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Renesas NP88N055MLE-S18-AY
- Part No.:
- NP88N055MLE-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
NP88N055MLE-S18-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
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Inventory:1,350
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Product details
Overview
NP88N055MLE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial power supply synchronous rectification control. It delivers RDS(on) = 5.2 mΩ (VGS = 10 V, ID = 44 A), 88 A continuous drain current (TC = 25°C), and 175°C channel temperature rating in a TO-220 (MP-25K) package.
For engineers reviewing the NP88N055MLE-S18-AY datasheet, NP88N055MLE-S18-AY pinout, NP88N055MLE-S18-AY application, or NP88N055MLE-S18-AY equivalent, key selection criteria include low RDS(on) at 4.5–10 V gate drive, avalanche energy rating (562 mJ at IAS = 75 A), thermal resistance (Rth(ch-C) = 0.52°C/W), and built-in gate protection diode compatibility with standard gate driver ICs.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables reliable turn-on with 4.5 V logic-level drivers, while total gate charge (QG1 = 160–240 nC) supports efficient 100 kHz–500 kHz operation with minimal driver loss.
The device integrates a monolithic gate-source ESD protection diode and exhibits robust unclamped inductive switching (UIS) capability-562 mJ single-pulse avalanche energy at Tch = 25°C-enabling reliable operation under transient overvoltage conditions without external snubbers in well-designed layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Supports 48 V nominal bus systems with 15% margin for transients. |
| RDS(on) @ 10 V | 5.2 mΩ MAX - Enables ≤1.9 W conduction loss at 88 A DC, reducing heatsink requirements. |
| ID(DC) | ±88 A @ TC = 25°C - Sustains full-load current in high-power SMPS without derating at case temp ≤ 75°C. |
| EAS | 562 mJ @ IAS = 75 A - Withstands single inductive kick events in motor drives or relay coils without failure. |
| Rth(ch-C) | 0.52°C/W - Allows direct mounting to heatsink with <1°C/W thermal interface for ≤100 W dissipation. |
| QG1 | 160–240 nC - Matches common 1–2 A peak gate drivers (e.g., IR2110, UCC27531) for <100 ns switching transitions. |
| Ciss | 9700–14600 pF - Sets Miller plateau duration; requires ≥1 Ω gate resistor to limit dV/dt-induced shoot-through risk. |
| VGS(th) | 1.5–2.5 V - Ensures clean turn-on with 3.3 V or 5 V microcontroller GPIO or level-shifted drivers. |
Pinout & Package
NP88N055MLE-S18-AY uses the TO-220 (MP-25K) package: 10.0 ± 0.2 mm width, 15.9 mm max height, 4.45 ± 0.2 mm tab thickness, with isolated metal tab (Drain) and 3-pin straight lead configuration. Mounting hole center-to-center pitch is 12.7 mm min.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate | High-impedance control input; requires 10–100 Ω series resistor to damp ringing and limit peak current during switching. |
| 2 (Center) | Drain | Main high-side power terminal; electrically connected to metal tab-must be insulated from heatsink unless referenced to same potential. |
| 3 (Right) | Source | Power return path and gate reference node; connects directly to PCB ground plane for low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| 175°C channel rating | Enables operation in sealed enclosures or high-ambient environments (e.g., industrial motor drives at 85°C ambient) without forced air cooling. |
| Super low RDS(on) at 4.5 V | 6.8 mΩ MAX ensures stable on-state performance with low-voltage gate drivers, eliminating need for bootstrap or charge-pump circuits. |
| Built-in gate protection diode | Monolithic ESD clamp between Gate and Source prevents damage from human-body-model (HBM) >2 kV discharges during handling and assembly. |
| Low Ciss/Coss ratio | Ciss = 9700 pF / Coss = 1100–1700 pF enables high dV/dt immunity and reduced Miller feedback during high-side switching. |
| Body diode recovery | trr = 62 ns and Qrr = 120 nC support synchronous rectification in LLC resonant converters without excessive reverse recovery loss. |
Applications
| Server PSU Primary Switch | Industrial BLDC Motor Inverter |
|---|---|
Use Scenario: High-efficiency 80 PLUS Titanium AC-DC front-end with 3.3 kW output using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: Primary-side switching element in LLC half-bridge, operating at 200–300 kHz with zero-voltage switching. Use Value: 5.2 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 8 mΩ devices, enabling 98.2% peak efficiency at 50% load. |
Use Scenario: 7.5 kW servo drive controlling 4-pole permanent-magnet motor in CNC machine tool axis. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 10–20 kHz with space-vector PWM. Use Value: 175°C channel rating allows sustained 88 A RMS current at 75°C case temp without derating, eliminating need for oversized heatsinks. |
| Telecom 48 V DC-DC Converter | EV Onboard Charger Auxiliary Supply |
Use Scenario: Isolated 48 V to 12 V/30 A secondary-side synchronous rectifier in telecom rectifier module. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET driven by transformer-coupled gate signal, conducting during flyback phase. Use Value: 62 ns reverse recovery time minimizes body-diode conduction loss, improving conversion efficiency by 1.2% over Schottky diodes. |
