Nexperia USA Inc. NX3008PBKS,115

Overview

NX3008PBKS from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for −30 V drain-source voltage, −200 mA continuous drain current per channel, and 2.8 Ω typical R_DS(on) at V_GS = −4.5 V. It serves as a high-side load switch or relay driver in automotive and industrial control circuits requiring fast switching and low-threshold operation.

For engineers reviewing the NX3008PBKS datasheet, NX3008PBKS pinout, NX3008PBKS application, or NX3008PBKS equivalent, this device is selected for compact dual-channel P-FET switching where AEC-Q101 qualification, ESD robustness (2 kV HBM), and thermal performance on FR4 PCBs are critical design requirements.

Technical Context

This dual P-channel MOSFET uses Trench MOSFET technology to achieve low gate charge (0.55 nC typical) and fast switching with 19 ns turn-on delay and 38 ns fall time under standard test conditions. Its symmetrical dual topology supports independent channel control without shared source/drain nodes.

The device features matched threshold voltage (−0.6 to −1.1 V), low sub-threshold leakage (<1 µA at V_DS = −30 V, T_j = 25 °C), and integrated source-drain diode with V_SD = −0.47 V at −200 mA - enabling bidirectional current handling in load-switch configurations.

Key Specifications

Pinout & Package

SOT363 (SC-88) plastic surface-mounted package, 6-pin, 1.35 mm × 2.2 mm footprint, 0.65 mm pitch, with exposed drain pad for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET switching applications.

Compared with DMN2053LSD-13 and SI2305DS-T1-GE3, NX3008PBKS delivers superior power density, guaranteed automotive qualification, and lower conduction loss in a single compact package - making it optimal for space-constrained, safety-critical dual-switching nodes.

Availability

NX3008PBKS is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and medical diagnostic equipment requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for NX3008PBKS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.

NX3008PBKS belongs to Nexperia's TrenchMOS family - engineered specifically for compact, high-efficiency load switching in automotive and industrial systems where low R_DS(on), fast switching, and robust qualification are mandatory.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

The NX3008PBKS supports −125 mA continuous drain current per transistor at T_amb = 100 °C, as specified in Table 5 Limiting Values. This derating reflects thermal constraints of the SOT363 package on standard FR4 PCBs with single-sided copper.

Can NX3008PBKS be used as a level shifter for 3.3 V GPIO driving 24 V loads?

Yes - its −0.9 V typical V_GS(th) and −30 V V_DS rating allow direct interface with 3.3 V microcontrollers to switch 24 V loads in high-side configuration. No external level-shifting circuitry is needed, provided gate drive impedance is ≤6 Ω for specified switching times.

Is the source-drain diode suitable for reverse-current protection?

The integrated source-drain diode has V_SD = −0.47 V at −200 mA and T_j = 25 °C, making it suitable for basic reverse-current blocking in low-power applications. However, it is not rated for avalanche energy and must not be subjected to unclamped inductive kickback.

How does the thermal resistance change with a 1 cm² drain pad?

With a 1 cm² copper drain pad on FR4, R_th(j-a) improves from 445 K/W (standard footprint) to 340–390 K/W per transistor (Table 6). This 24% reduction lowers junction temperature rise by ~35 °C at 200 mA, extending safe operating area and lifetime.