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Renesas NP80N055MHE-S18-AY
- Part No.:
- NP80N055MHE-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
NP80N055MHE-S18-AY.pdf
- Description:
- NP80N055MHE-S18-AY - SWITCHINGN-
- Quantity:
- Payment:
- Shipping:
Inventory:2,400
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Product details
Overview
NP80N055MHE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits, featuring RDS(on) = 11 mΩ max at VGS = 10 V and ID = 40 A, 55 V VDSS, and 80 A continuous drain current rating at TC = 25°C.
For engineers reviewing the NP80N055MHE-S18-AY datasheet, NP80N055MHE-S18-AY pinout, NP80N055MHE-S18-AY application, or NP80N055MHE-S18-AY equivalent, this device serves as a robust, TO-220 packaged switch for 48 V bus systems, battery protection circuits, and DC-DC converter primary-side switching where low conduction loss and avalanche ruggedness are required.
Technical Context
This MOSFET employs a planar silicon process optimized for low RDS(on) and fast switching with integrated gate protection diode. Its channel temperature rating of 175°C enables operation in thermally constrained environments without derating below 120 W total power dissipation at case temperature.
The device exhibits Ciss = 2400 pF typ. and QG = 40–60 nC, supporting efficient gate drive in hard-switched topologies. Avalanche energy rating of 96 mJ (at IAS = 31 A) confirms capability for unclamped inductive switching in relay drivers and solenoid controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage for 48 V nominal systems with 20% transient margin. |
| RDS(on) max | 11 mΩ at VGS = 10 V, ID = 40 A - Enables ≤0.44 W conduction loss at 20 A, reducing heatsink requirements. |
| ID(DC) | ±80 A at TC = 25°C - Supports high-current load switching without parallel devices in TO-220 package. |
| EAS | 96 mJ at IAS = 31 A - Withstands single-pulse inductive energy in motor commutation or relay snubbing. |
| Tch max | 175°C - Allows sustained operation in sealed enclosures or ambient temperatures up to 100°C with proper thermal design. |
| Ciss | 2400 pF typ. - Low input capacitance reduces gate drive power and improves switching speed in PWM controllers. |
| QG | 40–60 nC - Enables fast turn-on with standard 1 A gate drivers, minimizing switching losses in 100 kHz converters. |
Pinout & Package
NP80N055MHE-S18-AY uses the TO-220 (MP-25K) package with 3 leads and integral metal tab (Drain-connected fin). Mounting requires electrically isolated heatsinking due to Drain-to-tab continuity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Left) | Gate | High-impedance control terminal; requires < ±20 V gate-source voltage and external ESD protection per datasheet recommendation. |
| Lead 2 (Center) | Drain | Main high-side current path; internally connected to metal tab - must be electrically isolated from heatsink unless system ground reference permits. |
| Lead 3 (Right) | Source | Power return node; forms common reference for gate drive and current sensing; body diode anode. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 11 mΩ max enables <0.5 W conduction loss at 20 A, reducing thermal stress in compact power modules. |
| Built-in gate protection diode | Integrated Zener between Gate and Source limits VGS to ±20 V, preventing gate oxide rupture during layout transients. |
| Avalanche-rated operation | 96 mJ single-pulse EAS supports reliable unclamped inductive switching in motor H-bridge freewheel paths. |
| 175°C channel temperature rating | Permits full 80 A current capability at elevated ambient temperatures when mounted on ≥10 cm² copper area. |
| Pb-free lead plating | Pure Sn (Tin) finish meets RoHS Directive 2011/65/EU and supports lead-free reflow soldering per IR60-00-3 profile. |
Applications
| Industrial DC Power Supply | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Primary-side synchronous rectification in 48 V input, 12 V output isolated DC-DC converters for factory automation PLCs. IC Role / Device Role / Timing Role: High-side main switch in forward or half-bridge topology, operating at 100–200 kHz with hard switching. Use Value: 11 mΩ RDS(on) cuts conduction loss by >35% vs. legacy 20 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 25 A load. |
Use Scenario: H-bridge upper-arm switch controlling 24 V, 30 A brushed motors in automated conveyor systems. IC Role / Device Role / Timing Role: High-current bidirectional switching element with body diode conducting reverse recovery during PWM freewheeling. Use Value: 96 mJ EAS withstands repeated inductive kickback without snubber, eliminating 2× external TVS diodes per bridge leg. |
| Battery Protection Circuit | AC-DC Adapter Secondary Switch |
|
Use Scenario: Overcurrent and short-circuit protection switch in 48 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: Solid-state disconnect switch placed between battery stack and load, controlled by protection IC. Use Value: 80 A DC rating allows single-device implementation for 2 kW peak loads, avoiding paralleling complexity and mismatch risk. |
Use Scenario: Synchronous rectifier in 19 V, 6.3 A laptop AC-DC adapters using active clamp flyback architecture. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: VF(S-D) = 1.0 V at 80 A enables 0.3 V lower forward drop than 45 V Schottky, reducing secondary-side loss by 1.8 W at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | RDS(on) = 8.5 mΩ max, TO-220, same VDSS/ID ratings but higher Ciss (3200 pF) and QG (105 nC). | Higher gate charge increases driver loss in high-frequency SMPS; better suited for <50 kHz applications. | Select when lowest possible RDS(on) is critical and switching frequency is ≤30 kHz. |
| IRF1404ZPBF | RDS(on) = 12.5 mΩ max, TO-220, identical avalanche rating (96 mJ), but 100% higher Qrr (180 nC vs. 90 nC). | Higher reverse recovery charge degrades efficiency in synchronous rectification with fast di/dt. | Select only for non-synchronous, low-dV/dt switching where body diode conduction is minimal. |
Compared with STP80NF55-08 and IRF1404ZPBF, NP80N055MHE-S18-AY offers optimal balance of low RDS(on), moderate QG, and low Qrr, making it preferred for 100–200 kHz DC-DC converters and motor drives requiring both efficiency and reliability.
