Nexperia USA Inc. NX7002BK215

Overview

NX7002BK215 from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching with logic-level gate drive compatibility (V_GS(th) = 1.1–2.1 V), R_DS(on) = 2.2 Ω @ V_GS = 10 V / I_D = 200 mA, and ultra-fast switching (t_d(on) = 4.7 ns, t_f = 2.9 ns). It serves in relay drivers, high-speed line drivers, and compact loadswitch applications where space-constrained PCBs demand high efficiency and ESD robustness (>2 kV HBM).

For engineers reviewing the NX7002BK215 datasheet, NX7002BK215 pinout, NX7002BK215 application, or NX7002BK215 equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge behavior, safe operating area limits, and real-world design implications - all extracted from Nexperia's official 2015 product data sheet.

Technical Context

This discrete MOSFET employs Trench technology to achieve low R_DS(on) and high transconductance (g_fs = 600 mS), enabling efficient conduction at low gate voltages. Its gate threshold voltage range (1.1–2.1 V) ensures reliable turn-on with standard 3.3 V or 5 V logic outputs without external level shifting.

The device features integrated source-drain diode (V_SD = 0.87–1.2 V @ I_S = 200 mA), defined safe operating area (SOA) up to 0.9 A peak drain current (t_p ≤ 10 µs), and thermal resistance R_th(j-sp) = 65–75 K/W when mounted on FR4 with 1 cm² drain pad - critical for sustained pulsed operation in compact power stages.

Key Specifications

Pinout & Package

Package: SOT23 (TO-236AB), surface-mounted plastic package with 3 leads; dimensions per IEC JEDEC outline sot023_po (L × W × H = 2.9 × 1.3 × 1.0 mm); requires 1 cm² copper pad on drain for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Compared with DMN2004K and BSS138BKS, NX7002BK215 offers superior R_DS(on) at 3.3 V drive, higher V_DS margin for industrial transients, and optimized thermal pad layout - making it the preferred choice for 24–48 V low-side switching where efficiency and reliability are prioritized over minimal gate charge.

Availability

NX7002BK215 is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching power supply auxiliary circuits requiring stable component supply across automotive infotainment, industrial automation, and medical instrumentation programs.

Supply support for NX7002BK215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for automotive, industrial, and mobile markets.

NX7002BK215 belongs to Nexperia's TrenchMOS family - engineered specifically for space-constrained, logic-driven switching applications demanding low R_DS(on), fast transitions, and robust ESD tolerance in standard SMD packages.

FAQ

What is the maximum continuous drain current for NX7002BK215 at 100 °C ambient temperature?

The maximum continuous drain current is 170 mA at T_amb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with V_GS = 10 V. This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures on standard FR4 PCBs.

Can NX7002BK215 be used with 3.3 V microcontroller GPIO without a gate driver?

Yes - its gate threshold voltage range (1.1–2.1 V) and logic-level compatibility ensure full enhancement at 3.3 V, with R_DS(on) = 2.5–3.2 Ω @ V_GS = 5 V and I_D = 200 mA. Verified operation at 3.3 V is confirmed by transfer characteristics (Fig. 10) showing >100 mA drain current at V_GS = 3.3 V and T_j = 25 °C.

What is the recommended PCB layout for achieving the 1670 mW total power dissipation rating?

To achieve the 1670 mW P_tot rating, the drain pad must be connected to a minimum 1 cm² single-sided copper area on FR4, tin-plated, using the standard SOT23 footprint per Fig. 19. This layout achieves R_th(j-sp) = 65–75 K/W, enabling full power handling at T_sp = 25 °C.

Does NX7002BK215 include intrinsic body diode functionality, and what are its key parameters?

Yes - it integrates a source-drain diode with forward voltage V_SD = 0.87–1.2 V at I_S = 200 mA and T_j = 25 °C (Table 7). The diode supports freewheeling in inductive loads and reverse polarity protection, but is not rated for continuous conduction above 200 mA due to thermal limitations.