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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N06PLG-E1B-AY

Name: NP80N06PLG-E1B-AY
Brand: Renesas
SKU: NP80N06PLG-E1B-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N06PLG-E1B-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP80N06PLG-E1B-AY.pdf

Description:: MOSFET N-CH 60V 80A TO263

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Product details

Overview

NP80N06PLG-E1B-AY from Renesas Electronics is an N-channel power MOSFET in TO-263 (D²PAK) package, rated for 60 V V_DSS, ±80 A DC drain current, and logic-level gate drive (V_GS(th) = 1.4–2.5 V). It delivers R_DS(on) = 6.2–8.3 mΩ at V_GS = 10 V / I_D = 40 A and supports high-speed switching with t_d(on) = 17–37 ns and Q_G = 85–128 nC. It is used in automotive DC-DC converters and motor control inverters.

For engineers reviewing the NP80N06PLG-E1B-AY datasheet, NP80N06PLG-E1B-AY pinout, NP80N06PLG-E1B-AY application, or NP80N06PLG-E1B-AY equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at 4.5 V gate drive, built-in gate protection diode, and TO-263 thermal performance (R_th(ch-C) = 1.30 °C/W).

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.4–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the integrated gate-source ESD protection diode mitigates transient-induced gate oxide failure.

The device is characterized for repetitive avalanche operation (I_AR = 32 A, E_AR = 102 mJ at T_ch ≤ 150 °C), and its body diode exhibits V_F(S-D) = 0.96–1.5 V at I_F = 80 A with t_rr = 41 ns - enabling use in synchronous rectification and freewheeling paths without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage in off-state; suitable for 48 V automotive bus and industrial 24–48 V systems.
I_D(DC)	±80 A - Continuous drain current at T_C = 25 °C; enables high-power load switching without parallel devices.
R_DS(on)1	6.2–8.3 mΩ - On-resistance at V_GS = 10 V / I_D = 40 A; reduces conduction loss to <0.033 W at 40 A.
R_DS(on)2	7.6–13 mΩ - On-resistance at V_GS = 4.5 V / I_D = 35 A; ensures full enhancement with 5 V microcontrollers.
C_iss	4600–6900 pF - Input capacitance; determines gate drive strength requirement and switching speed trade-off.
Q_G	85–128 nC - Total gate charge; defines energy needed per switch cycle and impacts driver IC selection.
T_ch max	175 °C - Maximum channel temperature; allows operation in under-hood automotive environments with proper heatsinking.

Pinout & Package

NP80N06PLG-E1B-AY uses the TO-263 (MP-25ZP) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 15.25 × 10.0 mm (L × W) and weighs ~1.5 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives logic-level voltage to modulate channel conductivity; protected by internal Zener diode to ±20 V.
2 (Drain)	Main current path output	Connected to high-side or low-side power rail; electrically tied to large copper pad on PCB for thermal and current handling.
3 (Source)	Main current path return	Serves as reference node for gate drive and current sensing; common connection point for source resistors or shunts.
4 (Fin/Drain Tab)	Thermal & electrical drain extension	Exposed metal tab on backside - must be soldered to PCB copper pour for R_th(ch-C) = 1.30 °C/W performance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 5 V MCU systems.
Built-in gate protection diode	Integrated Zener between gate and source clamps transients to ±20 V - reduces external ESD protection component count.
Super low R_DS(on)	6.2 mΩ typical at 10 V - cuts I²R losses by >30% vs. comparable 8 mΩ MOSFETs in 40 A applications.
AEC-Q101 qualified	Validated for automotive under-hood use per stress test requirements - supports functional safety designs up to ASIL-B.
High avalanche capability	Rated for 32 A repetitive avalanche current - enables robustness against inductive kickback in motor drive and relay snubbing.

Applications

Automotive DC-DC Converters	Industrial Motor Drives
Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 100–200 kHz with precise dead-time control. Use Value: Low R_DS(on) at 4.5 V gate drive enables direct MCU control; TO-263 thermal performance sustains >75 °C case temperature during continuous 60 A operation.	Use Scenario: Three-phase inverter stage for 3 kW HVAC compressor drives. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules, switching at 8–16 kHz. Use Value: Fast t_d(off) (70–140 ns) and low Q_G reduce switching losses; avalanche rating handles motor phase-current reversal transients.
Server Power Supplies	EV Onboard Chargers (OBC)
Use Scenario: Primary-side synchronous rectifier in 80 PLUS Titanium AC-DC front-end supplies. IC Role / Device Role / Timing Role: Secondary-side switch in LLC resonant topology, conducting high-frequency AC current. Use Value: Low C_oss (370–560 pF) minimizes capacitive turn-on loss; body diode t_rr = 41 ns prevents reverse recovery oscillation.	Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 12 V auxiliary supply. IC Role / Device Role / Timing Role: Active clamp switch managing transformer leakage energy during flyback cycles. Use Value: 60 V V_DSS and 175 °C T_ch support high-voltage isolation barrier design; Pb-free plating meets automotive RoHS compliance.

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 100–200 kHz with precise dead-time control.

Use Value: Low R_DS(on) at 4.5 V gate drive enables direct MCU control; TO-263 thermal performance sustains >75 °C case temperature during continuous 60 A operation.

Use Scenario: Three-phase inverter stage for 3 kW HVAC compressor drives.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules, switching at 8–16 kHz.

Use Value: Fast t_d(off) (70–140 ns) and low Q_G reduce switching losses; avalanche rating handles motor phase-current reversal transients.

Server Power Supplies

EV Onboard Chargers (OBC)

Use Scenario: Primary-side synchronous rectifier in 80 PLUS Titanium AC-DC front-end supplies.