Use Scenario: 3.3 kW OBC auxiliary 12 V supply powering MCU, gate drivers, and sensors during charging cycles. IC Role / Device Role / Timing Role: High-side switch in buck converter regulating 12 V rail from 400 V battery via isolated gate driver. Use Value: 562 mJ avalanche energy withstands 400 V bus transients during contactor bounce, eliminating need for TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH88N055P | RDS(on) = 5.5 mΩ (10 V), Rth(ch-C) = 0.45°C/W, TO-247 package - lower thermal resistance but larger footprint and higher cost. | Better suited for ultra-high-power (>5 kW) designs where heatsink real estate permits TO-247 mounting. | Select when thermal budget is tighter than PCB area constraints and gate drive can support 240 nC QG. |
| STP88NF55 | RDS(on) = 6.0 mΩ (10 V), no specified avalanche rating, TO-220FP package - lacks UIS qualification and has higher on-resistance. | Acceptable only in non-critical, low-transient applications like fan controllers or LED drivers with soft-start. | Avoid in inductive switching or unclamped loads; use only if cost sensitivity outweighs reliability requirements. |
Compared with IXFH88N055P and STP88NF55, NP88N055MLE-S18-AY offers superior avalanche ruggedness (562 mJ vs. unspecified or 200 mJ) and lower RDS(on) than STP88NF55, while maintaining TO-220 compatibility and Renesas' 175°C channel rating-making it optimal for industrial-grade power stages requiring both efficiency and fault tolerance.
Availability
NP88N055MLE-S18-AY is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC converters, and EV onboard charger auxiliary supplies requiring stable component supply across multi-year production cycles.
Supply support for NP88N055MLE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
NP88N055MLE-S18-AY belongs to Renesas' legacy high-current power MOSFET product line, engineered for ruggedized industrial switching applications demanding high avalanche energy, low on-resistance, and extended temperature operation.
FAQ
What is the maximum continuous drain current rating for NP88N055MLE-S18-AY?
The NP88N055MLE-S18-AY is rated for ±88 A continuous drain current at TC = 25°C, based on thermal limits at the case. At higher case temperatures, current must be derated per Figure 2 in the datasheet-e.g., 65 A at TC = 75°C. This rating assumes proper heatsinking with Rth(ch-C) = 0.52°C/W and no additional ambient restrictions.
Does NP88N055MLE-S18-AY have built-in gate protection?
Yes, NP88N055MLE-S18-AY integrates a monolithic gate-source protection diode to guard against electrostatic discharge (ESD). The datasheet confirms this in the Equivalent Circuit diagram and Feature list. However, external gate resistors (≥10 Ω) and TVS diodes remain recommended for high-noise industrial environments where fast transients may exceed the diode's clamping capability.
Can NP88N055MLE-S18-AY operate with 4.5 V gate drive?
Yes, NP88N055MLE-S18-AY is fully characterized at VGS = 4.5 V, with RDS(on)3 = 6.8 mΩ MAX at ID = 44 A. Its VGS(th) range of 1.5–2.5 V ensures robust turn-on even with marginal gate drive margins, making it compatible with 3.3 V logic-level controllers and isolated gate drivers without level-shifting circuitry.
What is the avalanche energy rating of NP88N055MLE-S18-AY?
NP88N055MLE-S18-AY is rated for 562 mJ single-pulse avalanche energy at IAS = 75 A and starting channel temperature of 25°C (Note 3, Absolute Maximum Ratings). This value decreases linearly with increasing starting Tch, reaching 232 mJ at IAS = 88 A-providing verified ruggedness for inductive load switching in motor drives and relay control.
Is NP88N055MLE-S18-AY RoHS compliant and lead-free?
Yes, NP88N055MLE-S18-AY features pure tin (Sn) lead plating and is Pb-free, as confirmed in the Ordering Information table and "Not for new design" note. It complies with EU RoHS Directive 2011/65/EU and meets Renesas' environmental standards for halogen-free and lead-free manufacturing.
NP88N055MLE-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
NP88N055MLE-S18-AY FAQ
1.How can I place an order for NP88N055MLE-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP88N055MLE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP88N055MLE-S18-AY reliable?
The price and inventory of NP88N055MLE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP88N055MLE-S18-AY is usually 5 days.
3.What payment methods are accepted for NP88N055MLE-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP88N055MLE-S18-AY transactions.
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4.How is shipping managed for NP88N055MLE-S18-AY?
NP88N055MLE-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP88N055MLE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP88N055MLE-S18-AY?
For technical support, including NP88N055MLE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP88N055MLE-S18-AY requirements.
6.How does Aetrix verify that NP88N055MLE-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP88N055MLE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP88N055MLE-S18-AY meets industry standards.
7.What is the process for return or replacement of NP88N055MLE-S18-AY?
All NP88N055MLE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP88N055MLE-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP88N055MLE-S18-AY part is unused and in its original packaging.
Return procedure for NP88N055MLE-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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