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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP82N06NLG-S18-AY

Name: NP82N06NLG-S18-AY
Brand: Renesas
SKU: NP82N06NLG-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP82N06NLG-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: NP82N06NLG-S18-AY.pdf

Description:: MOSFET N-CH 60V 82A TO262

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Product details

Overview

NP82N06NLG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-262 (MP-25SK) package, rated for 60 V V_DSS, ±82 A DC drain current, and 7.4 mΩ R_DS(on) at V_GS = 10 V. It features logic-level gate drive compatibility (V_GS(th) = 1.5–2.5 V), built-in gate protection diode, and AEC-Q101 qualification for automotive use. It serves as a high-current switching element in DC-DC converters and motor control inverters.

For engineers reviewing the NP82N06NLG-S18-AY datasheet, NP82N06NLG-S18-AY pinout, NP82N06NLG-S18-AY application, or NP82N06NLG-S18-AY equivalent, key selection criteria include its low R_DS(on) at 5 V gate drive (9.7 mΩ max), 143 W power dissipation at T_C = 25°C, repetitive avalanche capability (37 A, 137 mJ), and thermal resistance of 1.05°C/W (ch-to-case).

Technical Context

This MOSFET employs a planar silicon process optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.5–2.5 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting. The integrated gate protection diode guards against ESD but does not replace external transient suppression in high-noise environments.

The device's safe operating area (SOA) is defined by R_DS(on)-limited conduction, secondary breakdown, and power dissipation constraints. Its C_iss = 5700 pF (typ.) and Q_G = 106 nC (typ.) support efficient gate driving at switching frequencies up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with margin.
I_D(DC)	±82 A - Continuous drain current at T_C = 25°C; requires heatsinking above ~40 A in ambient air.
R_DS(on)1	7.4 mΩ max @ V_GS = 10 V, I_D = 41 A - Enables <1.5 W conduction loss at 40 A, reducing thermal load.
R_DS(on)2	9.7 mΩ max @ V_GS = 5 V, I_D = 41 A - Supports direct drive from standard microcontroller GPIOs.
T_ch max	175°C - Maximum channel temperature; allows operation in under-hood automotive environments.
R_th(ch-C)	1.05°C/W - Low thermal resistance from channel to case; mandates mechanical mounting to heatsink with thermal interface material.
AEC-Q101	Qualified - Validated for automotive applications including engine control, EPS, and HVAC blower drives.

Pinout & Package

NP82N06NLG-S18-AY uses the TO-262 (MP-25SK) package - a surface-mount compatible variant of TO-220 with isolated tab, 1.8 g mass, and 13.7 mm lead pitch. The metal tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control electrode	Receives gate drive signal; requires <106 nC total charge for full turn-on; sensitive to ESD (protected internally but not sufficient for system-level transients).
2. Drain	Main current path (high-side)	Connected to power rail or inductive load; electrically tied to metal tab - must be isolated from PCB ground unless drain-referenced topology is used.
3. Source	Main current return path	Serves as reference node for gate drive; carries full load current; layout must minimize inductance to reduce switching overshoot.
4. Fin (Drain)	Thermal & electrical extension	Exposed metal tab - primary heat transfer path to heatsink; no electrical isolation; must be mounted with dielectric pad if heatsink is grounded.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 5 V - eliminates need for gate driver ICs in many 5 V MCU-based designs.
Built-in gate protection diode	ESD protection per HBM Class 2 (≥2 kV); reduces external component count but does not replace TVS for system-level surge immunity.
Super low R_DS(on)	7.4 mΩ max at 10 V drive - cuts conduction losses by >30% vs. comparable 60 V MOSFETs from 2007–2009 era.
Repetitive avalanche rating	37 A / 137 mJ - enables robustness in inductive switching without snubbers in fault-limited applications like wiper motor drivers.
Pb-free plating	Pure Sn (Tin) finish - compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 marking.

Applications

Automotive Blower Motor Control	Industrial DC-DC Converter Primary Switch
Use Scenario: High-reliability speed control of HVAC blower motors in passenger vehicles, operating continuously at ambient temperatures up to 105°C. IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, driven by PWM from an automotive-grade MCU. Use Value: AEC-Q101 qualification and 175°C channel rating ensure long-term reliability; low R_DS(on) minimizes power loss and cabin heat generation.	Use Scenario: Primary-side switching element in 48 V input, 12 V output isolated flyback or forward converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Main power switch handling up to 82 A peak current during transient loads, switching at 100–250 kHz. Use Value: 1.05°C/W thermal resistance enables compact heatsink design; 5700 pF C_iss supports efficient gate driving with low-power drivers.
Electric Power Steering (EPS) Assist Driver	Commercial Lighting LED Driver Stage
Use Scenario: Torque-assist motor phase switch in 12 V or 48 V EPS systems, subject to frequent start-stop cycles and vibration. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, controlled via isolated gate driver with active Miller clamp. Use Value: Repetitive avalanche rating (37 A) tolerates inductive kickback during sudden torque reversal; TO-262 mechanical robustness withstands automotive shock/vibe.	Use Scenario: High-current dimming switch in constant-current LED drivers for street lighting (100–200 W output). IC Role / Device Role / Timing Role: Synchronous rectifier or main buck switch in high-efficiency LED driver, operating at 50–150 kHz. Use Value: 9.7 mΩ R_DS(on) at 5 V gate drive enables direct MCU PWM control; low Q_G (106 nC) reduces gate driver power consumption.

Automotive Blower Motor Control

Industrial DC-DC Converter Primary Switch

Use Scenario: High-reliability speed control of HVAC blower motors in passenger vehicles, operating continuously at ambient temperatures up to 105°C.

IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, driven by PWM from an automotive-grade MCU.

