My Inquiry
My Account
Nexperia USA Inc. NX3020NAKVYL
- Part No.:
- NX3020NAKVYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
NX3020NAKVYL.pdf
- Description:
- MOSFET 2N-CH 30V 0.2A SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:7,623
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NX3020NAKVYL from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, rated for 30 V drain-source voltage and 200 mA continuous drain current per transistor, with typical RDS(on) of 2.7 Ω at VGS = 10 V and low 1.2 V gate threshold voltage - deployed in high-speed line drivers and low-side loadswitches where space-constrained PCB layouts demand ultra-small dual-FET integration.
For engineers reviewing the NX3020NAKVYL datasheet, NX3020NAKVYL pinout, NX3020NAKVYL application, or NX3020NAKVYL equivalent, key selection criteria include verified dual-transistor thermal coupling in SOT666, sub-1.4 V VGS(th) tolerance across temperature, normalized power derating curves up to 150 °C junction, and ESD-protected gate structure confirmed per IEC 61000-4-2 Level 2.
Technical Context
This device integrates two independent N-channel Trench MOSFETs sharing no internal connection - each with isolated source, gate, and drain terminals. Its trench-based silicon architecture enables fast switching (td(on) ≤ 10 ns, tf ≤ 17 ns) and low gate charge (QG(tot) = 0.34–0.44 nC), optimized for 3.3 V and 5 V logic-level drive without external level shifting.
Thermal performance is defined by two mounting configurations: Rth(j-a) = 410 K/W on standard FR4 footprint and 290 K/W with 1 cm² drain pad - enabling stable operation up to 120 mA continuous drain current at 100 °C ambient, validated via JEDEC JESD51-2 transient impedance curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V industrial bus and 5 V logic-rail switching without avalanche stress |
| ID (continuous) | 200 mA per transistor at Tamb = 25 °C - sufficient for driving small relays or LED strings |
| RDS(on) | 2.7 Ω typ @ VGS = 10 V, ID = 100 mA - ensures <100 mW conduction loss at full rated current |
| VGS(th) | 1.2 V typ @ ID = 250 µA - guarantees reliable turn-on with 3.3 V microcontroller GPIO |
| QG(tot) | 0.34 nC min - enables <10 ns switching transitions with <10 Ω gate resistor |
| Ciss | 13 pF typ - minimizes capacitive loading on driving ICs in high-frequency digital interfaces |
| Tj max | 150 °C - allows operation in sealed enclosures with passive cooling only |
Pinout & Package
Package: SOT666 - ultra-flat 6-lead surface-mount plastic package, 1.6 mm × 1.2 mm × 0.55 mm body, 0.5 mm lead pitch, designed for automated reflow assembly and high-density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor TR1 - must be tied to local ground or return path for first switch |
| 2 | G1 | Gate terminal of transistor TR1 - requires RC snubber if driving inductive loads >10 mA |
| 3 | D2 | Drain terminal of transistor TR2 - connects to load supply rail when TR2 is active |
| 4 | S2 | Source terminal of transistor TR2 - electrically isolated from S1; routed separately on PCB |
| 5 | G2 | Gate terminal of transistor TR2 - independently controllable; no internal cross-coupling with G1 |
| 6 | D1 | Drain terminal of transistor TR1 - primary output node for first switching channel |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small dual-FET integration | SOT666 footprint replaces two discrete SOT23 devices - saves ≥35% board area in space-critical wearables and sensor nodes |
| Trench MOSFET technology | Enables 2.7 Ω RDS(on) at 10 V drive while maintaining <0.44 nC total gate charge - critical for battery-powered efficiency |
| ESD protection | HBM rating ≥2 kV - eliminates need for external TVS diodes in consumer-grade USB-peripheral switching |
| Low threshold voltage | VGS(th) = 0.8–1.4 V - ensures full enhancement with 1.8 V and 3.3 V I/O standards without gate boosting |
| Thermal derating support | Normalized Ptot curve provided to 125 °C ambient - enables accurate lifetime estimation in thermally constrained modules |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving 5 V/100 mA coil of miniature signal relay in PLC I/O module. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path; dual configuration allows independent control of two relays. Use Value: 200 mA per channel handles standard relay loads; 10 ns turn-on delay ensures deterministic response under 1 kHz scan cycles. |
Use Scenario: Transmitting TTL-level serial data across 15 cm flex cable in medical sensor hub. IC Role / Device Role / Timing Role: Active pull-down stage shaping edge rate and terminating stub reflections on unidirectional bus. Use Value: 13 pF Ciss and 17 ns fall time minimize jitter accumulation; dual layout avoids crosstalk between TX/RX paths. |
| Low-Side Loadswitch | Switching Circuit |
Use Scenario: Enabling/disabling 3.3 V power rail to BLE SoC during deep-sleep mode in asset tracker. IC Role / Device Role / Timing Role: Controlled power gate with minimal quiescent current; second FET used for status feedback sensing. Use Value: 0.5 µA gate leakage at 4.5 V ensures <1 µA system standby increase; 0.47 V VSD forward drop preserves rail accuracy. |
