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Nexperia USA Inc. NX6008NBKSX
- Part No.:
- NX6008NBKSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NX6008NBKSX.pdf
- Description:
- MOSFET 2N-CH 60V 0.22A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:16,489
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Product details
Overview
NX6008NBKSX from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for 60 V drain-source voltage, 220 mA continuous drain current at 25 °C, and 2.0 Ω typical RDS(on) at VGS = 4.5 V - designed for low-side load switching and high-speed line driving in space-constrained PCBs.
For engineers reviewing the NX6008NBKSX datasheet, NX6008NBKSX pinout, NX6008NBKSX application, or NX6008NBKSX equivalent, this device supports fast-switching relay drivers, compact dual-load control, ESD-hardened signal routing, and thermally efficient FR4-mounted operation with validated junction-to-solder-point thermal resistance of 95 K/W.
Technical Context
This dual discrete MOSFET integrates two independent N-channel channels sharing no internal connection - each channel features trench-gate architecture enabling low gate charge (0.46 nC typical), fast switching (tr = 2 ns, tf = 4 ns), and sub-1 V gate threshold (0.4–0.9 V). It operates with zero gate drive interdependence and supports bidirectional source-drain conduction via intrinsic body diodes.
The device uses a monolithic die with separate source, gate, and drain terminals per channel - pin 1/S1 and pin 4/S2 are isolated sources; pins 2/G1 and 5/G2 are independent gates; pins 3/D2 and 6/D1 are dedicated drains - enabling true dual-channel low-side switching without cross-talk or shared thermal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum - supports industrial 24 V and telecom 48 V bus switching without derating. |
| RDS(on) | 2.0 Ω typical at VGS = 4.5 V, ID = 300 mA, Tj = 25 °C - enables <100 mW conduction loss at 220 mA load. |
| QG(tot) | 0.46 nC typical - allows clean 10 MHz+ PWM edge rates with minimal gate driver power demand. |
| VGS(th) | 0.6 V typical - ensures reliable turn-on from 1.8 V logic and compatibility with low-voltage microcontrollers. |
| ESD Rating | >2 kV HBM - eliminates need for external ESD protection in board-level I/O interface applications. |
| Tj(max) | 150 °C - permits operation in sealed enclosures or high-ambient environments up to 100 °C ambient with proper layout. |
| ID(max) | 220 mA continuous at Tamb = 25 °C - sufficient for driving LED strings, small solenoids, or logic-level signal buffers. |
Pinout & Package
Package: SOT363 (SC-88), 6-lead TSSOP, 0.65 mm pitch, 2.1 × 1.25 × 0.95 mm body - optimized for automated placement and reflow on standard FR4 PCBs with 1 cm² drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal for Channel 1 - connects to ground reference for first low-side switch path. |
| 2 | G1 | Gate terminal for Channel 1 - accepts independent logic-level control signal (0–4.5 V). |
| 3 | D2 | Drain terminal for Channel 2 - routes switched load current from VCC to Channel 2's load. |
| 4 | S2 | Source terminal for Channel 2 - isolated ground return for second independent low-side path. |
| 5 | G2 | Gate terminal for Channel 2 - electrically and thermally decoupled from G1 for asynchronous control. |
| 6 | D1 | Drain terminal for Channel 1 - connects to power rail for first switched load (e.g., relay coil or LED anode). |
Key Features
| Feature | Design Value |
|---|---|
| Low VGS(th) | 0.6 V typical - enables direct drive from 1.8 V/2.5 V I/O without level-shifting circuitry. |
| Fast switching | tr = 2 ns, tf = 4 ns - reduces transition losses in PWM dimming and digital signal routing. |
| Trench MOSFET process | 2.0 Ω RDS(on) in 1.25 mm wide package - achieves higher current density than planar alternatives at same footprint. |
| ESD-hardened structure | >2 kV HBM rating - withstands handling and board-level ESD events without external TVS diodes. |
| Thermal performance | Rth(j-sp) = 95 K/W - enables >1 W pulsed dissipation when soldered to 1 cm² copper pad. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving 5 V/12 V electromagnetic relays in PLC I/O modules with microcontroller GPIO. IC Role / Device Role / Timing Role: Dual low-side switch controlling relay coils independently; supports staggered actuation to limit inrush current. Use Value: 0.6 V VGS(th) ensures full turn-on from 3.3 V MCU outputs; 2.0 Ω RDS(on) limits coil power loss to <150 mW at 200 mA. |
Use Scenario: Transmitting TTL/CMOS signals across noisy industrial backplanes with impedance matching. IC Role / Device Role / Timing Role: Active pull-down element in push-pull line driver configuration; complements external high-side FET or resistor. Use Value: 2 ns rise time preserves signal integrity up to 50 MHz; 2 kV ESD rating prevents latch-up during hot-plug insertion. |
| Low-Side Load Switch | Switching Circuit |
|
Use Scenario: Power gating of sensors, displays, or communication peripherals in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Dual-channel load disconnect switch controlled by system PMIC or MCU; enables selective subsystem shutdown. Use Value: 1 µA IDSS leakage at 60 V ensures >10-year battery shelf life; SOT363 footprint saves >3 mm² vs. two discrete SOT23 devices. |
