My Inquiry
My Account
Renesas NP90N04VLG-E1-AY
- Part No.:
- NP90N04VLG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP90N04VLG-E1-AY.pdf
- Description:
- MOSFET N-CH 40V 90A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NP90N04VLG-E1-AY from Renesas Electronics is an AEC-Q101 qualified N-channel power MOSFET designed for high-current automotive switching applications. It delivers RDS(on) = 4.0 mΩ max at VGS = 10 V / ID = 45 A, supports ±90 A DC drain current, and features built-in gate protection diode and logic-level gate drive compatibility. It is optimized for motor control, DC-DC converters, and battery disconnect circuits in under-hood environments.
For engineers reviewing the NP90N04VLG-E1-AY datasheet, NP90N04VLG-E1-AY pinout, NP90N04VLG-E1-AY application, or NP90N04VLG-E1-AY equivalent, key selection criteria include its 40 V VDSS, low RDS(on) at 4.5 V gate drive, TO-252 package thermal performance (Rth(ch-C) = 1.43 °C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its gate threshold voltage (VGS(th) = 1.4–2.5 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting. The integrated gate protection diode guards against ESD but does not replace external transient suppression in high-noise automotive systems.
The device exhibits Ciss = 4600 pF typ. and QG = 90–135 nC, supporting efficient PWM operation up to several hundred kHz in synchronous rectification and H-bridge topologies. Its repetitive avalanche rating (IAR = 37 A, EAR = 137 mJ) provides robustness against inductive load switching transients when used with appropriate gate resistance (RG = 25 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump surges. |
| RDS(on)1 | 4.0 mΩ max @ VGS = 10 V, ID = 45 A - Enables <1 W conduction loss at 70 A continuous, critical for thermal management in compact modules. |
| RDS(on)2 | 8.6 mΩ max @ VGS = 4.5 V, ID = 35 A - Ensures reliable turn-on with standard 5 V logic outputs or automotive MCU GPIOs. |
| ID(DC) | ±90 A - Supports high-power loads such as starter relays, HVAC blowers, and EPS motor phases without parallel devices. |
| Tch max | 175 °C - Allows operation in under-hood ambient temperatures up to 125 °C with proper heatsinking. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including temperature cycling, HTRB, and UHAST. |
| Rth(ch-C) | 1.43 °C/W - Enables >70 W power dissipation with modest case-to-heatsink thermal interface (e.g., 0.5 °C/W interface + 10 °C/W heatsink). |
Pinout & Package
NP90N04VLG-E1-AY is housed in a TO-252 (MP-3ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The package weighs typ. 0.27 g and features pure Sn (lead-free) plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Gate | Control electrode | Receives gate drive signal; requires external series resistor (e.g., 10–25 Ω) to damp ringing and limit peak current during switching. |
| 2. Drain | Main current output terminal | Connected to high-side load or power rail; electrically tied to metal tab (fin) for low-inductance, low-resistance path to PCB copper pour. |
| 3. Source | Main current return terminal | Reference node for gate drive; must be routed with low inductance to minimize switching overshoot and ensure stable VGS control. |
| 4. Fin (Drain) | Exposed drain pad | Primary thermal path to PCB; requires ≥200 mm² of 2-oz copper pour with ≥6 thermal vias for optimal Rth(ch-A) reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate driver ICs in 5 V MCU-based designs. |
| Built-in gate protection diode | ESD protection diode between gate and source (per datasheet equivalent circuit); reduces risk of gate oxide failure during handling but not sufficient for system-level ESD. |
| Super low RDS(on) | 4.0 mΩ max at 10 V ensures <0.2 W conduction loss at 7 A, enabling high-efficiency 12 V bus switching in space-constrained modules. |
| High avalanche capability | Rated for 37 A repetitive avalanche current and 137 mJ energy, allowing safe operation in inductive load circuits without snubbers in many cases. |
| AEC-Q101 qualification | Validated per JESD22-A108 and JESD22-A110, confirming suitability for automotive powertrain, chassis, and body electronics applications. |
Applications
| Automotive Motor Control | 12 V Battery Disconnect |
|---|---|
|
Use Scenario: Driving brushed DC motors in power seats, sunroofs, and HVAC actuators in passenger vehicles. IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor direction and speed via PWM at 1–20 kHz. Use Value: Low RDS(on) minimizes heat generation during continuous 30–60 A stall currents, extending module lifetime in sealed enclosures. |
Use Scenario: Isolating auxiliary battery banks (e.g., camper, trailer) from main vehicle battery during engine-off periods. IC Role / Device Role / Timing Role: Bidirectional blocking switch activated by BCM or BMS to prevent parasitic drain and enable jump-start capability. Use Value: 40 V VDSS withstands ISO 7637-2 pulse 5a (load dump up to 60 V), while ±90 A rating handles cold-cranking surge currents. |
| DC-DC Converter Primary Switch | Electric Power Steering (EPS) Phase Leg |
