Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N04PUG-E1B-AY

Name: NP80N04PUG-E1B-AY
Brand: Renesas
SKU: NP80N04PUG-E1B-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NP80N04PUG-E1B-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP80N04PUG-E1B-AY.pdf

Description:: MOSFET N-CH 40V 80A TO263

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,385

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NP80N04PUG-E1B-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in automotive and industrial power conversion systems, featuring R_DS(on) = 4.5 mΩ max at V_GS = 10 V and I_D = 40 A, ±80 A DC drain current rating, and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the NP80N04PUG-E1B-AY datasheet, NP80N04PUG-E1B-AY pinout, NP80N04PUG-E1B-AY application, or NP80N04PUG-E1B-AY equivalent, this page delivers verified electrical parameters, TO-263 package layout, thermal performance data, body diode recovery characteristics, and validated alternative parts for high-efficiency 40 V power stage design.

Technical Context

This device operates as a unidirectional high-side or low-side switch in synchronous rectification, motor drive H-bridges, and DC-DC converter output stages. Its 40 V V_DSS, ±20 V V_GSS, and 175 °C channel temperature rating support robust operation in thermally constrained environments.

The MOSFET exhibits non logic-level gate drive behavior (V_GS(th) = 2.0–4.0 V), requires ≥10 V gate bias for full conduction, and delivers fast switching with t_d(on) = 32–70 ns and Q_G = 90–135 nC - enabling efficient operation at frequencies up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; defines use in ≤40 V bus systems like 12 V/24 V automotive and industrial supplies.
R_DS(on) max	4.5 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1.8 W conduction loss at 80 A, critical for high-efficiency power stages.
I_D(DC)	±80 A - Continuous drain current rating at T_C = 25 °C; supports high-power load switching without forced air cooling.
Q_G	90–135 nC - Total gate charge determines driver strength requirement; dictates gate resistor selection for controlled dV/dt and EMI management.
C_iss	4900 pF typ. - Input capacitance impacts gate drive loop stability and turn-on energy; informs snubber and driver IC selection.
T_ch max	175 °C - Maximum channel temperature enables operation in under-hood environments with minimal derating.
V_F(S-D)	0.92–1.5 V at I_F = 80 A - Body diode forward voltage affects reverse recovery losses in freewheeling paths.

Pinout & Package

NP80N04PUG-E1B-AY is housed in a surface-mount TO-263 (MP-25ZP) package with 4 terminals: Gate, Drain, Source, and exposed Drain Fin (thermal pad). The package weighs ~1.5 g and features pure Sn (lead-free) plating.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires ≥10 V for full enhancement; sensitive to ESD (gate oxide protection required).
2 (Drain)	Main current output terminal	Connected to high-side of load or bus; electrically tied to exposed fin for thermal conduction to PCB copper.
3 (Source)	Main current return path	Reference node for gate drive; must be routed with low inductance to minimize switching oscillation.
4 (Fin / Drain)	Thermal & electrical connection	Exposed metal pad soldered to large PCB copper area; primary heat dissipation path (R_th(ch–C) = 1.30 °C/W).

Key Features

Feature	Design Value
Super low R_DS(on)	4.5 mΩ max enables <1.8 W conduction loss at 80 A, reducing heatsink size and system cost in high-current 40 V applications.
AEC-Q101 qualified	Validated for automotive under-hood use including engine control modules, battery disconnect units, and EPS motor drivers.
High repetitive avalanche rating	I_AR = 37 A / E_AR = 137 mJ allows safe operation during inductive load switching transients without external clamping.
Low C_iss & Q_G	4900 pF C_iss and 90–135 nC Q_G reduce gate drive power and enable efficient high-frequency PWM control.
Robust body diode	V_F(S-D) = 0.92 V typ. and t_rr = 40 ns support reliable freewheeling in synchronous buck and half-bridge converters.

