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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP90N04MUG-S18-AY

Name: NP90N04MUG-S18-AY
Brand: Renesas
SKU: NP90N04MUG-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP90N04MUG-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: NP90N04MUG-S18-AY.pdf

Description:: MOSFET N-CH 40V 90A TO220-3

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Product details

Overview

NP90N04MUG-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers 90 A continuous drain current at 25°C case temperature, features 3.0 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 45 A, supports 40 V drain-source voltage, and operates up to 175°C channel temperature - enabling compact, high-efficiency 12–24 V systems.

For engineers reviewing the NP90N04MUG-S18-AY datasheet, NP90N04MUG-S18-AY pinout, NP90N04MUG-S18-AY application, or NP90N04MUG-S18-AY equivalent, key selection criteria include its TO-220 (MP-25K) package thermal resistance (R_th(ch-C) = 0.69°C/W), repetitive avalanche rating (60 A / 360 mJ), and gate charge profile (Q_G = 182 nC, Q_GD = 64 nC) for optimized hard-switching efficiency in high-frequency SMPS and H-bridge inverters.

Technical Context

This MOSFET uses a planar vertical DMOS structure with optimized cell pitch and trench-assisted channel design to achieve ultra-low on-resistance while maintaining robust avalanche capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, and its body diode exhibits fast reverse recovery (t_rr = 52 ns, Q_rr = 72 nC) suitable for synchronous rectification and freewheeling in bidirectional topologies.

The device is characterized for operation across −55°C to +175°C channel temperature range, with derated power dissipation above 25°C case temperature and defined safe operating area (SOA) limits for both DC and pulsed conditions (ID(pulse) = ±360 A, PW ≤ 10 μs). Thermal design must account for its 83.3°C/W channel-to-ambient resistance in non-heatsinked layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V bus applications without derating
R_DS(on) max	3.0 mΩ at V_GS = 10 V, I_D = 45 A - Enables <1.4 W conduction loss at 90 A in heatsinked designs
I_D(DC)	±90 A at T_C = 25°C - Supports high-current motor phase legs and DC-DC primary switches
Q_G	182 nC - Determines gate driver power requirement and switching speed trade-off
t_r/t_f	12 ns / 17 ns - Enables >500 kHz hard-switching with low EMI in resonant converters
E_AR	360 mJ - Allows single-pulse energy absorption during inductive load interruption
R_th(ch-C)	0.69°C/W - Defines minimum heatsink thermal resistance needed for 217 W dissipation

Pinout & Package

NP90N04MUG-S18-AY is housed in a TO-220 (MP-25K) package with standard three-terminal configuration: Drain connected to tab, Source and Gate on leads. The metal tab is electrically connected to the Drain terminal and must be isolated from chassis unless used as heatsink return path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying high-side node	Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching; common return for driver supply
Gate	Control input for channel conduction	High-impedance MOS gate requiring low-impedance driver (<25 Ω recommended) to minimize switching losses

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.4 mΩ typical at 45 A enables <1 W conduction loss in 24 V battery systems
175°C channel rating	Supports operation in sealed enclosures or high-ambient environments without derating
Repetitive avalanche capability	60 A / 360 mJ rating allows reliable inductive load switching without external snubbers
Fast body diode	52 ns t_rr and 72 nC Q_rr reduce freewheeling losses in half-bridge configurations
Pb-free pure Sn plating	RoHS-compliant termination compatible with standard wave and reflow soldering profiles

Applications

Industrial Motor Drives	Server Power Supplies
Use Scenario: High-current H-bridge inverter for 24 V BLDC fans and pumps in factory automation. IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs, handling 90 A peak phase current with <100 ns switching transitions. Use Value: Low R_DS(on) reduces heat generation in space-constrained control cabinets; 175°C rating avoids thermal shutdown during sustained overload.	Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output LLC resonant converter for AI server racks. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes, driven by transformer-coupled gate signals. Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky; fast body diode enables zero-voltage switching recovery.
EV Onboard Chargers	Renewable Energy Inverters
Use Scenario: DC link switching in bidirectional OBC modules converting AC grid to 400 V battery pack. IC Role / Device Role / Timing Role: N-channel switch in active clamp circuit managing regenerative energy during AC-to-DC transition. Use Value: Repetitive avalanche rating absorbs inductive spikes from transformer leakage; TO-220 package simplifies mechanical integration into compact OBC housings.	Use Scenario: Low-voltage DC bus switching in micro-inverters for residential solar panel strings (20–60 V). IC Role / Device Role / Timing Role: High-side switch in buck-boost stage regulating panel output before MPPT conversion. Use Value: 40 V V_DSS matches PV open-circuit voltage margin; 90 A rating supports >2 kW per string with minimal paralleling.

Industrial Motor Drives

Server Power Supplies

Use Scenario: High-current H-bridge inverter for 24 V BLDC fans and pumps in factory automation.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs, handling 90 A peak phase current with <100 ns switching transitions.

