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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP90N04VDG-E1-AY

Name: NP90N04VDG-E1-AY
Brand: Renesas
SKU: NP90N04VDG-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP90N04VDG-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NP90N04VDG-E1-AY.pdf

Description:: MOSFET N-CH 40V 90A TO252

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Product details

Overview

NP90N04VDG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in automotive and industrial power systems. It delivers ±90 A DC drain current, 4.0 mΩ max R_DS(on) at V_GS = 10 V, and AEC-Q101 qualification - enabling use in 12 V battery-fed motor drivers and DC-DC converter primary-side switches.

For engineers reviewing the NP90N04VDG-E1-AY datasheet, NP90N04VDG-E1-AY pinout, NP90N04VDG-E1-AY application, or NP90N04VDG-E1-AY equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.4–2.5 V), low 8.6 mΩ R_DS(on) at 4.5 V, and TO-252 package thermal performance (R_th(ch-C) = 1.43 °C/W) for high-efficiency, space-constrained power stages.

Technical Context

This device operates as a unidirectional high-side or low-side switch with integrated body diode, supporting pulse currents up to ±300 A (10 μs, 1% duty). Its gate charge profile (Q_G = 90–135 nC) and fast switching (t_d(on) = 17–34 ns, t_f = 8–20 ns) enable efficient operation in synchronous rectification and PWM-controlled inverters.

The MOSFET features avalanche-rated ruggedness (I_AR = 37 A, E_AR = 137 mJ at T_ch ≤ 150°C), defined by repetitive unclamped inductive switching tests with R_G = 25 Ω. Its C_iss = 4600 pF (typ.) and low Crss/Coss ratio support stable gate drive design under high dv/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with load-dump margin.
R_DS(on)1	4.0 mΩ max @ V_GS = 10 V, I_D = 45 A - Enables <1.8 W conduction loss at 45 A, critical for thermally constrained PCB layouts.
R_DS(on)2	8.6 mΩ max @ V_GS = 4.5 V, I_D = 35 A - Supports direct interfacing with 3.3 V/5 V microcontrollers without level-shifting.
I_D(DC)	±90 A - Sustains continuous motor stall or short-circuit currents in EV auxiliary systems and industrial actuators.
Q_G	90–135 nC - Determines gate driver power requirement; enables <1 W average gate loss at 100 kHz with 12 V drive.
R_th(ch-C)	1.43 °C/W - Allows 73 W steady-state dissipation at ΔT = 105°C, matching TO-252 copper pad thermal limits.
V_GS(th)	1.4–2.5 V - Ensures reliable turn-on with standard logic outputs and reduces risk of partial enhancement during noise transients.

Pinout & Package

NP90N04VDG-E1-AY uses the TO-252 (MP-3ZP) surface-mount package with exposed drain tab for thermal and electrical connection. The 4-pin configuration integrates drain, source, gate, and fin (drain-connected thermal pad) in a compact 10.4 mm × 6.5 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; requires <135 nC charge for full enhancement.
2 (Drain)	High-side power node	Main current path collector; electrically tied to exposed fin for low-inductance, high-current routing and heatsinking.
3 (Source)	Reference return	Common reference for gate drive and current sensing; connects to ground or low-side switch source in half-bridge topologies.
4 (Fin)	Drain thermal/electrical extension	Exposed copper pad soldered to PCB pour; provides primary thermal path (R_th(ch-C) = 1.43 °C/W) and reduces drain loop inductance.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.4–2.5 V ensures robust turn-on with 3.3 V/5 V MCU GPIOs without external level shifters.
Low R_DS(on) at 4.5 V	8.6 mΩ max enables high-efficiency operation in 5 V gate-drive systems such as automotive body controllers.
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control modules and ADAS power supplies.
Repetitive avalanche rated	Withstands 37 A / 137 mJ unclamped inductive energy events, eliminating need for external snubbers in relay replacement circuits.
Pb-free lead plating	Pure Sn finish complies with EU RoHS Directive and supports lead-free reflow soldering per IR60-00-3 profile (260°C, ≤10 s).

