NXP Semiconductors NX3008NBKT,115

Overview

NX3008NBKT from Nexperia is a 30 V, 350 mA N-channel enhancement-mode Trench MOSFET in SOT416 (SC-75) package, designed for low-side switching in space-constrained applications. It features 1.0 Ω typical R_DS(on) at V_GS = 4.5 V, 0.9 V typical gate threshold voltage, and AEC-Q101 qualification for automotive use.

For engineers reviewing the NX3008NBKT datasheet, NX3008NBKT pinout, NX3008NBKT application, or NX3008NBKT equivalent, key selection criteria include low-voltage gate drive compatibility, fast switching performance (15 ns turn-on delay), thermal resistance of 360 K/W on FR4 with 1 cm² drain pad, and ESD robustness up to 2 kV HBM.

Technical Context

This N-channel MOSFET employs Trench MOSFET technology to achieve low R_DS(on) and fast switching with minimal gate charge (0.52 nC typical total Q_G). Its sub-1 V gate threshold enables direct interfacing with 1.8 V and 2.5 V logic controllers without level shifting.

The device operates across –55 °C to 150 °C junction temperature range and supports peak drain current up to 1.4 A in pulsed mode. Built-in source-drain diode exhibits 0.85 V typical forward voltage at 350 mA, supporting synchronous rectification in low-power DC-DC stages.

Key Specifications

Pinout & Package

SOT416 (SC-75) plastic surface-mounted package: ultra-small outline, 3-terminal, single-row lead frame with gull-wing leads. Dimensions: 1.7 mm × 1.4 mm × 0.5 mm (L × W × H); 0.95 mm lead pitch; drain-connected tab for thermal relief.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Compared with NX3008NBKT, DMN2004K-7 offers lower on-resistance but requires larger PCB area and lacks sub-1 V gate drive assurance, while PMZB260UN,115 matches the SOT416 footprint and AEC-Q101 status but trades 0.2 Ω higher R_DS(on) for broader low-voltage logic compatibility.

Availability

NX3008NBKT is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable medical equipment requiring stable component supply and long-term lifecycle support.

Supply support for NX3008NBKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.

The NX3008NBKT belongs to Nexperia's TrenchMOS portfolio, engineered specifically for low-voltage, high-efficiency switching in space- and power-constrained automotive and industrial systems.

FAQ

What is the maximum continuous drain current for NX3008NBKT at 100 °C ambient temperature?

The NX3008NBKT supports 230 mA continuous drain current at T_amb = 100 °C with V_GS = 4.5 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT416 package on standard FR4 PCBs and ensures safe operation within its 150 °C junction temperature limit. The NX3008NBKT maintains stable R_DS(on) performance up to this condition due to its Trench MOSFET structure.

Is NX3008NBKT suitable for driving inductive loads such as solenoids or relays?

Yes, NX3008NBKT is explicitly qualified for relay driver applications per its product profile. Its 30 V V_DS rating and built-in source-drain diode (V_SD = 0.85 V typ) provide flyback energy clamping. When used with appropriate snubbing or external freewheeling diodes, the NX3008NBKT reliably switches inductive loads up to 350 mA continuous current without voltage overshoot exceeding its breakdown limit.

Does NX3008NBKT require external gate resistors for stable switching?

No external gate resistor is mandatory for basic operation, but a 10 Ω series resistor is recommended to damp ringing and control dV/dt during fast transitions. The NX3008NBKT's low Q_G (0.52 nC) and small input capacitance (C_iss = 34 pF typ) allow clean switching with low-drive-strength MCUs; however, adding a gate resistor improves EMI performance and prevents oscillation in high-noise automotive environments where the NX3008NBKT is commonly deployed.

What is the thermal resistance from junction to ambient for NX3008NBKT on a standard FR4 PCB?

The NX3008NBKT has a typical R_th(j-a) of 440 K/W when mounted on an FR4 PCB with single-sided copper and standard footprint, and 360 K/W with a 1 cm² drain pad. These values are confirmed in Table 6 of the datasheet and define the thermal design boundary for continuous operation. For example, at 350 mA and 1.0 Ω R_DS(on), the NX3008NBKT dissipates 122.5 mW, resulting in ~44 °C junction-to-ambient rise on standard layout-well within its 150 °C T_j limit.

How does the AEC-Q101 qualification impact the use of NX3008NBKT in non-automotive applications?

AEC-Q101 qualification certifies the NX3008NBKT for extended temperature cycling, mechanical shock, and ESD robustness beyond standard industrial requirements. While intended for automotive use, this qualification provides enhanced reliability in harsh environments such as factory automation, outdoor IoT gateways, and medical equipment-making the NX3008NBKT a robust choice even outside automotive contexts. The NX3008NBKT's 150 °C T_j rating and 2 kV HBM ESD protection derive directly from this qualification.