routing. |
| IRF1404ZLPbF | 40 V, 180 A, RDS(on) = 3.8 mΩ @ 10 V; TO-220 package; not AEC-Q101 qualified; higher Rth(ch-C) = 1.5 °C/W. | Lacks automotive qualification and has lower thermal efficiency; suitable only for industrial non-automotive use. | Select only for cost-sensitive industrial applications where AEC-Q101 compliance and maximum thermal performance are not required. |
Compared with STL220N4LF6AG and IRF1404ZLPbF, NP80N04PLG-E1B-AY offers balanced trade-offs: AEC-Q101 qualification and gate protection for automotive reliability, TO-263 thermal performance superior to TO-220, and RDS(on) low enough for 80 A operation without paralleling-making it optimal for production-grade automotive power stages.
Availability
NP80N04PLG-E1B-AY is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC conversion, solid-state relay replacement, and LED lighting systems requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for NP80N04PLG-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions.
NP80N04PLG-E1B-AY belongs to Renesas' automotive-qualified power MOSFET family designed specifically for high-reliability, high-current switching in engine control units, body electronics, and ADAS power subsystems.
FAQ
What is the maximum continuous drain current rating for NP80N04PLG-E1B-AY?
The NP80N04PLG-E1B-AY is rated for ±80 A DC drain current at TC = 25°C. Derating applies above 25°C case temperature per the datasheet's total power dissipation curve; at TC = 100°C, usable current drops to approximately ±45 A to maintain safe channel temperature limits.
Is NP80N04PLG-E1B-AY qualified for automotive applications?
Yes, NP80N04PLG-E1B-AY is AEC-Q101 qualified and explicitly designed for automotive applications. Its qualification covers temperature cycling, high-temperature gate bias, and unclamped inductive switching tests required for under-hood and chassis-mounted power systems.
What package type does NP80N04PLG-E1B-AY use, and how is thermal performance achieved?
NP80N04PLG-E1B-AY uses the TO-263 (MP-25ZP) surface-mount package with an exposed drain tab. Thermal performance relies on direct soldering of the tab to a large PCB copper area with thermal vias; its Rth(ch-C) = 1.30 °C/W enables 115 W dissipation at TC = 25°C when properly mounted.
Does NP80N04PLG-E1B-AY include internal gate protection?
Yes, NP80N04PLG-E1B-AY integrates a gate-to-source protection diode to suppress ESD events. However, the datasheet cautions that external gate protection remains necessary if voltages exceeding ±20 V are expected-such as from inductive kickback or poor layout coupling.
What is the typical gate charge (QG) of NP80N04PLG-E1B-AY, and why does it matter?
NP80N04PLG-E1B-AY has a total gate charge QG of 90–135 nC at VDD = 32 V. This value determines the energy required to switch the device and directly impacts gate driver sizing, switching losses, and achievable PWM frequency-critical for optimizing efficiency in motor drives and SMPS.
NP80N04PLG-E1B-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 115W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
NP80N04PLG-E1B-AY FAQ
1.How can I place an order for NP80N04PLG-E1B-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP80N04PLG-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP80N04PLG-E1B-AY reliable?
The price and inventory of NP80N04PLG-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04PLG-E1B-AY is usually 5 days.
3.What payment methods are accepted for NP80N04PLG-E1B-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04PLG-E1B-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP80N04PLG-E1B-AY?
NP80N04PLG-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP80N04PLG-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP80N04PLG-E1B-AY?
For technical support, including NP80N04PLG-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04PLG-E1B-AY requirements.
6.How does Aetrix verify that NP80N04PLG-E1B-AY is sourced from the original manufacturer or authorized distributors?
All NP80N04PLG-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04PLG-E1B-AY meets industry standards.
7.What is the process for return or replacement of NP80N04PLG-E1B-AY?
All NP80N04PLG-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04PLG-E1B-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP80N04PLG-E1B-AY part is unused and in its original packaging.
Return procedure for NP80N04PLG-E1B-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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