Nexperia USA Inc. NX3008NBKV,115
- Part No.:
- NX3008NBKV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
NX3008NBKV,115.pdf
- Description:
- MOSFET 2N-CH 30V 0.4A SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:29,446
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Product details
Overview
NX3008NBKV from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, designed for low-side switching and high-speed line driving. It delivers 30 V VDS, 400 mA continuous drain current per transistor at 25 °C, and 1.0 Ω typical RDS(on) at VGS = 4.5 V - enabling efficient load switching in space-constrained portable electronics.
For engineers reviewing the NX3008NBKV datasheet, NX3008NBKV pinout, NX3008NBKV application, or NX3008NBKV equivalent, this device supports fast-switching relay drivers, low-voltage logic-level gate control, thermal-limited PCB layouts, and dual-channel independent load management with ESD-hardened inputs.
Technical Context
This dual discrete MOSFET integrates two independent N-channel channels in a single ultra-small SOT666 package (1.6 × 1.2 × 0.55 mm), sharing no internal connection between transistors. Each channel features trench-gate architecture optimized for low threshold voltage (0.6–1.1 V) and fast switching (td(on) ≤ 30 ns, tf ≤ 19 ns).
Thermal performance is defined by Rth(j-a) = 330 K/W (standard FR4 footprint) and Rth(j-sp) = 115 K/W, supporting operation up to 150 °C junction temperature. The device includes integrated source-drain diodes with VSD = 0.47–1.2 V at IS = 350 mA and 2 kV HBM ESD rating on all pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail switching and transient-tolerant industrial I/O interfaces |
| ID (continuous) | 400 mA per transistor at Tamb = 25 °C - suitable for LED drivers, sensor biasing, and microcontroller-peripheral switching |
| RDS(on) | 1.0 Ω typical at VGS = 4.5 V, ID = 350 mA - enables <100 mW conduction loss at rated current |
| VGS(th) | 0.6–1.1 V - ensures reliable turn-on from 1.8 V and 3.3 V logic without level-shifting |
| QG(tot) | 0.52–0.68 nC - minimizes gate drive power and supports >1 MHz PWM operation with low-RG |
| tf | 19 ns max - reduces switching transition time and associated shoot-through risk in half-bridge auxiliary stages |
| ESD Rating | 2000 V HBM - protects against handling damage during manual assembly and board-level integration |
Pinout & Package
Package: SOT666 - ultra-flat, 6-pin surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body height), 0.5 mm lead pitch, optimized for high-density PCB layouts and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source of TR1 | Low-impedance return path for first transistor; electrically isolated from S2 |
| 2 | Gate of TR1 | Logic-level input for independent control of TR1; ESD-protected |
| 3 | Drain of TR2 | High-side connection point for second transistor; thermally coupled to PCB pad |
| 4 | Source of TR2 | Return path for second transistor; isolated from S1 and all other terminals |
| 5 | Gate of TR2 | Independent logic-level input for TR2; no internal coupling to G1 |
| 6 | Drain of TR1 | Primary output node for TR1; shares thermal path with D2 via package substrate |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small SOT666 footprint | Reduces board area by >50% vs. SO-8 dual MOSFETs while maintaining full electrical isolation |
| Trench MOSFET architecture | Delivers lower RDS(on) and higher transconductance (gfs = 310 mS) than planar equivalents at same voltage rating |
| Low VGS(th) distribution | 0.6–1.1 V range ensures robust turn-on across process variation and temperature (–55 to 150 °C) |
| Integrated ESD protection | 2 kV HBM rating eliminates need for external TVS diodes in low-energy I/O paths |
| Thermally enhanced drain pads | Direct thermal path from D1/D2 to PCB copper enables 1090 mW total dissipation with proper layout |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relays in programmable logic controllers with 3.3 V microcontroller outputs. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; dual configuration allows independent activation of two relays. Use Value: 0.9 V typical VGS(th) ensures full enhancement at 3.3 V logic, while 1.0 Ω RDS(on) limits coil power loss to <450 mW at 400 mA. |
Use Scenario: Transmitting TTL/CMOS signals across 50 Ω traces in test equipment backplanes. IC Role / Device Role / Timing Role: Active pull-down stage for edge-rate control and signal termination. Use Value: 19 ns fall time and 30 ns turn-off delay enable clean 20+ MHz square-wave transmission without overshoot. |
| Low-Side Load Switch | Switching Power Supply Auxiliary Stage |
Use Scenario: Enabling/disabling power to USB peripherals in battery-powered handheld devices. IC Role / Device Role / Timing Role: Dual-channel load switch managing separate VBUS and sensor supply rails. Use Value: 2 kV ESD protection prevents latch-up during hot-plug events; 0.52 nC QG minimizes control-FET gate drive burden. |
