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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N055KLE-E1-AY

Name: NP80N055KLE-E1-AY
Brand: Renesas
SKU: NP80N055KLE-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N055KLE-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP80N055KLE-E1-AY.pdf

Description:: NP80N055KLE-E1-AY - SWITCHINGN-C

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Product details

Overview

NP80N055KLE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies, motor drives, and DC-DC converters. It delivers 80 A continuous drain current at TC = 25°C, features a maximum R_DS(on) of 11 mΩ at V_GS = 10 V and ID = 40 A, and supports 55 V drain-source voltage with built-in gate protection diode.

For engineers reviewing the NP80N055KLE-E1-AY datasheet, NP80N055KLE-E1-AY pinout, NP80N055KLE-E1-AY application, or NP80N055KLE-E1-AY equivalent, key selection criteria include its TO-263 (MP-25ZK) package thermal performance (R_th(ch-C) = 1.25°C/W), avalanche energy rating (E_AS = 2.0–100 mJ), and low-input capacitance (C_iss = 2900 pF typ.) for fast switching in hard-switched topologies.

Technical Context

This device operates as a unidirectional high-side or low-side switch in DC power conversion stages. Its gate threshold voltage range (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its dual R_DS(on) specs-11 mΩ @ 10 V and 13 mΩ @ 5 V-support both standard and logic-level gate drive configurations.

The integrated gate protection diode guards against ESD events, and the device's rated channel temperature of 175°C ensures robust operation under sustained thermal stress. Its single-pulse avalanche capability (I_AS = 45 A @ T_ch = 25°C) provides inherent ruggedness for inductive load switching without external snubbers in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Supports 48 V nominal bus systems with 15% margin for transients.
I_D(DC)	±80 A at T_C = 25°C - Enables high-power output stages without parallel devices in compact designs.
R_DS(on)1	11 mΩ max @ V_GS = 10 V, I_D = 40 A - Minimizes conduction loss (P_cond ≈ 17.6 W at 40 A) in high-efficiency SMPS.
R_DS(on)2	13 mΩ max @ V_GS = 5 V, I_D = 40 A - Allows direct interface with microcontroller GPIOs or logic-level drivers.
C_iss	2900 pF typ. - Reduces gate drive power requirement and enables >100 kHz switching with moderate gate drivers.
E_AS	2.0–100 mJ - Withstands single-pulse inductive energy spikes up to 100 mJ without failure, easing layout constraints.
R_th(ch-C)	1.25°C/W - Enables 96 W power dissipation at ΔT = 120°C (175°C – 55°C ambient), supporting high-density thermal design.

Pinout & Package

NP80N055KLE-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with 4 terminals and a thermally enhanced exposed drain pad. The package weighs approximately 1.5 g and features pure Sn (tin) lead plating for Pb-free compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≤20 V absolute max; protected by internal Zener diode.
2 (Drain)	Main current path (high-side)	Connected to high-voltage rail; electrically tied to exposed metal tab for thermal and electrical conduction.
3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; ties to PCB ground plane for low-inductance return.
4 (Fin/Drain)	Thermal & electrical extension of Drain	Exposed copper pad on underside; must be soldered to large copper pour for optimal heat transfer and current capacity.

Key Features

Feature	Design Value
175°C channel temperature rating	Enables operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating below full current.
Super low R_DS(on) at 5 V gate drive	13 mΩ max allows efficient switching using 5 V microcontrollers or gate drivers without level-shifting circuitry.
Built-in gate protection diode	Clamps ESD transients to ±20 V, reducing need for external TVS on gate traces in cost-sensitive designs.
Low C_iss and C_rss	2900 pF C_iss and 170 pF C_rss minimize Miller effect, enabling stable high-speed switching with reduced risk of shoot-through.
Single-pulse avalanche ruggedness	Rated for 45 A/2.0 mJ (low-energy) to 10 A/100 mJ (high-energy) avalanche events-supports reliable inductive load commutation.

Applications

Motor Drive Inverter Stage	Industrial DC-DC Converter Primary Switch
Use Scenario: High-current half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 200 A pulse, synchronized with complementary high-side FET. Use Value: 11 mΩ R_DS(on) minimizes I²R losses during 10–20 kHz PWM, improving thermal margin and efficiency over competing 15+ mΩ parts.	Use Scenario: Primary-side synchronous rectifier or main switch in isolated 400 W telecom DC-DC modules. IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology operating at 200–300 kHz. Use Value: 2900 pF C_iss and 170 pF C_rss reduce gate drive losses and improve ZVS behavior, enabling higher frequency without efficiency penalty.
Uninterruptible Power Supply (UPS) Output Stage	High-Current Battery Protection Circuit
Use Scenario: Bidirectional power path control in online UPS systems with 48 V battery backup and 230 V AC output via inverter. IC Role / Device Role / Timing Role: High-current, low-loss switching element in H-bridge inverter stage delivering up to 3 kVA output. Use Value: 175°C channel rating and 1.25°C/W R_th(ch-C) allow sustained 80 A conduction with minimal heatsink volume-critical for compact rack-mounted UPS units.	Use Scenario: Solid-state main disconnect switch in 48 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: Fast-acting overcurrent cutoff device triggered by protection IC, interrupting >500 A fault current within microseconds. Use Value: Single-pulse avalanche rating (100 mJ at 10 A) absorbs energy from short-circuit events before fuse activation, preventing catastrophic failure during fault clearing.

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 200 A pulse, synchronized with complementary high-side FET.

