Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. NX3008NBKVL

Part No.:
NX3008NBKVL
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixNX3008NBKVL.pdf
Description:
MOSFET N-CH 30V 400MA TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,499

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NX3008NBK from Nexperia is a 30 V, 400 mA N-channel enhancement-mode Trench MOSFET in SOT23 package, designed for low-side switching in space-constrained automotive and industrial circuits. It features 1.0 Ω typical RDS(on) at VGS = 4.5 V, 0.9 V typical gate threshold voltage, and AEC-Q101 qualification for under-hood relay drivers and high-speed line interfaces.

For engineers reviewing the NX3008NBK datasheet, NX3008NBK pinout, NX3008NBK application, or NX3008NBK equivalent, key selection criteria include its 2 kV HBM ESD rating, 310 K/W junction-to-ambient thermal resistance on FR4, fast 11 ns rise time, and compatibility with 1.8 V–4.5 V logic-level gate drive in load-switching designs.

Technical Context

This discrete MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (0.52 nC typical total QG). Its 0.9 V VGS(th) enables reliable turn-on from 1.8 V microcontroller I/O, while the integrated source-drain diode supports bidirectional current paths in PWM-driven loads.

The device operates across –55 °C to 150 °C junction temperature, with normalized RDS(on) rising to 1.8× at 150 °C. Thermal derating follows a defined curve: continuous drain current drops to 250 mA at 100 °C ambient, and power dissipation falls to 350 mW at 25 °C ambient on standard FR4.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum blocking voltage for 24 V automotive rail and industrial 28 V systems
RDS(on) 1.0 Ω @ VGS = 4.5 V, ID = 350 mA, Tj = 25 °C - Enables <100 mW conduction loss at 350 mA
VGS(th) 0.9 V typ - Ensures full enhancement with 1.8 V GPIO without level-shifting
QG(tot) 0.52 nC - Supports >1 MHz switching with low gate-drive power in compact DC-DC or LED drivers
tr/tf 11 ns / 19 ns - Minimizes switching transition losses in high-frequency load control
ESD Rating 2000 V HBM - Eliminates need for external ESD protection in board-level assembly
Ptot 350 mW @ Tamb = 25 °C - Sustains 400 mA continuous current only with adequate PCB copper area (1 cm² drain pad)

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, 3-terminal configuration with tin-plated leads and standard FR4-compatible footprint.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control input requiring ≤0.52 nC charge for full enhancement; sensitive to ESD but protected to 2 kV HBM
2 S (Source) Reference node for gate drive; connects to system ground or low-side return path in load-switch configurations
3 D (Drain) High-current output terminal; requires 1 cm² copper pad on FR4 for rated 400 mA continuous operation

Key Features

Feature Design Value
Trench MOSFET architecture Delivers 1.0 Ω RDS(on) in SOT23 - 40% lower than planar equivalents at same current rating
AEC-Q101 qualification Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock testing
Low VGS(th) (0.6–1.1 V) Guarantees turn-on with 1.8 V logic; eliminates external level shifters in ultra-low-voltage MCU designs
Fast switching (tr = 11 ns) Reduces transition losses by >30% vs. comparable SOT23 MOSFETs in 500 kHz PWM applications
Integrated source-drain diode VSD = 0.85 V @ 350 mA enables freewheeling in inductive load circuits without external diode

Applications

Automotive Relay Driver Industrial Low-Side Load Switch

Use Scenario: Driving 12 V/24 V automotive relays in body control modules where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: N-channel low-side switch controlling relay coil current up to 400 mA with logic-level gate drive from MCU GPIO.

Use Value: Eliminates need for bipolar driver transistors or dedicated gate drivers; 0.9 V VGS(th) ensures robust turn-on even with battery droop to 9 V.

Use Scenario: Power gating of sensors, LEDs, or actuators in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: Discrete load switch enabling ON/OFF control with <1 µA off-state leakage and <100 mΩ effective on-resistance at 350 mA.

Use Value: Reduces BOM count by replacing dual-transistor or IC-based switches; 2 kV ESD rating prevents field failures during handling and assembly.

High-Speed Line Driver USB/Serial Interface Protection

Use Scenario: Driving short-haul RS-485 or CAN bus stub lines in industrial gateways where signal integrity demands fast edge rates.

IC Role / Device Role / Timing Role: Active termination switch toggling between active and high-Z states with 11 ns rise time and sub-10 ns propagation delay.

Use Value: Maintains signal fidelity up to 10 Mbps by minimizing transition distortion; low Ciss (34 pF) avoids capacitive loading on data lines.