|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter supplying infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch operating at 300–500 kHz with tight duty-cycle control. Use Value: Low QG (90–135 nC) and fast switching (td(off) = 74–148 ns) reduce switching losses and improve light-load efficiency. |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motor (typically 20–40 A RMS). IC Role / Device Role / Timing Role: Low-side switch in each phase leg, requiring precise dead-time control and avalanche ruggedness. Use Value: Repetitive avalanche rating (137 mJ) absorbs energy from motor back-EMF during short-circuit or overcurrent events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | 40 V, RDS(on) = 2.2 mΩ @ 10 V, TO-263 package, AEC-Q101 qualified | Lower RDS(on) but larger footprint and higher gate charge (QG = 170 nC) | Preferred where ultra-low conduction loss justifies larger board area and slower switching; not drop-in due to different package and pinout. |
| IRF1404ZLPbF | 40 V, RDS(on) = 4.7 mΩ @ 10 V, TO-220AB package, industrial grade (not AEC-Q101) | Larger through-hole package, no automotive qualification, higher RDS(on) | Suitable for cost-sensitive non-automotive industrial switching; requires rework for automotive use due to missing AEC-Q101 validation. |
Compared with STL220N4LF6AG and IRF1404ZLPbF, the NP90N04VLG-E1-AY offers balanced performance: TO-252 footprint enables compact layout, AEC-Q101 compliance ensures automotive deployment readiness, and 8.6 mΩ RDS(on) at 4.5 V supports direct MCU drive-making it optimal for space- and qualification-constrained automotive modules.
Availability
NP90N04VLG-E1-AY is available at Aetrix Electronics and suitable for automotive motor control, 12 V battery management, and DC-DC converter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for NP90N04VLG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.
The NP90N04VLG-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis control units.
FAQ
What is the maximum continuous drain current rating for NP90N04VLG-E1-AY?
The NP90N04VLG-E1-AY is rated for ±90 A DC drain current at TC = 25°C. Actual usable current depends on PCB layout, heatsinking, and ambient temperature; derating is required above 25°C case temperature per the datasheet's power dissipation curve. For sustained 70 A operation, a thermal interface resistance ≤0.7 °C/W is recommended to maintain Tch < 150°C.
Is NP90N04VLG-E1-AY suitable for 5 V logic-level gate drive?
Yes, the NP90N04VLG-E1-AY is explicitly characterized for logic-level operation: RDS(on)2 = 8.6 mΩ max at VGS = 4.5 V and ID = 35 A confirms full enhancement with standard 5 V microcontroller outputs. Its VGS(th) range (1.4–2.5 V) ensures reliable turn-on even with marginal gate drive margins.
Does NP90N04VLG-E1-AY have built-in ESD protection?
Yes, the NP90N04VLG-E1-AY integrates a gate-to-source protection diode as shown in the datasheet's equivalent circuit. This diode provides basic ESD immunity during handling but is not intended to protect against system-level transients-external TVS diodes and gate resistors remain necessary in automotive environments per ISO 10605.
What is the thermal resistance from channel to case for NP90N04VLG-E1-AY?
The channel-to-case thermal resistance (Rth(ch-C)) of NP90N04VLG-E1-AY is 1.43 °C/W, measured under standard JEDEC conditions. This value assumes full soldering of the exposed drain pad (Pin 4) to a minimum 200 mm² copper area with ≥6 thermal vias-achieving this interface is essential to realize the rated 105 W power dissipation at TC = 25°C.
Is NP90N04VLG-E1-AY qualified for automotive applications?
Yes, the NP90N04VLG-E1-AY is AEC-Q101 qualified, as stated in its datasheet features section and confirmed by Renesas' product documentation. This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and unbiased highly accelerated stress testing (UHAST), validating its suitability for automotive power electronics.
NP90N04VLG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 105W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
NP90N04VLG-E1-AY FAQ
1.How can I place an order for NP90N04VLG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP90N04VLG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP90N04VLG-E1-AY reliable?
The price and inventory of NP90N04VLG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N04VLG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP90N04VLG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N04VLG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP90N04VLG-E1-AY?
NP90N04VLG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP90N04VLG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP90N04VLG-E1-AY?
For technical support, including NP90N04VLG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N04VLG-E1-AY requirements.
6.How does Aetrix verify that NP90N04VLG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP90N04VLG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N04VLG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP90N04VLG-E1-AY?
All NP90N04VLG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N04VLG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP90N04VLG-E1-AY part is unused and in its original packaging.
Return procedure for NP90N04VLG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NP90N04VLG-E1-AY Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
