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Renesas NP88N055KHE-E1-AY
- Part No.:
- NP88N055KHE-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP88N055KHE-E1-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,600
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Product details
Overview
NP88N055KHE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial power supply synchronous rectification. It delivers 88 A DC drain current at 25°C case temperature, features 5.3 mΩ max RDS(on) at VGS = 10 V, supports ±20 V gate-source voltage, and operates with 175°C channel temperature rating.
For engineers reviewing the NP88N055KHE-E1-AY datasheet, NP88N055KHE-E1-AY pinout, NP88N055KHE-E1-AY application, or NP88N055KHE-E1-AY equivalent, this page provides verified package mapping (TO-263/MP-25ZK), validated thermal resistance (0.52°C/W ch-to-case), confirmed avalanche capability (422 mJ at Tch = 25°C), and real-world switching parameters including 130–200 nC total gate charge and 62 ns reverse recovery time.
Technical Context
This device employs a planar silicon process optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its 55 V VDSS rating targets 48 V bus systems, while the built-in gate protection diode mitigates ESD stress during handling and assembly.
The MOSFET exhibits strong transconductance (30–60 S) and low output capacitance (1100–1700 pF Coss), enabling fast turn-on/turn-off transitions-td(on) 42–93 ns, td(off) 120–240 ns-with 1 Ω gate resistance under 28 V VDD and 44 A load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Supports 48 V nominal input rails with 15% margin for transient overvoltage |
| RDS(on) max | 5.3 mΩ at VGS = 10 V, ID = 44 A - Enables <1.0 W conduction loss at 44 A, critical for high-efficiency power stages |
| ID(DC) | ±88 A at TC = 25°C - Matches high-power motor phase or PSU output stage current requirements |
| EAS | 422 mJ at Tch = 25°C - Withstands single-pulse inductive energy without failure in hard-switched topologies |
| Rth(ch-C) | 0.52°C/W - Allows 288 W power dissipation at 25°C case temperature, supporting forced-air or heatsink-cooled designs |
| QG | 130–200 nC - Determines gate driver current demand; requires ≥2 A peak drive for 100 ns switching |
| trr | 62 ns - Limits body diode reverse recovery loss in synchronous rectifier or half-bridge freewheeling operation |
Pinout & Package
NP88N055KHE-E1-AY is housed in a TO-263 (MP-25ZK) surface-mount package weighing ~1.5 g, featuring a thermally enhanced exposed drain tab for direct PCB copper thermal spreading. The 4-pin configuration integrates gate, drain, source, and fin (drain-connected thermal pad) terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; protected by integrated Zener diode to ±20 V |
| 2 (Drain) | Main current path input | Connected to high-side switch node or bus rail; electrically tied to exposed metal tab |
| 3 (Source) | Main current path return | Serves as reference for gate drive and current sensing; common node for low-side control |
| 4 (Fin / Drain Tab) | Thermal & electrical drain extension | Must be soldered to large PCB copper area for thermal management; carries full drain current |
Key Features
| Feature | Design Value |
|---|---|
| 175°C channel temperature rating | Enables operation in sealed enclosures or high-ambient environments without derating below 88 A DC |
| Super low RDS(on) | 4.2–5.3 mΩ range minimizes I²R losses in high-current paths, improving efficiency >95% in 48 V converters |
| Built-in gate protection diode | Zener-clamped gate-source structure prevents ESD damage during PCB assembly and handling |
| Low input capacitance | 7600 pF typical Ciss reduces gate drive power and improves switching speed vs. comparable 80 A MOSFETs |
| Body diode VF(S-D) | 1.0 V at 88 A enables usable freewheeling in non-synchronous configurations without external diode |
Applications
| Industrial Motor Drive | Server PSU Primary Switch |
|---|---|
|
Use Scenario: High-power BLDC motor inverter leg with 48 V bus and 60 A peak phase current. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase bridge; conducts during PWM on-time, blocks reverse current during off-time. Use Value: 5.3 mΩ RDS(on) limits conduction loss to ≤1.9 W at 60 A, reducing heatsink size by 35% versus 8 mΩ alternatives. |
Use Scenario: Primary-side switching transistor in 1 kW telecom rectifier operating at 100 kHz. IC Role / Device Role / Timing Role: Hard-switched power FET in forward or LLC resonant topology; handles full input current during active duty cycle. Use Value: 422 mJ avalanche energy rating ensures reliability during output short-circuit events without snubber redesign. |
| Automotive DC-DC Converter | UPS Inverter Stage |
|
Use Scenario: 12 V to 48 V bidirectional boost converter in 48 V mild-hybrid vehicle architecture. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; body diode conducts during dead-time, MOSFET conducts during active period. Use Value: 62 ns trr and 120 nC Qrr minimize reverse recovery loss and EMI generation during commutation. |
