Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. NX7002AKS,115

Part No.:
NX7002AKS,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixNX7002AKS,115.pdf
Description:
MOSFET 2N-CH 60V 0.17A 6TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,996

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NX7002AKS,115 from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (TSSOP6) package, rated for 60 V drain-source voltage, 170 mA continuous drain current per transistor at 25 °C, and 3 Ω typical RDS(on) at VGS = 10 V and ID = 100 mA. It serves as a low-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the NX7002AKS,115 datasheet, NX7002AKS,115 pinout, NX7002AKS,115 application, or NX7002AKS,115 equivalent, this device is selected for space-constrained dual-switching functions requiring fast switching, ESD protection, and stable on-resistance across temperature.

Technical Context

This dual discrete MOSFET integrates two independent N-channel channels sharing no internal connection-each with separate gate, source, and drain terminals. Its Trench MOSFET architecture enables low RDS(on) and fast switching (td(on) = 6 ns typ., tf = 14 ns typ.) under 10 V gate drive.

The device features integrated ESD protection (HBM >2 kV), operates over −55 °C to 150 °C junction temperature, and exhibits gate threshold voltage of 1.1–2.1 V with tight distribution. Its thermal resistance Rth(j-a) is 450–480 K/W on FR4 PCB with standard footprint.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V maximum - supports rail voltages up to 48 V DC systems with margin
RDS(on) 3 Ω typical at VGS = 10 V, ID = 100 mA - enables <150 mW conduction loss per channel at 100 mA
ID (cont) 170 mA per transistor at Tamb = 25 °C - suitable for signal-level and low-power switching loads
VGS(th) 1.6 V typical - ensures reliable turn-on with 3.3 V logic-level gate drive
QG(tot) 0.33 nC typical - minimizes gate drive power and enables >10 MHz switching in optimized layouts
Ciss 11–17 pF - reduces capacitive loading on driving ICs and improves noise immunity
Tj range −55 °C to 150 °C - qualified for industrial ambient environments without derating below −40 °C

Pinout & Package

Package: SOT363 (TSSOP6), 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm lead pitch, surface-mount plastic package with exposed drain pads for thermal performance.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal of transistor 1 - connects to system ground or low-side return path
2 G1 Gate terminal of transistor 1 - driven by logic-level control signal with ≤0.5 µA leakage
3 D2 Drain terminal of transistor 2 - carries switched load current; thermally coupled to PCB pad
4 S2 Source terminal of transistor 2 - independently routable; not internally tied to S1
5 G2 Gate terminal of transistor 2 - electrically isolated from G1; enables independent channel control
6 D1 Drain terminal of transistor 1 - routed separately from D2; supports dual independent load switching

Key Features

Feature Design Value
Fast switching td(on) = 6 ns typ., tf = 14 ns typ. - reduces transition losses in PWM and digital interface applications
Trench MOSFET technology Enables 3 Ω RDS(on) at 10 V drive in ultra-small SOT363 - improves power density vs. planar alternatives
ESD protection HBM >2 kV - eliminates need for external ESD diodes in board-level I/O protection schemes
Low gate charge QG(tot) = 0.33 nC - allows direct drive from microcontroller GPIO without buffer stages
Thermal robustness Rth(j-sp) = 115 K/W - enables efficient heat transfer to solder joint and PCB copper in dense layouts

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Driving coil of miniature signal relays in PLC I/O modules and telecom interface cards.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in on/off mode with <100 µs response.

Use Value: 170 mA rating matches typical 5 V/12 V relay coils; 3 Ω RDS(on) limits self-heating to <10 mW at 50 mA drive.

Use Scenario: Transmitting TTL/CMOS logic signals across short PCB traces or backplane stubs.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain bus drivers.

Use Value: 14 ns fall time and 11 pF Ciss support clean edge integrity up to 25 Mbps without overshoot.

Low-Side Load Switch Switching Circuits

Use Scenario: Enabling/disabling power to sensors, LEDs, or bias networks in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled power path switch with logic-compatible gate input and minimal quiescent current.

Use Value: IGSS <0.5 µA at VGS = 10 V ensures <50 nA control leakage; 1.6 V VGS(th) guarantees turn-on with 1.8 V MCU outputs.

Use Scenario: Implementing dual-channel logic-controlled switches in motor driver pre-driver stages or analog multiplexers.

