Renesas NP82N055PUG-E1-AY

Overview

NP82N055PUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial power supply synchronous rectification. It delivers R_DS(on) = 5.2 mΩ max at V_GS = 10 V and I_D = 41 A, supports 82 A continuous drain current (T_C = 25°C), and operates with 175°C channel temperature rating.

For engineers reviewing the NP82N055PUG-E1-AY datasheet, NP82N055PUG-E1-AY pinout, NP82N055PUG-E1-AY application, or NP82N055PUG-E1-AY equivalent, key selection criteria include its low conduction loss in high-efficiency 48 V input systems, avalanche ruggedness (E_AR = 144 mJ), TO-263 thermal performance (R_th(ch-C) = 1.05°C/W), and gate charge profile (Q_G = 160 nC max) for optimized PWM driver sizing.

Technical Context

This MOSFET uses planar V-groove silicon process to achieve low R_DS(on) while maintaining robust avalanche capability. Its body diode exhibits t_rr = 42 ns and Q_rr = 57 nC under 100 A/µs di/dt, enabling efficient hard-switched flyback and LLC resonant converter operation without external snubbers.

The device features a Kelvin-source pin configuration in TO-263 (MP-25ZP) package with dedicated source terminal (Pin 3) and drain-fin tab (Pin 4), supporting precise gate drive referencing and minimizing common-source inductance in high-frequency (>100 kHz) switching topologies.

Key Specifications

Pinout & Package

NP82N055PUG-E1-AY is housed in TO-263 (MP-25ZP) surface-mount package with exposed drain-fin thermal pad (Pin 4) and isolated gate (Pin 1), drain (Pin 2), and source (Pin 3) terminals. The package supports >200 W thermal dissipation when mounted on 10 cm² 2-oz copper with thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFN82N55P and STP82NF55, NP82N055PUG-E1-AY provides superior thermal performance in surface-mount designs, faster switching via Kelvin source, and extended channel temperature margin-making it optimal for space-constrained, high-frequency industrial power stages.

Availability

NP82N055PUG-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and solar microinverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NP82N055PUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog power devices, and automotive SoCs, with over 40 years of power MOSFET innovation.

The NP82N055PUG-E1-AY belongs to Renesas' high-current logic-level power MOSFET family, engineered for efficiency-critical industrial and computing power conversion where low R_DS(on), ruggedness, and thermal reliability are mandatory.

FAQ

What is the maximum continuous drain current rating for NP82N055PUG-E1-AY?

The NP82N055PUG-E1-AY is rated for ±82 A DC drain current at case temperature T_C = 25°C. This rating assumes proper PCB thermal management using the TO-263 drain-fin pad. At higher case temperatures, current must be derated per the datasheet's "Total Power Dissipation vs. Case Temperature" curve, reaching zero at T_C = 175°C. The NP82N055PUG-E1-AY maintains safe operation up to 175°C channel temperature.

Does NP82N055PUG-E1-AY support logic-level gate drive?

Yes, NP82N055PUG-E1-AY is fully compatible with 10 V logic-level gate drive, with V_GS(th) specified from 2.0 V to 4.0 V and R_DS(on) guaranteed at V_GS = 10 V. It does not require 12–15 V gate drive for full enhancement, simplifying compatibility with standard microcontroller GPIOs and low-voltage gate drivers. The NP82N055PUG-E1-AY achieves its 5.2 mΩ R_DS(on) max only at V_GS ≥ 10 V.

What is the avalanche energy rating of NP82N055PUG-E1-AY?

The NP82N055PUG-E1-AY is rated for 144 mJ repetitive avalanche energy (E_AR) under conditions of T_ch ≤ 150°C, V_DD = 28 V, R_G = 25 Ω, and V_GS transitioning from 20 V to 0 V. This validated avalanche capability ensures reliable operation in inductive load switching, such as motor phase commutation and relay driving, without external clamping circuits. The NP82N055PUG-E1-AY also supports 38 A repetitive avalanche current (I_AR).

How is thermal performance characterized for NP82N055PUG-E1-AY?

NP82N055PUG-E1-AY specifies two key thermal resistances: R_th(ch-C) = 1.05°C/W (channel-to-case) and R_th(ch-A) = 83.3°C/W (channel-to-ambient). The low R_th(ch-C) enables high-power dissipation when mounted on a heatsink or copper baseplate, while the R_th(ch-A) value reflects performance on a standard JEDEC test board. For real-world designs, thermal simulation must account for the TO-263 drain-fin pad soldering quality and PCB copper area. The NP82N055PUG-E1-AY's 175°C channel rating allows full utilization of this thermal headroom.

Is NP82N055PUG-E1-AY RoHS compliant and halogen-free?

Yes, NP82N055PUG-E1-AY complies with EU RoHS Directive 2011/65/EU and is halogen-free per JESD201A Class 1. Renesas Electronics confirms environmental compliance through material declarations and third-party testing. The "E1-AY" suffix denotes tape-and-reel packaging with RoHS-compliant finish. No lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances exceed RoHS threshold limits in the NP82N055PUG-E1-AY device or its TO-263 package.