Use Scenario: Synchronous rectification or bias supply switching in DC-DC converter auxiliary windings. IC Role / Device Role / Timing Role: Secondary-side switch in flyback or forward converter snubber circuits. Use Value: 30 V VDS rating safely handles reflected voltage spikes; 150 °C Tj(max) supports operation near main power stage heat sources. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | Higher RDS(on) (1.4 Ω typ), larger TSOP-6 package (3.0 × 1.6 mm), 20 V rating | Limited to ≤20 V systems; less suitable for 24 V industrial I/O | Select when 20 V rating suffices and board space allows larger footprint |
| AOB410L | Single-channel, TO-252 package, 30 V/4.5 A rating, 22 mΩ RDS(on) | Not pin-compatible; requires redesign for dual-channel function | Choose only when higher current per channel (>400 mA) and thermal margin are critical |
Compared with DMN2041LSD-13 and AOB410L, the NX3008NBKV uniquely balances ultra-compact size, 30 V capability, and dual-channel independence - making it optimal for space-constrained, multi-rail, logic-level switching where thermal density and layout efficiency are prioritized over raw current capacity.
Availability
NX3008NBKV is available at Aetrix Electronics and suitable for relay driver modules, portable instrumentation front-ends, and low-power IoT node power management requiring stable component supply and long-term manufacturability.
Supply support for NX3008NBKV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in MOSFETs, ESD protection, and automotive-qualified parts.
The NX3008NBKV belongs to Nexperia's TrenchMOS family - engineered specifically for space-efficient, low-voltage switching in consumer, computing, and industrial applications where miniaturization and logic-level compatibility are essential.
FAQ
Is NX3008NBKV qualified for automotive applications?
No. This device is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or automotive-grade qualification. For automotive use, select Nexperia's automotive-qualified equivalents such as the PMXB390UNE, which carries full AEC-Q101 certification and extended temperature support.
What is the maximum continuous drain current per transistor at 100 °C ambient?
The datasheet specifies 260 mA per transistor at Tamb = 100 °C and VGS = 4.5 V. This derating reflects thermal limitations of the SOT666 package on standard FR4 PCBs; actual current depends on copper area, airflow, and adjacent heat sources.
Can the two transistors be used in parallel to increase current handling?
No - the transistors are electrically isolated but not matched for parallel operation. Their VGS(th) tolerance (±0.25 V) and RDS(on) variation (±40%) would cause current imbalance. Parallel use is unsupported and may result in thermal runaway of the lower-threshold device.
Does NX3008NBKV include body diode reverse recovery charge (Qrr) data?
No. The datasheet does not specify Qrr, reverse recovery time (trr), or diode recovery characteristics. The source-drain diode is intended for clamping and freewheeling only - not for high-frequency synchronous rectification. Use external Schottky diodes if fast recovery is required.
NX3008NBKV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 15V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
NX3008NBKV,115 FAQ
1.How can I place an order for NX3008NBKV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for NX3008NBKV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX3008NBKV,115 reliable?
The price and inventory of NX3008NBKV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX3008NBKV,115 is usually 5 days.
3.What payment methods are accepted for NX3008NBKV,115?
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4.How is shipping managed for NX3008NBKV,115?
NX3008NBKV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NX3008NBKV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NX3008NBKV,115?
For technical support, including NX3008NBKV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX3008NBKV,115 requirements.
6.How does Aetrix verify that NX3008NBKV,115 is sourced from the original manufacturer or authorized distributors?
All NX3008NBKV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX3008NBKV,115 meets industry standards.
7.What is the process for return or replacement of NX3008NBKV,115?
All NX3008NBKV,115 units undergo pre-shipment inspection (PSI). If there is an issue with NX3008NBKV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX3008NBKV,115 part is unused and in its original packaging.
Return procedure for NX3008NBKV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NX3008NBKV,115 Tags

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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

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2N7002DW-7-F
Diodes Incorporated

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SSM6L56FE,LM
Toshiba Semiconductor and Storage

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SSM6N37FU,LF
Toshiba Semiconductor and Storage

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2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

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UM6K33NTN
Rohm Semiconductor

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DMG6602SVT-7
Diodes Incorporated

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EM6K34T2CR
Rohm Semiconductor

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UM6K34NTCN
Rohm Semiconductor

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DMG6601LVT-7
Diodes Incorporated
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