Applications

Automotive Battery Disconnect Switch	Industrial DC Motor Drive Half-Bridge
Use Scenario: High-reliability isolation of 12 V/24 V vehicle battery from downstream loads during fault conditions or key-off state. IC Role / Device Role / Timing Role: Power MOSFET used as main high-side switch in solid-state relay configuration, controlled by microcontroller GPIO via gate driver. Use Value: 4.5 mΩ R_DS(on) minimizes voltage drop and self-heating during continuous 80 A load currents; AEC-Q101 qualification ensures long-term reliability in vibration-prone environments.	Use Scenario: Bidirectional speed/torque control of brushed DC motors in factory automation equipment operating from 24–48 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in complementary half-bridge topology; paired with upper N-channel MOSFET for PWM-controlled motor winding current. Use Value: Fast 23–58 ns rise time and 11–28 ns fall time enable precise PWM duty cycle control up to 100 kHz; low Q_G reduces gate driver power consumption.
Server PSU Synchronous Rectifier	EV Onboard Charger DC-DC Stage
Use Scenario: Secondary-side synchronous rectification in isolated 48 V output DC-DC converters for datacenter power supplies. IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode in LLC resonant converter secondary, driven by transformer-coupled gate signal. Use Value: 0.92 V body diode forward voltage and 40 ns reverse recovery time minimize conduction and switching losses during zero-voltage switching transitions.	Use Scenario: High-efficiency 400 V to 12 V DC-DC conversion stage in electric vehicle onboard chargers supplying auxiliary power. IC Role / Device Role / Timing Role: Primary-side switch in active clamp flyback or forward converter, handling high peak currents during charging cycles. Use Value: ±300 A pulsed drain current rating and 115 W total power dissipation (T_C = 25 °C) support burst-mode operation under transient load demands.

Automotive Battery Disconnect Switch

Industrial DC Motor Drive Half-Bridge

Use Scenario: High-reliability isolation of 12 V/24 V vehicle battery from downstream loads during fault conditions or key-off state.

IC Role / Device Role / Timing Role: Power MOSFET used as main high-side switch in solid-state relay configuration, controlled by microcontroller GPIO via gate driver.

Use Value: 4.5 mΩ R_DS(on) minimizes voltage drop and self-heating during continuous 80 A load currents; AEC-Q101 qualification ensures long-term reliability in vibration-prone environments.

Use Scenario: Bidirectional speed/torque control of brushed DC motors in factory automation equipment operating from 24–48 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in complementary half-bridge topology; paired with upper N-channel MOSFET for PWM-controlled motor winding current.

Use Value: Fast 23–58 ns rise time and 11–28 ns fall time enable precise PWM duty cycle control up to 100 kHz; low Q_G reduces gate driver power consumption.

Server PSU Synchronous Rectifier

EV Onboard Charger DC-DC Stage

Use Scenario: Secondary-side synchronous rectification in isolated 48 V output DC-DC converters for datacenter power supplies.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode in LLC resonant converter secondary, driven by transformer-coupled gate signal.

Use Value: 0.92 V body diode forward voltage and 40 ns reverse recovery time minimize conduction and switching losses during zero-voltage switching transitions.

Use Scenario: High-efficiency 400 V to 12 V DC-DC conversion stage in electric vehicle onboard chargers supplying auxiliary power.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp flyback or forward converter, handling high peak currents during charging cycles.

Use Value: ±300 A pulsed drain current rating and 115 W total power dissipation (T_C = 25 °C) support burst-mode operation under transient load demands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N4LH5AG	R_DS(on) = 3.2 mΩ @ 10 V, TO-263, same V_DSS and I_D; lower Q_G (75 nC) but higher C_iss (6200 pF).	Better conduction efficiency at light loads; slightly slower switching due to higher input capacitance.	Select when minimizing conduction loss dominates over switching loss in <50 kHz applications.
IXTP80N04T	R_DS(on) = 4.8 mΩ @ 10 V, TO-220AB package, same V_DSS/I_D; lacks AEC-Q101 qualification and has higher R_th(ch–A) (62 °C/W).	Suitable for industrial but not automotive use; requires larger heatsink due to through-hole thermal resistance.	Select for cost-sensitive non-automotive designs where surface-mount assembly is not required.

Compared with STL110N4LH5AG and IXTP80N04T, NP80N04PUG-E1B-AY offers the optimal balance of ultra-low R_DS(on), AEC-Q101 compliance, and TO-263 thermal performance - making it preferred for space-constrained, high-reliability 40 V automotive power stages where both efficiency and qualification matter.

