Nexperia USA Inc. NX3020NAKS,115
- Part No.:
- NX3020NAKS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NX3020NAKS,115.pdf
- Description:
- MOSFET 2N-CH 30V 0.18A 6TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:48,004
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Product details
Overview
NX3020NAKS from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for 30 V drain-source voltage, 180 mA continuous drain current per transistor, and 2.7 Ω typical RDS(on) at VGS = 10 V - deployed as low-side loadswitches and high-speed line drivers in compact portable electronics.
For engineers reviewing the NX3020NAKS datasheet, NX3020NAKS pinout, NX3020NAKS application, or NX3020NAKS equivalent, this device supports fast switching (td(off) ≤ 68 ns), low-threshold operation (VGS(th) = 1.2 V typ), ESD protection, and thermal performance validated on FR4 PCB with 1 cm² drain pad.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single 6-pin TSSOP6 package, sharing no internal connection between transistors - each channel operates with isolated gate, source, and drain terminals. Its Trench MOSFET architecture enables low RDS(on) and high transconductance (gfs = 320 mS typ) at low VGS, supporting efficient 2.5–4.5 V logic-level drive.
The device features symmetric pinout (pins 1/2/6 for TR1, pins 3/4/5 for TR2), defined safe operating area up to 720 mA peak drain current, and junction temperature range from –55 °C to 150 °C - enabling use in thermally constrained consumer and industrial control circuits without external heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports rail-to-rail switching in 24 V systems and robust overvoltage margin in 5–12 V logic interfaces. |
| ID (per transistor) | 180 mA continuous at Tamb = 25 °C - sufficient for driving LEDs, small relays, and signal-level loads without derating in ambient < 75 °C. |
| RDS(on) | 2.7 Ω typical at VGS = 10 V, ID = 100 mA - ensures < 27 mW conduction loss at 100 mA, minimizing self-heating in battery-powered devices. |
| VGS(th) | 1.2 V typical - enables reliable turn-on from 1.8 V and 2.5 V microcontroller GPIOs without level-shifting circuitry. |
| QG(tot) | 0.34 nC typical - reduces gate drive power and enables >1 MHz switching in low-power DC-DC bias rails and PWM dimming circuits. |
| td(off) | 34 ns typical - supports clean edge transitions in high-speed digital isolation and data line buffering applications. |
| Tj range | –55 °C to +150 °C - qualified for extended industrial and automotive under-hood environments when mounted per recommended footprint. |
Pinout & Package
Package: SOT363 (SC-88), also designated TSSOP6 - ultra-compact 2.2 mm × 1.8 mm surface-mount plastic package with 0.65 mm lead pitch, optimized for high-density PCB layouts and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (TR1) | Low-impedance return path for first transistor; internally connected only to TR1 channel - requires local ground routing. |
| 2 | Gate (TR1) | Control input for TR1; threshold-triggered with 0.8–1.5 V VGS(th); minimal gate charge enables direct MCU drive. |
| 3 | Drain (TR2) | High-side output node for second transistor; rated for 30 V and 180 mA - connects to load supply or signal line. |
| 4 | Source (TR2) | Return path for TR2; electrically isolated from Pin 1 - allows independent grounding or floating configurations. |
| 5 | Gate (TR2) | Independent control input for TR2; identical electrical behavior to Pin 2 - supports dual asynchronous switching. |
| 6 | Drain (TR1) | Output node for TR1; shares no internal connection with Pin 3 - enables true dual-channel isolation in load-switching pairs. |
Key Features
| Feature | Design Value |
|---|---|
| Very fast switching | td(off) = 34 ns typ and tf = 17 ns typ enable clean 10–50 MHz clock distribution and high-frequency PWM control. |
| Trench MOSFET technology | Delivers 2.7 Ω RDS(on) at 10 V and 320 mS gfs - improves efficiency and gain in low-voltage analog switches and current mirrors. |
| ESD protection | HBM rating ≥ 2 kV - eliminates need for external TVS diodes in handheld and USB-peripheral interface designs. |
| Low threshold voltage | VGS(th) = 0.8–1.5 V - ensures full enhancement with 1.8 V I/O standards, reducing system-level voltage translation complexity. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving 5 V/12 V electromagnetic relays in PLC I/O modules and smart home controllers. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; dual configuration allows independent actuation of two relays from one IC. Use Value: 180 mA per channel supports standard 5 V relays (e.g., 70–150 Ω coils); fast turn-off (34 ns) prevents contact bounce during rapid cycling. |
Use Scenario: Transmitting TTL/CMOS logic signals across noisy industrial backplanes or sensor cables. IC Role / Device Role / Timing Role: Active pull-down element in push-pull line driver topology; TR1 and TR2 used in complementary pair configuration. Use Value: 0.34 nC QG and 5 ns tr ensure sub-10 ns edge fidelity; low Ciss (13 pF typ) minimizes capacitive loading on 50 Ω transmission lines. |
| Low-Side Loadswitch | Switching Circuit |
