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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP90N055VDG-E1-AY

Name: NP90N055VDG-E1-AY
Brand: Renesas
SKU: NP90N055VDG-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP90N055VDG-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NP90N055VDG-E1-AY.pdf

Description:: MOSFET N-CH 55V 90A TO252

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Product details

Overview

NP90N055VDG-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET designed for high-current automotive switching applications. It delivers ±90 A DC drain current, 55 V drain-source voltage rating, and ultra-low on-resistance of 6.0 mΩ max at V_GS = 10 V and I_D = 45 A - enabling efficient high-power motor control and DC-DC conversion in engine management systems.

For engineers reviewing the NP90N055VDG-E1-AY datasheet, NP90N055VDG-E1-AY pinout, NP90N055VDG-E1-AY application, or NP90N055VDG-E1-AY equivalent, this device is selected for demanding automotive subsystems requiring logic-level gate drive compatibility (V_GS(th) = 1.4–2.5 V), robust avalanche capability (E_AR = 111 mJ), and TO-252 thermal performance (R_th(ch-C) = 1.43 °C/W).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching. Its dual R_DS(on) specification - 6.0 mΩ @ 10 V and 10.5 mΩ @ 4.5 V - confirms true logic-level operation suitable for 3.3 V/5 V microcontroller gate drivers without level-shifting circuitry.

The device integrates a body diode with 0.9–1.5 V forward voltage at 90 A and exhibits tightly controlled dynamic parameters: Q_G = 90–135 nC, t_d(off) = 76–152 ns, and C_iss = 4600 pF typical - supporting high-frequency synchronous rectification and PWM-based power stages up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - supports 48 V automotive battery architectures with margin against load-dump transients.
I_D(DC)	±90 A - enables single-device implementation in high-power BLDC motor phases or starter solenoid drivers.
R_DS(on)1	6.0 mΩ max @ V_GS = 10 V, I_D = 45 A - reduces conduction loss to ≤27 W at 90 A, easing thermal design.
R_DS(on)2	10.5 mΩ max @ V_GS = 4.5 V, I_D = 35 A - ensures reliable turn-on with standard 5 V logic outputs.
E_AR	111 mJ - withstands repetitive inductive energy spikes in relay/snubberless solenoid circuits without derating.
R_th(ch-C)	1.43 °C/W - allows >70 W continuous dissipation with modest heatsinking in TO-252 footprint.
Q_G	90–135 nC - balances switching speed and gate driver power requirements for 100–500 kHz operation.

Pinout & Package

NP90N055VDG-E1-AY is housed in a surface-mount TO-252 (MP-3ZP) package with exposed drain pad for thermal and electrical performance. The 4-pin configuration features integrated fin (Drain) for enhanced heat transfer and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control input	Receives logic-level gate drive; threshold voltage 1.4–2.5 V enables direct MCU interface.
2. Drain	Main current path output	Connected to high-side switch node or inductive load return; tied to exposed metal tab for thermal conduction.
3. Source	Reference and current return	Serves as power ground reference for gate drive and current sensing; low-inductance layout critical for EMI control.
4. Fin (Drain)	Thermal & electrical extension	Exposed copper pad soldered to PCB thermal plane; electrically identical to Pin 2, providing parallel current path and <1.5 °C/W channel-to-case resistance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for external gate drivers in 5 V automotive ECUs.
Ultra-low R_DS(on)	6.0 mΩ max at 10 V enables >97% efficiency in 12 V/40 A DC-DC stages at full load.
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, HTRB, and UIS stress tests.
Robust body diode	1.5 V max V_F(S-D) at 90 A supports freewheeling in half-bridge motor drives without external Schottky.
Low gate charge	135 nC max Q_G reduces gate driver power consumption and enables faster PWM edge rates.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed, high-current switching of multi-point fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization with precise 1–5 ms pulse width modulation. Use Value: 10.5 mΩ R_DS(on) at 4.5 V ensures full turn-on using standard 5 V ECU output pins; 200 A pulse rating handles inrush during cold-start conditions.	Use Scenario: PWM-controlled bidirectional drive for cabin air blower motors in automatic climate control modules. IC Role / Device Role / Timing Role: Half-bridge low-side switch enabling variable-speed fan operation up to 15,000 RPM. Use Value: 111 mJ avalanche energy rating absorbs back-EMF during rapid deceleration; TO-252 thermal performance sustains 90 A peak without forced cooling.
12 V/48 V Dual-Battery DC-DC Converter	Electric Power Steering (EPS) Phase Leg
Use Scenario: Synchronous rectification in high-efficiency buck-boost converters linking legacy 12 V and new 48 V vehicle networks. IC Role / Device Role / Timing Role: High-current synchronous FET operating at 200–300 kHz with tight dead-time control. Use Value: 4600 pF C_iss and 90 nC Q_G minimize switching losses while maintaining gate drive simplicity; 55 V rating covers worst-case 48 V transient overshoot.	Use Scenario: One leg of a three-phase inverter driving brushless torque-assist motor in column-mounted EPS systems. IC Role / Device Role / Timing Role: High-reliability power switch handling 60–90 A phase current with fault-tolerant short-circuit capability. Use Value: AEC-Q101 qualification and 175 °C channel temperature rating ensure operation under hood temperatures up to 125 °C ambient; R_th(ch-C) = 1.43 °C/W enables compact heatsink integration.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of multi-point fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization with precise 1–5 ms pulse width modulation.

Use Value: 10.5 mΩ R_DS(on) at 4.5 V ensures full turn-on using standard 5 V ECU output pins; 200 A pulse rating handles inrush during cold-start conditions.

Use Scenario: PWM-controlled bidirectional drive for cabin air blower motors in automatic climate control modules.

