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Renesas NP90N06VLK-E1-AY
- Part No.:
- NP90N06VLK-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP90N06VLK-E1-AY.pdf
- Description:
- ABU / MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:608
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Product details
Overview
NP90N06VLK-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET in TO-252(MP-3ZP) package, rated for 60 V VDSS, 90 A ID(DC), and 5.3 mΩ RDS(on) at VGS = 10 V and ID = 45 A. It delivers low gate charge (QG = 63–95 nC), high pulsed current capability (ID(pulse) = ±360 A), and is engineered for automotive high-current switching applications including motor control and DC-DC conversion.
For engineers reviewing the NP90N06VLK-E1-AY datasheet, NP90N06VLK-E1-AY pinout, NP90N06VLK-E1-AY application, or NP90N06VLK-E1-AY equivalent, key selection considerations include its AEC-Q101 qualification, 1.02 °C/W channel-to-case thermal resistance, 4000 pF typical input capacitance, body diode forward voltage of 0.9–1.5 V, and suitability for high-efficiency 12 V/24 V automotive power stages.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in automotive-grade power conversion. Its gate threshold voltage range (1.5–2.5 V) ensures robust turn-on under battery-voltage variation, while the 125 °C/W channel-to-ambient thermal resistance mandates heatsink-assisted operation in continuous-duty scenarios.
The device integrates a co-packaged body diode with 40 ns reverse recovery time and 45 nC Qrr, enabling synchronous rectification support in buck converters and reducing external freewheeling diode requirements in H-bridge motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V battery rails with margin. |
| ID(DC) | 90 A - Continuous drain current rating at TC = 25°C, supporting high-power loads like HVAC blowers or EPS actuators. |
| RDS(on)1 | 5.3 mΩ max - Low on-resistance at 10 V gate drive reduces conduction loss to ≤43 W at 90 A, critical for thermal management. |
| QG | 63–95 nC - Gate charge determines driver strength requirement; enables efficient 100 kHz+ switching with standard gate drivers. |
| Rth(ch-C) | 1.02 °C/W - Enables 147 W power dissipation with minimal case-to-heatsink temperature rise, simplifying thermal design. |
| VGS(th) | 1.5–2.5 V - Threshold voltage window ensures reliable turn-on across temperature and manufacturing spread in 3.3 V/5 V logic-driven systems. |
| Ciss | 4000 pF typ - Input capacitance impacts gate drive energy and EMI; supports stable operation with standard RC snubbers. |
Pinout & Package
NP90N06VLK-E1-AY uses the TO-252(MP-3ZP) surface-mount package (Renesas code PRSS0004ZP-A), with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current PCB routing and mechanical robustness in automotive vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to exposed metal tab; must be soldered to large copper pour for thermal conduction and low-inductance high-current return. |
| Gate (G) | Control electrode | High-impedance input requiring low-inductance gate loop layout; sensitive to ESD-requires TVS protection per Renesas handling guidelines. |
| Source (S) | Reference node for gate drive and current sensing | Provides common reference for gate driver ICs and shunt-based current monitoring; ties to power ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling, humidity, and mechanical shock-enables use in engine bay and chassis-mounted modules without derating. |
| Low RDS(on) at 4.5 V | 8.2 mΩ max enables direct drive from 5 V microcontrollers in auxiliary power supplies, eliminating level-shifting circuitry. |
| Repetitive avalanche rated | 33 A IAR / 108 mJ EAR supports inductive load switching without external clamping in motor phase-leg designs. |
| Pb-free & RoHS compliant | Pure Sn lead plating meets automotive environmental standards and eliminates tin whisker risk in long-life vehicle applications. |
| Body diode with low Qrr | 45 nC reverse recovery charge minimizes switching loss during freewheeling, improving efficiency in synchronous rectifier topologies. |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-side/low-side switching in 3-phase EPS motor inverters operating at 12–48 V bus voltage. IC Role / Device Role / Timing Role: Power switch in half-bridge leg delivering up to 90 A peak phase current with <60 ns turn-off delay. Use Value: 5.3 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 8 mΩ MOSFETs, lowering heatsink mass and enabling compact EPS module packaging. | Use Scenario: Primary-side switch in 48 V-to-12 V bidirectional buck-boost converters for 48 V mild-hybrid architectures. IC Role / Device Role / Timing Role: Main power transistor handling 90 A DC current with 100 kHz PWM switching and 40 ns body diode trr. Use Value: 4000 pF Ciss and 63 nC QG enable efficient zero-voltage switching (ZVS) implementation, achieving >95% conversion efficiency at full load. |
| Engine Cooling Fan Control | Onboard Charger (OBC) Auxiliary Supplies |