Applications

Automotive Motor Control	Industrial DC-DC Converters
Use Scenario: Driving 12 V brushed DC motors in power seats, HVAC blowers, and window lift modules. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 60–90 A peak currents during motor stall and reversal. Use Value: 8.6 mΩ R_DS(on) at 4.5 V gate drive minimizes heat generation in sealed enclosures, extending system lifetime beyond 10,000 cycles.	Use Scenario: Primary-side switch in isolated 48 V-to-12 V DC-DC converters for server power distribution units. IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) hard-switched power transistor with fast fall time (8–20 ns) to reduce switching losses. Use Value: 135 nC total gate charge enables efficient drive with low-power gate drivers, lowering overall converter control IC BOM cost.
On-Board Charger (OBC) Input Stage	EV Auxiliary Power Module
Use Scenario: AC rectification and PFC stage switching in 3.3 kW single-phase on-board chargers. IC Role / Device Role / Timing Role: Boost converter switch operating with 40 V V_DSS margin above 340 V DC bus, leveraging avalanche rating for transient clamping. Use Value: 1.43 °C/W channel-to-case resistance allows direct mounting to aluminum heatsink, achieving <95°C case temperature at full load without forced air.	Use Scenario: 12 V auxiliary supply regulation in battery electric vehicles, powering lighting, infotainment, and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, requiring low Q_GD/Q_GS ratio for ZVS optimization. Use Value: 26 nC gate-to-drain charge (Q_GD) and 13 nC gate-to-source charge (Q_GS) support clean zero-voltage switching transitions at >200 kHz.

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 12 V brushed DC motors in power seats, HVAC blowers, and window lift modules.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 60–90 A peak currents during motor stall and reversal.

Use Value: 8.6 mΩ R_DS(on) at 4.5 V gate drive minimizes heat generation in sealed enclosures, extending system lifetime beyond 10,000 cycles.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V DC-DC converters for server power distribution units.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) hard-switched power transistor with fast fall time (8–20 ns) to reduce switching losses.

Use Value: 135 nC total gate charge enables efficient drive with low-power gate drivers, lowering overall converter control IC BOM cost.

On-Board Charger (OBC) Input Stage

EV Auxiliary Power Module

Use Scenario: AC rectification and PFC stage switching in 3.3 kW single-phase on-board chargers.

IC Role / Device Role / Timing Role: Boost converter switch operating with 40 V V_DSS margin above 340 V DC bus, leveraging avalanche rating for transient clamping.

Use Value: 1.43 °C/W channel-to-case resistance allows direct mounting to aluminum heatsink, achieving <95°C case temperature at full load without forced air.

Use Scenario: 12 V auxiliary supply regulation in battery electric vehicles, powering lighting, infotainment, and ADAS sensors.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, requiring low Q_GD/Q_GS ratio for ZVS optimization.

Use Value: 26 nC gate-to-drain charge (Q_GD) and 13 nC gate-to-source charge (Q_GS) support clean zero-voltage switching transitions at >200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.6 mΩ @ 10 V; PowerFLAT 5x6 package; higher current, lower R_DS(on), but larger footprint and no AEC-Q101 certification.	Targeted at industrial UPS and solar inverters where automotive qualification is not required.	Select when higher current headroom and lower conduction loss outweigh AEC-Q101 compliance and TO-252 board space constraints.
IRF1404ZPBF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V; TO-220 package; lacks logic-level drive (V_GS(th) = 2.0–4.0 V) and AEC-Q101 rating.	Suitable for non-automotive 12 V power supplies and battery management systems with gate drivers.	Choose only if gate drive voltage ≥10 V is available and automotive qualification is unnecessary; TO-220 requires through-hole assembly and larger heatsink area.

