Renesas NP82N055NUG-S18-AY
- Part No.:
- NP82N055NUG-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
NP82N055NUG-S18-AY.pdf
- Description:
- MOSFET N-CH 55V 82A TO262
- Quantity:
- Payment:

- Shipping:

Inventory:350
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Product details
Overview
NP82N055NUG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-262 package, rated for 55 V VDSS, 82 A DC drain current, and 6.0 mΩ max RDS(on) at VGS = 10 V, designed for high-current automotive switching applications including motor control and DC-DC conversion.
For engineers reviewing the NP82N055NUG-S18-AY datasheet, NP82N055NUG-S18-AY pinout, NP82N055NUG-S18-AY application, or NP82N055NUG-S18-AY equivalent, key selection criteria include its AEC-Q101 qualification, low on-resistance under high-current conditions, thermal resistance of 1.05 °C/W (ch-to-case), and suitability for 48 V battery systems requiring robust avalanche capability (144 mJ).
Technical Context
This device employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while its 6400 pF typical input capacitance supports stable gate drive design without excessive Miller effect.
The integrated body diode exhibits 0.9–1.5 V forward voltage at 82 A and 42 ns reverse recovery time, enabling synchronous rectification and freewheeling operation in buck converters and H-bridge motor drives without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage compatible with 48 V nominal battery systems and transient overvoltage tolerance up to ISO 7637-2 Pulse 5a. |
| ID(DC) | ±82 A - Continuous current rating enables single-device use in high-power BLDC motor phase legs or industrial solenoid drivers. |
| RDS(on) max | 6.0 mΩ @ VGS = 10 V - Delivers ≤ 40 W conduction loss at 82 A, reducing heatsink requirements in space-constrained modules. |
| EAR | 144 mJ - Rated repetitive avalanche energy allows safe operation during inductive load switching without snubber circuits. |
| Rth(ch-C) | 1.05 °C/W - Enables direct mounting to cold plates for thermal management in automotive power inverters and onboard chargers. |
| QG | 106–160 nC - Gate charge supports efficient 100 kHz switching with moderate gate driver strength (e.g., TC4427 or similar). |
| AEC-Q101 | Qualified - Validated for automotive under-hood applications per stress test requirements including HTGB, HTRB, and temperature cycling. |
Pinout & Package
NP82N055NUG-S18-AY is housed in a TO-262 (MP-25SK) surface-mount-compatible through-hole package with isolated fin (Drain-connected tab) for mechanical mounting and thermal conduction. The case outline measures 13.7 mm × 10.0 mm × 4.45 mm (L × W × H), with 2.54 mm lead pitch and pure Sn plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives gate drive signal; requires ≥10 V for full enhancement; sensitive to ESD-must be handled with grounded tools. |
| 2 (Drain) | Main current path output | Connected internally to metal fin; electrically and thermally coupled to heatsink; must be isolated from PCB ground plane if floating topology used. |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive loop; layout must minimize inductance to suppress ringing during switching. |
| 4 (Fin / Drain) | Thermal & electrical drain connection | Exposed metal tab provides primary heat dissipation path; must be soldered or bolted to heatsink with thermal interface material. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 6.0 mΩ max at 10 V gate drive reduces conduction losses by >35% vs. legacy 80 A MOSFETs in same package. |
| Avalanche ruggedness | Rated for 38 A repetitive avalanche current and 144 mJ energy-enables reliable operation in unclamped inductive switching. |
| Automotive qualification | AEC-Q101 certified for under-hood use, including extended temperature cycling (−40°C to +175°C) and humidity testing. |
| Low QGD/QG ratio | 35 nC gate-to-drain charge relative to 106–160 nC total gate charge improves immunity to Miller-induced false turn-on. |
| Pb-free construction | RoHS-compliant pure Sn lead finish meets EU Directive 2011/65/EU and JESD201A Class 2A whisker resistance requirements. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-efficiency three-phase inverter driving brushless torque assist motor in passenger vehicles. IC Role / Device Role / Timing Role: Main switch in low-side leg of 3-phase bridge; handles peak currents up to 82 A with <100 ns switching transitions. Use Value: Low RDS(on) and 1.05 °C/W thermal resistance enable compact heatsink design while maintaining Tch < 150°C during continuous assist mode. | Use Scenario: Primary-side synchronous rectifier in bi-directional LLC resonant converter interfacing 12 V and 48 V battery domains. IC Role / Device Role / Timing Role: High-side switch operating at 200–300 kHz with zero-voltage switching; body diode conducts during dead-time. Use Value: 42 ns trr and 57 nC Qrr minimize reverse recovery loss and EMI generation during hard commutation events. |
| Commercial Vehicle Air Suspension Compressor | Industrial Motor Starter Module |
Use Scenario: PWM-controlled 24 V DC compressor motor in heavy-duty truck air suspension systems. IC Role / Device Role / Timing Role: Single high-current switch replacing mechanical relay; duty-cycled at 1–10 Hz with 100% load current. Use Value: ±328 A pulse rating and 175°C channel temperature limit ensure reliability during repeated stall-current surges and ambient temperatures up to 125°C. | Use Scenario: Solid-state replacement for contactor in 3 kW induction motor soft-start module for HVAC compressors. IC Role / Device Role / Timing Role: Inrush current limiter using controlled ramp-up via gate voltage slew rate; operates in linear region briefly during start. Use Value: 143 W power dissipation rating and 1.05 °C/W Rth(ch-C) allow safe linear-mode operation for ≤500 ms without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF8AG | 40 V VDSS, 220 A ID(DC), TO-220FP package, 1.2 mΩ RDS(on); lower voltage rating but higher current capacity. | Not suitable for 48 V systems due to 40 V rating; better for 24 V commercial vehicle loads. | Select only when system Vbus ≤ 28 V and peak current exceeds 150 A. |
| IXFH82N55X3 | 55 V VDSS, 82 A ID(DC), TO-247 package, 5.5 mΩ RDS(on); higher thermal resistance (0.55 °C/W ch-to-case) but superior SOA. | Requires larger PCB footprint and different mounting hardware; not drop-in compatible with TO-262 footprint. | Prefer when board-level thermal constraints permit TO-247 and enhanced safe operating area is critical. |
Compared with STL220N4LF8AG and IXFH82N55X3, NP82N055NUG-S18-AY offers optimal balance of 55 V rating, TO-262 mountability, AEC-Q101 compliance, and 6.0 mΩ on-resistance-making it uniquely suited for space-limited, thermally constrained automotive 48 V subsystems where pin-compatible upgrade paths are unavailable.
