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Renesas NP88N055MHE-S18-AY
- Part No.:
- NP88N055MHE-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
NP88N055MHE-S18-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,700
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Product details
Overview
NP88N055MHE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial SMPS applications. It delivers 88 A continuous drain current at TC = 25°C, features a maximum RDS(on) of 5.3 mΩ at VGS = 10 V and ID = 44 A, and supports 55 V drain-source breakdown voltage with ±20 V gate-source rating.
For engineers reviewing the NP88N055MHE-S18-AY datasheet, NP88N055MHE-S18-AY pinout, NP88N055MHE-S18-AY application, or NP88N055MHE-S18-AY equivalent, key selection criteria include its TO-220 (MP-25K) package thermal performance (Rth(ch-C) = 0.52 °C/W), 175°C channel temperature rating, avalanche energy capability (422 mJ at IAS = 65 A), and built-in gate protection diode - all critical for robust high-power switching design.
Technical Context
This device employs a trench-gate vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its forward transfer admittance |yfs| ranges from 30 to 60 S at VDS = 10 V and ID = 44 A, indicating strong transconductance for precise gate drive control.
The MOSFET integrates a monolithic gate protection diode between gate and source, and exhibits specified avalanche ruggedness under single-pulse conditions (IAS = 65 A, EAS = 422 mJ). Switching parameters - including td(on) = 42–93 ns, tr = 26–66 ns, td(off) = 120–240 ns, and tf = 32–81 ns - are characterized at VDD = 28 V, ID = 44 A, VGS = 10 V, and RG = 1 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage in off-state; defines usable input voltage range in buck/boost converters up to ~45 V nominal bus. |
| ID(DC) | ±88 A at TC = 25°C - Continuous current handling capacity when mounted on heatsink; enables high-power motor phase or SMPS output stage designs. |
| RDS(on) MAX | 5.3 mΩ at VGS = 10 V, ID = 44 A - Low conduction loss yields <0.9 W conduction loss at 44 A, reducing thermal stress and improving efficiency. |
| Tch MAX | 175°C - Enables operation in high-ambient industrial environments without derating below full current rating. |
| Rth(ch-C) | 0.52 °C/W - Confirms efficient heat transfer from silicon die to case; allows accurate junction temperature estimation using measured case temperature. |
| EAS | 422 mJ at IAS = 65 A - Specifies single-pulse avalanche energy absorption capability, supporting reliable operation during inductive load turn-off transients. |
| Ciss TYP | 7600 pF - Input capacitance value directly impacts gate drive power requirement and switching speed; informs gate driver selection (e.g., peak current ≥2 A). |
Pinout & Package
NP88N055MHE-S18-AY is housed in a TO-220 (MP-25K) package with 3 leads and an exposed drain-fin tab for thermal mounting. The package weighs typ. 1.9 g and uses pure Sn (tin) lead plating per RoHS compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≥10 V for full enhancement; protected by internal Zener diode to ±20 V. |
| 2 (Drain) | Main current path (high-side) | Connected to high-voltage rail; electrically tied to metal tab - must be isolated from heatsink unless system ground referenced. |
| 3 (Source) | Current return path / reference node | Serves as local ground reference for gate drive; carries full load current; layout must minimize inductance to reduce switching overshoot. |
| Tab (Fin) | Drain terminal extension | Exposed metal surface providing low-thermal-resistance path to heatsink; electrically identical to Pin 2 (Drain). |
Key Features
| Feature | Design Value |
|---|---|
| Channel temperature rating | 175°C - Enables sustained operation in enclosed industrial enclosures or near heat sources without forced air cooling. |
| Super low RDS(on) | 5.3 mΩ max - Reduces I²R losses by >30% vs. comparable 80 A MOSFETs, lowering thermal design burden and improving system efficiency. |
| Built-in gate protection diode | Integrated Zener between Gate and Source - Eliminates need for external TVS in most gate drive circuits, simplifying layout and reducing BOM count. |
| Avalanche ruggedness | 422 mJ single-pulse energy - Allows safe clamping of inductive kickback in relay drivers or solenoid controls without external snubbers. |
| Low input capacitance | 7600 pF typical - Enables faster switching with lower gate drive power, reducing driver IC cost and PCB area in high-frequency SMPS. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for factory automation PLC power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–200 kHz with hard commutation. Use Value: 5.3 mΩ RDS(on) limits conduction loss to <0.9 W at 44 A, enabling compact heatsink design while maintaining >94% efficiency at full load. |
Use Scenario: Upper-leg switch in three-phase inverter driving 3 kW BLDC motor in HVAC compressors. IC Role / Device Role / Timing Role: High-current, high-reliability power switch in 6-step commutation with 10–20 kHz PWM. Use Value: 175°C channel rating and 422 mJ avalanche energy ensure survival during motor stall or short-circuit events without external protection. |
| Uninterruptible Power Supplies | High-Current Battery Protection |