Use Scenario: PWM-controlled high-current fan driver in engine cooling systems with duty-cycle modulation up to 100%. IC Role / Device Role / Timing Role: Single-ended switch managing 90 A DC load with thermal shutdown margin via 175°C Tch rating. Use Value: 1.02 °C/W Rth(ch-C) allows direct mounting to aluminum chassis, eliminating discrete heatsinks and reducing BOM count by one component. | Use Scenario: Isolated auxiliary supply switch in OBC units powering gate drivers, MCU, and sensors from high-voltage battery. IC Role / Device Role / Timing Role: 60 V-rated primary switch in flyback or forward converter operating with 400 V input transients. Use Value: 60 V VDSS with 20 V VGS rating supports reinforced isolation gate drive schemes while surviving load-dump transients up to 65 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF8AG | 60 V, 220 A, 2.2 mΩ RDS(on), TO-220FP package, no AEC-Q101 certification | Higher current rating but larger footprint and non-automotive qualification; requires external thermal interface | Select when higher peak current headroom is needed and AEC-Q101 is not mandated. |
| IRF1407PBF | 75 V, 100 A, 7.5 mΩ RDS(on), TO-220 package, industrial-grade only | Wider VDSS margin but higher on-resistance and no automotive qualification; lacks repetitive avalanche rating | Choose for cost-sensitive 24 V industrial motor drives where AEC-Q101 and low RDS(on) are secondary. |
Compared with STL220N6LF8AG and IRF1407PBF, NP90N06VLK-E1-AY offers the optimal balance of AEC-Q101 compliance, 5.3 mΩ conduction loss in compact TO-252, and integrated avalanche ruggedness-making it the preferred choice for space-constrained, thermally demanding automotive power stages where qualification and reliability are mandatory.
Availability
NP90N06VLK-E1-AY is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC conversion, and engine cooling fan control requiring stable component supply across extended vehicle lifecycles.
Supply support for NP90N06VLK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
NP90N06VLK-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, designed specifically for high-reliability, high-current switching in engine, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current rating for NP90N06VLK-E1-AY?
NP90N06VLK-E1-AY is rated for 90 A continuous drain current (ID(DC)) at case temperature TC = 25°C. At elevated case temperatures, derating applies per the datasheet's total power dissipation curve-e.g., ~60 A at TC = 100°C. This rating assumes proper PCB copper area and thermal vias to maintain the 1.02 °C/W channel-to-case thermal resistance specified in the Absolute Maximum Ratings table.
Is NP90N06VLK-E1-AY qualified for automotive applications?
Yes, NP90N06VLK-E1-AY is explicitly AEC-Q101 qualified, as confirmed in the "Features" section and "Ordering Information" table of the official Renesas datasheet R07DS1318EJ0200. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock-validating its suitability for under-hood and chassis-mounted automotive power modules.
What is the gate-to-source threshold voltage range for NP90N06VLK-E1-AY?
The gate-to-source threshold voltage (VGS(th)) for NP90N06VLK-E1-AY is specified as 1.5 V (min), 2.1 V (typ), and 2.5 V (max) at VDS = VGS and ID = 250 µA. This range ensures consistent turn-on behavior across process variation and temperature extremes from −55°C to +175°C, supporting reliable operation with 3.3 V or 5 V logic-level gate drivers in automotive ECUs.
Does NP90N06VLK-E1-AY include a body diode, and what are its key parameters?
Yes, NP90N06VLK-E1-AY integrates a built-in body diode with forward voltage VF(S-D) = 0.9–1.5 V at IF = 90 A and reverse recovery time trr = 40 ns. Its reverse recovery charge Qrr is 45 nC, enabling efficient freewheeling in inductive switching applications such as motor drives and DC-DC converters without requiring an external Schottky diode.
What package type and lead finish does NP90N06VLK-E1-AY use?
NP90N06VLK-E1-AY uses the TO-252(MP-3ZP) surface-mount package (Renesas package code PRSS0004ZP-A) with pure tin (Sn) lead plating. This Pb-free, RoHS-compliant finish eliminates tin whisker risk and supports reflow soldering profiles used in automotive electronics manufacturing, as documented in the "Ordering Information" section of the Renesas datasheet.
NP90N06VLK-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.3mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 147W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3ZP)
NP90N06VLK-E1-AY FAQ
1.How can I place an order for NP90N06VLK-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP90N06VLK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP90N06VLK-E1-AY reliable?
The price and inventory of NP90N06VLK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP90N06VLK-E1-AY is usually 5 days.
3.What payment methods are accepted for NP90N06VLK-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP90N06VLK-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP90N06VLK-E1-AY?
NP90N06VLK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP90N06VLK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP90N06VLK-E1-AY?
For technical support, including NP90N06VLK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP90N06VLK-E1-AY requirements.
6.How does Aetrix verify that NP90N06VLK-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP90N06VLK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP90N06VLK-E1-AY meets industry standards.
7.What is the process for return or replacement of NP90N06VLK-E1-AY?
All NP90N06VLK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP90N06VLK-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP90N06VLK-E1-AY part is unused and in its original packaging.
Return procedure for NP90N06VLK-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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