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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP89N04PDK-E1-AY

Name: NP89N04PDK-E1-AY
Brand: Renesas
SKU: NP89N04PDK-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP89N04PDK-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP89N04PDK-E1-AY.pdf

Description:: MOSFET N-CH 40V 90A TO263-3

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Product details

Overview

NP89N04PDK-E1-AY from Renesas Electronics is a 40 V, 90 A N-channel power MOSFET in TO-263 (MP-25ZP) package, optimized for high-current automotive switching applications. It delivers R_DS(on) = 2.45 mΩ (typ.) at V_GS = 10 V and ID = 45 A, features logic-level gate drive (V_GS(th) = 1.8 V typ.), and is AEC-Q101 qualified for under-hood motor control and DC-DC converter primary-side switching.

For engineers reviewing the NP89N04PDK-E1-AY datasheet, NP89N04PDK-E1-AY pinout, NP89N04PDK-E1-AY application, or NP89N04PDK-E1-AY equivalent, key selection criteria include its 2.95 mΩ max R_DS(on), 3900 pF typical C_iss, 360 A pulsed drain current capability, TO-263 thermal performance (R_th(ch-C) = 1.02 °C/W), and automotive-grade reliability validation.

Technical Context

This MOSFET employs a trench-gate super-junction structure enabling ultra-low on-resistance while maintaining fast switching characteristics. Its gate threshold voltage of 1.5–2.5 V supports direct microcontroller interface without level-shifting, and the integrated body diode exhibits VF(S-D) = 0.9 V (typ.) at 90 A with trr = 43 ns - critical for synchronous rectification and freewheeling in high-efficiency converters.

The device is characterized for repetitive avalanche energy (E_AR = 136 mJ) and rated for channel temperatures up to 175 °C, making it suitable for thermally constrained automotive environments where transient overvoltage and thermal cycling are routine. Its 100% production-tested avalanche capability ensures robustness in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient margin.
I_D(DC)	±90 A - Continuous conduction capability at T_C = 25 °C, enabling single-device use in high-power BLDC inverter legs.
R_DS(on) max	2.95 mΩ @ V_GS = 10 V, I_D = 45 A - Enables <1.3 W conduction loss at 45 A, reducing heatsink requirements.
C_iss typ	3900 pF @ V_DS = 25 V - Low input capacitance minimizes gate drive power and improves switching speed stability.
Q_G max	102 nC @ V_DD = 32 V, I_D = 90 A - Defines gate driver sizing requirement for <40 ns turn-on delay and <21 ns rise time.
t_r/t_f	8–21 ns / 9–23 ns - Fast edge rates support >200 kHz PWM operation in phase-shifted full-bridge topologies.
T_ch max	175 °C - Rated junction temperature allows operation in engine bay ambient up to 125 °C with derated power.

Pinout & Package

NP89N04PDK-E1-AY uses the TO-263 (MP-25ZP) surface-mount package with exposed drain tab for enhanced thermal dissipation. The 4-pin configuration includes Gate, Drain, Source, and Fin (Drain) terminals - the Fin is electrically connected to Drain and serves as the primary thermal path to the PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control electrode	Receives logic-level voltage (1.5–2.5 V threshold); requires low-impedance drive due to 102 nC total gate charge.
2. Drain	Main current output terminal	Connected to high-side switch node or DC bus; electrically tied to Pin 4 (Fin) for thermal and current conduction.
3. Source	Main current return path	Reference node for gate drive; must be routed with low inductance to minimize switching oscillation.
4. Fin (Drain)	Thermal & electrical drain extension	Large copper pad for soldering to PCB thermal plane; provides 1.02 °C/W channel-to-case thermal resistance.

Key Features

Feature	Design Value
Super low R_DS(on)	2.45 mΩ typ. at 10 V gate drive enables <1.5 W conduction loss at 50 A - reduces thermal design burden in space-constrained modules.
Logic-level gate drive	V_GS(th) = 1.8 V typ. allows direct interface with 3.3 V or 5 V MCUs without external level shifters - simplifies gate driver BOM.
AEC-Q101 qualification	Validated for automotive temperature, humidity, mechanical shock, and lifetime stress testing - meets ISO/TS 16949 manufacturing requirements.
Repetitive avalanche rated	E_AR = 136 mJ and I_AR = 37 A ensure reliable operation during inductive load turn-off transients without snubber circuits.
Low Q_GD/Q_G ratio	Q_GD = 11 nC (11% of Q_G) suppresses Miller-induced shoot-through in half-bridge configurations - improves system efficiency and noise immunity.