Availability
NP82N055NUG-S18-AY is available at Aetrix Electronics and suitable for automotive powertrain control, industrial motor drives, and 48 V energy storage systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for NP82N055NUG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.
The NP82N055NUG-S18-AY belongs to Renesas' high-current automotive MOSFET product line, engineered specifically for AEC-Q101-compliant switching in 12 V–48 V vehicle electrification systems including EPS, ADAS actuators, and mild hybrid converters.
FAQ
What is the maximum continuous drain current rating for NP82N055NUG-S18-AY?
The NP82N055NUG-S18-AY has a maximum continuous drain current (ID(DC)) rating of ±82 A at TC = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25°C per the datasheet's power dissipation curve. At TC = 100°C, the usable ID(DC) drops to approximately ±55 A. The NP82N055NUG-S18-AY must be mounted to a heatsink with thermal resistance ≤ 1.05 °C/W to sustain full current capability.
Is NP82N055NUG-S18-AY qualified for automotive applications?
Yes, NP82N055NUG-S18-AY is AEC-Q101 qualified and explicitly designed for automotive use. It meets all stress tests required for under-hood deployment-including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling, and unbiased highly accelerated stress testing (uHAST). The NP82N055NUG-S18-AY is rated for operation from −40°C to +175°C channel temperature and is approved for use in EPS, transmission control, and 48 V mild hybrid systems.
What is the gate threshold voltage range for NP82N055NUG-S18-AY?
The gate threshold voltage (VGS(th)) for NP82N055NUG-S18-AY is specified from 2.0 V to 4.0 V at ID = 250 μA and VDS = VGS. This non-logic-level range means the NP82N055NUG-S18-AY requires a minimum 10 V gate drive for full enhancement and low RDS(on). The NP82N055NUG-S18-AY is not compatible with 3.3 V or 5 V logic-level drivers without level-shifting circuitry.
Does NP82N055NUG-S18-AY have an integrated body diode, and what are its characteristics?
Yes, NP82N055NUG-S18-AY includes an integral body diode with forward voltage (VF(S-D)) of 0.9–1.5 V at IF = 82 A and VGS = 0 V. Its reverse recovery time (trr) is 42 ns and reverse recovery charge (Qrr) is 57 nC under specified test conditions (di/dt = 100 A/μs). These parameters make the NP82N055NUG-S18-AY suitable for synchronous rectification and freewheeling in hard-switched converters where fast recovery minimizes switching loss.
What is the thermal resistance from channel to case for NP82N055NUG-S18-AY?
The channel-to-case thermal resistance (Rth(ch-C)) for NP82N055NUG-S18-AY is 1.05 °C/W, measured under JEDEC JESD51-14 conditions. This value reflects the thermal path from silicon junction to the exposed metal fin (Drain tab), and is critical for calculating maximum allowable power dissipation when mounted to a heatsink. The NP82N055NUG-S18-AY achieves this low Rth via optimized die attach and TO-262 package construction, enabling high-power density designs without forced air cooling.
NP82N055NUG-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 143W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
NP82N055NUG-S18-AY FAQ
1.How can I place an order for NP82N055NUG-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP82N055NUG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP82N055NUG-S18-AY reliable?
The price and inventory of NP82N055NUG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N055NUG-S18-AY is usually 5 days.
3.What payment methods are accepted for NP82N055NUG-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N055NUG-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP82N055NUG-S18-AY?
NP82N055NUG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP82N055NUG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP82N055NUG-S18-AY?
For technical support, including NP82N055NUG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N055NUG-S18-AY requirements.
6.How does Aetrix verify that NP82N055NUG-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP82N055NUG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N055NUG-S18-AY meets industry standards.
7.What is the process for return or replacement of NP82N055NUG-S18-AY?
All NP82N055NUG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP82N055NUG-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP82N055NUG-S18-AY part is unused and in its original packaging.
Return procedure for NP82N055NUG-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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