Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. NSF040120L3A0Q

Name: NSF040120L3A0Q
Brand: Nexperia USA Inc.
SKU: NSF040120L3A0Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NSF040120L3A0Q

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NSF040120L3A0Q.pdf

Description:: SIC MOSFET / 40MOHM / 1200V / TO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:412

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NSF040120L3A0 from Nexperia is a 1200 V, 40 mΩ N-channel silicon carbide (SiC) MOSFET in a TO-247-3L through-hole package, designed for high-voltage switching in power conversion stages. It delivers 46 A continuous drain current at Tc = 100 °C, exhibits 40–60 mΩ R_DS(on) at 15 V_GS and 25 °C, and features fast switching (t_d(off) = 22 ns, E_off = 160 µJ) with robust intrinsic body diode recovery (t_rr = 31 ns). It is deployed in photovoltaic inverters where high efficiency and thermal stability are critical.

For engineers reviewing the NSF040120L3A0 datasheet, NSF040120L3A0 pinout, NSF040120L3A0 application, or NSF040120L3A0 equivalent, key selection criteria include its 1200 V blocking capability, SiC-specific gate drive requirements (−5 V to +15 V), junction temperature-dependent R_DS(on) behavior, and low C_oss (136 pF) enabling high-frequency hard-switching topologies.

Technical Context

This SiC MOSFET employs a planar trench-gate structure optimized for high-voltage operation and minimal dynamic losses. Its gate threshold voltage (V_GS(th) = 2.77 V typ.) and low internal gate resistance (R_G(int) = 2.3 Ω) support stable turn-on/turn-off control under high dV/dt conditions typical in 800 V DC-link systems.

The device integrates a fast, robust intrinsic body diode with V_SD = 4.4 V at 40 A and Q_r = 217 nC, enabling reliable third-quadrant conduction without external anti-parallel diodes in bridge-leg configurations used in motor drives and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables use in 1000 V-class DC systems (e.g., EV charging stations) with 20 % voltage margin.
R_DS(on)	40 mΩ @ V_GS = 15 V, I_D = 40 A, T_j = 25 °C - Low conduction loss at rated current; increases to 53 mΩ at 175 °C.
I_D	46 A @ T_c = 100 °C - Continuous current rating limited by thermal resistance (R_th(j-c) = 0.4 K/W).
E_off	160 µJ @ V_DD = 800 V, I_D = 40 A, R_G(ext) = 2.2 Ω - Enables >100 kHz switching in LLC resonant converters with low loss penalty.
t_rr	31 ns - Fast reverse recovery reduces commutation losses and EMI in bidirectional power flow applications.
C_oss	136 pF - Low output capacitance minimizes energy loss during zero-voltage switching transitions.
V_GS(th)	2.77 V typ. - Ensures clear distinction between on/off states while maintaining noise immunity in industrial environments.

Pinout & Package

NSF040120L3A0 uses the TO-247-3L (SOT429-2) plastic through-hole package with heatsink mounting and a single mounting hole. The metal mounting base (mb) is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 - G	Gate	Control input; requires −5 V to +15 V drive; minimum recommended V_GS(on) = 13 V for full R_DS(on) performance.
2 - D	Drain	Main high-side power terminal; electrically tied to mounting base; carries full load current and withstands 1200 V transients.
3 - S	Source	Power return path and reference for gate drive; must be routed with low inductance to minimize switching overshoot.

Key Features

Feature	Design Value
SiC material platform	Enables 1200 V operation with lower specific on-resistance than silicon, reducing die size and thermal footprint.
R_DS(on) temperature stability	Increases only ~33 % from 25 °C to 175 °C (40 → 53 mΩ), enabling predictable conduction loss across wide ambient ranges.
Fast intrinsic body diode	V_SD = 4.4 V and t_rr = 31 ns allow reliable synchronous rectification in two-level inverters without external diodes.
Low gate charge	Q_G(tot) = 95 nC and Q_GD = 30 nC reduce driver power requirement and enable faster edge rates with standard gate drivers.
Robust safe operating area	RBSOA rated up to 1200 V and 160 A peak supports short-circuit withstand time >2 µs in motor drive fault conditions.

Applications

Photovoltaic Inverters

E-Vehicle Charging Infrastructure

Use Scenario: DC-to-AC conversion stage in string or central solar inverters operating at 1000 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in three-phase NPC or T-type inverter topology handling 40 A RMS output current.

Use Value: 40 mΩ R_DS(on) and low E_off reduce conduction and switching losses, improving system efficiency from 98.2 % to 98.6 % at 50 kW.

Use Scenario: Primary switching element in 15–22 kW AC/DC on-board chargers (OBC) and 150+ kW DC fast-charging modules.

IC Role / Device Role / Timing Role: Active clamp or phase-leg switch in dual-active-bridge (DAB) or totem-pole PFC front-end.

