Nexperia USA Inc. NX7002AKS,115
- Part No.:
- NX7002AKS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NX7002AKS,115.pdf
- Description:
- MOSFET 2N-CH 60V 0.17A 6TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:9,996
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Product details
Overview
NX7002AKS,115 from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (TSSOP6) package, rated for 60 V drain-source voltage, 170 mA continuous drain current per transistor at 25 °C, and 3 Ω typical RDS(on) at VGS = 10 V and ID = 100 mA. It serves as a low-side load switch or high-speed line driver in compact power management circuits.
For engineers reviewing the NX7002AKS,115 datasheet, NX7002AKS,115 pinout, NX7002AKS,115 application, or NX7002AKS,115 equivalent, this device is selected for space-constrained dual-switching functions requiring fast switching, ESD protection, and stable on-resistance across temperature.
Technical Context
This dual discrete MOSFET integrates two independent N-channel channels sharing no internal connection-each with separate gate, source, and drain terminals. Its Trench MOSFET architecture enables low RDS(on) and fast switching (td(on) = 6 ns typ., tf = 14 ns typ.) under 10 V gate drive.
The device features integrated ESD protection (HBM >2 kV), operates over −55 °C to 150 °C junction temperature, and exhibits gate threshold voltage of 1.1–2.1 V with tight distribution. Its thermal resistance Rth(j-a) is 450–480 K/W on FR4 PCB with standard footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum - supports rail voltages up to 48 V DC systems with margin |
| RDS(on) | 3 Ω typical at VGS = 10 V, ID = 100 mA - enables <150 mW conduction loss per channel at 100 mA |
| ID (cont) | 170 mA per transistor at Tamb = 25 °C - suitable for signal-level and low-power switching loads |
| VGS(th) | 1.6 V typical - ensures reliable turn-on with 3.3 V logic-level gate drive |
| QG(tot) | 0.33 nC typical - minimizes gate drive power and enables >10 MHz switching in optimized layouts |
| Ciss | 11–17 pF - reduces capacitive loading on driving ICs and improves noise immunity |
| Tj range | −55 °C to 150 °C - qualified for industrial ambient environments without derating below −40 °C |
Pinout & Package
Package: SOT363 (TSSOP6), 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm lead pitch, surface-mount plastic package with exposed drain pads for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - connects to system ground or low-side return path |
| 2 | G1 | Gate terminal of transistor 1 - driven by logic-level control signal with ≤0.5 µA leakage |
| 3 | D2 | Drain terminal of transistor 2 - carries switched load current; thermally coupled to PCB pad |
| 4 | S2 | Source terminal of transistor 2 - independently routable; not internally tied to S1 |
| 5 | G2 | Gate terminal of transistor 2 - electrically isolated from G1; enables independent channel control |
| 6 | D1 | Drain terminal of transistor 1 - routed separately from D2; supports dual independent load switching |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching | td(on) = 6 ns typ., tf = 14 ns typ. - reduces transition losses in PWM and digital interface applications |
| Trench MOSFET technology | Enables 3 Ω RDS(on) at 10 V drive in ultra-small SOT363 - improves power density vs. planar alternatives |
| ESD protection | HBM >2 kV - eliminates need for external ESD diodes in board-level I/O protection schemes |
| Low gate charge | QG(tot) = 0.33 nC - allows direct drive from microcontroller GPIO without buffer stages |
| Thermal robustness | Rth(j-sp) = 115 K/W - enables efficient heat transfer to solder joint and PCB copper in dense layouts |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving coil of miniature signal relays in PLC I/O modules and telecom interface cards. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in on/off mode with <100 µs response. Use Value: 170 mA rating matches typical 5 V/12 V relay coils; 3 Ω RDS(on) limits self-heating to <10 mW at 50 mA drive. |
Use Scenario: Transmitting TTL/CMOS logic signals across short PCB traces or backplane stubs. IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain bus drivers. Use Value: 14 ns fall time and 11 pF Ciss support clean edge integrity up to 25 Mbps without overshoot. |
| Low-Side Load Switch | Switching Circuits |
Use Scenario: Enabling/disabling power to sensors, LEDs, or bias networks in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Controlled power path switch with logic-compatible gate input and minimal quiescent current. Use Value: IGSS <0.5 µA at VGS = 10 V ensures <50 nA control leakage; 1.6 V VGS(th) guarantees turn-on with 1.8 V MCU outputs. |