Use Scenario: Power gating of peripheral ICs (e.g., sensors, RF modules) in wearables and IoT edge nodes. IC Role / Device Role / Timing Role: Controlled power path switch; each transistor independently enables/disables separate 3.3 V or 5 V subsystem rails. Use Value: 2.7 Ω RDS(on) limits voltage drop to < 0.5 V at 180 mA, preserving regulation margin; thermal resistance Rth(j-a) = 390 K/W sustains operation at 75 °C ambient. |
Use Scenario: Building compact synchronous rectifiers or bidirectional current steering in DC-DC converter auxiliary paths. IC Role / Device Role / Timing Role: Dual-channel discrete switch enabling phase-controlled current routing or polarity reversal in low-power converters. Use Value: Independent drain/source terminals (Pins 1/6 and 3/4) allow non-common-source topologies; VSD = 0.7 V typ supports body-diode conduction in flyback snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on) (3.5 Ω min at VGS = 4.5 V), larger SOT-26 package (3.0 mm × 1.7 mm), no specified ESD rating. | Less suitable for 1.8 V drive or space-constrained layouts; higher conduction loss impacts battery runtime. | Select when cost sensitivity outweighs size and low-VGS requirements; verify layout clearance for larger footprint. |
| FDMA1023NZ | Lower VDS (20 V), higher ID (300 mA), same SOT-363 package, but VGS(th) = 1.5 V min - less margin at 1.8 V. | Better for higher-current 3.3 V systems; unsuitable for 24 V signal switching due to lower breakdown rating. | Prefer for 3.3 V microcontroller-based loadswitching where current demand exceeds 180 mA per channel. |
Compared with DMN2020LSD-13 and FDMA1023NZ, NX3020NAKS uniquely balances 30 V capability, 1.2 V VGS(th) typ, and SOT363 size - making it optimal for dual low-threshold switching in space- and voltage-critical portable designs.
Availability
NX3020NAKS is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and compact switching circuits requiring stable component supply across production lifecycles.
Supply support for NX3020NAKS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
NX3020NAKS belongs to Nexperia's TrenchMOS family, engineered specifically for low-voltage, high-speed switching in space-constrained applications where logic-level drive, low RDS(on), and robust ESD tolerance are critical.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
The NX3020NAKS supports 110 mA continuous drain current per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal resistance of 390 K/W and power dissipation limit of 260 mW under standard FR4 mounting conditions.
Can both transistors be used in parallel to increase current handling?
No - the NX3020NAKS transistors are electrically isolated with separate gates, sources, and drains; paralleling requires matched VGS(th) and thermal coupling, which is not guaranteed. The datasheet specifies parameters per transistor, not per device, and does not validate parallel operation.
Is the SOT363 package compatible with standard reflow soldering profiles?
Yes - Nexperia provides dedicated reflow footprint dimensions (Fig. 19) and qualifies the SOT363 package for JEDEC J-STD-020-compliant lead-free reflow. Peak temperature must not exceed 260 °C, and thermal profile must maintain ramp rates and time-above-liquidus within specification limits.
Does NX3020NAKS include integrated gate resistors or ESD clamps beyond HBM rating?
No - the device contains no internal gate resistors or active ESD clamps. Its 2 kV HBM rating is achieved through process-level protection structures. External series gate resistors (e.g., 10–100 Ω) are recommended for ringing suppression in high-dV/dt applications.
NX3020NAKS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 180mA
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13pF @ 10V
- Power - Max:
- 375mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NX3020NAKS,115 FAQ
1.How can I place an order for NX3020NAKS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for NX3020NAKS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX3020NAKS,115 reliable?
The price and inventory of NX3020NAKS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX3020NAKS,115 is usually 5 days.
3.What payment methods are accepted for NX3020NAKS,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX3020NAKS,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NX3020NAKS,115?
NX3020NAKS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NX3020NAKS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NX3020NAKS,115?
For technical support, including NX3020NAKS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX3020NAKS,115 requirements.
6.How does Aetrix verify that NX3020NAKS,115 is sourced from the original manufacturer or authorized distributors?
All NX3020NAKS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX3020NAKS,115 meets industry standards.
7.What is the process for return or replacement of NX3020NAKS,115?
All NX3020NAKS,115 units undergo pre-shipment inspection (PSI). If there is an issue with NX3020NAKS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX3020NAKS,115 part is unused and in its original packaging.
Return procedure for NX3020NAKS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NX3020NAKS,115 Tags

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2N7002DW-7-F
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2N7002BKS,115
Nexperia USA Inc.

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DMG6602SVT-7
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