Use Value: Low R_DS(on) reduces heat generation in space-constrained control cabinets; 175°C rating avoids thermal shutdown during sustained overload.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output LLC resonant converter for AI server racks.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky; fast body diode enables zero-voltage switching recovery.

EV Onboard Chargers

Renewable Energy Inverters

Use Scenario: DC link switching in bidirectional OBC modules converting AC grid to 400 V battery pack.

IC Role / Device Role / Timing Role: N-channel switch in active clamp circuit managing regenerative energy during AC-to-DC transition.

Use Value: Repetitive avalanche rating absorbs inductive spikes from transformer leakage; TO-220 package simplifies mechanical integration into compact OBC housings.

Use Scenario: Low-voltage DC bus switching in micro-inverters for residential solar panel strings (20–60 V).

IC Role / Device Role / Timing Role: High-side switch in buck-boost stage regulating panel output before MPPT conversion.

Use Value: 40 V V_DSS matches PV open-circuit voltage margin; 90 A rating supports >2 kW per string with minimal paralleling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF04L	40 V V_DSS, 3.3 mΩ R_DS(on), TO-220, 175°C rating	Slightly higher on-resistance increases conduction loss by ~10% at full load	Valid alternative where marginal thermal margin exists and STMicroelectronics sourcing is preferred
IRF1404ZPBF	40 V V_DSS, 4.0 mΩ R_DS(on), TO-220, 175°C rating, higher Q_G (190 nC)	Higher gate charge slows switching, increasing dynamic losses in >200 kHz designs	Acceptable for lower-frequency (<100 kHz) industrial SMPS where cost is prioritized over efficiency

Compared with STP90NF04L and IRF1404ZPBF, the NP90N04MUG-S18-AY offers the lowest R_DS(on) and optimized Q_GD/Q_G ratio for faster turn-off - delivering superior efficiency in high-current, high-frequency motor control and telecom power applications.

Availability

NP90N04MUG-S18-AY is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for NP90N04MUG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP90N04MUG belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for ruggedized industrial switching applications demanding low conduction loss, high avalanche robustness, and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for NP90N04MUG-S18-AY?

The NP90N04MUG-S18-AY is rated for ±90 A continuous drain current (I_D(DC)) at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve in the datasheet - e.g., ~55 A at T_C = 100°C. Actual usable current depends on PCB layout, heatsinking, and ambient conditions, and must stay within the Forward Bias Safe Operating Area (SOA) limits.

Does NP90N04MUG-S18-AY have avalanche capability, and how is it specified?

Yes, the NP90N04MUG-S18-AY is rated for repetitive avalanche operation: 60 A peak current (I_AR) and 360 mJ energy (E_AR) under defined test conditions (T_ch ≤ 150°C, V_DD = 20 V, R_G = 25 Ω). This capability allows safe interruption of inductive loads without external snubbers in motor drive and relay driving applications.

What is the gate threshold voltage range for NP90N04MUG-S18-AY, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for NP90N04MUG-S18-AY is specified as 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V logic-level drivers, but full enhancement to low R_DS(on) requires V_GS ≥ 10 V. A 10 V gate drive achieves the 3.0 mΩ maximum on-resistance, minimizing conduction loss in high-current applications.

Can NP90N04MUG-S18-AY be used in surface-mount designs?

No, the NP90N04MUG-S18-AY is packaged exclusively in the through-hole TO-220 (MP-25K) format with a metal tab for heatsinking. It is not available in surface-mount variants such as D²PAK or LFPAK. For SMT alternatives, engineers should evaluate functionally similar parts like the RJK0451DPB (TO-252) or IPP040N04LG (TO-263), though these differ in thermal performance and pinout.

Is NP90N04MUG-S18-AY RoHS compliant, and what plating is used?

Yes, the NP90N04MUG-S18-AY is RoHS compliant and features pure tin (Sn) lead plating, as confirmed in the ordering information. The "S18-AY" suffix explicitly denotes Pb-free plating, and the device meets EU RoHS Directive requirements for restricted substances. Standard wave soldering profiles (≤260°C, ≤10 s) apply.

NP90N04MUG-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 182 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 217W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

NP90N04MUG-S18-AY FAQ

1.How can I place an order for NP90N04MUG-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP90N04MUG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP90N04MUG-S18-AY reliable?

The price and inventory of NP90N04MUG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N04MUG-S18-AY is usually 5 days.

3.What payment methods are accepted for NP90N04MUG-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N04MUG-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP90N04MUG-S18-AY?

NP90N04MUG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP90N04MUG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP90N04MUG-S18-AY?

For technical support, including NP90N04MUG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N04MUG-S18-AY requirements.

6.How does Aetrix verify that NP90N04MUG-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP90N04MUG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N04MUG-S18-AY meets industry standards.

7.What is the process for return or replacement of NP90N04MUG-S18-AY?

All NP90N04MUG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N04MUG-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP90N04MUG-S18-AY part is unused and in its original packaging.

Return procedure for NP90N04MUG-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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