Applications

Automotive BLDC Motor Inverter	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-power traction inverter for electric power steering (EPS) or HVAC blower motors in 12 V/48 V dual-battery architectures. IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter leg, operating at 10–20 kHz PWM frequency. Use Value: 90 A DC rating and 360 A pulse capability support peak torque delivery; 2.95 mΩ R_DS(on) limits conduction loss to <13 W per device at full load.	Use Scenario: Primary-side synchronous rectifier in bidirectional buck-boost converter linking 12 V starter battery and 48 V Li-ion auxiliary storage. IC Role / Device Role / Timing Role: High-efficiency switching transistor in phase-shifted full-bridge topology, switching at 150–250 kHz. Use Value: 3900 pF C_iss and 40 ns t_d(on) enable precise dead-time control; 175 °C T_ch rating sustains operation during sustained 48 V regenerative braking events.
Onboard Charger (OBC) Input Stage	Automotive LED Headlamp Driver
Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC module for Level 2 EV charging, operating in continuous conduction mode. IC Role / Device Role / Timing Role: Fast-switching, high-current boost FET handling 40 A RMS input current with 400 V DC link. Use Value: 40 V V_DSS provides sufficient margin above 340 V PFC output; 102 nC Q_G enables efficient gate drive with integrated SiC driver ICs.	Use Scenario: High-side current regulator for adaptive LED matrix headlamps requiring dynamic dimming and fault-tolerant short-circuit protection. IC Role / Device Role / Timing Role: Precision current-switching MOSFET controlled by PWM from automotive MCU, with integrated diagnostics. Use Value: 0.9 V body diode forward voltage enables fast freewheeling during PWM off-time; AEC-Q101 qualification ensures compliance with UNECE R149 optical safety standards.

Automotive BLDC Motor Inverter

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-power traction inverter for electric power steering (EPS) or HVAC blower motors in 12 V/48 V dual-battery architectures.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter leg, operating at 10–20 kHz PWM frequency.

Use Value: 90 A DC rating and 360 A pulse capability support peak torque delivery; 2.95 mΩ R_DS(on) limits conduction loss to <13 W per device at full load.

Use Scenario: Primary-side synchronous rectifier in bidirectional buck-boost converter linking 12 V starter battery and 48 V Li-ion auxiliary storage.

IC Role / Device Role / Timing Role: High-efficiency switching transistor in phase-shifted full-bridge topology, switching at 150–250 kHz.

Use Value: 3900 pF C_iss and 40 ns t_d(on) enable precise dead-time control; 175 °C T_ch rating sustains operation during sustained 48 V regenerative braking events.

Onboard Charger (OBC) Input Stage

Automotive LED Headlamp Driver

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC module for Level 2 EV charging, operating in continuous conduction mode.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost FET handling 40 A RMS input current with 400 V DC link.

Use Value: 40 V V_DSS provides sufficient margin above 340 V PFC output; 102 nC Q_G enables efficient gate drive with integrated SiC driver ICs.

Use Scenario: High-side current regulator for adaptive LED matrix headlamps requiring dynamic dimming and fault-tolerant short-circuit protection.

IC Role / Device Role / Timing Role: Precision current-switching MOSFET controlled by PWM from automotive MCU, with integrated diagnostics.

Use Value: 0.9 V body diode forward voltage enables fast freewheeling during PWM off-time; AEC-Q101 qualification ensures compliance with UNECE R149 optical safety standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.6 mΩ max @ 10 V; TO-263 package; AEC-Q101 qualified.	Higher current rating and lower R_DS(on) but larger die size increases gate charge (Q_G = 130 nC) and cost.	Select when >150 A peak current or <2 mΩ on-resistance is required; verify PCB thermal relief for higher power density.
IXTP90N045T	45 V, 90 A, R_DS(on) = 4.5 mΩ max @ 10 V; TO-220 package; not AEC-Q101 qualified.	Higher R_DS(on) increases conduction loss by ~50%; through-hole mounting limits thermal performance (R_th(ch-A) ≈ 62 °C/W).	Consider only for non-automotive industrial prototypes where qualification and surface-mount assembly are not mandatory.

