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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP90N03VUG-E1-AY

Name: NP90N03VUG-E1-AY
Brand: Renesas
SKU: NP90N03VUG-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP90N03VUG-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NP90N03VUG-E1-AY.pdf

Description:: MOSFET N-CH 30V 90A TO252

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Product details

Overview

NP90N03VUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in automotive and industrial power stages. It delivers 90 A DC drain current, 3.2 mΩ max R_DS(on) at V_GS = 10 V and ID = 45 A, 175°C channel temperature rating, and AEC-Q101 qualification - enabling use in engine control units, battery disconnect switches, and 12 V/24 V DC-DC converter primary-side switches.

For engineers reviewing the NP90N03VUG-E1-AY datasheet, NP90N03VUG-E1-AY pinout, NP90N03VUG-E1-AY application, or NP90N03VUG-E1-AY equivalent, key selection criteria include its TO-252 package thermal performance (R_th(ch-C) = 1.43°C/W), repetitive avalanche capability (I_AR = 41 A), low gate charge (Q_G = 90–135 nC), and body diode reverse recovery characteristics (t_rr = 42 ns, Q_rr = 43 nC).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in unidirectional high-power switching topologies. Its gate threshold voltage range (2.0–4.0 V) ensures robust turn-on margin under noisy automotive supply conditions, while the 20 V maximum gate-source voltage supports standard 12 V gate drivers with margin.

The device integrates a co-packaged body diode with VF(S-D) = 0.9–1.5 V at IF = 90 A and exhibits controlled reverse recovery behavior (trr = 42 ns, Qrr = 43 nC), making it suitable for synchronous rectification and freewheeling paths where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports 12 V/24 V automotive and industrial bus systems with 2× voltage margin against transients.
R_DS(on) max	3.2 mΩ @ V_GS = 10 V, I_D = 45 A - Enables <1.5 W conduction loss at 90 A DC, reducing heatsink requirements.
I_D(DC)	±90 A - Rated continuous drain current at T_C = 25°C, validated for sustained high-current motor drive or load switch operation.
Q_G	90–135 nC - Determines gate driver power requirement and switching speed; enables <100 ns turn-off delay with low-R_G.
t_rr / Q_rr	42 ns / 43 nC - Defines body diode recovery behavior during hard-switched transitions, critical for EMI and shoot-through risk management.
R_th(ch-C)	1.43°C/W - Confirms efficient heat transfer to PCB copper or heatsink, supporting >70 W continuous dissipation at T_C = 100°C.
AEC-Q101	Qualified - Validated for automotive under-hood applications per stress test requirements including HTGB, HTRB, and temperature cycling.

Pinout & Package

NP90N03VUG-E1-AY is housed in a TO-252 (MP-3ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The 3-pin configuration supports high-current PCB routing with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V swing and sufficient peak current to charge Q_G within target switching time.
2 (Drain)	High-side power node	Connected to input bus (e.g., battery+); electrically tied to metal tab/fin for low-inductance, high-current return path.
3 (Source)	Power reference node	Serves as return path for load current and gate drive reference; must be routed with low impedance to minimize V_GS noise coupling.
4 (Fin/Drain)	Thermal & electrical drain extension	Exposed metal pad soldered to large PCB copper area; carries full drain current and dissipates >95% of device heat.

Key Features

Feature	Design Value
175°C channel temperature rating	Enables operation in under-hood environments up to 150°C ambient with derating, extending system lifetime versus 150°C-rated alternatives.
Super low R_DS(on)	3.2 mΩ max reduces I²R losses by >30% vs. comparable 4–5 mΩ MOSFETs at 90 A, directly lowering thermal design burden.
Repetitive avalanche rated	41 A / 168 mJ capability allows safe operation during inductive load turn-off without external snubbers in many automotive solenoid or motor circuits.
Pb-free, Sn-plated terminals	Complies with RoHS Directive 2011/65/EU and supports lead-free reflow profiles up to 260°C peak for 10 s.
Low C_iss (5000 pF typ.)	Reduces gate drive power and improves EMI profile in high-frequency PWM applications such as 100–500 kHz DC-DC converters.