Use Scenario: Overvoltage and reverse-polarity protection for USB VBUS or UART TX/RX lines in portable test equipment.

IC Role / Device Role / Timing Role: Reverse-blocking switch placed in series with supply or signal path, leveraging intrinsic body diode directionality and low RDS(on).

Use Value: Provides <100 mΩ forward path resistance and <1 µA reverse leakage - superior to Schottky diodes in low-drop, low-leakage protection schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LSD-13 RDS(on) = 0.75 Ω @ 4.5 V but larger TSOP-6 package (3.05 × 1.65 mm); no AEC-Q101 rating Better conduction loss but unsuitable for automotive qualification-critical designs Select when higher current (6 A) capability and lower RDS(on) outweigh package size and qualification needs
AO3400 VGS(th) = 1.0–2.0 V (wider spread); RDS(on) = 0.85 Ω @ 4.5 V; non-automotive grade Higher gate threshold increases risk of partial turn-on with 1.8 V logic; no ESD or AEC validation Choose only for cost-sensitive consumer applications where qualification and ESD immunity are not required

Compared with DMN3025LSD-13 and AO3400, NX3008NBK offers the smallest footprint (SOT23), guaranteed low-threshold operation for 1.8 V MCUs, and automotive-grade reliability - making it optimal for space-limited, safety-aware embedded switching where consistent turn-on and field robustness are mandatory.

Availability

NX3008NBK is available at Aetrix Electronics and suitable for automotive relay drivers, industrial low-side load switches, high-speed line drivers, and USB interface protection requiring stable component supply and long-term lifecycle support.

Supply support for NX3008NBK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade quality.

This device belongs to Nexperia's TrenchMOS portfolio - engineered specifically for low-voltage, high-speed switching in automotive body electronics and industrial control systems where small size, low gate charge, and AEC-Q101 compliance are essential.

FAQ

What is the maximum continuous drain current for NX3008NBK at 100 °C ambient temperature?

The maximum continuous drain current is 250 mA at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating accounts for thermal resistance limitations on standard FR4 PCBs without enhanced copper heatsinking. Operation above this current requires thermal simulation or increased copper area to maintain Tj ≤ 150 °C.

Does NX3008NBK require an external gate resistor for 5 V MCU drive?

No external gate resistor is required for basic switching, but a 10–47 Ω series resistor is recommended to dampen ringing and reduce EMI in layouts with >10 cm trace length. The device's low QG (0.52 nC) allows full turn-on with <100 ns delay using typical 5 V GPIO drivers without slew-rate limiting.

Can NX3008NBK be used in reverse polarity protection circuits?

Yes - its intrinsic body diode blocks reverse current when the drain is grounded and source is connected to the supply. With VSD = 0.85 V at 350 mA, it provides lower forward drop than most Schottky diodes in compact footprints, though it must be oriented correctly to exploit unidirectional conduction.

Is the SOT23 package lead-free and RoHS compliant?

Yes - NX3008NBK is manufactured in a lead-free, RoHS-compliant SOT23 package per Nexperia's product compliance documentation. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard reflow profiles including IPC/JEDEC J-STD-020 Rev. E.

NX3008NBKVL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.68 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
350mW (Ta), 1.14W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

NX3008NBKVL FAQ

1.How can I place an order for NX3008NBKVL through Aetrix?

Please submit a Request for Quotation (RFQ) for NX3008NBKVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NX3008NBKVL reliable?

The price and inventory of NX3008NBKVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX3008NBKVL is usually 5 days.

3.What payment methods are accepted for NX3008NBKVL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX3008NBKVL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NX3008NBKVL?

NX3008NBKVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NX3008NBKVL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NX3008NBKVL?

For technical support, including NX3008NBKVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX3008NBKVL requirements.

6.How does Aetrix verify that NX3008NBKVL is sourced from the original manufacturer or authorized distributors?

All NX3008NBKVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX3008NBKVL meets industry standards.

7.What is the process for return or replacement of NX3008NBKVL?

All NX3008NBKVL units undergo pre-shipment inspection (PSI). If there is an issue with NX3008NBKVL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NX3008NBKVL part is unused and in its original packaging.

Return procedure for NX3008NBKVL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NX3008NBKVL Tags

  • NX3008NBKVL
  • NX3008NBKVL PDF
  • NX3008NBKVL Datasheet
  • NX3008NBKVL Specifications
  • NX3008NBKVL Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. NX3008NBKVL
  • Buy NX3008NBKVL
  • NX3008NBKVL Price
  • NX3008NBKVL Distributor
  • NX3008NBKVL Supplier
  • NX3008NBKVL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER