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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N055PDG-E1B-AY

Name: NP80N055PDG-E1B-AY
Brand: Renesas
SKU: NP80N055PDG-E1B-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N055PDG-E1B-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP80N055PDG-E1B-AY.pdf

Description:: MOSFET N-CH 55V 80A TO263

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Inventory:5,000

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Product details

Overview

NP80N055PDG-E1B-AY from Renesas Electronics is an N-channel power MOSFET in TO-263 (MP-25ZP) package, rated for 55 V V_DSS, ±80 A DC drain current, and 6.6 mΩ R_DS(on) at V_GS = 10 V / I_D = 40 A. It features logic-level gate drive (V_GS(th) = 1.4–2.5 V), 4600 pF C_iss, and AEC-Q101 qualification for automotive switching applications such as DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the NP80N055PDG-E1B-AY datasheet, NP80N055PDG-E1B-AY pinout, NP80N055PDG-E1B-AY application, or NP80N055PDG-E1B-AY equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (10.9 mΩ max), 115 W T_C power dissipation, TO-263 thermal performance (R_th(ch-C) = 1.30 °C/W), and integrated body diode with 0.95–1.5 V forward voltage at 80 A.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.4–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 90–135 nC total gate charge supports efficient PWM operation up to several hundred kHz in hard-switched topologies.

The device integrates a robust body diode with 38 ns reverse recovery time and 45 nC Q_rr under 100 A/μs di/dt, enabling use in synchronous rectification and freewheeling paths without external Schottky supplementation in moderate-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with 20% transient margin.
R_DS(on) @ 10 V	4.8–6.6 mΩ - Enables <1 W conduction loss at 40 A, critical for high-efficiency 1 kW+ power stages.
R_DS(on) @ 4.5 V	5.9–10.9 mΩ - Ensures full enhancement with 3.3 V microcontrollers, eliminating level-shifter need.
I_D(DC)	±80 A - Supports high-current motor phases or battery protection FETs without parallel devices.
C_iss	4600–6900 pF - Low input capacitance reduces gate drive power and enables faster switching transitions.
Q_G	90–135 nC - Determines required gate driver peak current; ~1.35 A needed for 100 ns turn-on with 10 Ω gate resistor.
T_ch max	175 °C - Allows operation in under-hood automotive environments with proper heatsinking.

Pinout & Package

NP80N055PDG-E1B-AY uses the TO-263 (MP-25ZP) surface-mount package with exposed drain pad for enhanced thermal conduction. The 4-pin configuration includes isolated gate, high-current drain, source, and integral fin (drain-connected tab) for PCB copper area attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; requires ESD protection due to thin gate oxide.
2 (Drain)	High-side power node	Connected to load supply rail; electrically tied to exposed metal tab for thermal and current path integrity.
3 (Source)	Power return reference	Serves as common return for gate drive and load current; defines local ground for gate-source bias.
4 (Fin/Drain Tab)	Thermal & current interface	Large copper-exposed pad soldered to PCB thermal plane; carries full drain current and dissipates >90% of heat.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.4–2.5 V enables direct interfacing with 3.3 V/5 V MCUs without gate drivers.
Ultra-low R_DS(on)	6.6 mΩ max at 10 V allows <0.5 W conduction loss at 30 A, reducing heatsink requirements.
AEC-Q101 qualified	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock.
Robust body diode	38 ns t_rr and 45 nC Q_rr support efficient freewheeling in half-bridge configurations without snubbers.
Pb-free plating	Pure Sn lead finish complies with RoHS Directive and supports lead-free reflow soldering up to 260 °C.

Applications

Automotive DC-DC Converters	Industrial Motor Drives
Use Scenario: High-efficiency 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary high-side switch handling continuous 60 A load current with 200 kHz PWM switching. Use Value: 6.6 mΩ R_DS(on) minimizes conduction loss at high current, while 4.5 V logic compatibility eliminates gate driver ICs.	Use Scenario: Three-phase inverter stage for 3 kW servo motor control in factory automation. IC Role / Device Role / Timing Role: Upper-leg power switch in IGBT/MOSFET hybrid bridge, operating at 10–15 kHz with forced air cooling. Use Value: 115 W T_C rating and 1.30 °C/W thermal resistance enable compact heatsink design without derating.
Server Power Supplies	Battery Protection Circuits
Use Scenario: OR-ing FET in redundant 12 V server backplane distribution with hot-swap capability. IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch placed between power source and load bus. Use Value: Low 10.9 mΩ R_DS(on) at 4.5 V ensures minimal voltage drop during inrush, preserving system uptime.	Use Scenario: Primary overcurrent protection FET in 24 V lithium-ion battery pack management system. IC Role / Device Role / Timing Role: Series disconnect switch activated by protection IC during short-circuit or overtemperature events. Use Value: ±200 A pulse rating and 33 A repetitive avalanche current withstand capability prevent failure during fault clearing.

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: High-efficiency 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling continuous 60 A load current with 200 kHz PWM switching.

Use Value: 6.6 mΩ R_DS(on) minimizes conduction loss at high current, while 4.5 V logic compatibility eliminates gate driver ICs.

Use Scenario: Three-phase inverter stage for 3 kW servo motor control in factory automation.