IC Role / Device Role / Timing Role: Half-bridge low-side switch enabling variable-speed fan operation up to 15,000 RPM.

Use Value: 111 mJ avalanche energy rating absorbs back-EMF during rapid deceleration; TO-252 thermal performance sustains 90 A peak without forced cooling.

12 V/48 V Dual-Battery DC-DC Converter

Electric Power Steering (EPS) Phase Leg

Use Scenario: Synchronous rectification in high-efficiency buck-boost converters linking legacy 12 V and new 48 V vehicle networks.

IC Role / Device Role / Timing Role: High-current synchronous FET operating at 200–300 kHz with tight dead-time control.

Use Value: 4600 pF C_iss and 90 nC Q_G minimize switching losses while maintaining gate drive simplicity; 55 V rating covers worst-case 48 V transient overshoot.

Use Scenario: One leg of a three-phase inverter driving brushless torque-assist motor in column-mounted EPS systems.

IC Role / Device Role / Timing Role: High-reliability power switch handling 60–90 A phase current with fault-tolerant short-circuit capability.

Use Value: AEC-Q101 qualification and 175 °C channel temperature rating ensure operation under hood temperatures up to 125 °C ambient; R_th(ch-C) = 1.43 °C/W enables compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 220 A, R_DS(on) = 2.2 mΩ @ 10 V; DFN8 5×6 mm package; no AEC-Q101 certification stated in public datasheet.	Higher current capacity but larger footprint and unverified automotive qualification; better suited for industrial UPS than ECU space-constrained designs.	Select when higher peak current (>150 A) and lower R_DS(on) outweigh qualification and package size constraints.
IXTP90N055T	55 V, 90 A, R_DS(on) = 6.5 mΩ @ 10 V; TO-220 package; AEC-Q101 qualified; higher R_th(ch-A) = 40 °C/W vs. 125 °C/W for NP90N055VDG.	Same voltage/current class but through-hole mounting and inferior thermal resistance; requires larger heatsink for equivalent power handling.	Choose only if board assembly uses through-hole processes or TO-220 mechanical retention is required over surface-mount reliability.

Compared with STL220N5LF8AG and IXTP90N055T, the NP90N055VDG-E1-AY uniquely combines AEC-Q101 compliance, TO-252 thermal efficiency (1.43 °C/W), and verified 4.5 V logic-level operation - making it the optimal choice for space- and qualification-constrained automotive power stages where gate drive simplicity and under-hood reliability are non-negotiable.

Availability

NP90N055VDG-E1-AY is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and 48 V DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for NP90N055VDG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The NP90N055VDG-E1-AY belongs to Renesas' automotive-qualified power MOSFET family, engineered specifically for high-reliability, high-current switching in engine management, chassis, and body electronics where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for NP90N055VDG-E1-AY?

The NP90N055VDG-E1-AY has a DC drain current rating of ±90 A at T_C = 25°C. This rating assumes proper PCB thermal management via the exposed drain pad (Pin 4). At elevated case temperatures, derating applies per the datasheet's total power dissipation curve - e.g., ~65 A at T_C = 100°C. The device also supports ±200 A pulsed current for ≤10 μs at 1% duty cycle.

Is NP90N055VDG-E1-AY qualified for automotive use?

Yes, NP90N055VDG-E1-AY is explicitly AEC-Q101 qualified per its datasheet and intended for automotive applications including engine control, transmission, and chassis systems. Its qualification covers stress tests such as high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS), confirming reliability under harsh under-hood conditions.

What is the gate threshold voltage range for NP90N055VDG-E1-AY?

The gate threshold voltage (V_GS(th)) for NP90N055VDG-E1-AY is specified as 1.4 V (min) to 2.5 V (max) at I_D = 250 μA and V_DS = V_GS. This low, tightly distributed threshold enables consistent turn-on with 3.3 V or 5 V logic-level signals and supports robust noise immunity in electrically noisy automotive environments.

Does NP90N055VDG-E1-AY include an integrated body diode?

Yes, NP90N055VDG-E1-AY incorporates a monolithic body diode with forward voltage V_F(S-D) = 0.9–1.5 V at I_F = 90 A and V_GS = 0 V. Its reverse recovery time (t_rr) is 38 ns typical and reverse recovery charge (Q_rr) is 45 nC - characteristics validated for freewheeling in half-bridge motor drives and synchronous rectification topologies.

What package type and lead finish does NP90N055VDG-E1-AY use?

NP90N055VDG-E1-AY uses the TO-252 (MP-3ZP) surface-mount package with an exposed drain pad (Pin 4) for thermal and electrical performance. Its lead finish is pure Sn (tin), Pb-free per RoHS, with marking "90N055 DG" on the top surface. The tape-and-reel packaging is 2500 units per reel, designated by the "-E1-AY" suffix.

NP90N055VDG-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 6mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta), 105W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252

NP90N055VDG-E1-AY FAQ

1.How can I place an order for NP90N055VDG-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP90N055VDG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP90N055VDG-E1-AY reliable?

The price and inventory of NP90N055VDG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N055VDG-E1-AY is usually 5 days.

3.What payment methods are accepted for NP90N055VDG-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N055VDG-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP90N055VDG-E1-AY?

NP90N055VDG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP90N055VDG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP90N055VDG-E1-AY?

For technical support, including NP90N055VDG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N055VDG-E1-AY requirements.

6.How does Aetrix verify that NP90N055VDG-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP90N055VDG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N055VDG-E1-AY meets industry standards.

7.What is the process for return or replacement of NP90N055VDG-E1-AY?

All NP90N055VDG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N055VDG-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP90N055VDG-E1-AY part is unused and in its original packaging.

Return procedure for NP90N055VDG-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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