Use Scenario: Implementing bidirectional logic-level translation between 1.8 V MCU and 5 V peripheral in handheld test equipment. IC Role / Device Role / Timing Role: Dual-channel level shifter using back-to-back FET configuration with gate bias resistors. Use Value: Matched VGS(th) (0.8–1.4 V) across both transistors ensures symmetric switching thresholds; SOT666 symmetry simplifies layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | Higher RDS(on) (3.5 Ω typ), larger SOT-363 package (2.1 mm × 1.25 mm), no ESD rating specified | Limited to non-ESD-sensitive environments; less suitable for portable electronics with user-accessible ports | Prefer when cost sensitivity outweighs board area and ESD robustness requirements |
| NTZD3154PT1G | Lower VDS (20 V), higher ID (600 mA), different pinout (G1-D1-S1-G2-D2-S2), no thermal data for FR4 mounting | Better for higher-current 3.3 V systems but incompatible with 24 V bus switching or SOT666 layout reuse | Select only when peak current >300 mA is required and thermal modeling is performed independently |
Compared with DMN2004LKQ-7 and NTZD3154PT1G, NX3020NAKVYL uniquely balances ultra-compact SOT666 size, guaranteed ESD protection, and validated thermal derating curves - making it optimal for miniaturized industrial sensors and battery-powered IoT endpoints where layout density and reliability co-constrain design.
Availability
NX3020NAKVYL is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and compact switching circuits requiring stable component supply across production volumes from prototype to volume manufacturing.
Supply support for NX3020NAKVYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.
NX3020NAKVYL belongs to Nexperia's TrenchMOS family, engineered specifically for space-constrained, low-power switching applications in consumer, computing, and industrial electronics where dual-FET integration reduces bill-of-materials count and improves signal integrity.
FAQ
What is the maximum safe operating voltage for NX3020NAKVYL in continuous DC operation?
The absolute maximum drain-source voltage (VDS) is 30 V, and this rating applies under all continuous DC conditions per IEC 60134 limiting values. Operation above 30 V risks irreversible avalanche breakdown, even with current limiting. For 24 V systems, a 20 % margin is maintained; no derating is required below 25 °C ambient.
Can NX3020NAKVYL be used with 1.8 V GPIO without external level shifting?
Yes - its gate threshold voltage (VGS(th)) ranges from 0.8 V to 1.4 V, and measured RDS(on) remains ≤5.2 Ω at VGS = 1.8 V and ID = 10 mA. Full enhancement occurs at 1.8 V, enabling direct drive from 1.8 V microcontrollers while maintaining <200 mW conduction loss at rated current.
How does thermal performance differ between standard SOT666 footprint and enhanced drain pad layout?
With standard FR4 footprint, Rth(j-a) is 410 K/W; adding a 1 cm² tin-plated copper drain pad reduces it to 290 K/W. This 30 % improvement allows 120 mA continuous current at 100 °C ambient versus 85 mA on standard layout - verified via Fig. 1 and Fig. 2 in the official datasheet.
Is NX3020NAKVYL qualified for automotive applications?
No - the datasheet explicitly states "Product changed to non-automotive qualification" in Revision History (v.3, 2022). It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond 150 °C junction. Use in automotive systems requires formal qualification by the end customer and carries no Nexperia warranty.
NX3020NAKVYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 20pF @ 10V
- Power - Max:
- 260mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
NX3020NAKVYL FAQ
1.How can I place an order for NX3020NAKVYL through Aetrix?
Please submit a Request for Quotation (RFQ) for NX3020NAKVYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX3020NAKVYL reliable?
The price and inventory of NX3020NAKVYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX3020NAKVYL is usually 5 days.
3.What payment methods are accepted for NX3020NAKVYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX3020NAKVYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NX3020NAKVYL?
NX3020NAKVYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NX3020NAKVYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NX3020NAKVYL?
For technical support, including NX3020NAKVYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX3020NAKVYL requirements.
6.How does Aetrix verify that NX3020NAKVYL is sourced from the original manufacturer or authorized distributors?
All NX3020NAKVYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX3020NAKVYL meets industry standards.
7.What is the process for return or replacement of NX3020NAKVYL?
All NX3020NAKVYL units undergo pre-shipment inspection (PSI). If there is an issue with NX3020NAKVYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX3020NAKVYL part is unused and in its original packaging.
Return procedure for NX3020NAKVYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NX3020NAKVYL Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
