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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP82N04MUG-S18-AY

Name: NP82N04MUG-S18-AY
Brand: Renesas
SKU: NP82N04MUG-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP82N04MUG-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: NP82N04MUG-S18-AY.pdf

Description:: MOSFET N-CH 40V 82A TO220-3

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Product details

Overview

NP82N04MUG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 package, designed for high-current DC switching in automotive and industrial power stages. It delivers 82 A DC drain current, 4.2 mΩ max R_DS(on) at V_GS = 10 V, and 143 W total power dissipation at T_C = 25°C - enabling robust motor drive and battery protection circuits.

For engineers reviewing the NP82N04MUG-S18-AY datasheet, NP82N04MUG-S18-AY pinout, NP82N04MUG-S18-AY application, or NP82N04MUG-S18-AY equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on), high pulsed current capability (328 A), and thermal resistance of 1.05°C/W (ch-to-case), critical for thermally constrained 12 V/24 V systems.

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) and non-logic-level drive requirement mandate ≥10 V gate drive for full enhancement, while its 6500 pF typical input capacitance supports stable gate control with moderate driver strength.

The integrated body diode exhibits 0.9–1.5 V forward voltage at 82 A and 43 ns reverse recovery time under defined di/dt conditions, making it suitable for freewheeling in synchronous rectifier or H-bridge configurations where controlled commutation is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(on) max	4.2 mΩ at V_GS = 10 V, I_D = 41 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D(DC)	±82 A at T_C = 25°C - Supports high-power motor drivers and battery disconnect switches.
Q_G	106–160 nC - Determines gate driver power and switching speed; compatible with standard 1–2 A peak drivers.
R_th(ch-C)	1.05°C/W - Allows direct mounting to heatsinks with predictable junction temperature rise under continuous load.
Avalanche Energy	185 mJ (repetitive) - Provides ruggedness against inductive switching transients without external snubbers.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drive while avoiding false triggering near ground.

Pinout & Package

NP82N04MUG-S18-AY is housed in a TO-220 (MP-25K) package with 4 terminals: Gate, Drain, Source, and Fin (Drain). The metal tab is electrically connected to the Drain and serves as the primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 6500 pF C_iss.
2. Drain	Main current output terminal	Connected to high-side or low-side switch node; electrically tied to metal tab for thermal and electrical integration.
3. Source	Main current return terminal	Serves as reference for gate drive; must be routed with low inductance to minimize switching oscillation.
4. Fin (Drain)	Drain thermal/electrical extension	Exposed metal surface for mechanical mounting and heat transfer; must be electrically isolated from PCB unless Drain referenced to chassis.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
Super low R_DS(on)	3.4 mΩ typical at V_GS = 10 V enables >98% efficiency in 40 A DC loads at 12 V.
High repetitive avalanche rating	43 A / 185 mJ allows operation in inductive load switching without external clamping components.
Pb-free plating	RoHS-compliant pure Sn lead finish ensures compatibility with modern reflow and wave soldering processes.
TO-220 mechanical robustness	1.9 g mass and standardized footprint support high-vibration environments and manual assembly reliability.

Applications

Automotive Motor Control	Battery Protection Circuit
Use Scenario: Driving 12 V BLDC fans or window lift motors in passenger vehicles. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor phase current with PWM up to 20 kHz. Use Value: Low R_DS(on) minimizes I²R heating during continuous 50–70 A stall conditions, extending system lifetime.	Use Scenario: Overcurrent and short-circuit protection in 12 V lead-acid or LiFePO₄ battery packs. IC Role / Device Role / Timing Role: Solid-state disconnect switch activated by protection IC upon fault detection. Use Value: 328 A pulsed current rating handles brief surge events (e.g., jump-start), while avalanche energy absorbs inductive kickback from solenoids.
Industrial DC Power Distribution	Power Supply OR-ing
Use Scenario: Main power switch in programmable logic controller (PLC) backplane distribution modules. IC Role / Device Role / Timing Role: Load switch managing 24 V/48 V supply rail enablement and hot-swap sequencing. Use Value: 83.3°C/W ch-to-ambient thermal resistance permits operation without forced air in enclosed cabinets up to 60°C ambient.	Use Scenario: OR-ing diode replacement in redundant 12 V power supplies for telecom equipment. IC Role / Device Role / Timing Role: Forward-conducting switch replacing Schottky diodes to reduce forward drop and heat generation. Use Value: 0.9 V typical body diode VF at 82 A cuts conduction loss by >60% versus 0.45 V Schottky at same current, improving system efficiency.

Automotive Motor Control

Battery Protection Circuit

Use Scenario: Driving 12 V BLDC fans or window lift motors in passenger vehicles.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor phase current with PWM up to 20 kHz.

Use Value: Low R_DS(on) minimizes I²R heating during continuous 50–70 A stall conditions, extending system lifetime.

Use Scenario: Overcurrent and short-circuit protection in 12 V lead-acid or LiFePO₄ battery packs.

IC Role / Device Role / Timing Role: Solid-state disconnect switch activated by protection IC upon fault detection.

Use Value: 328 A pulsed current rating handles brief surge events (e.g., jump-start), while avalanche energy absorbs inductive kickback from solenoids.

Industrial DC Power Distribution

Power Supply OR-ing

Use Scenario: Main power switch in programmable logic controller (PLC) backplane distribution modules.