IC Role / Device Role / Timing Role: Secondary-side switch in LLC resonant topology, conducting high-frequency AC current.

Use Value: Low C_oss (370–560 pF) minimizes capacitive turn-on loss; body diode t_rr = 41 ns prevents reverse recovery oscillation.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Active clamp switch managing transformer leakage energy during flyback cycles.

Use Value: 60 V V_DSS and 175 °C T_ch support high-voltage isolation barrier design; Pb-free plating meets automotive RoHS compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N6LF8AG	60 V, 120 A, R_DS(on) = 4.5 mΩ @ 10 V; TO-263 package; no integrated gate protection diode.	Higher current rating but requires external gate protection; not AEC-Q101 qualified.	Select when higher peak current headroom is needed and automotive qualification is not required.
IXFH80N60X3	600 V, 80 A, R_DS(on) = 12.5 mΩ @ 10 V; TO-247 package; optimized for high-voltage hard-switching.	Designed for 600 V systems - unsuitable for 48 V bus due to excessive conduction loss and cost penalty.	Not recommended for 60 V applications; only consider if system voltage exceeds 300 V.

Compared with STL120N6LF8AG and IXFH80N60X3, NP80N06PLG-E1B-AY uniquely balances AEC-Q101 compliance, 4.5 V logic compatibility, integrated gate protection, and thermal efficiency in TO-263 - making it optimal for space-constrained automotive and industrial 48 V power stages where reliability and simplified layout are critical.

Availability

NP80N06PLG-E1B-AY is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for NP80N06PLG-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

NP80N06PLG-E1B-AY belongs to Renesas' high-current logic-level power MOSFET product line, designed specifically for AEC-Q101-compliant 48 V automotive electrification and high-efficiency industrial switching applications.

FAQ

What is the maximum gate-to-source voltage rating for NP80N06PLG-E1B-AY?

The absolute maximum gate-to-source voltage (V_GS) for NP80N06PLG-E1B-AY is ±20 V. This rating applies under steady-state and transient conditions. Exceeding this limit risks permanent gate oxide damage. The device includes an internal Zener diode between gate and source to provide clamping, but external gate resistors and TVS protection are still recommended in noisy automotive environments. Always verify gate drive circuit margins using the NP80N06PLG-E1B-AY datasheet's transient specifications.

Is NP80N06PLG-E1B-AY suitable for use in synchronous rectification circuits?

Yes, NP80N06PLG-E1B-AY is well-suited for synchronous rectification due to its low R_DS(on) (6.2–8.3 mΩ), fast switching (t_d(on) = 17–37 ns), and body diode characteristics (V_F(S-D) = 0.96–1.5 V, t_rr = 41 ns). Its logic-level gate drive allows direct control by PWM controllers without level-shifting. For optimal performance in NP80N06PLG-E1B-AY-based synchronous rectifiers, ensure gate timing avoids shoot-through and accounts for the device's 25–59 S forward transfer admittance.

Does NP80N06PLG-E1B-AY have built-in ESD protection?

Yes, NP80N06PLG-E1B-AY integrates a gate-source protection diode (Zener-type) rated to ±20 V, as confirmed in the "Features" section and Equivalent Circuit diagram of its datasheet. This provides basic ESD immunity during handling and board assembly. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, for robust operation in automotive or industrial systems, external gate resistors and transient suppressors remain necessary alongside the internal diode in NP80N06PLG-E1B-AY designs.

What is the thermal resistance from channel to case (R_th(ch-C)) for NP80N06PLG-E1B-AY?

The channel-to-case thermal resistance (R_th(ch-C)) for NP80N06PLG-E1B-AY is 1.30 °C/W, measured under standard mounting conditions with the drain tab fully soldered to a 10 cm² copper area on a 1.6 mm FR-4 PCB. This value enables efficient heat transfer to external heatsinks and is critical for calculating maximum allowable power dissipation at given case temperatures. When designing thermal management for NP80N06PLG-E1B-AY, always use this R_th(ch-C) in conjunction with the specified 175 °C maximum channel temperature.

Can NP80N06PLG-E1B-AY be used in avalanche mode, and what are the limits?

Yes, NP80N06PLG-E1B-AY is rated for repetitive avalanche operation: I_AR = 32 A and E_AR = 102 mJ at T_ch ≤ 150 °C with R_G = 25 Ω. These parameters are validated per JEDEC JESD24-11 and apply only under pulsed conditions (PW ≤ 10 μs, duty cycle ≤ 1%). Avalanche use must be carefully modeled in SPICE and verified with oscilloscope measurements of V_DS overshoot and energy dissipation. Do not rely on avalanche capability for continuous operation - NP80N06PLG-E1B-AY is intended for normal switching, with avalanche as a ruggedness margin.

NP80N06PLG-E1B-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 115W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

NP80N06PLG-E1B-AY FAQ

1.How can I place an order for NP80N06PLG-E1B-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N06PLG-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N06PLG-E1B-AY reliable?

The price and inventory of NP80N06PLG-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N06PLG-E1B-AY is usually 5 days.

3.What payment methods are accepted for NP80N06PLG-E1B-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N06PLG-E1B-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N06PLG-E1B-AY?

NP80N06PLG-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N06PLG-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N06PLG-E1B-AY?

For technical support, including NP80N06PLG-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N06PLG-E1B-AY requirements.

6.How does Aetrix verify that NP80N06PLG-E1B-AY is sourced from the original manufacturer or authorized distributors?

All NP80N06PLG-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N06PLG-E1B-AY meets industry standards.

7.What is the process for return or replacement of NP80N06PLG-E1B-AY?

All NP80N06PLG-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N06PLG-E1B-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N06PLG-E1B-AY part is unused and in its original packaging.

Return procedure for NP80N06PLG-E1B-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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