Nexperia USA Inc. NX3008CBKV,115

Overview

NX3008CBKV from Nexperia is a complementary N/P-channel Trench MOSFET in a 6-pin SOT666 package, rated for ±30 V drain-source voltage and delivering 400 mA (N-ch) and −220 mA (P-ch) continuous drain current at 4.5 V gate drive. It integrates both channels in one ultra-small footprint for bidirectional switching, level shifting, and compact load-switching in space-constrained DC-DC converters and portable power rails.

For engineers reviewing the NX3008CBKV datasheet, NX3008CBKV pinout, NX3008CBKV application, or NX3008CBKV equivalent, key selection criteria include verified R_DS(on) values (1.0 Ω typ @ 4.5 V for N-ch, 2.8 Ω typ @ −4.5 V for P-ch), fast switching performance (t_d(on) ≤ 30 ns, t_d(off) ≤ 138 ns), ESD robustness (2 kV HBM), and thermal resistance (R_th(j-a) = 250 K/W per device on FR4).

Technical Context

This dual-channel MOSFET uses Trench MOSFET technology to achieve low threshold voltages (±0.6–1.1 V), enabling reliable turn-on from 1.8 V logic. Its complementary topology supports push-pull and bridge configurations without external bias networks.

The device features separate source and drain terminals for each channel (S1/G1/D1 for N-ch; S2/G2/D2 for P-ch), with no internal connection between channels-enabling independent control and flexible routing in level-shifting and load-switching topologies.

Key Specifications

Pinout & Package

SOT666 is a 6-lead, 0.5 mm pitch, ultra-flat surface-mount plastic package measuring 1.6 × 1.2 × 0.55 mm - optimized for high-density PCB layouts in wearables, IoT nodes, and portable medical devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMN2020LSD-13 and PMGD280UN,115, NX3008CBKV delivers superior current capability and lower R_DS(on) in the smallest available footprint-making it optimal for next-generation miniaturized power management where thermal density and layout area are critical constraints.

Availability

NX3008CBKV is available at Aetrix Electronics and suitable for portable medical monitors, wearable health sensors, and USB-C power delivery modules requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for NX3008CBKV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

NX3008CBKV belongs to Nexperia's TrenchMOS complementary FET product line-designed specifically for space- and power-constrained applications demanding dual-channel integration, low-voltage logic compatibility, and robust ESD tolerance.

FAQ

What is the maximum continuous drain current for each channel under standard PCB conditions?

The NX3008CBKV delivers 400 mA continuous drain current for the N-channel (TR1) and −220 mA for the P-channel (TR2) when mounted on an FR4 PCB with a 1 cm² drain pad at Tamb = 25 °C. Derating applies above 25 °C ambient, with N-ch dropping to 260 mA at 100 °C and P-ch to −140 mA under identical conditions.

Can the NX3008CBKV be driven directly by a 1.8 V microcontroller GPIO?

Yes-the N-channel has V_GS(th) as low as 0.6 V and R_DS(on) = 2.0 Ω typ at V_GS = 1.8 V, ensuring full enhancement. The P-channel requires gate drive relative to its source; a 1.8 V logic signal referenced to the P-ch source rail (e.g., via level-shifting or open-drain pull-down) can activate it, but direct 1.8 V GPIO-to-G2 is not sufficient without additional biasing.

How does the thermal performance compare between single-sided and enhanced-pad PCB mounting?

With a standard FR4 footprint, R_th(j-a) is 250 K/W per device. Adding a 1 cm² tin-plated copper pad under the drain terminals reduces R_th(j-a) to 280–320 K/W for individual channels and lowers junction temperature rise by ~18% at 400 mA, extending safe operating time in pulsed applications per Fig. 1 and Fig. 2.

Is the NX3008CBKV qualified for automotive applications?

No-NX3008CBKV is not AEC-Q101 qualified and is specified for industrial and consumer use only. Nexperia explicitly states in Section 15 that non-automotive qualified products are unsuitable for safety-critical or life-support systems. For automotive designs, consult Nexperia's AEC-Q101-compliant complementary FET portfolio (e.g., PSMN2R0-30YL).