Use Scenario: Bidirectional DC bus switch in online UPS inverters managing 24–48 V battery banks and AC line synchronization. IC Role / Device Role / Timing Role: Fast-turning, low-loss main power switch handling surge currents up to 352 A pulse-rated. Use Value: 352 A pulse rating and 0.52 °C/W Rth(ch-C) allow brief overload handling during grid transition without thermal runaway. |
Use Scenario: Main disconnect FET in 48 V lithium-ion battery pack protection circuit for material handling equipment. IC Role / Device Role / Timing Role: High-reliability load switch with overcurrent and short-circuit interrupt capability. Use Value: Built-in gate protection diode and robust SOA enable direct integration with analog current-sense amplifiers and comparator-based shutdown logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH88N055P | Higher RDS(on) (6.5 mΩ max), TO-247 package, no integrated gate protection diode | Requires external gate clamp; better suited for discrete driver + heatsink assemblies where layout space permits larger package | Select if higher avalanche rating (EAS = 620 mJ) is prioritized over gate protection integration. |
| STP88N55 | Same RDS(on) spec (5.3 mΩ), but rated only to 150°C channel temperature and lacks published avalanche data | Not recommended for designs requiring guaranteed single-pulse avalanche operation or extended high-temp ambient use | Choose only for cost-sensitive consumer-grade applications where 175°C rating and avalanche validation are non-critical. |
Compared with IXFH88N055P and STP88N55, NP88N055MHE-S18-AY uniquely combines 175°C channel rating, integrated gate protection, and validated 422 mJ avalanche energy in a TO-220 footprint - making it optimal for space-constrained industrial systems demanding both thermal resilience and transient robustness.
Availability
NP88N055MHE-S18-AY is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for NP88N055MHE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP88N055MHE-S18-AY belongs to Renesas' legacy high-current power MOSFET product line, engineered specifically for ruggedized industrial switching applications where thermal stability, avalanche tolerance, and gate robustness are mandatory design requirements.
FAQ
What is the maximum continuous drain current rating for NP88N055MHE-S18-AY?
NP88N055MHE-S18-AY is rated for ±88 A continuous drain current at case temperature TC = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the Rth(ch-C) = 0.52 °C/W thermal resistance. At TC = 100°C, the usable ID(DC) drops to approximately 55 A.
Does NP88N055MHE-S18-AY include integrated gate protection?
Yes, NP88N055MHE-S18-AY incorporates a monolithic gate-to-source Zener diode for ESD and overvoltage protection, rated to ±20 V. This eliminates the need for an external gate protection TVS in most standard gate drive configurations, though external clamping remains advisable in high-noise industrial environments.
What is the avalanche energy rating of NP88N055MHE-S18-AY and under what conditions is it specified?
NP88N055MHE-S18-AY is specified for 422 mJ single-pulse avalanche energy at IAS = 65 A, with starting channel temperature Tch = 25°C, VDD = 28 V, and RG = 25 Ω. This rating is validated per Test Circuit 1 in the datasheet and applies only to non-repetitive transient events.
Which package type does NP88N055MHE-S18-AY use and what are its thermal characteristics?
NP88N055MHE-S18-AY uses the TO-220 (MP-25K) package with pure Sn lead plating. Its channel-to-case thermal resistance is 0.52 °C/W, and channel-to-ambient is 83.3 °C/W. The metal tab is electrically connected to the Drain (Pin 2), requiring electrical isolation from the heatsink unless system grounding permits.
Is NP88N055MHE-S18-AY suitable for automotive applications?
NP88N055MHE-S18-AY is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, industrial robots, and office equipment - not for automotive safety-critical systems. It lacks AEC-Q101 qualification and is not recommended for under-hood or ADAS applications without additional system-level validation.
NP88N055MHE-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
NP88N055MHE-S18-AY FAQ
1.How can I place an order for NP88N055MHE-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP88N055MHE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP88N055MHE-S18-AY reliable?
The price and inventory of NP88N055MHE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP88N055MHE-S18-AY is usually 5 days.
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Once your NP88N055MHE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP88N055MHE-S18-AY?
For technical support, including NP88N055MHE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP88N055MHE-S18-AY requirements.
6.How does Aetrix verify that NP88N055MHE-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP88N055MHE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP88N055MHE-S18-AY meets industry standards.
7.What is the process for return or replacement of NP88N055MHE-S18-AY?
All NP88N055MHE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP88N055MHE-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP88N055MHE-S18-AY part is unused and in its original packaging.
Return procedure for NP88N055MHE-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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