Use Value: 1200 V rating and 160 A peak current capability support 1000 V battery architectures with headroom for transient overvoltage.

Motor Drives

Uninterruptible Power Supplies

Use Scenario: Inverter leg in industrial servo drives powering 30–50 kW permanent magnet motors.

IC Role / Device Role / Timing Role: Bidirectional switching device managing regenerative braking via third-quadrant conduction of intrinsic body diode.

Use Value: 31 ns t_rr and 217 nC Q_r minimize reverse recovery loss and associated voltage spikes during PWM commutation.

Use Scenario: Output inverter stage in double-conversion online UPS systems delivering clean 230 V AC from 800 V DC bus.

IC Role / Device Role / Timing Role: High-efficiency switching device in H-bridge configuration supporting 10 ms overload capability and zero-transfer-time switchover.

Use Value: Junction temperature range (−55 °C to +175 °C) and stable R_DS(on) ensure reliability during extended runtime and thermal cycling in data center environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040120K (Wolfspeed)	Same 1200 V/40 mΩ rating but TO-247-4L package with Kellogg source connection; R_th(j-c) = 0.35 K/W vs. 0.4 K/W.	Better thermal performance enables higher current density in space-constrained designs; requires 4-pin PCB layout.	Select when board layout allows 4-pin footprint and junction temperature margin is critical below 150 °C.
STW40N120K5 (STMicroelectronics)	1200 V/42 mΩ, TO-247-3L; higher R_DS(on) (42 mΩ min), higher Q_G (110 nC), and slower t_rr (55 ns).	Lower switching speed increases E_off by ~35 %; suitable for <80 kHz operation where gate drive simplicity is prioritized.	Select when cost sensitivity outweighs efficiency targets and existing gate driver can handle higher Q_G.

Compared with C3M0040120K, NSF040120L3A0 offers identical voltage/current specs in a 3-pin footprint but trades 0.05 K/W thermal resistance for layout compatibility; versus STW40N120K5, it delivers measurable efficiency gain in high-frequency PFC stages due to lower Q_GD and t_rr, despite similar price point.

Availability

NSF040120L3A0 is available at Aetrix Electronics and suitable for photovoltaic inverters, e-vehicle charging infrastructure, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for NSF040120L3A0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-performance, high-reliability discrete and logic devices, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

The NSF series targets high-voltage power conversion with SiC MOSFETs engineered specifically for industrial-grade efficiency, ruggedness, and thermal stability in demanding 1200 V applications.

FAQ

What gate drive voltage is required for reliable operation?

The NSF040120L3A0 requires a gate-source voltage of −5 V to 0 V for turn-off and +15 V for turn-on; operation below +13 V is not recommended as it results in elevated R_DS(on) and increased conduction loss. Gate drive must limit dV/dt to ≤50 V/ns to avoid spurious turn-on due to Miller effect.

Can this device replace silicon IGBTs in existing 1200 V inverters?

Yes-its 1200 V V_DS rating and 46 A continuous current match common 1200 V/35–50 A IGBTs, but gate drive must be updated to accommodate lower Q_G and faster switching. Layout changes may be needed to suppress higher dI/dt-induced EMI and reduce parasitic inductance in gate and power loops.

How does the intrinsic body diode perform under hard commutation?

The body diode achieves t_rr = 31 ns and Q_r = 217 nC at 40 A, with soft recovery characteristics confirmed by low voltage overshoot (<150 V) in clamped inductive switching tests. It sustains repetitive third-quadrant conduction up to 55 A continuous source current at T_c = 25 °C.

Is NSF040120L3A0 qualified for automotive applications?

No-this device is not AEC-Q101 qualified and lacks automotive-specific stress testing, failure mode analysis, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in EV traction inverters or onboard chargers requires formal qualification per customer requirements.

NSF040120L3A0Q Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NSF040120L3A0Q FAQ

1.How can I place an order for NSF040120L3A0Q through Aetrix?

Please submit a Request for Quotation (RFQ) for NSF040120L3A0Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSF040120L3A0Q reliable?

The price and inventory of NSF040120L3A0Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSF040120L3A0Q is usually 5 days.

3.What payment methods are accepted for NSF040120L3A0Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSF040120L3A0Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSF040120L3A0Q?

NSF040120L3A0Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSF040120L3A0Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSF040120L3A0Q?

For technical support, including NSF040120L3A0Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSF040120L3A0Q requirements.

6.How does Aetrix verify that NSF040120L3A0Q is sourced from the original manufacturer or authorized distributors?

All NSF040120L3A0Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSF040120L3A0Q meets industry standards.

7.What is the process for return or replacement of NSF040120L3A0Q?

All NSF040120L3A0Q units undergo pre-shipment inspection (PSI). If there is an issue with NSF040120L3A0Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSF040120L3A0Q part is unused and in its original packaging.

Return procedure for NSF040120L3A0Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…