Applications

Engine Control Unit (ECU) Load Switch	12 V Automotive DC-DC Converter
Use Scenario: High-side switching of fuel pump, radiator fan, or injector drivers in engine management systems. IC Role / Device Role / Timing Role: Power MOSFET acting as main current-carrying switch controlled by microcontroller GPIO via gate driver IC. Use Value: 90 A DC rating and 175°C channel rating ensure reliable operation across extended temperature cycles and load surges typical in under-hood environments.	Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 12 V → 5 V/3.3 V buck-derived converters for ADAS modules. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in hard-switched or quasi-resonant topology with precise gate timing control. Use Value: Low Q_G (90–135 nC) and fast t_f (13–30 ns) enable efficient operation at ≥200 kHz, minimizing switching losses and transformer size.
Industrial Battery Disconnect Switch	48 V Telecom Power Distribution
Use Scenario: Solid-state replacement for mechanical contactors in UPS or energy storage systems requiring bidirectional fault isolation. IC Role / Device Role / Timing Role: Bidirectionally rated (±90 A) power switch controlled by protection ASIC to interrupt fault currents within microseconds. Use Value: Repetitive avalanche rating (41 A / 168 mJ) provides inherent overvoltage clamping during inductive interruption, eliminating need for external TVS.	Use Scenario: OR-ing FET or hot-swap controller in redundant 48 V telecom power shelves with strict inrush and short-circuit response. IC Role / Device Role / Timing Role: N-channel MOSFET used in back-to-back configuration for bidirectional blocking and controlled turn-on sequencing. Use Value: Tight V_GS(th) distribution (2.0–4.0 V) ensures predictable turn-on with standard 5 V logic-level gate drivers, simplifying control circuitry.

Engine Control Unit (ECU) Load Switch

12 V Automotive DC-DC Converter

Use Scenario: High-side switching of fuel pump, radiator fan, or injector drivers in engine management systems.

IC Role / Device Role / Timing Role: Power MOSFET acting as main current-carrying switch controlled by microcontroller GPIO via gate driver IC.

Use Value: 90 A DC rating and 175°C channel rating ensure reliable operation across extended temperature cycles and load surges typical in under-hood environments.

Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 12 V → 5 V/3.3 V buck-derived converters for ADAS modules.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in hard-switched or quasi-resonant topology with precise gate timing control.

Use Value: Low Q_G (90–135 nC) and fast t_f (13–30 ns) enable efficient operation at ≥200 kHz, minimizing switching losses and transformer size.

Industrial Battery Disconnect Switch

48 V Telecom Power Distribution

Use Scenario: Solid-state replacement for mechanical contactors in UPS or energy storage systems requiring bidirectional fault isolation.

IC Role / Device Role / Timing Role: Bidirectionally rated (±90 A) power switch controlled by protection ASIC to interrupt fault currents within microseconds.

Use Value: Repetitive avalanche rating (41 A / 168 mJ) provides inherent overvoltage clamping during inductive interruption, eliminating need for external TVS.

Use Scenario: OR-ing FET or hot-swap controller in redundant 48 V telecom power shelves with strict inrush and short-circuit response.

IC Role / Device Role / Timing Role: N-channel MOSFET used in back-to-back configuration for bidirectional blocking and controlled turn-on sequencing.

Use Value: Tight V_GS(th) distribution (2.0–4.0 V) ensures predictable turn-on with standard 5 V logic-level gate drivers, simplifying control circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A, R_DS(on) = 1.8 mΩ max, TO-263 package, higher current but larger footprint and higher Q_G (180 nC).	Preferred for ultra-high-current inverters where board space permits larger package and thermal mass.	Select when >150 A DC capability is required and PCB layout accommodates TO-263 thermal pad and gate loop area.
IRF1404ZPBF	40 V, 195 A, R_DS(on) = 3.7 mΩ max, TO-220AB package, lower voltage rating and no AEC-Q101 qualification.	Suitable for non-automotive 24 V industrial systems where qualification and thermal resistance are less critical.	Choose only for cost-sensitive, non-automotive applications where 30 V rating suffices and TO-220 mounting is acceptable.