Use Scenario: Implementing dual-channel logic-controlled switches in motor driver pre-driver stages or analog multiplexers. IC Role / Device Role / Timing Role: Two independent, isolated N-channel switches sharing one compact footprint. Use Value: Pin 1–6 separation prevents crosstalk; independent S/G/D routing enables differential or mirrored topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004K-7 | 40 V VDS, 300 mA ID, 2.2 Ω RDS(on), same SOT363 package | Lower voltage rating but higher current capability - unsuitable for 48 V systems, better for 3.3/5 V logic loads | Select when higher ID and lower RDS(on) are prioritized over 60 V margin |
| PMN20ENEA | 60 V VDS, 260 mA ID, 2.5 Ω RDS(on), SOT363, no integrated ESD | Higher current and lower on-resistance, but lacks HBM ESD protection - requires external clamping | Select when board-level ESD design is already implemented and lower conduction loss is critical |
Compared with DMN2004K-7 and PMN20ENEA, NX7002AKS,115 uniquely balances 60 V rating, ESD robustness, and compact dual-channel integration-making it optimal for space-limited industrial I/O where voltage margin and reliability coexist.
Availability
NX7002AKS,115 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and dual-channel switching circuits requiring stable component supply and long-term industrial availability.
Supply support for NX7002AKS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
NX7002AKS,115 belongs to Nexperia's TrenchMOS family-designed specifically for space-constrained, low-power switching applications demanding fast response, low on-resistance, and robust ESD tolerance in ultra-small packages.
FAQ
Is NX7002AKS,115 suitable for 3.3 V logic-level gate drive?
Yes. With a typical gate threshold voltage of 1.6 V and maximum of 2.1 V, NX7002AKS,115 fully turns on using 3.3 V CMOS outputs. At VGS = 3.3 V, RDS(on) is 3.7–5.2 Ω (typ./max), supporting up to ~85 mA continuous drain current while maintaining low conduction loss.
What is the thermal performance difference between single-sided and double-sided PCB mounting?
On FR4 with single-sided 1 cm² drain pad, Rth(j-a) is 450–480 K/W. Double-sided copper with thermal vias can reduce this by ~30%, but the datasheet specifies only single-sided conditions. Rth(j-sp) remains 115 K/W regardless, reflecting direct die-to-solder-joint conduction.
Can the two transistors be used in parallel to increase current handling?
No. The transistors are electrically isolated but not matched for parallel operation-VGS(th) variation (±0.5 V) and RDS(on) mismatch cause uneven current sharing. For higher current, use a single-channel part with appropriate rating, not paralleling NX7002AKS,115 channels.
Does NX7002AKS,115 have integrated body diode functionality?
Yes. Each N-channel MOSFET includes an intrinsic source-drain diode with VSD = 0.47–1.2 V at IS = 115 mA. This diode conducts during reverse current events (e.g., inductive kickback), but is not rated for continuous forward conduction beyond its specified source current limit of 170 mA.
NX7002AKS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.43nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17pF @ 10V
- Power - Max:
- 220mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NX7002AKS,115 FAQ
1.How can I place an order for NX7002AKS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for NX7002AKS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NX7002AKS,115 reliable?
The price and inventory of NX7002AKS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX7002AKS,115 is usually 5 days.
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Once your NX7002AKS,115 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for NX7002AKS,115?
For technical support, including NX7002AKS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX7002AKS,115 requirements.
6.How does Aetrix verify that NX7002AKS,115 is sourced from the original manufacturer or authorized distributors?
All NX7002AKS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX7002AKS,115 meets industry standards.
7.What is the process for return or replacement of NX7002AKS,115?
All NX7002AKS,115 units undergo pre-shipment inspection (PSI). If there is an issue with NX7002AKS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NX7002AKS,115 part is unused and in its original packaging.
Return procedure for NX7002AKS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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Nexperia USA Inc.

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