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Nexperia USA Inc. NX3008PBKV,115

Part No.:
NX3008PBKV,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixNX3008PBKV,115.pdf
Description:
MOSFET 2P-CH 30V 0.22A SOT666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,532

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Product details

Overview

NX3008PBKV from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in SOT666 package, designed for high-side load switching and relay driving. It delivers ±30 V drain-source voltage rating, −220 mA continuous drain current per transistor at 25 °C, and 2.8 Ω typical RDS(on) at VGS = −4.5 V - enabling compact, low-loss power control in space-constrained consumer and industrial PCBs.

For engineers reviewing the NX3008PBKV datasheet, NX3008PBKV pinout, NX3008PBKV application, or NX3008PBKV equivalent, key selection criteria include its dual-channel P-channel topology, ultra-low gate threshold (−0.9 V typ), fast switching (tr = 30 ns), ESD robustness (2 kV HBM), and thermal performance on FR4 (Rth(j-a) = 330 K/W per transistor).

Technical Context

This device integrates two independent P-channel Trench MOSFETs in a single ultra-small SOT666 package, sharing no internal connection between channels. Each transistor operates with gate-source threshold voltage of −0.9 V (typ), supports gate drive down to −2.5 V for partial turn-on, and exhibits low input capacitance (Ciss = 31 pF typ) for efficient high-speed switching.

The dual configuration enables complementary high-side switching without external level-shifting circuitry. Its source-drain diode forward voltage is −0.88 V (typ) at −200 mA, supporting bidirectional current handling in load-switch and line-driver topologies where body diode conduction is utilized.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −30 V - Maximum blocking voltage per transistor; suitable for 24 V rail switching with margin.
ID (cont) −220 mA @ Tamb = 25 °C - Continuous current capability per channel on standard FR4 PCB.
RDS(on) 2.8 Ω (typ) @ VGS = −4.5 V, ID = −200 mA - Low on-resistance minimizes conduction loss in battery-powered loads.
VGS(th) −0.9 V (typ) @ ID = −250 µA - Enables logic-level drive from 1.8 V/3.3 V microcontrollers without gate boosting.
QG(tot) 0.55 nC (typ) - Low total gate charge reduces drive power and speeds up switching transitions.
Ciss 31 pF (typ) - Small input capacitance eases high-frequency gate drive design and reduces Miller effect.
tr/tf 30 ns / 38 ns - Fast edge rates support >1 MHz PWM operation in compact DC-DC or LED dimming circuits.

Pinout & Package

SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body. Ultra-flat profile enables co-planarity with fine-pitch ICs and compatibility with automated reflow assembly.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal of transistor TR1; connects to load return path in high-side switch configuration.
2 G1 Gate terminal of TR1; requires negative voltage relative to S1 to turn on; compatible with open-drain or level-shifted drivers.
3 D2 Drain terminal of transistor TR2; ties to positive supply rail when TR2 is used as high-side switch.
4 S2 Source terminal of TR2; referenced to system ground or load common in dual-load isolation applications.
5 G2 Gate terminal of TR2; independently controllable from G1 for asynchronous dual-channel operation.
6 D1 Drain terminal of TR1; connects to power rail or signal line being switched; thermally coupled to PCB pad for heat dissipation.

Key Features

Feature Design Value
Ultra-small SOT666 footprint 1.6 mm × 1.2 mm area saves >60% board space vs. SO8 dual MOSFETs; ideal for wearables and IoT sensors.
Trench MOSFET technology Enables lower RDS(on) and higher transconductance (gfs = 160 mS) than planar P-ch devices at same voltage class.
ESD protection 2 kV HBM rating eliminates need for external TVS diodes in low-energy interface circuits.
Low VGS(th) dispersion −0.6 V to −1.1 V range ensures consistent turn-on across temperature and process variation in production batches.
Thermal resistance Rth(j-a) = 330 K/W (per transistor on FR4) allows 150 mW dissipation without heatsink in ambient ≤50 °C.

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules and smart home controllers to reduce size, bounce, and lifetime failure.

IC Role / Device Role / Timing Role: Dual high-side switch controlling coil current direction and timing via independent gate signals.

Use Value: Eliminates mechanical wear and contact arcing; enables 100 kHz pulse-controlled relay emulation with <30 ns rise time.

Use Scenario: Driving differential RS-422/RS-485 bus lines in industrial gateways where low skew and fast edge rates are critical.