IC Role / Device Role / Timing Role: Two independent, isolated N-channel switches sharing one compact footprint.

Use Value: Pin 1–6 separation prevents crosstalk; independent S/G/D routing enables differential or mirrored topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004K-7 40 V VDS, 300 mA ID, 2.2 Ω RDS(on), same SOT363 package Lower voltage rating but higher current capability - unsuitable for 48 V systems, better for 3.3/5 V logic loads Select when higher ID and lower RDS(on) are prioritized over 60 V margin
PMN20ENEA 60 V VDS, 260 mA ID, 2.5 Ω RDS(on), SOT363, no integrated ESD Higher current and lower on-resistance, but lacks HBM ESD protection - requires external clamping Select when board-level ESD design is already implemented and lower conduction loss is critical

Compared with DMN2004K-7 and PMN20ENEA, NX7002AKS,115 uniquely balances 60 V rating, ESD robustness, and compact dual-channel integration-making it optimal for space-limited industrial I/O where voltage margin and reliability coexist.

Availability

NX7002AKS,115 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and dual-channel switching circuits requiring stable component supply and long-term industrial availability.

Supply support for NX7002AKS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

NX7002AKS,115 belongs to Nexperia's TrenchMOS family-designed specifically for space-constrained, low-power switching applications demanding fast response, low on-resistance, and robust ESD tolerance in ultra-small packages.

FAQ

Is NX7002AKS,115 suitable for 3.3 V logic-level gate drive?

Yes. With a typical gate threshold voltage of 1.6 V and maximum of 2.1 V, NX7002AKS,115 fully turns on using 3.3 V CMOS outputs. At VGS = 3.3 V, RDS(on) is 3.7–5.2 Ω (typ./max), supporting up to ~85 mA continuous drain current while maintaining low conduction loss.

What is the thermal performance difference between single-sided and double-sided PCB mounting?

On FR4 with single-sided 1 cm² drain pad, Rth(j-a) is 450–480 K/W. Double-sided copper with thermal vias can reduce this by ~30%, but the datasheet specifies only single-sided conditions. Rth(j-sp) remains 115 K/W regardless, reflecting direct die-to-solder-joint conduction.

Can the two transistors be used in parallel to increase current handling?

No. The transistors are electrically isolated but not matched for parallel operation-VGS(th) variation (±0.5 V) and RDS(on) mismatch cause uneven current sharing. For higher current, use a single-channel part with appropriate rating, not paralleling NX7002AKS,115 channels.

Does NX7002AKS,115 have integrated body diode functionality?

Yes. Each N-channel MOSFET includes an intrinsic source-drain diode with VSD = 0.47–1.2 V at IS = 115 mA. This diode conducts during reverse current events (e.g., inductive kickback), but is not rated for continuous forward conduction beyond its specified source current limit of 170 mA.

NX7002AKS,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
170mA
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.43nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
17pF @ 10V
Power - Max:
220mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

NX7002AKS,115 FAQ

1.How can I place an order for NX7002AKS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for NX7002AKS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NX7002AKS,115 reliable?

The price and inventory of NX7002AKS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX7002AKS,115 is usually 5 days.

3.What payment methods are accepted for NX7002AKS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX7002AKS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NX7002AKS,115?

NX7002AKS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NX7002AKS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NX7002AKS,115?

For technical support, including NX7002AKS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX7002AKS,115 requirements.

6.How does Aetrix verify that NX7002AKS,115 is sourced from the original manufacturer or authorized distributors?

All NX7002AKS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX7002AKS,115 meets industry standards.

7.What is the process for return or replacement of NX7002AKS,115?

All NX7002AKS,115 units undergo pre-shipment inspection (PSI). If there is an issue with NX7002AKS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NX7002AKS,115 part is unused and in its original packaging.

Return procedure for NX7002AKS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NX7002AKS,115 Tags

  • NX7002AKS,115
  • NX7002AKS,115 PDF
  • NX7002AKS,115 Datasheet
  • NX7002AKS,115 Specifications
  • NX7002AKS,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. NX7002AKS,115
  • Buy NX7002AKS,115
  • NX7002AKS,115 Price
  • NX7002AKS,115 Distributor
  • NX7002AKS,115 Supplier
  • NX7002AKS,115 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER