Nexperia USA Inc. NX6020CAKSX
- Part No.:
- NX6020CAKSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NX6020CAKSX.pdf
- Description:
- MOSFET N/P-CH 60V 0.17A 6TSSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
NX6020CAKSX from Nexperia is a complementary N/P-channel Trench MOSFET in SOT363 (SC-88) package, rated for 60 V (N-ch) and −50 V (P-ch), with continuous drain currents of 170 mA and −160 mA respectively, and RDS(on) values of 3 Ω (N-ch @ VGS = 10 V) and 4.5 Ω (P-ch @ VGS = −10 V); used in compact relay drivers and level-shifting circuits requiring dual-channel switching in space-constrained PCBs.
For engineers reviewing the NX6020CAKSX datasheet, NX6020CAKSX pinout, NX6020CAKSX application, or NX6020CAKSX equivalent, this device serves as a verified dual-channel discrete switch optimized for high-speed line driving, power supply converter control, and bidirectional signal translation where low gate charge (0.33 nC N-ch / 0.26 nC P-ch) and ESD protection are critical.
Technical Context
This dual MOSFET integrates independent N-channel (TR1) and P-channel (TR2) devices sharing a common SOT363 thermally enhanced footprint. Each channel features trench-gate architecture enabling fast switching (td(on) = 6 ns N-ch, td(off) = 48 ns P-ch) and low threshold voltages (VGS(th) = 1.1–2.1 V N-ch, −1.1 to −2.1 V P-ch).
Thermal performance is defined by junction-to-ambient Rth(j-a) of 500 K/W (N-ch) and 390 K/W (P-ch) on standard FR4, with derating curves confirming stable operation up to Tj = 150 °C. Safe operating area (SOA) plots validate pulsed current capability (IDM = ±680 mA) under short-duration conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (N-ch) | 60 V - Maximum blocking voltage before avalanche conduction; supports 48 V rail switching with margin. |
| VDS (P-ch) | −50 V - Negative drain-source rating enables reverse-polarity protection and high-side P-ch switching. |
| RDS(on) (N-ch) | 3 Ω typ @ VGS = 10 V - Enables <170 mW conduction loss at 100 mA, suitable for low-power load switching. |
| RDS(on) (P-ch) | 4.5 Ω typ @ VGS = −10 V - Delivers <160 mW loss at −100 mA, sufficient for logic-level driven level shifters. |
| QG(tot) | 0.33 nC (N-ch), 0.26 nC (P-ch) - Low gate charge reduces drive strength requirements and switching energy. |
| tr/tf | 7 ns / 14 ns (N-ch), 11 ns / 25 ns (P-ch) - Fast edge rates support >10 MHz digital interface applications. |
| VGS(th) | 1.6 V typ (N-ch), −1.6 V typ (P-ch) - Ensures reliable turn-on with 3.3 V logic while avoiding false triggering. |
Pinout & Package
Package: SOT363 (SC-88), 6-pin surface-mount plastic package with exposed drain pads for thermal enhancement; footprint matches JEDEC SC-88 standard (2.2 mm × 1.8 mm × 1.1 mm height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of N-channel MOSFET; connects to ground reference in low-side switch configuration. |
| 2 | G1 | Gate terminal of N-channel MOSFET; requires ≥1.6 V to turn on; routed with controlled impedance for noise immunity. |
| 3 | D2 | Drain terminal of P-channel MOSFET; used as output node in high-side or level-shifted paths. |
| 4 | S2 | Source terminal of P-channel MOSFET; tied to positive rail in high-side switch topology. |
| 5 | G2 | Gate terminal of P-channel MOSFET; driven negative relative to S2 for conduction; isolated from G1 to prevent cross-talk. |
| 6 | D1 | Drain terminal of N-channel MOSFET; primary output for low-side loads; shares thermal pad with D2. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET technology | Enables lower RDS(on) and higher cell density than planar process, reducing package size without sacrificing voltage rating. |
| Very fast switching | Sub-10 ns turn-on delay and <15 ns fall time allow use in >10 MHz digital signal routing and PWM control. |
| ESD protection | HBM rating ≥2 kV (per IEC 61000-4-2) eliminates need for external TVS diodes in board-level ESD zones. |
| Complementary dual-channel integration | Single SOT363 package replaces two discrete MOSFETs, cutting PCB area by >40% and simplifying layout for push-pull stages. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules with 3.3 V microcontroller outputs. IC Role / Device Role / Timing Role: N-channel switches relay coil to ground; P-channel provides active pull-up during coil de-energization to suppress back-EMF. Use Value: Dual-channel integration eliminates discrete pull-up resistor and reduces BOM count; 60 V rating accommodates 48 V relay coils with safety margin. |
Use Scenario: Transmitting differential LVDS-like signals across short PCB traces in test equipment front-ends. IC Role / Device Role / Timing Role: N/P pair forms a push-pull output stage translating CMOS logic levels to bipolar swing (0 V to 3.3 V). Use Value: Matched RDS(on) and fast edges (<25 ns transition) maintain signal integrity up to 25 Mbps without overshoot. |
| Level Shifter | Power Supply Converter |
Use Scenario: Translating 1.8 V GPIO signals to 5 V domain in mixed-voltage MCU peripherals. IC Role / Device Role / Timing Role: P-channel pulls output high when input is low; N-channel pulls output low when input is high - true bidirectional level translation. Use Value: Threshold voltages (±1.6 V) ensure clean switching at 1.8 V logic; no external bias required unlike passive resistor-based shifters. |
