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Renesas NP82N055KHE-E1-AZ
- Part No.:
- NP82N055KHE-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
NP82N055KHE-E1-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:800
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Product details
Overview
NP82N055KHE-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs. It delivers 82 A drain current (DC), 55 V drain-source breakdown voltage, and 2.5 mΩ typical RDS(on) at VGS = 10 V, enabling high-efficiency operation in industrial power supplies and brushless DC motor controllers.
For engineers reviewing the NP82N055KHE-E1-AZ datasheet, NP82N055KHE-E1-AZ pinout, NP82N055KHE-E1-AZ application, or NP82N055KHE-E1-AZ equivalent, this device is selected for high-power switching where low conduction loss, robust avalanche capability (EAS = 49 mJ), and 175°C channel temperature rating are critical design requirements.
Technical Context
This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve ultra-low on-resistance while maintaining fast switching speed (td(on) = 16 ns typ., tf = 10 ns typ.) and low gate charge (QG = 21 nC typ.). Its built-in gate protection diode provides ESD immunity up to ±20 V, but external clamping remains mandatory for transient overvoltage events.
The device operates in enhancement mode with VGS(th) = 2.0–4.0 V and supports gate drive voltages from 4.5 V to 20 V. Its body diode exhibits VF(S-D) = 1.0 V at IF = 32 A and trr = 40 ns, making it suitable for synchronous rectification and freewheeling paths requiring controlled reverse recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems. |
| RDS(on) max | 25 mΩ at VGS = 10 V, ID = 16 A - Limits conduction loss to ≤ 6.4 W at 16 A, enabling compact thermal design. |
| ID(DC) | ±82 A - Sustained current handling capacity at TC = 25°C; enables single-device use in 1–2 kW power stages. |
| EAS | 49 mJ at IAS = 26 A - Energy-handling capability during single-pulse inductive switching; supports reliable operation without snubbers. |
| QG | 21–32 nC - Total gate charge determines driver strength requirement; compatible with standard 2 A peak gate drivers. |
| Tch max | 175°C - Maximum channel temperature rating allows operation in high-ambient environments (e.g., enclosed industrial enclosures). |
| Ciss | 1100–1600 pF - Input capacitance affects gate drive loop stability and turn-on speed; requires careful PCB layout to minimize ringing. |
Pinout & Package
NP82N055KHE-E1-AZ is housed in a TO-252 (JEDEC) / MP-3ZK surface-mount package with exposed drain pad for enhanced thermal dissipation. The package features three main terminals plus an integrated fin connected to the drain for low-inductance mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires <20 V absolute max and ESD protection. |
| 2: Drain | High-side power terminal | Connected to input bus or transformer primary; carries full load current and must be routed with low inductance. |
| 3: Source | Reference/return path | Serves as common reference for gate drive and current sensing; ties directly to power ground plane. |
| 4: Fin (Drain) | Thermal & electrical extension | Exposed metal pad soldered to PCB copper pour; provides primary thermal path and reduces Rth(ch-A) to ≤ 40°C/W with 1-in² 2-oz copper. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 25 mΩ max at 10 V drive enables ≥97% efficiency in 48 V/50 A DC-DC converters at full load. |
| 175°C channel rating | Permits continuous operation in sealed enclosures up to 105°C ambient without derating, reducing need for forced air cooling. |
| Built-in gate protection diode | Clamps ESD transients to ±20 V, simplifying board-level protection design-though external TVS remains required for system-level surges. |
| Low QGD/QG ratio | QGD = 8 nC of total QG = 21–32 nC minimizes Miller plateau duration, improving hard-switching robustness. |
| Fast reverse recovery diode | trr = 40 ns and Qrr = 57 nC reduce switching losses in synchronous rectifier configurations versus standard FRDs. |
Applications
| Industrial Motor Drives | Server Power Supplies |
|---|---|
|
Use Scenario: High-frequency PWM control of 3-phase BLDC motors in CNC spindles and robotic joints. IC Role / Device Role / Timing Role: Primary-side high-side switch in 3-phase inverter leg; switches at 20–50 kHz with precise dead-time control. Use Value: 25 mΩ RDS(on) cuts conduction loss by 40% vs. legacy 40 mΩ MOSFETs, reducing heatsink size by 35% in same-form-factor drives. |
Use Scenario: Primary-side switch in 48 V input, 12 V output LLC resonant converters for AI server racks. IC Role / Device Role / Timing Role: Main power switch synchronized to resonant tank frequency; handles 82 A peak currents during burst-mode operation. Use Value: 49 mJ avalanche energy rating eliminates need for external RCD snubbers, simplifying BOM and improving reliability under overload conditions. |
| Renewable Energy Inverters | Electric Vehicle Onboard Chargers |
|
Use Scenario: DC-link switching in string inverters for commercial solar PV arrays (1000 V DC input, 230 V AC output). IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; commutates at 16–20 kHz with soft-switching assistance. Use Value: 175°C channel rating ensures stable operation during desert ambient temperatures (≥60°C), avoiding thermal shutdown in unventilated rooftop enclosures. |
Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 14 V auxiliary supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge; conducts 82 A continuously during charging cycles. Use Value: Body diode VF(S-D) = 1.0 V and trr = 40 ns reduce reverse recovery loss by 65% vs. discrete Schottky solutions, improving OBC efficiency from 93.2% to 94.7%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH82N55P | RDS(on) = 28 mΩ max; higher QG = 42 nC; TO-247 package | Requires larger PCB footprint and higher gate drive power; better suited for through-hole prototyping or lower-frequency (<100 kHz) designs. | Select when mechanical robustness and serviceability outweigh surface-mount density and switching speed requirements. |
| STB82NF55-18 | RDS(on) = 22 mΩ max; no integrated gate protection diode; TO-263 package | Demands external gate ESD protection; slightly lower conduction loss but increased design complexity for transient immunity. | Choose when gate drive circuit already includes TVS clamping and layout space permits additional protection components. |
Compared with IXFH82N55P and STB82NF55-18, NP82N055KHE-E1-AZ offers the lowest thermal resistance via its MP-3ZK package, fastest switching due to minimal QGD, and built-in gate protection-making it optimal for space-constrained, high-frequency industrial power modules where layout simplicity and thermal performance are prioritized.
