Nexperia USA Inc. NX1029XH

Overview

NX1029XH from Nexperia is a complementary N/P-channel Trench MOSFET pair in a single SOT666 package, rated for 60 V (N-ch) and –50 V (P-ch), with continuous drain currents of 330 mA and –170 mA respectively. It features logic-level gate drive compatibility, fast switching, and integrated ESD protection (2 kV HBM on N-ch, 1 kV on P-ch), enabling compact load switching and level-shifting in space-constrained DC-DC converters.

For engineers reviewing the NX1029XH datasheet, NX1029XH pinout, NX1029XH application, or NX1029XH equivalent, this dual-channel discrete solution supports high-density power management where low R_DS(on), thermal efficiency, and bidirectional signal control are critical - especially in portable battery-powered systems and USB-C PD interface circuits.

Technical Context

This device integrates two enhancement-mode MOSFETs - TR1 (N-channel) and TR2 (P-channel) - sharing a common SOT666 footprint but electrically isolated. Each channel operates independently with separate gate, source, and drain terminals, supporting synchronous rectification, half-bridge topologies, and bidirectional level translation without external biasing.

The N-channel exhibits R_DS(on) = 1.0 Ω (typ.) at V_GS = 10 V and I_D = 500 mA, while the P-channel delivers R_DS(on) = 4.5 Ω (typ.) at V_GS = –10 V and I_D = –100 mA. Both channels maintain stable threshold voltages (V_GS(th) = ±1.1–2.1 V) across –55 °C to 150 °C junction temperature range.

Key Specifications

Pinout & Package

SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height, with exposed drain pads for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMN2053LSD-13 and SI6926ADQ-T1-GE3, the NX1029XH uniquely balances 60 V capability, ultra-compact size, and verified dual-channel thermal performance - making it the only option among the three qualified for 48 V input converters in wearable form factors.

Availability

NX1029XH is available at Aetrix Electronics and suitable for USB-C PD implementations, portable load switching, mixed-voltage level translation, and low-power synchronous rectification requiring stable component supply and long-term production continuity.

Supply support for NX1029XH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

The NX1029XH belongs to Nexperia's TrenchMOS® small-signal complementary FET product line, engineered specifically for miniaturized power management in consumer, computing, and industrial edge electronics where board space and thermal headroom are severely limited.

FAQ

What is the maximum continuous drain current for each channel at 100 °C ambient?

At T_amb = 100 °C, the N-channel supports 210 mA and the P-channel supports –110 mA under standard FR4 PCB mounting (1 cm² drain pad). These values derive from thermal derating curves in Figure 2 and Table 5, assuming natural convection and no forced airflow.

Can NX1029XH be used in a half-bridge configuration?

Yes - its independent gate and drain terminals allow direct implementation as a high-side P-channel / low-side N-channel half-bridge. However, gate drive must account for level-shifting on the high-side (G2), and dead-time control is required to prevent shoot-through, as no internal logic or driver is integrated.

Is the SOT666 package lead-free and RoHS compliant?

Yes - the NX1029XH uses a lead-free, halogen-free, RoHS-compliant SOT666 package, qualified per JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and compatible with standard SnAgCu reflow profiles per Figure 31 in the datasheet.

Does the device include body diode conduction capability in both channels?

Yes - both channels feature intrinsic source-drain diodes with V_SD = 0.75 V (N-ch) and –0.85 V (P-ch) at 115 mA. These diodes support freewheeling in inductive loads and are characterized in Figures 19 and 28, confirming unidirectional conduction consistent with MOSFET physics.