Use Scenario: Building compact DC-DC converter synchronous rectifiers or half-bridge topologies in space-limited DC/DC modules. IC Role / Device Role / Timing Role: Complementary low-side switch in discrete half-bridge; shares gate drive timing with external high-side FET. Use Value: Matched RDS(on) between channels minimizes current imbalance; 0.46 nC QG reduces gate driver supply current by 40% vs. legacy MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NTJD4152P | 60 V VDS, 270 mA ID, 1.5 Ω RDS(on) @ 4.5 V - lower on-resistance but larger SOT-363 variant with 0.1 mm tighter pitch tolerance. | Higher current capability suits 24 V solenoid loads; less suitable for 1.8 V logic due to 0.9 V min VGS(th). | Select when higher continuous current (>220 mA) and lower conduction loss are prioritized over ultra-low-threshold drive. |
| Diodes Incorporated DMP2035U | 20 V VDS, 300 mA ID, 0.8 Ω RDS(on) @ 4.5 V - lower voltage rating but superior on-resistance and faster 1.5 ns tr. | Only suitable for ≤20 V systems (e.g., USB PD accessories); incompatible with 48 V telecom or industrial buses. | Choose for 3.3 V/5 V portable electronics where voltage headroom is limited and speed is critical. |
Compared with NTJD4152P and DMP2035U, NX6008NBKSX uniquely balances 60 V robustness, 0.6 V threshold, and SOT363 manufacturability - making it optimal for mixed-voltage industrial controllers needing both logic compatibility and bus fault tolerance.
Availability
NX6008NBKSX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply across automotive-adjacent industrial, building automation, and test equipment programs.
Supply support for NX6008NBKSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices - delivering scalable solutions for automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.
NX6008NBKSX belongs to Nexperia's TrenchMOS family - engineered specifically for space-constrained, low-power switching applications demanding low threshold voltage, fast switching, and robust ESD immunity in miniature surface-mount packages.
FAQ
What is the maximum continuous drain current for NX6008NBKSX at 100 °C ambient temperature?
The maximum continuous drain current is 140 mA at Tamb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with conditions VGS = 4.5 V and Tamb = 100 °C. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures on standard FR4 PCBs.
Does NX6008NBKSX integrate body diodes, and what is their forward voltage?
Yes - each channel includes an inherent source-drain body diode. At IS = 220 mA and Tj = 25 °C, the source-drain forward voltage (VSD) is 0.7–1.2 V, per Table 7 (Characteristics). These diodes enable freewheeling in inductive load applications like relay coils without external components.
Can NX6008NBKSX be used in parallel configurations for higher current handling?
No - the device is not characterized or recommended for paralleling. Its RDS(on) has ±35% unit-to-unit variation (2.0–2.7 Ω), and mismatched threshold voltages (0.4–0.9 V) would cause uneven current sharing. For higher current, use a single-channel part with appropriate rating or discrete layout optimization.
What is the thermal resistance from junction to solder point (Rth(j-sp)) and why does it matter?
Rth(j-sp) is 95 K/W, measured from die junction to PCB solder joint under standard mounting conditions. This value directly determines how much power can be safely dissipated during short pulses - e.g., 1.3 W peak power is achievable for 10 µs pulses (Fig. 3), critical for surge-tolerant relay driving and transient load switching.
NX6008NBKSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.7Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27pF @ 30V
- Power - Max:
- 260mW (Ta), 1.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NX6008NBKSX FAQ
1.How can I place an order for NX6008NBKSX through Aetrix?
Please submit a Request for Quotation (RFQ) for NX6008NBKSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX6008NBKSX reliable?
The price and inventory of NX6008NBKSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX6008NBKSX is usually 5 days.
3.What payment methods are accepted for NX6008NBKSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX6008NBKSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NX6008NBKSX?
NX6008NBKSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NX6008NBKSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NX6008NBKSX?
For technical support, including NX6008NBKSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX6008NBKSX requirements.
6.How does Aetrix verify that NX6008NBKSX is sourced from the original manufacturer or authorized distributors?
All NX6008NBKSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX6008NBKSX meets industry standards.
7.What is the process for return or replacement of NX6008NBKSX?
All NX6008NBKSX units undergo pre-shipment inspection (PSI). If there is an issue with NX6008NBKSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX6008NBKSX part is unused and in its original packaging.
Return procedure for NX6008NBKSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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