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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. NSF080120L4A0Q

Name: NSF080120L4A0Q
Brand: Nexperia USA Inc.
SKU: NSF080120L4A0Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSF080120L4A0Q

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: NSF080120L4A0Q.pdf

Description:: NSF080120L4A0/SOT8071/TO247-4L

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Product details

Overview

NSF080120L4A0 from Nexperia is a 1200 V, 80 mΩ N-channel silicon carbide (SiC) MOSFET in a TO-247-4L package with Kelvin source terminal, designed for high-voltage, high-efficiency power conversion stages in industrial systems. It delivers 25 A continuous drain current at T_c = 100 °C, exhibits 80 mΩ R_DS(on) at V_GS = 15 V and T_j = 25 °C, and features fast switching (t_d(off) = 14 ns, E_off = 41 µJ) and robust body diode recovery (t_rr = 6 ns). It is deployed in photovoltaic inverters where high blocking voltage and low conduction loss are critical.

For engineers reviewing the NSF080120L4A0 datasheet, NSF080120L4A0 pinout, NSF080120L4A0 application, or NSF080120L4A0 equivalent, key selection criteria include its 1200 V V_DS, Kelvin-source–enabled gate drive stability, temperature-stable R_DS(on), low Q_GD/Q_G ratio for hard-switching resilience, and verified 175 °C maximum junction temperature operation.

Technical Context

This SiC MOSFET uses a planar trench-gate structure optimized for high-voltage ruggedness and minimal dynamic losses. Its 4-pin TO-247-4L configuration separates the power source (Pin 2) from the Kelvin source (Pin 3), eliminating source inductance impact on gate control and enabling precise turn-off timing and reduced voltage overshoot during commutation.

The device integrates a fast, robust intrinsic body diode with 4.4 V forward drop at I_S = 20 A and V_GS = −5 V, supporting bidirectional energy transfer in totem-pole PFC and three-level NPC topologies. Its R_th(j-c) of 0.68 K/W enables high-power dissipation (183 W at T_c = 25 °C) with direct heatsink mounting via the metal base (Pin 1, drain-connected).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables use in 1000 V DC bus systems with 20 % safety margin for overvoltage transients.
R_DS(on)	80 mΩ @ V_GS = 15 V, I_D = 20 A, T_j = 25 °C - Low conduction loss supports >99 % efficiency in 10–50 kW inverters.
I_D (cont.)	25 A @ T_c = 100 °C - Sustains full-rated current under industrial ambient thermal conditions without derating.
E_off	41 µJ @ V_DD = 800 V, I_D = 20 A, R_G(ext) = 2.2 Ω - Enables 100 kHz+ switching in motor drives without excessive thermal burden.
t_rr	6 ns - Minimizes reverse recovery charge (Q_r = 79 nC), reducing shoot-through risk and diode losses in bridge-leg operation.
R_th(j-c)	0.68 K/W - Allows direct thermal coupling to heatsinks, simplifying thermal design for high-power density modules.
V_GS(th)	2.77 V typ. @ I_D = 10 mA - Ensures reliable enhancement-mode turn-on while maintaining noise immunity above 1.7 V.

Pinout & Package

NSF080120L4A0 is housed in a TO-247-4L (SOT8071-1) plastic through-hole package with isolated mounting base. The metal tab (Pin 1) is internally connected to the drain and serves as both electrical connection and thermal interface to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (mb)	Drain / Mounting Base	Electrically tied to drain; provides low-inductance, low-thermal-resistance path to heatsink; must be insulated from PCB ground plane.
2 (S)	Power Source	Carries full load current to source rail; connects to main PCB trace; subject to high di/dt and voltage drop.
3 (KS)	Kelvin Source	Provides gate driver reference point only; carries negligible current; eliminates source inductance effect on gate loop stability.
4 (G)	Gate	Controls channel conduction; requires low-inductance layout to KS pin; driven with −5 V/15 V for optimal switching performance.

Key Features

Feature	Design Value
Kelvin source terminal	Enables stable gate control under high di/dt by decoupling gate return path from power source current path.
Temperature-stable R_DS(on)	R_DS(on) increases only ~37 % from 25 °C to 175 °C (80 → 110 mΩ), ensuring predictable conduction loss across operating range.
Fast intrinsic body diode	6 ns t_rr and 79 nC Q_r allow zero-voltage switching (ZVS) in resonant converters and reduce dead-time sensitivity.
Low Q_GD/Q_G ratio	16/52 nC = 0.31 - Improves Miller immunity and enables faster, more controllable turn-off in hard-switched topologies.
175 °C max junction temperature	Supports operation in sealed enclosures or high-ambient environments without forced air cooling in many industrial applications.

Applications

Photovoltaic Inverters

E-Vehicle Charging Stations

Use Scenario: DC–AC conversion stage in string or central solar inverters handling up to 1500 V DC input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg; operates at 16–25 kHz with ZVS-assisted transitions.

Use Value: 1200 V rating accommodates 1500 V PV arrays; low R_DS(on) reduces thermal stress on heatsinks; fast t_rr prevents cross-conduction during phase-leg commutation.

Use Scenario: Primary-side switching in 11–22 kW AC–DC on-board chargers (OBC) and 150–350 kW DC fast-charging (DCFC) front-end rectifiers.