Use Value: AEC-Q101 qualification and 175°C channel rating ensure long-term reliability; low R_DS(on) minimizes power loss and cabin heat generation.

Use Scenario: Primary-side switching element in 48 V input, 12 V output isolated flyback or forward converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Main power switch handling up to 82 A peak current during transient loads, switching at 100–250 kHz.

Use Value: 1.05°C/W thermal resistance enables compact heatsink design; 5700 pF C_iss supports efficient gate driving with low-power drivers.

Electric Power Steering (EPS) Assist Driver

Commercial Lighting LED Driver Stage

Use Scenario: Torque-assist motor phase switch in 12 V or 48 V EPS systems, subject to frequent start-stop cycles and vibration.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, controlled via isolated gate driver with active Miller clamp.

Use Value: Repetitive avalanche rating (37 A) tolerates inductive kickback during sudden torque reversal; TO-262 mechanical robustness withstands automotive shock/vibe.

Use Scenario: High-current dimming switch in constant-current LED drivers for street lighting (100–200 W output).

IC Role / Device Role / Timing Role: Synchronous rectifier or main buck switch in high-efficiency LED driver, operating at 50–150 kHz.

Use Value: 9.7 mΩ R_DS(on) at 5 V gate drive enables direct MCU PWM control; low Q_G (106 nC) reduces gate driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP82NF55-08	60 V V_DSS, 80 A I_D(DC), 8.0 mΩ R_DS(on) @ 10 V, TO-220 package, no AEC-Q101 certification	Non-automotive grade; lacks qualified test reports for temperature cycling and humidity bias life	Select when cost sensitivity outweighs automotive qualification requirements and TO-220 mounting is acceptable.
IRF1404ZPBF	40 V V_DSS, 180 A I_D(DC), 4.7 mΩ R_DS(on) @ 10 V, TO-220, AEC-Q101 not claimed	Lower voltage rating limits use to ≤32 V systems; higher current rating increases gate charge (191 nC) and layout complexity	Choose only for non-automotive 24–32 V applications where lower R_DS(on) justifies reduced voltage margin and larger gate drive demand.

Compared with STP82NF55-08 and IRF1404ZPBF, NP82N06NLG-S18-AY uniquely combines AEC-Q101 qualification, 5 V logic-level drive, and TO-262 packaging - making it the only option among the three validated for under-hood automotive deployment with minimal gate drive overhead.

Availability

NP82N06NLG-S18-AY is available at Aetrix Electronics and suitable for automotive blower control, industrial DC-DC converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for NP82N06NLG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.

NP82N06NLG-S18-AY belongs to Renesas' legacy power MOSFET product line designed specifically for high-current, high-reliability automotive and industrial switching - emphasizing ruggedness, low R_DS(on), and qualification-compliant manufacturing.

FAQ

What is the maximum continuous drain current rating for NP82N06NLG-S18-AY?

The NP82N06NLG-S18-AY has a maximum continuous drain current I_D(DC) of ±82 A at case temperature T_C = 25°C. This rating assumes proper heatsinking; derating applies above 25°C - e.g., ~55 A at T_C = 100°C per the datasheet's derating curve. Actual usable current depends on PCB layout, thermal interface, and ambient conditions.

Is NP82N06NLG-S18-AY suitable for 5 V logic-level gate drive?

Yes, NP82N06NLG-S18-AY is explicitly specified as a logic-level MOSFET with V_GS(th) = 1.5–2.5 V and R_DS(on)2 = 9.7 mΩ max at V_GS = 5 V and I_D = 41 A. This enables direct drive from standard 5 V microcontrollers without external level shifters or gate drivers in many medium-frequency switching applications.

Does NP82N06NLG-S18-AY have automotive qualification?

Yes, NP82N06NLG-S18-AY is AEC-Q101 qualified, as confirmed in its official Renesas datasheet (D19802EJ1V0DS00). This qualification covers stress tests including temperature cycling, humidity bias HAST, and high-temperature gate bias - validating its suitability for automotive powertrain and chassis applications.

What package type does NP82N06NLG-S18-AY use, and is the drain electrically connected to the tab?

NP82N06NLG-S18-AY uses the TO-262 (MP-25SK) package. The metal tab (Pin 4, labeled "Fin") is electrically connected to the drain terminal (Pin 2), as shown in the equivalent circuit and package drawing. This requires careful isolation planning when mounting to a heatsink, especially in grounded-heatsink configurations.

What is the total gate charge (Q_G) specification for NP82N06NLG-S18-AY, and why does it matter?

NP82N06NLG-S18-AY has a typical total gate charge Q_G of 106 nC (max 160 nC) at V_DD = 48 V and I_D = 82 A. This value determines gate driver sizing and switching loss: lower Q_G reduces required drive current and dynamic losses, enabling efficient operation at higher frequencies (e.g., >100 kHz) with modest gate drivers.

NP82N06NLG-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 143W (Tc)

Operating Temperature:: 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

NP82N06NLG-S18-AY FAQ

1.How can I place an order for NP82N06NLG-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP82N06NLG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP82N06NLG-S18-AY reliable?

The price and inventory of NP82N06NLG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N06NLG-S18-AY is usually 5 days.

3.What payment methods are accepted for NP82N06NLG-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N06NLG-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP82N06NLG-S18-AY?

NP82N06NLG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP82N06NLG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP82N06NLG-S18-AY?

For technical support, including NP82N06NLG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N06NLG-S18-AY requirements.

6.How does Aetrix verify that NP82N06NLG-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP82N06NLG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N06NLG-S18-AY meets industry standards.

7.What is the process for return or replacement of NP82N06NLG-S18-AY?

All NP82N06NLG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP82N06NLG-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP82N06NLG-S18-AY part is unused and in its original packaging.

Return procedure for NP82N06NLG-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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