Availability

NP80N04PUG-E1B-AY is available at Aetrix Electronics and suitable for automotive battery management, industrial motor drives, server power supplies, and EV auxiliary DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for NP80N04PUG-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

NP80N04PUG-E1B-AY belongs to Renesas' high-current N-channel power MOSFET product line, engineered specifically for AEC-Q101-compliant 40 V switching applications demanding low on-resistance, robust avalanche capability, and thermally optimized surface-mount packaging.

FAQ

What is the gate threshold voltage range for NP80N04PUG-E1B-AY?

The gate-to-source threshold voltage (V_GS(th)) for NP80N04PUG-E1B-AY is specified as 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This non logic-level characteristic means the device requires ≥10 V gate drive to achieve its rated R_DS(on) of 4.5 mΩ. Operating below 10 V results in significantly higher on-resistance and increased conduction loss. Always verify gate drive voltage margin in your NP80N04PUG-E1B-AY application.

Is NP80N04PUG-E1B-AY suitable for automotive applications?

Yes, NP80N04PUG-E1B-AY is AEC-Q101 qualified and explicitly designed for automotive applications including battery disconnect switches, motor control modules, and DC-DC converters. Its 175 °C channel temperature rating, robust avalanche capability (I_AR = 37 A), and lead-free TO-263 packaging meet stringent automotive reliability and environmental requirements. Confirm mechanical mounting and thermal interface design per Renesas' recommended PCB land pattern for NP80N04PUG-E1B-AY.

What is the maximum continuous drain current for NP80N04PUG-E1B-AY?

The maximum continuous drain current (I_D(DC)) for NP80N04PUG-E1B-AY is ±80 A at case temperature T_C = 25 °C. This rating assumes proper PCB thermal management via the exposed drain fin. At elevated case temperatures, current must be derated per the datasheet's derating curve - e.g., ~50 A at T_C = 100 °C. Always calculate actual junction temperature using R_th(ch–C) = 1.30 °C/W when designing with NP80N04PUG-E1B-AY.

Does NP80N04PUG-E1B-AY have a built-in body diode?

Yes, NP80N04PUG-E1B-AY integrates a parasitic body diode between source and drain, with forward voltage V_F(S-D) = 0.92–1.5 V at I_F = 80 A and reverse recovery time t_rr = 40 ns. This diode enables freewheeling current paths in inductive switching applications such as motor drives and buck converters. Its performance is characterized and usable in synchronous rectification, though external Schottky diodes may be added for enhanced recovery in high-dV/dt environments involving NP80N04PUG-E1B-AY.

What is the thermal resistance from channel to case for NP80N04PUG-E1B-AY?

The channel-to-case thermal resistance (R_th(ch–C)) for NP80N04PUG-E1B-AY is 1.30 °C/W, measured under standard test conditions. This low value reflects the efficiency of heat transfer from the silicon die to the exposed drain fin in the TO-263 package. To achieve rated power dissipation (115 W at T_C = 25 °C), the PCB must provide adequate copper area and thermal vias beneath the fin. Thermal design must account for this R_th(ch–C) when calculating junction temperature in your NP80N04PUG-E1B-AY implementation.

NP80N04PUG-E1B-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 115W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

NP80N04PUG-E1B-AY FAQ

1.How can I place an order for NP80N04PUG-E1B-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N04PUG-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N04PUG-E1B-AY reliable?

The price and inventory of NP80N04PUG-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04PUG-E1B-AY is usually 5 days.

3.What payment methods are accepted for NP80N04PUG-E1B-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04PUG-E1B-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N04PUG-E1B-AY?

NP80N04PUG-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N04PUG-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N04PUG-E1B-AY?

For technical support, including NP80N04PUG-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04PUG-E1B-AY requirements.

6.How does Aetrix verify that NP80N04PUG-E1B-AY is sourced from the original manufacturer or authorized distributors?

All NP80N04PUG-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04PUG-E1B-AY meets industry standards.

7.What is the process for return or replacement of NP80N04PUG-E1B-AY?

All NP80N04PUG-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04PUG-E1B-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N04PUG-E1B-AY part is unused and in its original packaging.

Return procedure for NP80N04PUG-E1B-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…