Nexperia USA Inc. NX3008NBKSH

Overview

NX3008NBKSH from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for 30 V drain-source voltage, 350 mA continuous drain current per transistor at 25 °C, and 1.4 Ω R_DS(on) at V_GS = 4.5 V - optimized for low-side load switching and high-speed line driving in automotive and industrial control modules.

For engineers reviewing the NX3008NBKSH datasheet, NX3008NBKSH pinout, NX3008NBKSH application, or NX3008NBKSH equivalent, key selection criteria include AEC-Q101 qualification, 2 kV HBM ESD rating, fast switching (t_d(on) ≤ 30 ns, t_f ≤ 19 ns), low 0.9 V typical gate threshold, and thermal resistance of 390 K/W (junction-to-ambient, FR4 PCB).

Technical Context

This dual discrete MOSFET integrates two independent N-channel channels in a single 6-pin TSSOP6 package, with complementary pin assignment (D1/S1/G1 and D2/S2/G2) enabling independent control of two low-side loads. Each channel operates with trench-based silicon, delivering stable R_DS(on) over temperature (1.8 Ω max at 150 °C) and sub-1 V V_GS(th) for 1.8 V logic compatibility.

The device supports bidirectional source-drain diode conduction (V_SD = 0.85 V typ. at 350 mA), exhibits low gate charge (Q_G(tot) = 0.68 nC max), and maintains safe operating area up to 1.4 A peak drain current (10 µs pulse). Its 300 mW total power dissipation at 25 °C ambient is thermally managed via drain pad layout on FR4 PCB.

Key Specifications

Pinout & Package

SOT363 (SC-88 / TSSOP6) surface-mount plastic package: 6-lead, 0.65 mm pitch, 2.1 × 1.25 × 0.95 mm body, with exposed drain pads for thermal relief on FR4 PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel low-side switching applications.

Compared with NTJD4152P and DMP3025LSDQ, NX3008NBKSH uniquely balances AEC-Q101 compliance, 1.8 V logic compatibility, compact SOT363 size, and verified 2 kV ESD robustness - making it optimal for space-constrained automotive and industrial low-power switching where qualification and reliability are non-negotiable.

Availability

NX3008NBKSH is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, USB-C load management, and high-speed data line driving requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for NX3008NBKSH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.

The NX3008NBKSH belongs to Nexperia's TrenchMOS family - engineered specifically for low-voltage, low-power switching in automotive and industrial control systems where small size, fast switching, and qualification rigor are essential.

FAQ

Is NX3008NBKSH pin-compatible with other dual N-channel MOSFETs in SOT363?

Yes - NX3008NBKSH uses standard SOT363 (TSSOP6) pinout: Pin 1 = S1, Pin 2 = G1, Pin 3 = D2, Pin 4 = S2, Pin 5 = G2, Pin 6 = D1. This matches JEDEC SC-88 and common industry layouts including ON Semi's NTJD series and Diodes Inc.'s DMP series in same package, enabling direct PCB footprint reuse.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C per datasheet Section 8. For continuous operation at full 350 mA per channel, derating is required above 25 °C ambient: at 100 °C ambient, max continuous current drops to 230 mA (Table 5), and thermal resistance must be managed using ≥1 cm² drain pad on FR4 PCB to maintain safe operation.

Does NX3008NBKSH support 1.8 V logic-level gate drive?

Yes - with V_GS(th) ranging from 0.6 V to 1.1 V (typ. 0.9 V), NX3008NBKSH fully turns on at 1.8 V gate drive, achieving R_DS(on) ≤ 2.8 Ω at V_GS = 1.8 V and I_D = 10 mA (Table 7). This enables direct interface with ultra-low-voltage MCUs without gate boosting circuitry.

How does the dual configuration improve PCB layout efficiency compared to two discrete SOT23 devices?

The SOT363 package integrates both transistors in one 2.1 × 1.25 mm footprint - reducing board area by ~40% versus two SOT23-3 devices, cutting solder joints by 4, and eliminating routing crosstalk between gate traces. Its symmetrical pinout also simplifies routing of independent gate signals and shared drain paths in compact control modules.