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Renesas NP82N04MDG-S18-AY
- Part No.:
- NP82N04MDG-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
NP82N04MDG-S18-AY.pdf
- Description:
- MOSFET N-CH 40V 82A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:700
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Product details
Overview
NP82N04MDG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 package, designed for high-current DC switching in automotive and industrial power systems. It delivers 82 A DC drain current, 4.2 mΩ RDS(on) at VGS = 10 V, and AEC-Q101 qualification - enabling use in motor control, DC-DC converters, and battery protection circuits.
For engineers reviewing the NP82N04MDG-S18-AY datasheet, NP82N04MDG-S18-AY pinout, NP82N04MDG-S18-AY application, or NP82N04MDG-S18-AY equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.4–2.5 V), low RDS(on) at 4.5 V (8.5 mΩ max), repetitive avalanche rating (43 A / 185 mJ), and thermal resistance (Rth(ch-C) = 1.05 °C/W).
Technical Context
This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.4–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while its 6000 pF typical input capacitance supports moderate-speed PWM operation up to ~100 kHz without excessive gate drive power.
The integrated body diode exhibits 0.9–1.5 V forward voltage at 82 A and 43 ns reverse recovery time under defined di/dt conditions, making it suitable for freewheeling in synchronous rectification and H-bridge topologies where controlled commutation is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage in off-state; defines use in ≤36 V nominal battery systems (e.g., 12 V/24 V automotive rails). |
| RDS(on) @ VGS=10 V | 4.2 mΩ max - Enables <1 W conduction loss at 41 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ VGS=4.5 V | 8.5 mΩ max - Ensures usable on-resistance with 5 V microcontroller GPIOs or low-voltage gate drivers. |
| ID(DC) | ±82 A - Continuous drain current rating at TC = 25°C; requires heatsinking for sustained operation. |
| QG | 150 nC max - Total gate charge determines required gate driver peak current for <100 ns switching transitions. |
| Tch max | 175°C - Maximum channel temperature; sets upper limit for thermal design margin in sealed enclosures. |
| EAR | 185 mJ - Repetitive avalanche energy at Tch ≤ 150°C; supports unclamped inductive switching in relay replacement or solenoid drive. |
Pinout & Package
NP82N04MDG-S18-AY is housed in a TO-220 (MP-25K) package with exposed drain tab (fin) for thermal conduction. The case is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ESD-safe handling and gate resistor (RG = 25 Ω typical) to control dV/dt and oscillation. |
| 2 (Drain) | Main current path (high-side) | Connected to load supply rail; tab is electrically tied to Drain and must be isolated from heatsink unless referenced to same potential. |
| 3 (Source) | Return path / reference node | Serves as common return for load current and gate drive reference; forms low-impedance ground loop for switching noise control. |
| 4 (Fin / Drain Tab) | Thermal & electrical drain connection | Primary heat transfer surface; must be mounted to heatsink via insulating thermal pad or isolation washer if source is not at chassis ground. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.4–2.5 V enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry. |
| Super low RDS(on) | 4.2 mΩ @ 10 V reduces I²R losses by >30% vs. legacy 6–8 mΩ devices at same current, improving efficiency in 48 V subsystems. |
| AEC-Q101 qualified | Validated for automotive underhood applications including engine control modules and EPS motor drivers per stress test requirements. |
| Repetitive avalanche rated | Withstands 43 A / 185 mJ unclamped inductive energy events - eliminates need for external snubbers in solenoid or relay coil driving. |
| Pb-free plating | Sn (tin) lead finish complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 marking. |
Applications
| Motor Control | Battery Protection |
|---|---|
Use Scenario: Driving brushed DC motors in automotive seat adjusters or HVAC blowers with PWM at 20–50 kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor current flow and direction in half-bridge configuration. Use Value: Low RDS(on) minimizes heat generation during continuous 40–60 A stall current, extending system lifetime in confined spaces. | Use Scenario: Overcurrent and short-circuit protection in 12 V/24 V lithium-ion battery packs for e-bikes or UPS systems. IC Role / Device Role / Timing Role: Main discharge FET in protection IC-controlled power path, activated only during fault conditions. Use Value: 328 A pulsed rating allows safe interruption of catastrophic short-circuits before fuse activation or pack damage occurs. |
| DC-DC Converter | Industrial Power Supply |
Use Scenario: Synchronous rectifier in 400 W isolated flyback or LLC resonant converter for telecom power shelves. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to reduce conduction loss and improve efficiency above 12 V output. Use Value: Body diode VF(S-D) = 0.9–1.5 V and trr = 43 ns enable clean commutation with minimal voltage overshoot during synchronous rectification. | Use Scenario: Primary-side switching element in 1 kW industrial AC-DC front-end using active PFC and two-switch forward topology. IC Role / Device Role / Timing Role: High-current, high-reliability main switch handling 82 A continuous conduction mode (CCM) operation. Use Value: Rth(ch-C) = 1.05 °C/W allows mounting on compact extruded heatsinks while maintaining Tch < 150°C at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 3.7 mΩ @ 10 V, TO-220FP package (isolated tab) | Higher current rating but larger footprint; lacks AEC-Q101 certification | Preferred for non-automotive high-efficiency SMPS where higher ID and lower RDS(on) justify cost and layout change. |
| IXFH82N40P3 | 400 V, 82 A, RDS(on) = 45 mΩ @ 10 V, TO-247 package | Higher voltage rating but significantly higher on-resistance; not logic-level (VGS(th) = 3.5–5.5 V) | Only suitable when 400 V blocking is required; unsuitable for 12/24 V systems due to excessive conduction loss and gate drive incompatibility. |
Compared with STL220N4F7AG and IXFH82N40P3, NP82N04MDG-S18-AY offers optimal balance of logic-level drive, AEC-Q101 compliance, and thermal performance in TO-220 for 40 V automotive and industrial switching - whereas STL220N4F7AG trades qualification for higher current, and IXFH82N40P3 sacrifices voltage compatibility and gate drive simplicity for ruggedness at higher voltages.
