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Renesas NP90N04VUG-E1-AY
- Part No.:
- NP90N04VUG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP90N04VUG-E1-AY.pdf
- Description:
- MOSFET N-CH 40V 90A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:2,808
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Product details
Overview
NP90N04VUG-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET designed for high-current automotive switching applications. It delivers 90 A DC drain current, 4.0 mΩ max RDS(on) at VGS = 10 V and ID = 45 A, 175°C channel temperature rating, and TO-252 (MP-3ZP) surface-mount package - enabling robust motor control and DC-DC converter primary-side switching.
For engineers reviewing the NP90N04VUG-E1-AY datasheet, NP90N04VUG-E1-AY pinout, NP90N04VUG-E1-AY application, or NP90N04VUG-E1-AY equivalent, key selection criteria include its low on-resistance under high-temperature operation, repetitive avalanche capability (37 A / 137 mJ), and automotive-grade reliability validation per AEC-Q101.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) and fast switching in high-power DC loads. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on with standard 3.3 V or 5 V logic-level drivers when used with appropriate gate drive strength.
The device integrates a body diode with 0.9–1.5 V forward voltage at 90 A and 40 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal resistance from channel to case is 1.43°C/W, enabling high-power dissipation when mounted on thermally enhanced PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail systems |
| RDS(on) max | 4.0 mΩ @ VGS = 10 V, ID = 45 A - Enables <1 W conduction loss at 50 A continuous current |
| ID(DC) | ±90 A - Supports high-current motor drivers and starter solenoid interfaces |
| QG | 90–135 nC - Determines required gate driver peak current for <100 ns switching transitions |
| Tch max | 175°C - Allows operation in under-hood environments without derating below 150°C ambient |
| EAR | 137 mJ - Specifies energy-handling capability during inductive load switching transients |
| Ciss | 5000–7500 pF - Impacts gate drive power and EMI filtering requirements in high-frequency PWM |
Pinout & Package
NP90N04VUG-E1-AY is housed in a TO-252 (MP-3ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The package weighs typ. 0.27 g and features pure Sn (Pb-free) lead plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal | Receives gate drive signal; requires ≥10 V for full enhancement and minimal RDS(on) |
| 2: Drain | Main current output | Connected to high-side switch node or inductive load return; electrically tied to metal tab |
| 3: Source | Main current return | Reference node for gate drive and current sensing; forms common source path with internal body diode cathode |
| 4: Fin (Drain) | Thermal & electrical extension | Exposed metal pad soldered to PCB copper pour - provides primary thermal path and low-inductance drain connection |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including engine control modules and EPS |
| 175°C channel rating | Supports sustained operation in high-ambient under-hood locations without thermal shutdown |
| Super low RDS(on) | Reduces conduction losses by >30% vs. comparable 40 V MOSFETs, improving system efficiency in 12 V/24 V DC-DC converters |
| Repetitive avalanche rated | Enables reliable operation in inductive switching without external snubbers in motor drive H-bridges |
| Low Ciss & QG | Minimizes gate drive power and enables faster switching with standard 1 A gate drivers |
Applications
| Automotive Motor Control | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current brushed DC motor driver in electric power steering (EPS) or HVAC blower modules. IC Role / Device Role / Timing Role: Main high-side or low-side switching element in half-bridge configuration, handling bidirectional 60–90 A peak currents. Use Value: Low RDS(on) minimizes heat generation during continuous duty cycles; AEC-Q101 qualification ensures long-term reliability in vibration-prone environments. |
Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converter for ADAS camera or radar module power supply. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 200–500 kHz PWM frequency with tight dead-time control. Use Value: Low QG and Ciss reduce switching losses; 40 V VDSS provides margin over 12 V nominal rail with load dump transients. |
| Industrial Power Supply Output Stage | Automotive Lighting Driver |
Use Scenario: Secondary-side synchronous rectifier or OR-ing FET in industrial 24 V/48 V telecom power supplies. IC Role / Device Role / Timing Role: Low-loss unidirectional current path replacing Schottky diodes in high-efficiency LLC resonant converters. Use Value: Body diode VF of 0.9–1.5 V at 90 A reduces forward conduction loss by ~40% vs. discrete Schottky solutions. |
Use Scenario: High-side switch controlling LED headlamp arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled current regulator with integrated current-sense feedback via source degeneration. Use Value: 175°C channel rating supports sealed headlamp thermal environments; ±90 A rating allows parallel use for multi-string LED banks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V - higher current, lower RDS(on), DFN5x6 package | Requires larger gate drive current; better suited for high-frequency, high-efficiency server VRMs | Select when board space permits larger footprint and gate drive can support 200+ nC QG |
| IRF1404ZLPBF | 40 V, 180 A, RDS(on) = 3.8 mΩ @ 10 V - TO-220AB package, non-automotive grade | Lacks AEC-Q101 qualification; higher Rth(ch-A) limits ambient temperature range | Acceptable for industrial motor drives where automotive qualification is not mandated |
Compared with STL220N4F7AG and IRF1404ZLPBF, NP90N04VUG-E1-AY offers optimal balance of automotive qualification, thermal performance in TO-252, and gate drive compatibility - making it preferred for space-constrained, high-reliability automotive power stages where 90 A DC capability suffices.