Use Value: 11 mΩ R_DS(on) minimizes I²R losses during 10–20 kHz PWM, improving thermal margin and efficiency over competing 15+ mΩ parts.

Use Scenario: Primary-side synchronous rectifier or main switch in isolated 400 W telecom DC-DC modules.

IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology operating at 200–300 kHz.

Use Value: 2900 pF C_iss and 170 pF C_rss reduce gate drive losses and improve ZVS behavior, enabling higher frequency without efficiency penalty.

Uninterruptible Power Supply (UPS) Output Stage

High-Current Battery Protection Circuit

Use Scenario: Bidirectional power path control in online UPS systems with 48 V battery backup and 230 V AC output via inverter.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in H-bridge inverter stage delivering up to 3 kVA output.

Use Value: 175°C channel rating and 1.25°C/W R_th(ch-C) allow sustained 80 A conduction with minimal heatsink volume-critical for compact rack-mounted UPS units.

Use Scenario: Solid-state main disconnect switch in 48 V lithium-ion battery packs for material handling equipment.

IC Role / Device Role / Timing Role: Fast-acting overcurrent cutoff device triggered by protection IC, interrupting >500 A fault current within microseconds.

Use Value: Single-pulse avalanche rating (100 mJ at 10 A) absorbs energy from short-circuit events before fuse activation, preventing catastrophic failure during fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	TO-220 package, R_DS(on) = 8.5 mΩ @ 10 V, no integrated gate protection diode	Requires external gate clamping; better suited for through-hole prototyping or lower-cost manual assembly	Choose when board space permits TO-220 and gate drive circuit already includes protection.
IRF1405PBF	TO-220, R_DS(on) = 5.3 mΩ @ 10 V, higher C_iss (3600 pF), 175°C rated	Higher conduction efficiency but slower switching due to larger input capacitance	Prefer for ultra-low-loss linear-regulator replacement or low-frequency (<50 kHz) high-current applications.

Compared with STP80NF55-08 and IRF1405PBF, NP80N055KLE-E1-AY offers superior thermal performance in surface-mount form factor (R_th(ch-C) = 1.25°C/W vs. ~2.5°C/W for TO-220), integrated gate protection, and optimized C_iss/C_rss ratio for high-frequency hard-switching-making it ideal for space-constrained, high-reliability industrial power stages.

Availability

NP80N055KLE-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for NP80N055KLE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

NP80N055KLE-E1-AY belongs to Renesas' legacy high-current N-channel power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion where thermal reliability and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for NP80N055KLE-E1-AY?

The NP80N055KLE-E1-AY is rated for ±80 A continuous drain current at case temperature (T_C) = 25°C. This rating is calculated based on the maximum allowable channel temperature of 175°C and assumes proper PCB thermal management via the exposed drain pad. At elevated case temperatures, current must be derated per the datasheet's derating curve-e.g., ~50 A at T_C = 100°C.

Does NP80N055KLE-E1-AY have built-in gate protection?

Yes, NP80N055KLE-E1-AY integrates a gate-to-source protection diode to suppress ESD events and transient overvoltage. This diode clamps gate voltage to ±20 V, aligning with the device's absolute maximum V_GSS rating. However, external gate resistors and layout best practices remain essential for robust operation in noisy industrial environments.

What is the thermal resistance from channel to case for NP80N055KLE-E1-AY?

The channel-to-case thermal resistance (R_th(ch-C)) of NP80N055KLE-E1-AY is 1.25°C/W. This value reflects the thermal path from the silicon die to the exposed drain pad in the TO-263 (MP-25ZK) package. Achieving this performance requires full-solder coverage of the drain pad to a minimum 10 cm² copper area with ≥2 oz thickness and thermal vias.

Can NP80N055KLE-E1-AY be driven directly by a 3.3 V microcontroller?

No-NP80N055KLE-E1-AY has a gate threshold voltage (V_GS(th)) range of 1.5–2.5 V, but its R_DS(on) is not guaranteed at 3.3 V. At V_GS = 4.5 V, R_DS(on) is specified at 15 mΩ max; at 3.3 V, conduction loss increases significantly and is not characterized. A dedicated gate driver or level shifter is required for reliable 3.3 V logic interfacing.

Is NP80N055KLE-E1-AY suitable for avalanche-prone circuits like inductive load switching?

Yes, NP80N055KLE-E1-AY is explicitly rated for single-pulse avalanche operation, with E_AS ranging from 2.0 mJ (45 A) to 100 mJ (10 A) depending on starting channel temperature and test conditions. Its ruggedness supports reliable commutation in relay drivers, solenoid controls, and motor phase-leg switching without external snubbers-provided energy per event stays within datasheet limits.

NP80N055KLE-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 120W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP80N055KLE-E1-AY FAQ

1.How can I place an order for NP80N055KLE-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N055KLE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N055KLE-E1-AY reliable?

The price and inventory of NP80N055KLE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N055KLE-E1-AY is usually 5 days.

3.What payment methods are accepted for NP80N055KLE-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N055KLE-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N055KLE-E1-AY?

NP80N055KLE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N055KLE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N055KLE-E1-AY?

For technical support, including NP80N055KLE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N055KLE-E1-AY requirements.

6.How does Aetrix verify that NP80N055KLE-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP80N055KLE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N055KLE-E1-AY meets industry standards.

7.What is the process for return or replacement of NP80N055KLE-E1-AY?

All NP80N055KLE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N055KLE-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N055KLE-E1-AY part is unused and in its original packaging.

Return procedure for NP80N055KLE-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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