Availability
NP80N055MHE-S18-AY is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and battery management systems requiring stable component supply across multi-year production cycles.
Supply support for NP80N055MHE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and automotive markets.
NP80N055MHE-S18-AY belongs to Renesas' legacy "NP" series of high-current N-channel MOSFETs, engineered for ruggedized industrial switching applications where thermal stability and avalanche tolerance are mandatory.
FAQ
What is the maximum continuous drain current rating for NP80N055MHE-S18-AY?
The NP80N055MHE-S18-AY has a maximum continuous drain current (ID(DC)) of ±80 A at case temperature TC = 25°C. This rating assumes adequate heatsinking and is derated linearly above 25°C per the Rth(ch-C) = 1.25°C/W thermal resistance specified in the datasheet. At TC = 100°C, the usable ID(DC) drops to approximately 52 A.
Does NP80N055MHE-S18-AY include integrated gate protection?
Yes, NP80N055MHE-S18-AY incorporates a built-in gate-to-source Zener diode that clamps VGS to ±20 V, protecting the gate oxide from ESD and transient overvoltage. However, Renesas explicitly states that an external protection circuit remains necessary if system-level voltages may exceed the rated ±20 V - the internal diode is not a substitute for robust board-level ESD design.
What is the avalanche energy rating of NP80N055MHE-S18-AY and under what conditions is it valid?
NP80N055MHE-S18-AY is rated for 96 mJ single-pulse avalanche energy (EAS) at IAS = 31 A, measured with starting channel temperature Tch = 25°C, VDD = 28 V, and gate resistor RG = 25 Ω. This rating applies only to single, non-repetitive events and does not imply repetitive avalanche capability. Operation beyond this limit risks permanent parametric shift or failure.
Can NP80N055MHE-S18-AY be used in synchronous rectification applications?
Yes, NP80N055MHE-S18-AY is suitable for synchronous rectification due to its low RDS(on) (11 mΩ max), low Qrr (90 nC), and fast body diode recovery (trr = 49 ns). Its VF(S-D) = 1.0 V at 80 A provides measurable improvement over Schottky diodes in 12–48 V output stages, especially when paired with precise gate timing to minimize shoot-through risk.
What is the thermal resistance from channel to case (Rth(ch-C)) for NP80N055MHE-S18-AY?
The channel-to-case thermal resistance Rth(ch-C) for NP80N055MHE-S18-AY is 1.25°C/W, measured under JEDEC JESD51-14 conditions. This value enables accurate junction temperature estimation when mounted on a heatsink: Tj = TC + (Ptot × 1.25). It reflects the intrinsic die-to-package thermal path and is independent of PCB copper area or mounting pressure.
NP80N055MHE-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 120W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- MP-25K
NP80N055MHE-S18-AY FAQ
1.How can I place an order for NP80N055MHE-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP80N055MHE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP80N055MHE-S18-AY reliable?
The price and inventory of NP80N055MHE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N055MHE-S18-AY is usually 5 days.
3.What payment methods are accepted for NP80N055MHE-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N055MHE-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP80N055MHE-S18-AY?
NP80N055MHE-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP80N055MHE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP80N055MHE-S18-AY?
For technical support, including NP80N055MHE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N055MHE-S18-AY requirements.
6.How does Aetrix verify that NP80N055MHE-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP80N055MHE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N055MHE-S18-AY meets industry standards.
7.What is the process for return or replacement of NP80N055MHE-S18-AY?
All NP80N055MHE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N055MHE-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP80N055MHE-S18-AY part is unused and in its original packaging.
Return procedure for NP80N055MHE-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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