Compared with STL220N4F7AG and IRF1404ZPBF, NP90N04VDG-E1-AY uniquely balances AEC-Q101 compliance, logic-level gate drive, TO-252 surface-mount compatibility, and 90 A DC rating - making it optimal for space- and reliability-constrained automotive power stages where gate drive simplicity and qualification are mandatory.

Availability

NP90N04VDG-E1-AY is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, on-board charger input stages, and EV auxiliary power modules requiring stable component supply across multi-year production cycles.

Supply support for NP90N04VDG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive SoCs.

NP90N04VDG-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control, body electronics, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for NP90N04VDG-E1-AY?

The NP90N04VDG-E1-AY is rated for ±90 A DC drain current at T_C = 25°C. This rating assumes proper PCB copper area and thermal management per the TO-252 package's R_th(ch-C) = 1.43 °C/W specification. At elevated case temperatures, derating applies - e.g., ~55 A at T_C = 100°C - as shown in the Safe Operating Area curve of the D19791EJ1V0DS datasheet.

Is NP90N04VDG-E1-AY suitable for logic-level gate drive from a 3.3 V microcontroller?

Yes, NP90N04VDG-E1-AY supports logic-level drive: its gate threshold voltage V_GS(th) is specified from 1.4 V to 2.5 V, and R_DS(on)2 = 8.6 mΩ max is guaranteed at V_GS = 4.5 V and I_D = 35 A. While 3.3 V is below the 4.5 V test condition, the low V_GS(th) ensures strong enhancement; however, full 90 A capability requires ≥4.5 V gate drive per datasheet characterization.

Does NP90N04VDG-E1-AY have avalanche capability, and how is it specified?

Yes, NP90N04VDG-E1-AY is rated for repetitive avalanche operation: I_AR = 37 A and E_AR = 137 mJ, tested at T_ch ≤ 150°C with R_G = 25 Ω. This capability is validated per AEC-Q101 stress test conditions and allows safe operation during inductive load switching without external snubbers in automotive relay-replacement designs.

What is the thermal resistance from channel to case (R_th(ch-C)) for NP90N04VDG-E1-AY, and how does it impact heatsinking?

NP90N04VDG-E1-AY has R_th(ch-C) = 1.43 °C/W, measured from silicon channel to the TO-252 drain tab (Pin 2 and Fin). This low value means that for every watt dissipated, the junction rises only 1.43°C above the case temperature - enabling effective passive cooling when the drain tab is soldered to ≥250 mm² of 2 oz copper with thermal vias, supporting >70 W continuous power in typical automotive ambient conditions.

Is NP90N04VDG-E1-AY Pb-free and RoHS compliant?

Yes, NP90N04VDG-E1-AY uses pure Sn (tin) lead plating and is explicitly marked "Pb-free" in the datasheet. It complies with the EU RoHS Directive, and its recommended reflow profile (IR60-00-3) specifies ≤0.2 wt.% chlorine in rosin flux and a peak temperature ≤260°C for ≤10 seconds - fully aligned with lead-free manufacturing requirements.

NP90N04VDG-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta), 105W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252

NP90N04VDG-E1-AY FAQ

1.How can I place an order for NP90N04VDG-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP90N04VDG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP90N04VDG-E1-AY reliable?

The price and inventory of NP90N04VDG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N04VDG-E1-AY is usually 5 days.

3.What payment methods are accepted for NP90N04VDG-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N04VDG-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP90N04VDG-E1-AY?

NP90N04VDG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP90N04VDG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP90N04VDG-E1-AY?

For technical support, including NP90N04VDG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N04VDG-E1-AY requirements.

6.How does Aetrix verify that NP90N04VDG-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP90N04VDG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N04VDG-E1-AY meets industry standards.

7.What is the process for return or replacement of NP90N04VDG-E1-AY?

All NP90N04VDG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N04VDG-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP90N04VDG-E1-AY part is unused and in its original packaging.

Return procedure for NP90N04VDG-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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