Availability
NP82N04MDG-S18-AY is available at Aetrix Electronics and suitable for motor control, battery protection, and DC-DC converter designs requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for NP82N04MDG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.
The NP82N04MDG-S18-AY belongs to Renesas' high-current power MOSFET product line, engineered specifically for robust, high-efficiency switching in automotive subsystems and industrial power conversion where AEC-Q101 compliance and thermal resilience are mandatory.
FAQ
What is the gate threshold voltage range for NP82N04MDG-S18-AY?
The gate threshold voltage (VGS(th)) for NP82N04MDG-S18-AY is specified as 1.4 V minimum to 2.5 V maximum at ID = 250 μA and VDS = VGS. This logic-level range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, and the NP82N04MDG-S18-AY maintains stable switching behavior across temperature from −55°C to 175°C.
Is NP82N04MDG-S18-AY qualified for automotive applications?
Yes, NP82N04MDG-S18-AY is explicitly AEC-Q101 qualified per the official Renesas datasheet D19800EJ1V0DS. This qualification covers stress tests including HTGB, HTRB, uHAST, and temperature cycling, confirming suitability for under-hood automotive applications such as motor drivers and battery management systems - a key differentiator of the NP82N04MDG-S18-AY versus generic industrial MOSFETs.
What is the maximum continuous drain current rating for NP82N04MDG-S18-AY?
The maximum continuous drain current (ID(DC)) for NP82N04MDG-S18-AY is ±82 A at case temperature TC = 25°C. This rating assumes proper heatsinking; derating applies above 25°C - for example, at TC = 100°C, the usable ID(DC) drops to approximately 45 A. The NP82N04MDG-S18-AY's Rth(ch-C) = 1.05 °C/W directly informs this thermal design requirement.
Does NP82N04MDG-S18-AY have an integrated body diode, and what are its characteristics?
Yes, NP82N04MDG-S18-AY includes an integrated body diode with forward voltage VF(S-D) = 0.9–1.5 V at IF = 82 A and reverse recovery time trr = 43 ns under defined conditions (di/dt = 100 A/μs). These parameters make the NP82N04MDG-S18-AY suitable for freewheeling in H-bridge and synchronous rectifier configurations where fast, low-loss commutation is needed.
What package type and pin configuration does NP82N04MDG-S18-AY use?
NP82N04MDG-S18-AY uses the TO-220 (MP-25K) package with four terminals: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, and Pin 4 = Fin (electrically connected to Drain). The metal tab serves as both thermal interface and drain connection, requiring electrical isolation from the heatsink unless the drain net is chassis-ground referenced - a defining mechanical feature of the NP82N04MDG-S18-AY layout implementation.
NP82N04MDG-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 143W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
NP82N04MDG-S18-AY FAQ
1.How can I place an order for NP82N04MDG-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP82N04MDG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP82N04MDG-S18-AY reliable?
The price and inventory of NP82N04MDG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N04MDG-S18-AY is usually 5 days.
3.What payment methods are accepted for NP82N04MDG-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N04MDG-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP82N04MDG-S18-AY?
NP82N04MDG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP82N04MDG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP82N04MDG-S18-AY?
For technical support, including NP82N04MDG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N04MDG-S18-AY requirements.
6.How does Aetrix verify that NP82N04MDG-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP82N04MDG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N04MDG-S18-AY meets industry standards.
7.What is the process for return or replacement of NP82N04MDG-S18-AY?
All NP82N04MDG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP82N04MDG-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP82N04MDG-S18-AY part is unused and in its original packaging.
Return procedure for NP82N04MDG-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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