Availability
NP90N04VUG-E1-AY is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter primary switching, and industrial power supply output stages requiring stable component supply and long-lifecycle support.
Supply support for NP90N04VUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
NP90N04VUG-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control, chassis, and body electronics.
FAQ
What is the maximum continuous drain current rating for NP90N04VUG-E1-AY?
The NP90N04VUG-E1-AY is rated for ±90 A DC drain current at TC = 25°C. This rating assumes proper PCB thermal design with the exposed drain tab soldered to a minimum 10 cm² copper area. At elevated case temperatures, current must be derated per the datasheet's safe operating area curve - e.g., ~65 A at TC = 100°C. The NP90N04VUG-E1-AY maintains stable RDS(on) up to 175°C channel temperature.
Is NP90N04VUG-E1-AY qualified for automotive applications?
Yes, NP90N04VUG-E1-AY is AEC-Q101 qualified and rated for "High Quality" applications per Renesas' quality grading system. It is approved for use in automotive powertrain, chassis, and body electronics - including electric power steering, HVAC actuators, and lighting control modules - where reliability under vibration, thermal cycling, and extended temperature ranges is critical. The NP90N04VUG-E1-AY meets all stress tests defined in AEC-Q101 Rev D.
What is the gate threshold voltage range for NP90N04VUG-E1-AY?
The gate-to-source threshold voltage (VGS(th)) for NP90N04VUG-E1-AY is specified from 2.0 V to 4.0 V at ID = 250 μA and VDS = VGS. This range ensures consistent turn-on behavior across temperature and process variation. For reliable full enhancement, a gate drive of ≥10 V is recommended to achieve the specified 4.0 mΩ max RDS(on). The NP90N04VUG-E1-AY exhibits minimal VGS(th) drift over its −55°C to +175°C operating range.
Does NP90N04VUG-E1-AY include an integrated body diode?
Yes, NP90N04VUG-E1-AY incorporates a built-in body diode with forward voltage (VF(S-D)) of 0.9–1.5 V at IF = 90 A and VGS = 0 V. Its reverse recovery time is 40 ns with 48 nC Qrr under specified test conditions (di/dt = 100 A/μs). This diode supports freewheeling and synchronous rectification functions in bridge configurations. The NP90N04VUG-E1-AY body diode is optimized for low loss and fast recovery in high-frequency switching applications.
What package type and thermal characteristics does NP90N04VUG-E1-AY use?
NP90N04VUG-E1-AY uses the TO-252 (MP-3ZP) surface-mount package with an exposed drain pad. Its channel-to-case thermal resistance is 1.43°C/W, enabling efficient heat transfer to the PCB when the drain tab is soldered to a large copper pour. Channel-to-ambient resistance is 125°C/W in free-air conditions. The NP90N04VUG-E1-AY package supports Pb-free reflow per J-STD-020, with peak temperature ≤260°C for ≤10 seconds.
NP90N04VUG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 105W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
NP90N04VUG-E1-AY FAQ
1.How can I place an order for NP90N04VUG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP90N04VUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP90N04VUG-E1-AY reliable?
The price and inventory of NP90N04VUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N04VUG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP90N04VUG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N04VUG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP90N04VUG-E1-AY?
NP90N04VUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP90N04VUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP90N04VUG-E1-AY?
For technical support, including NP90N04VUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N04VUG-E1-AY requirements.
6.How does Aetrix verify that NP90N04VUG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP90N04VUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N04VUG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP90N04VUG-E1-AY?
All NP90N04VUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N04VUG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP90N04VUG-E1-AY part is unused and in its original packaging.
Return procedure for NP90N04VUG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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