IC Role / Device Role / Timing Role: Upper-leg power switch in IGBT/MOSFET hybrid bridge, operating at 10–15 kHz with forced air cooling.

Use Value: 115 W T_C rating and 1.30 °C/W thermal resistance enable compact heatsink design without derating.

Server Power Supplies

Battery Protection Circuits

Use Scenario: OR-ing FET in redundant 12 V server backplane distribution with hot-swap capability.

IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch placed between power source and load bus.

Use Value: Low 10.9 mΩ R_DS(on) at 4.5 V ensures minimal voltage drop during inrush, preserving system uptime.

Use Scenario: Primary overcurrent protection FET in 24 V lithium-ion battery pack management system.

IC Role / Device Role / Timing Role: Series disconnect switch activated by protection IC during short-circuit or overtemperature events.

Use Value: ±200 A pulse rating and 33 A repetitive avalanche current withstand capability prevent failure during fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N5LF6AG	60 V V_DSS, 5.0 mΩ R_DS(on) @ 10 V, TO-263, but not AEC-Q101 qualified.	Targeted at industrial/commercial SMPS, not automotive-grade reliability testing.	Select when AEC-Q101 is unnecessary and lower R_DS(on) justifies higher cost.
IRF1405PBF	55 V V_DSS, 5.3 mΩ R_DS(on) @ 10 V, TO-220, no logic-level gate (V_GS(th) = 2.0–4.0 V).	Requires gate driver for 3.3 V logic; unsuitable for space-constrained SMT layouts.	Choose only if through-hole mounting and higher gate drive voltage are acceptable.

Compared with STL110N5LF6AG and IRF1405PBF, NP80N055PDG-E1B-AY uniquely combines AEC-Q101 qualification, true logic-level operation down to 4.5 V, and TO-263 thermal performance-making it the sole option for automotive SMT designs requiring zero gate-driver complexity and validated reliability.

Availability

NP80N055PDG-E1B-AY is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery protection circuits requiring stable component supply across extended production lifecycles.

Supply support for NP80N055PDG-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.

The NP80N055PDG-E1B-AY belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for AEC-Q101-compliant automotive power conversion and motor control where low gate drive voltage and high thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current rating for NP80N055PDG-E1B-AY at 25°C case temperature?

The NP80N055PDG-E1B-AY has a DC drain current rating of ±80 A at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain case temperature at or below 25°C; actual usable current must be derated per the Total Power Dissipation vs. Case Temperature curve in the datasheet, especially above 25°C.

Is NP80N055PDG-E1B-AY compatible with lead-free reflow soldering processes?

Yes, NP80N055PDG-E1B-AY features pure Sn (tin) lead plating and is qualified for lead-free reflow soldering with a maximum package surface temperature of 260°C for ≤10 seconds. Its recommended infrared reflow profile includes preheating at 160–180°C for 60–120 seconds and limits time above 220°C to 60 seconds.

Does NP80N055PDG-E1B-AY have avalanche capability, and what are the rated parameters?

Yes, NP80N055PDG-E1B-AY is rated for repetitive avalanche operation: I_AR = 33 A and E_AR = 111 mJ at T_ch ≤ 150°C with R_G = 25 Ω. These values are measured under controlled pulsed conditions and define safe single-pulse energy handling-not continuous operation-and require careful layout to minimize stray inductance.

What is the gate-to-source threshold voltage range for NP80N055PDG-E1B-AY, and how does it affect logic-level drive?

The gate-to-source threshold voltage V_GS(th) for NP80N055PDG-E1B-AY is 1.4–2.5 V at I_D = 250 μA. This low, tightly bounded range ensures full enhancement with 3.3 V or 5 V logic outputs, enabling direct MCU control without external level shifters or gate drivers in most switching applications.

How does the body diode performance of NP80N055PDG-E1B-AY compare to discrete Schottky diodes in freewheeling applications?

The NP80N055PDG-E1B-AY body diode has V_F(S-D) = 0.95–1.5 V at 80 A and t_rr = 38 ns, which is slower and higher-V_F than typical Schottky diodes-but sufficient for non-synchronous rectification in 100–200 kHz converters. Its integrated nature eliminates extra footprint and BOM count, though synchronous rectification with external FETs yields higher efficiency above 200 kHz.

NP80N055PDG-E1B-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 115W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

NP80N055PDG-E1B-AY FAQ

1.How can I place an order for NP80N055PDG-E1B-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N055PDG-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N055PDG-E1B-AY reliable?

The price and inventory of NP80N055PDG-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N055PDG-E1B-AY is usually 5 days.

3.What payment methods are accepted for NP80N055PDG-E1B-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N055PDG-E1B-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N055PDG-E1B-AY?

NP80N055PDG-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N055PDG-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N055PDG-E1B-AY?

For technical support, including NP80N055PDG-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N055PDG-E1B-AY requirements.

6.How does Aetrix verify that NP80N055PDG-E1B-AY is sourced from the original manufacturer or authorized distributors?

All NP80N055PDG-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N055PDG-E1B-AY meets industry standards.

7.What is the process for return or replacement of NP80N055PDG-E1B-AY?

All NP80N055PDG-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N055PDG-E1B-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N055PDG-E1B-AY part is unused and in its original packaging.

Return procedure for NP80N055PDG-E1B-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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