Availability
NP82N055KHE-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, renewable energy inverters, and electric vehicle onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for NP82N055KHE-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
NP82N055KHE-E1-AZ belongs to Renesas' high-current power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial-grade power conversion systems operating up to 175°C junction temperature.
FAQ
What is the maximum continuous drain current rating for NP82N055KHE-E1-AZ?
The NP82N055KHE-E1-AZ is rated for ±82 A DC drain current at case temperature TC = 25°C. This rating assumes adequate PCB copper area (≥1 in² 2-oz copper) under the drain fin. At elevated case temperatures, current must be derated per Figure 2 in the datasheet-e.g., to ~55 A at TC = 100°C. The NP82N055KHE-E1-AZ must not be operated beyond its Safe Operating Area (SOA) limits shown in Figure 3.
Does NP82N055KHE-E1-AZ include integrated gate protection?
Yes, the NP82N055KHE-E1-AZ integrates a gate-to-source protection diode rated for ±20 V, providing basic ESD immunity per human-body model. However, Renesas explicitly states that external protection circuitry is mandatory when voltage transients exceeding the rated gate-source voltage may occur. The NP82N055KHE-E1-AZ is not intended to withstand sustained overvoltage or lightning-induced surges without supplemental TVS or RC clamping networks.
What is the typical gate charge profile of NP82N055KHE-E1-AZ?
The NP82N055KHE-E1-AZ has a total gate charge (QG) of 21–32 nC at VDD = 44 V and ID = 32 A, with QGS = 6 nC and QGD = 8 nC. This low QGD/QG ratio results in a short Miller plateau, enabling fast, controllable turn-on and reduced risk of shoot-through in bridge configurations. The NP82N055KHE-E1-AZ gate drive should be sized for ≥2 A peak current to achieve specified td(on) and tf.
Can NP82N055KHE-E1-AZ be used in avalanche mode repeatedly?
No-NP82N055KHE-E1-AZ is characterized for single-pulse avalanche energy (EAS) only: 49 mJ at IAS = 26 A, with strict test conditions (Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V). Renesas does not specify repetitive avalanche ratings. Repeated avalanche stress degrades RDS(on) and threshold voltage over time. The NP82N055KHE-E1-AZ must be applied within its SOA or protected with active clamping to avoid reliance on avalanche capability.
What is the thermal resistance from channel to ambient for NP82N055KHE-E1-AZ?
The channel-to-ambient thermal resistance (Rth(ch-A)) for NP82N055KHE-E1-AZ is 125°C/W when mounted on a standard FR-4 PCB with minimal copper. With proper layout-including a 1-in² 2-oz copper pour connected to the drain fin-Rth(ch-A) improves to ≤40°C/W. The channel-to-case value is fixed at 2.27°C/W, measured directly from die to the exposed drain pad. These values define the NP82N055KHE-E1-AZ thermal design envelope for industrial applications.
NP82N055KHE-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
NP82N055KHE-E1-AZ FAQ
1.How can I place an order for NP82N055KHE-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for NP82N055KHE-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP82N055KHE-E1-AZ reliable?
The price and inventory of NP82N055KHE-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N055KHE-E1-AZ is usually 5 days.
3.What payment methods are accepted for NP82N055KHE-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N055KHE-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP82N055KHE-E1-AZ?
NP82N055KHE-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP82N055KHE-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP82N055KHE-E1-AZ?
For technical support, including NP82N055KHE-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N055KHE-E1-AZ requirements.
6.How does Aetrix verify that NP82N055KHE-E1-AZ is sourced from the original manufacturer or authorized distributors?
All NP82N055KHE-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N055KHE-E1-AZ meets industry standards.
7.What is the process for return or replacement of NP82N055KHE-E1-AZ?
All NP82N055KHE-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with NP82N055KHE-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP82N055KHE-E1-AZ part is unused and in its original packaging.
Return procedure for NP82N055KHE-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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