Use Scenario: Half-bridge output stage in 3 kVA online UPS delivering clean 230 V AC from 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switching element controlling current flow into transformer primary winding. Use Value: 0.52°C/W Rth(ch-C) allows sustained 88 A operation with standard 100 cm² heatsink, eliminating need for liquid cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH88N055P | Higher RDS(on) (6.2 mΩ max), TO-247 package, no integrated gate protection diode | Requires external gate clamp; better suited for through-hole prototyping or legacy board reuse | Select when TO-247 mechanical fit is mandatory and gate drive circuit includes discrete protection |
| STL220N5LF8AG | Lower VDSS (40 V), 3.5 mΩ RDS(on), PowerFLAT 8x8 package, no fin terminal | Limited to 36 V systems; lacks exposed drain tab, requiring thicker copper for thermal performance | Choose for space-constrained 40 V applications where footprint reduction outweighs thermal trade-offs |
Compared with IXFH88N055P and STL220N5LF8AG, NP88N055KHE-E1-AY uniquely combines TO-263 thermal performance, integrated gate protection, and 55 V/88 A rating-making it optimal for production-grade 48 V industrial power stages where reliability, manufacturability, and thermal headroom are prioritized over minimal RDS(on).
Availability
NP88N055KHE-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for NP88N055KHE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP88N055KHE-E1-AY belongs to Renesas' legacy high-current power MOSFET family targeting high-efficiency, high-reliability switching in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for NP88N055KHE-E1-AY?
NP88N055KHE-E1-AY is rated for ±88 A DC drain current at TC = 25°C, calculated based on maximum allowable channel temperature of 175°C. At higher case temperatures, current must be derated per Figure 1 in the datasheet-e.g., 60 A at TC = 100°C. This rating assumes proper PCB copper area for thermal conduction from the exposed drain tab.
Does NP88N055KHE-E1-AY include integrated gate protection?
Yes, NP88N055KHE-E1-AY incorporates a built-in gate-to-source Zener diode for ESD protection, rated for ±20 V gate-source voltage. This protection is effective during handling and reflow but does not replace external gate clamping in circuits subject to voltage transients exceeding ±20 V-such as those with inductive loads or poor layout.
What is the thermal resistance from channel to case for NP88N055KHE-E1-AY?
The channel-to-case thermal resistance (Rth(ch-C)) of NP88N055KHE-E1-AY is 0.52°C/W, measured under standard test conditions. This value assumes full soldering of the exposed drain tab (Pin 4) to ≥10 cm² of 2 oz copper on the PCB. Insufficient thermal pad area or voided solder will increase effective thermal resistance and reduce safe operating current.
Can NP88N055KHE-E1-AY be used in avalanche mode?
Yes, NP88N055KHE-E1-AY is characterized for single-pulse avalanche operation with EAS = 422 mJ at Tch = 25°C and IAS = 65 A. This capability supports robustness in inductive switching applications like motor drives, but repetitive avalanche is not guaranteed. Designers must verify energy per event stays within the derated curve in Figure 4 of the datasheet.
What is the gate charge specification for NP88N055KHE-E1-AY?
NP88N055KHE-E1-AY has a total gate charge (QG) of 130–200 nC, measured at VDD = 44 V, VGS = 10 V, and ID = 88 A. Gate-to-source charge (QGS) is 31 nC and gate-to-drain charge (QGD) is 49 nC. These values determine required gate driver peak current-e.g., 2 A drive achieves ~100 ns turn-on with 100 nC QG.
NP88N055KHE-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 88A
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 288W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-3
NP88N055KHE-E1-AY FAQ
1.How can I place an order for NP88N055KHE-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP88N055KHE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP88N055KHE-E1-AY reliable?
The price and inventory of NP88N055KHE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP88N055KHE-E1-AY is usually 5 days.
3.What payment methods are accepted for NP88N055KHE-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP88N055KHE-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP88N055KHE-E1-AY?
NP88N055KHE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP88N055KHE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP88N055KHE-E1-AY?
For technical support, including NP88N055KHE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP88N055KHE-E1-AY requirements.
6.How does Aetrix verify that NP88N055KHE-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP88N055KHE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP88N055KHE-E1-AY meets industry standards.
7.What is the process for return or replacement of NP88N055KHE-E1-AY?
All NP88N055KHE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP88N055KHE-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP88N055KHE-E1-AY part is unused and in its original packaging.
Return procedure for NP88N055KHE-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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