IC Role / Device Role / Timing Role: Active switch in totem-pole PFC and dual-active-bridge (DAB) isolation stages; switched at 65–100 kHz.

Use Value: Kelvin source ensures clean gate drive under high dv/dt; 41 µJ E_off enables high-frequency operation without excessive loss; 175 °C T_j(max) supports compact packaging.

Motor Drives

Uninterruptible Power Supplies

Use Scenario: Inverter output stage in industrial servo drives and HVAC compressors rated for 400–690 V AC line input.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/SiC hybrid or full-SiC inverter modules; operated with 5–10 µs dead time.

Use Value: 25 A continuous current at T_c = 100 °C sustains peak torque delivery; fast tr/tf (13/8 ns) minimizes switching transition losses; robust body diode handles regenerative braking current.

Use Scenario: Bidirectional DC–AC inverter stage in double-conversion UPS systems delivering 10–40 kVA with <1 % THD.

IC Role / Device Role / Timing Role: Full-bridge switch in high-frequency PWM inverter; modulated using space-vector modulation (SVM) at 10–20 kHz.

Use Value: Low C_oss (74 pF) and Crss (4 pF) reduce capacitive turn-on loss; stable V_GS(th) ensures consistent channel activation across temperature; 1200 V rating covers 1000 V DC link with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065120K	Same 1200 V/65 mΩ rating but TO-247-3L; no Kelvin source; higher Q_GD (18 nC vs. 16 nC); R_th(j-c) = 0.75 K/W.	Lacks Kelvin source, limiting gate-loop stability in high-di/dt designs; less suitable for ultra-fast switching above 75 kHz.	Select when cost sensitivity outweighs need for enhanced gate control; verify gate driver loop inductance remains <3 nH.
ROHM SCT3080KL	1200 V/80 mΩ in TO-247-4L; slightly higher R_DS(on) at 175 °C (115 mΩ vs. 110 mΩ); lower E_off (32 µJ) but higher Q_G(tot) (62 nC).	Better turn-off loss but slower effective switching due to higher total gate charge; requires stronger gate driver (≥3 A peak).	Prefer for applications prioritizing E_off reduction over gate drive simplicity; confirm driver capability before substitution.

Compared with C3M0065120K, NSF080120L4A0 offers superior gate control fidelity and thermal performance; versus SCT3080KL, it trades marginal E_off increase for lower gate drive demand and tighter R_DS(on) temperature coefficient-critical for thermally constrained industrial enclosures.

Availability

NSF080120L4A0 is available at Aetrix Electronics and suitable for photovoltaic inverters, e-vehicle charging infrastructure, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for NSF080120L4A0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power semiconductors.

The NSF series targets high-efficiency, high-voltage power conversion in renewable energy and industrial automation, emphasizing rugged SiC MOSFETs with Kelvin-source packaging for next-generation switching performance.

FAQ

What gate drive voltage is recommended for NSF080120L4A0?

Nexperia specifies −5 V to 0 V for turn-off and +15 V for turn-on; operation below +13 V is not recommended due to increased R_DS(on) and thermal instability. The Kelvin source (Pin 3) must be connected directly to the gate driver's source reference, not to the power source trace.

How does the Kelvin source improve switching behavior?

The Kelvin source separates the gate return path from high-current source routing, eliminating voltage drop-induced gate threshold shift during high di/dt events. This maintains precise V_GS control, reduces turn-off delay variation, and suppresses parasitic oscillation in the gate loop-critical for stable 100 kHz+ operation.

Can NSF080120L4A0 replace silicon IGBTs in existing 1200 V designs?

Yes, with gate drive and layout modifications: the lower gate charge (52 nC vs. typical IGBT 200+ nC) allows faster switching, but requires reduced external gate resistance (≤2.2 Ω) and strict control of stray inductance. Thermal interface must accommodate higher power density due to lower R_th(j-c).

What is the maximum allowable case temperature for continuous operation?

The datasheet defines 100 °C as the maximum case temperature for 25 A continuous drain current. Derating begins linearly above this point, reaching zero current at 175 °C. At T_c = 25 °C, full 183 W power dissipation is supported, assuming proper heatsink mounting and thermal interface material.

NSF080120L4A0Q Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 20A, 15V

Vgs(th) (Max) @ Id:: 2.9V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 15 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1335 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 183W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

NSF080120L4A0Q FAQ

1.How can I place an order for NSF080120L4A0Q through Aetrix?

Please submit a Request for Quotation (RFQ) for NSF080120L4A0Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSF080120L4A0Q reliable?

The price and inventory of NSF080120L4A0Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSF080120L4A0Q is usually 5 days.

3.What payment methods are accepted for NSF080120L4A0Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSF080120L4A0Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSF080120L4A0Q?

NSF080120L4A0Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSF080120L4A0Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSF080120L4A0Q?

For technical support, including NSF080120L4A0Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSF080120L4A0Q requirements.

6.How does Aetrix verify that NSF080120L4A0Q is sourced from the original manufacturer or authorized distributors?

All NSF080120L4A0Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSF080120L4A0Q meets industry standards.

7.What is the process for return or replacement of NSF080120L4A0Q?

All NSF080120L4A0Q units undergo pre-shipment inspection (PSI). If there is an issue with NSF080120L4A0Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSF080120L4A0Q part is unused and in its original packaging.

Return procedure for NSF080120L4A0Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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