IC Role / Device Role / Timing Role: Load switch managing 24 V/48 V supply rail enablement and hot-swap sequencing.

Use Value: 83.3°C/W ch-to-ambient thermal resistance permits operation without forced air in enclosed cabinets up to 60°C ambient.

Use Scenario: OR-ing diode replacement in redundant 12 V power supplies for telecom equipment.

IC Role / Device Role / Timing Role: Forward-conducting switch replacing Schottky diodes to reduce forward drop and heat generation.

Use Value: 0.9 V typical body diode VF at 82 A cuts conduction loss by >60% versus 0.45 V Schottky at same current, improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 1.6 mΩ, TO-220FP package; lower R_DS(on) but higher Q_G (190 nC).	Higher current handling suits larger motor drives; requires stronger gate driver due to higher capacitance.	Select when higher peak current and lower conduction loss outweigh gate drive complexity.
IXTP82N04T	40 V, 82 A, 4.5 mΩ, TO-220; similar R_DS(on) but not AEC-Q101 qualified.	Lacks automotive qualification; suitable for industrial-only designs where qualification is not mandated.	Select for cost-sensitive industrial applications where AEC-Q101 compliance is unnecessary.

Compared with STL220N4F7AG and IXTP82N04T, NP82N04MUG-S18-AY offers balanced performance: AEC-Q101 qualification for automotive use, proven 4.2 mΩ R_DS(on) at 41 A, and 1.05°C/W thermal resistance - making it optimal for space-constrained, thermally demanding 12 V/24 V systems requiring reliability validation.

Availability

NP82N04MUG-S18-AY is available at Aetrix Electronics and suitable for automotive motor control, battery protection, industrial DC power distribution, and power supply OR-ing requiring stable component supply across production lifecycles.

Supply support for NP82N04MUG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP82N04MUG-S18-AY belongs to Renesas' high-current N-channel power MOSFET product line, engineered specifically for ruggedized 12 V/24 V automotive and industrial switching applications demanding AEC-Q101 reliability and low conduction loss.

FAQ

What is the gate threshold voltage range for NP82N04MUG-S18-AY?

The gate threshold voltage (V_GS(th)) for NP82N04MUG-S18-AY is specified from 2.0 V to 4.0 V at I_D = 250 μA and V_DS = V_GS. This range ensures reliable turn-on with standard 10 V gate drive while preventing unintended activation near ground potential. The NP82N04MUG-S18-AY is not a logic-level MOSFET and requires ≥10 V for full enhancement and minimal R_DS(on).

Is NP82N04MUG-S18-AY qualified for automotive applications?

Yes, NP82N04MUG-S18-AY is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. This qualification confirms its suitability for automotive powertrain, chassis, and body electronics applications where reliability under harsh environmental conditions is mandatory. NP82N04MUG-S18-AY meets these requirements as documented in Renesas' official datasheet D19803EJ1V0DS.

What is the maximum continuous drain current rating for NP82N04MUG-S18-AY?

The maximum continuous drain current (I_D(DC)) for NP82N04MUG-S18-AY is ±82 A at case temperature T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the datasheet's derating curve. At T_C = 100°C, the usable I_D(DC) drops to approximately 45 A. NP82N04MUG-S18-AY maintains this rating only when mounted on a heatsink capable of maintaining the case temperature within specification.

Does NP82N04MUG-S18-AY have an integrated body diode, and what are its characteristics?

Yes, NP82N04MUG-S18-AY includes an integrated body diode with a forward voltage (V_F(S-D)) of 0.9–1.5 V at I_F = 82 A and V_GS = 0 V. Its reverse recovery time (t_rr) is 43 ns under specified conditions (di/dt = 100 A/μs). These parameters make the NP82N04MUG-S18-AY suitable for freewheeling and synchronous rectification in H-bridge and buck converter topologies where controlled diode conduction is required.

What is the thermal resistance from channel to case for NP82N04MUG-S18-AY?

The channel-to-case thermal resistance (R_th(ch-C)) for NP82N04MUG-S18-AY is 1.05°C/W, measured under steady-state conditions with the device mounted to a large heatsink. This low value reflects efficient heat transfer from the silicon die through the TO-220 package's metal tab. When designing thermal management for NP82N04MUG-S18-AY, this parameter must be combined with heatsink and interface thermal resistances to calculate total junction-to-ambient resistance and ensure T_j remains below 175°C.

NP82N04MUG-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 9750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 143W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

NP82N04MUG-S18-AY FAQ

1.How can I place an order for NP82N04MUG-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP82N04MUG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP82N04MUG-S18-AY reliable?

The price and inventory of NP82N04MUG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N04MUG-S18-AY is usually 5 days.

3.What payment methods are accepted for NP82N04MUG-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N04MUG-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP82N04MUG-S18-AY?

NP82N04MUG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP82N04MUG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP82N04MUG-S18-AY?

For technical support, including NP82N04MUG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N04MUG-S18-AY requirements.

6.How does Aetrix verify that NP82N04MUG-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP82N04MUG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N04MUG-S18-AY meets industry standards.

7.What is the process for return or replacement of NP82N04MUG-S18-AY?

All NP82N04MUG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP82N04MUG-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP82N04MUG-S18-AY part is unused and in its original packaging.

Return procedure for NP82N04MUG-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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