Renesas NP82N04MLG-S18-AY

Overview

NP82N04MLG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 package, designed for high-current DC switching with logic-level gate drive capability. It delivers R_DS(on) = 4.2 mΩ max at V_GS = 10 V and I_D = 41 A, supports ±82 A DC drain current, and is AEC-Q101 qualified for automotive applications such as motor control and battery management.

For engineers reviewing the NP82N04MLG-S18-AY datasheet, NP82N04MLG-S18-AY pinout, NP82N04MLG-S18-AY application, or NP82N04MLG-S18-AY equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (8.5 mΩ max), built-in gate protection diode, 143 W case-power dissipation, and thermal resistance of 1.05 °C/W (ch-to-case) - critical for thermally constrained high-efficiency power stages.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage (1.4–2.5 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting. The integrated gate protection diode guards against ESD but requires external clamping for transient overvoltage events exceeding ±20 V.

Designed for unidirectional high-current switching, it features a body diode with VF(S-D) = 0.9–1.5 V at 82 A and trr = 43 ns, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Avalanche energy rating (EAR = 185 mJ) supports robust operation under inductive load switching stress.

Key Specifications

Pinout & Package

NP82N04MLG-S18-AY uses the TO-220 (MP-25K) package with 4 terminals: Gate (pin 1), Drain (pin 2), Source (pin 3), and Fin/Drain tab (pin 4). The metal tab is electrically connected to the Drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IXFH82N40P3, NP82N04MLG-S18-AY uniquely balances logic-level drive, ultra-low R_DS(on), AEC-Q101 compliance, and TO-220 thermal performance - making it optimal for cost-sensitive, high-reliability 40 V automotive and industrial switching where gate simplicity and thermal headroom are prioritized.

Availability

NP82N04MLG-S18-AY is available at Aetrix Electronics and suitable for automotive motor control, industrial PLC output stages, battery contactor switching, and DC-DC converter synchronous rectification requiring stable component supply and long-term production continuity.

Supply support for NP82N04MLG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP82N04MLG-S18-AY belongs to Renesas' legacy power MOSFET product line developed for high-current, high-reliability switching in automotive and industrial environments - emphasizing ruggedness, low conduction loss, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current rating for NP82N04MLG-S18-AY?

The NP82N04MLG-S18-AY has a maximum continuous drain current (I_D(DC)) of ±82 A at T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature per the datasheet's derating curve - at 100°C case temperature, the usable DC current drops to approximately 45 A. Always verify thermal design using R_th(ch-C) = 1.05 °C/W and ambient conditions in your application.

Is NP82N04MLG-S18-AY compatible with 3.3 V microcontroller GPIOs?

Yes, NP82N04MLG-S18-AY is logic-level compatible and fully enhances at V_GS = 4.5 V, making it directly drivable by 3.3 V and 5 V microcontrollers. Its gate threshold voltage (V_GS(th)) ranges from 1.4 V to 2.5 V, ensuring strong turn-on even with marginal gate drive. However, for optimal R_DS(on) performance (≤4.2 mΩ), a 10 V gate drive is recommended - a simple charge-pump or dual-supply gate driver may be added if lowest conduction loss is critical.

Does NP82N04MLG-S18-AY include integrated ESD protection?

Yes, NP82N04MLG-S18-AY incorporates a built-in gate-source Zener diode that clamps V_GS to ±20 V, providing basic ESD protection per human-body model (HBM). This protects against handling damage but does not replace external TVS or RC snubbers for system-level transients. The datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied," so robust designs must include gate resistors and/or transient suppressors in high-noise environments.

What is the avalanche energy rating of NP82N04MLG-S18-AY and how is it tested?

NP82N04MLG-S18-AY is rated for repetitive avalanche energy (E_AR) of 185 mJ per pulse, tested under conditions of T_ch ≤ 150°C and R_G = 25 Ω. This rating confirms its ability to safely absorb inductive kickback energy during switching - for example, in motor drive or solenoid control. The corresponding repetitive avalanche current (I_AR) is 43 A. These parameters are validated per JEDEC JESD24-1 and are critical for designing fault-tolerant power stages without external freewheeling diodes.

Can NP82N04MLG-S18-AY be used in surface-mount designs?

No, NP82N04MLG-S18-AY uses the through-hole TO-220 (MP-25K) package and is not suitable for standard surface-mount assembly. Its metal tab and leadframe geometry require wave soldering or hand-soldering with appropriate thermal management. For SMT alternatives, consider Renesas' equivalent DFN or LFPAK packages (e.g., NP82N04MLG in LFPAK56), but note those have different pinouts, thermal paths, and ratings - direct substitution is not possible without PCB redesign and validation.