Use Scenario: Synchronous rectification in 5 V buck converter output stage for portable medical sensors. IC Role / Device Role / Timing Role: N-channel acts as low-side synchronous switch; P-channel serves as high-side switch in floating-gate configuration. Use Value: Combined RDS(on) < 8 Ω minimizes conduction loss at 100 mA load; thermal resistance allows operation at 75 °C ambient without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T | Higher RDS(on) (5.5 Ω N-ch / 7.5 Ω P-ch), larger SOT-563 package, no ESD rating specified. | Lower switching speed (tr = 15 ns) limits use to ≤5 MHz interfaces; unsuitable for ESD-sensitive environments. | Select if cost is primary constraint and thermal margin exceeds 20 °C; avoid for high-reliability or high-frequency designs. |
| FDMA1023NZ | Lower voltage rating (30 V/−30 V), smaller QG (0.22 nC), tighter RDS(on) tolerance (2.8–3.6 Ω), same SOT-363 footprint. | Not usable in 48 V systems; better suited for battery-powered 3.3 V/5 V logic translation with ultra-low drive current. | Prefer for portable electronics where 30 V rating suffices and gate drive power must be minimized below 1 µA. |
Compared with DMG1012T and FDMA1023NZ, NX6020CAKSX uniquely balances 60 V/−50 V robustness, sub-4 Ω RDS(on), and integrated ESD protection in SOT363-making it optimal for industrial relay drivers and 48 V-compatible level shifters where reliability and space efficiency are co-prioritized.
Availability
NX6020CAKSX is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, level-shifting interfaces, and synchronous rectifier stages requiring stable component supply across automotive infotainment, industrial automation, and medical sensor subsystems.
Supply support for NX6020CAKSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and analog portfolio serving industrial and consumer markets.
NX6020CAKSX belongs to Nexperia's TrenchMOS complementary dual-FET product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and bidirectional signal conditioning in 3.3 V–48 V systems.
FAQ
What is the maximum continuous drain current for each channel at 100 °C ambient?
At Tamb = 100 °C, the N-channel supports 100 mA continuous drain current (VGS = 10 V), and the P-channel supports −100 mA (VGS = −10 V), per Table 5 limiting values. Derating is linear above 25 °C, with full-rated current only guaranteed at Tamb ≤ 25 °C on standard FR4 PCB with 1 cm² drain pad.
Can NX6020CAKSX be used in a high-side P-channel switch configuration?
Yes - Pin 4 (S2) is the P-channel source and must be connected to the positive supply rail; Pin 5 (G2) is driven negative relative to S2 to turn on. The −50 V VDS rating and −1.6 V typical VGS(th) enable reliable operation with 3.3 V or 5 V logic-level gate drive using a simple inverter or charge pump.
Is the SOT363 package lead-free and RoHS-compliant?
Yes - NX6020CAKSX is manufactured in a lead-free, halogen-free, RoHS-compliant SOT363 package per Nexperia's product compliance documentation (document ID: "NX6020CAKS v.2", January 2018). Terminal finish is matte tin (Sn) over nickel (Ni) on copper leadframe.
Does the device include body diode conduction capability in both channels?
Yes - both channels feature integrated source-drain diodes: N-channel VSD = 0.7 V typ at 115 mA (forward), P-channel VSD = −0.85 V typ at −115 mA. These diodes support freewheeling in inductive loads and are characterized in Table 10 (VSD parameters) with temperature-dependent curves (Figs. 19 and 30).
NX6020CAKSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V, 50V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.43nC @ 4.5V, 0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17pF @ 10V, 36pF @ 25V
- Power - Max:
- 330mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NX6020CAKSX FAQ
1.How can I place an order for NX6020CAKSX through Aetrix?
Please submit a Request for Quotation (RFQ) for NX6020CAKSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX6020CAKSX reliable?
The price and inventory of NX6020CAKSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX6020CAKSX is usually 5 days.
3.What payment methods are accepted for NX6020CAKSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX6020CAKSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NX6020CAKSX?
NX6020CAKSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NX6020CAKSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NX6020CAKSX?
For technical support, including NX6020CAKSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX6020CAKSX requirements.
6.How does Aetrix verify that NX6020CAKSX is sourced from the original manufacturer or authorized distributors?
All NX6020CAKSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX6020CAKSX meets industry standards.
7.What is the process for return or replacement of NX6020CAKSX?
All NX6020CAKSX units undergo pre-shipment inspection (PSI). If there is an issue with NX6020CAKSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX6020CAKSX part is unused and in its original packaging.
Return procedure for NX6020CAKSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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