Compared with STL220N4F7AG and IXTP90N045T, the NP89N04PDK-E1-AY offers optimal balance of automotive qualification, 2.95 mΩ R_DS(on), and 102 nC gate charge - making it preferred for production-grade 48 V systems where thermal management, reliability, and layout compactness are jointly constrained.

Availability

NP89N04PDK-E1-AY is available at Aetrix Electronics and suitable for automotive BLDC inverters, 48 V mild hybrid DC-DC converters, and onboard charger input stages requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for NP89N04PDK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP89N04PDK-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control units, ADAS power supplies, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for NP89N04PDK-E1-AY at 100°C case temperature?

The NP89N04PDK-E1-AY has a DC drain current rating of ±90 A at T_C = 25 °C. At 100 °C case temperature, derating applies: using the Total Power Dissipation vs. Case Temperature curve on page 3 of the datasheet, PT drops to ~70 W; with R_DS(on) ≈ 3.5 mΩ at elevated temperature, the practical continuous current is approximately 45 A. Always verify thermal design with actual board layout and airflow.

Is NP89N04PDK-E1-AY pin-compatible with other TO-263 N-channel MOSFETs like the RJK0451DPE?

No, NP89N04PDK-E1-AY is not pin-compatible with RJK0451DPE. While both use TO-263 packages, NP89N04PDK-E1-AY has a 4-pin MP-25ZP configuration (Gate, Drain, Source, Fin), whereas RJK0451DPE uses a standard 3-pin TO-263 layout. The Fin terminal on NP89N04PDK-E1-AY is electrically tied to Drain and requires dedicated PCB thermal pad routing - mismatched pinout risks incorrect assembly and thermal failure.

Does NP89N04PDK-E1-AY support 3.3 V logic-level gate drive in practice?

Yes, NP89N04PDK-E1-AY supports 3.3 V logic-level drive due to its V_GS(th) range of 1.5–2.5 V. However, at V_GS = 3.3 V, R_DS(on) rises significantly (R_DS(on)2 = 3.10–6.20 mΩ @ V_GS = 4.5 V, ID = 23 A); for 90 A operation, 10 V gate drive is required to achieve specified 2.95 mΩ max. Use gate drivers with adjustable output or bootstrap circuits for full performance.

What is the avalanche energy rating of NP89N04PDK-E1-AY, and how is it validated?

The NP89N04PDK-E1-AY is rated for repetitive avalanche energy E_AR = 136 mJ and repetitive avalanche current I_AR = 37 A, verified per Test Circuit 1 in the datasheet (RG = 25 Ω, V_GS = 20 V → 0 V). This rating is confirmed by characterization - not 100% production tested - but guaranteed by Renesas' design and qualification process for automotive applications involving inductive switching transients.

How does the body diode performance of NP89N04PDK-E1-AY compare to discrete Schottky alternatives in synchronous rectification?

The NP89N04PDK-E1-AY body diode has VF(S-D) = 0.9 V (typ.) at 90 A and trr = 43 ns, which is competitive with medium-voltage Schottky diodes in cost-sensitive automotive designs. While discrete Schottkys offer lower VF (~0.5 V), they lack integrated gate control and require separate layout. The NP89N04PDK-E1-AY's matched diode enables seamless synchronous rectification without additional components - critical for space-constrained OBC and DC-DC modules.

NP89N04PDK-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.95mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 147W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP89N04PDK-E1-AY FAQ

1.How can I place an order for NP89N04PDK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP89N04PDK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP89N04PDK-E1-AY reliable?

The price and inventory of NP89N04PDK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP89N04PDK-E1-AY is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP89N04PDK-E1-AY transactions.

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4.How is shipping managed for NP89N04PDK-E1-AY?

NP89N04PDK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP89N04PDK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP89N04PDK-E1-AY?

For technical support, including NP89N04PDK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP89N04PDK-E1-AY requirements.

6.How does Aetrix verify that NP89N04PDK-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP89N04PDK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP89N04PDK-E1-AY meets industry standards.

7.What is the process for return or replacement of NP89N04PDK-E1-AY?

All NP89N04PDK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP89N04PDK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP89N04PDK-E1-AY part is unused and in its original packaging.

Return procedure for NP89N04PDK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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