Compared with STL220N3LLH6 and IRF1404ZPBF, NP90N03VUG-E1-AY offers optimal balance of automotive qualification, TO-252 thermal efficiency (1.43°C/W), and gate drive compatibility - making it preferred for space-constrained, thermally demanding 12–24 V automotive and industrial power switches where 90 A DC is sufficient.

Availability

NP90N03VUG-E1-AY is available at Aetrix Electronics and suitable for automotive engine control units, industrial battery disconnect systems, and 12 V/24 V DC-DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for NP90N03VUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

NP90N03VUG-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine management, body electronics, and powertrain subsystems.

FAQ

What is the maximum continuous drain current rating for NP90N03VUG-E1-AY?

The NP90N03VUG-E1-AY is rated for ±90 A DC drain current at case temperature T_C = 25°C. This rating assumes proper PCB copper area for thermal conduction through the exposed drain fin. At higher case temperatures, the current must be derated per the datasheet's forward bias safe operating area curve - for example, ~65 A at T_C = 100°C. The NP90N03VUG-E1-AY maintains this rating under AEC-Q101 stress conditions, confirming robustness for automotive duty cycles.

Is NP90N03VUG-E1-AY qualified for automotive applications?

Yes, NP90N03VUG-E1-AY is explicitly AEC-Q101 qualified, having passed stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and temperature cycling. Its 175°C channel temperature rating, Pb-free plating, and TO-252 package construction meet automotive under-hood reliability requirements. The NP90N03VUG-E1-AY is intended for use in engine control units, transmission control modules, and other non-life-support automotive systems classified under Renesas' "High Quality" grade.

What is the gate threshold voltage range for NP90N03VUG-E1-AY?

The gate threshold voltage (V_GS(th)) for NP90N03VUG-E1-AY is specified as 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers while providing noise immunity against spurious gate excursions in electrically noisy automotive environments. The NP90N03VUG-E1-AY's V_GS(th) remains stable across −55°C to +175°C channel temperature, supporting cold-cranking and high-ambient operation.

Does NP90N03VUG-E1-AY include an integrated body diode?

Yes, NP90N03VUG-E1-AY incorporates a monolithic body diode between source and drain, with forward voltage VF(S-D) = 0.9–1.5 V at I_F = 90 A and V_GS = 0 V. Its reverse recovery time (t_rr = 42 ns) and charge (Q_rr = 43 nC) are characterized for use in freewheeling and synchronous rectification roles. The NP90N03VUG-E1-AY body diode is not optimized for ultra-fast recovery but is fully specified and validated for standard hard-switched topologies in automotive power stages.

What is the thermal resistance from channel to case for NP90N03VUG-E1-AY?

The channel-to-case thermal resistance (R_th(ch-C)) for NP90N03VUG-E1-AY is 1.43°C/W, measured under JEDEC JESD51-14 conditions on a 1-in² 2-oz copper pad. This low value reflects the efficient thermal path from silicon die to the exposed drain fin in the TO-252 package. When mounted per recommended PCB layout, the NP90N03VUG-E1-AY can dissipate over 70 W continuously at T_C = 100°C - a key advantage over similar MOSFETs with R_th(ch-C) > 2.0°C/W.

NP90N03VUG-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 7500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta), 105W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252

NP90N03VUG-E1-AY FAQ

1.How can I place an order for NP90N03VUG-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP90N03VUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP90N03VUG-E1-AY reliable?

The price and inventory of NP90N03VUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N03VUG-E1-AY is usually 5 days.

3.What payment methods are accepted for NP90N03VUG-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N03VUG-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP90N03VUG-E1-AY?

NP90N03VUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP90N03VUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP90N03VUG-E1-AY?

For technical support, including NP90N03VUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N03VUG-E1-AY requirements.

6.How does Aetrix verify that NP90N03VUG-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP90N03VUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N03VUG-E1-AY meets industry standards.

7.What is the process for return or replacement of NP90N03VUG-E1-AY?

All NP90N03VUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N03VUG-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP90N03VUG-E1-AY part is unused and in its original packaging.

Return procedure for NP90N03VUG-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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