IC Role / Device Role / Timing Role: P-channel pair acting as active pull-up switches for complementary signal paths with matched propagation delay.

Use Value: Achieves <50 ns channel-to-channel skew and supports >5 Mbps data rates due to low Ciss and fast tr/tf.

High-Side Load Switch Switching Circuits

Use Scenario: Power sequencing and fault-isolated supply enablement in portable medical monitors and handheld test equipment.

IC Role / Device Role / Timing Role: Dual independent high-side switches managing separate subsystem rails (e.g., sensor bias + display backlight).

Use Value: Provides soft-start via gate slew control and blocks reverse current during hot-swap events using intrinsic body diode orientation.

Use Scenario: Configurable logic-level translators and bidirectional signal clamping in mixed-voltage MCU interfaces (e.g., 1.8 V ↔ 3.3 V).

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration forming a voltage-controlled bidirectional switch with gate-driven conduction control.

Use Value: Enables level shifting without direction pins; supports <100 ns propagation delay and <1 µA leakage in off-state.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LSD-13 Single-channel, SOT-26 package; RDS(on) = 3.5 Ω @ −4.5 V; VGS(th) = −1.0 V (min) Requires two devices for dual function; larger board area; higher gate charge (0.9 nC) Select when needing higher VDS (−40 V) and proven automotive qualification (AEC-Q101).
FDMA1027PZ Dual P-ch in WDFN-6; RDS(on) = 2.5 Ω @ −4.5 V; 0.45 mm height; no integrated ESD diode Better thermal performance (Rth(j-a) = 190 K/W) but requires external ESD protection on sensitive lines Select for high-power density designs where PCB real estate is constrained and ESD risk is mitigated at system level.

Compared with DMN2004LSD-13 and FDMA1027PZ, NX3008PBKV offers the smallest footprint (1.92 mm²), built-in 2 kV HBM ESD protection, and lowest gate threshold - making it optimal for ultra-compact, low-voltage, cost-sensitive consumer electronics where dual independent control is required without added components.

Availability

NX3008PBKV is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, and high-side loadswitch applications requiring stable component supply, consistent parametric binning, and long-term manufacturability assurance.

Supply support for NX3008PBKV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

This device belongs to Nexperia's TrenchMOS® small-signal power portfolio, engineered specifically for space-constrained, low-voltage power management in consumer, computing, and industrial systems where efficiency, size, and ease of integration are prioritized.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

The NX3008PBKV supports −140 mA continuous drain current per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal limits on an FR4 PCB with single-sided copper and standard footprint, not junction temperature limits alone.

Can NX3008PBKV be used in back-to-back configuration for AC switching?

Yes - both transistors can be wired source-to-source to form a bidirectional switch. The −0.88 V typical VSD and symmetric VDS/VGS ratings allow conduction in either direction when gates are driven below source potential, enabling solid-state AC relay replacement up to 20 V RMS.

Is the SOT666 package lead-free and RoHS compliant?

Yes - the NX3008PBKV uses a lead-free, halogen-free, and RoHS-compliant SOT666 package per Nexperia's product compliance documentation (document ID: "Lead-free and RoHS compliance statement – Nexperia"). The device meets JEDEC J-STD-020 moisture sensitivity level MSL3.

Does the device require external gate resistors for stability in switching applications?

No external gate resistor is required for basic stability, but a 10 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance (Crss = 2.3 pF). This improves EMI performance and prevents false turn-on during fast dv/dt events on the drain node.

NX3008PBKV,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
220mA
Rds On (Max) @ Id, Vgs:
4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 15V
Power - Max:
500mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

NX3008PBKV,115 FAQ

1.How can I place an order for NX3008PBKV,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for NX3008PBKV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NX3008PBKV,115 reliable?

The price and inventory of NX3008PBKV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX3008PBKV,115 is usually 5 days.

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5.How can I obtain technical support or documentation for NX3008PBKV,115?

For technical support, including NX3008PBKV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX3008PBKV,115 requirements.

6.How does Aetrix verify that NX3008PBKV,115 is sourced from the original manufacturer or authorized distributors?

All NX3008PBKV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX3008PBKV,115 meets industry standards.

7.What is the process for return or replacement of NX3008PBKV,115?

All NX3008PBKV,115 units undergo pre-shipment inspection (PSI). If there is an issue with NX3008PBKV,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NX3008PBKV,115 part is unused and in its original packaging.

Return procedure for NX3008PBKV,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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