Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors NX7002BKMBYL

Part No.:
NX7002BKMBYL
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixNX7002BKMBYL.pdf
Description:
NEXPERIA NX7002B - 60V, N-CHANNE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:55,002

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NX7002BKMB from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in a DFN1006B-3 (SOT883B) ultra-small surface-mount package, rated for 350 mA continuous drain current at 25 °C ambient, with 2.2 Ω typical RDS(on) at VGS = 10 V and logic-level gate drive compatibility - used as a low-side load switch in space-constrained portable electronics.

For engineers reviewing the NX7002BKMB datasheet, NX7002BKMB pinout, NX7002BKMB application, or NX7002BKMB equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge timing data, and validated alternatives for relay driver, high-speed line driver, and switching circuit designs requiring sub-1 mm² footprint and fast turn-on/turn-off performance.

Technical Context

This device uses Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 1 nC). Its logic-level compatibility (VGS(th) = 1.1–2.1 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The DFN1006B-3 package features a thermally enhanced drain pad (1 cm² mounting area), delivering Rth(j-sp) = 35–40 K/W and supporting up to 3.1 W total power dissipation at solder point temperature of 25 °C - critical for thermally dense PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V maximum drain-source voltage - supports operation in 24 V industrial bus and 48 V PoE-powered systems with margin.
RDS(on) 2.2 Ω typical at VGS = 10 V, ID = 200 mA, Tj = 25 °C - ensures <100 mW conduction loss at 200 mA, minimizing self-heating in battery-powered devices.
QG(tot) 1 nC total gate charge - enables nanosecond-scale switching (td(on) = 4.7 ns, tf = 2.9 ns) with low drive current requirements.
VGS(th) 1.6 V typical gate threshold voltage - guarantees reliable turn-on with 3.3 V GPIOs and avoids unintended conduction near 0 V.
ID (max) 350 mA continuous drain current at Tamb = 25 °C - suitable for driving small solenoids, LEDs, and signal-path loads in wearables and IoT sensors.
ESD Rating >2 kV HBM - provides robust handling during automated assembly and board-level integration without additional protection circuitry.

Pinout & Package

DFN1006B-3 (SOT883B) is a leadless ultra-small plastic package measuring 1.0 × 0.6 × 0.37 mm with three solder lands and a thermally optimized drain pad. The package is designed for reflow soldering on FR4 PCBs with single-sided copper and tin-plated finish.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal accepting logic-level input; requires no external gate resistor for typical 3.3 V/5 V MCU drive due to low QG.
2 S (Source) Reference node for gate drive and current return path; connected to system ground in low-side switch configuration.
3 D (Drain) High-current output terminal; internally connected to large-area copper pad for thermal conduction to PCB plane.

Key Features

Feature Design Value
Logic-level compatible Operates fully enhanced with VGS ≥ 3.5 V - eliminates need for gate driver ICs when driven by standard microcontroller I/O pins.
Very fast switching td(on) = 4.7 ns, tf = 2.9 ns - reduces switching losses in PWM-controlled loads operating above 1 MHz.
Trench MOSFET technology Enables 2.2 Ω RDS(on) in 1.0 × 0.6 mm footprint - achieves higher current density than planar MOSFETs of comparable voltage rating.
ESD protection >2 kV HBM Withstands electrostatic discharge events common in SMT assembly lines - lowers risk of field failure due to ESD-induced gate oxide damage.

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Driving coil of miniature signal relays in telecom interface cards and PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current with fast turn-off to suppress back-EMF-induced arcing.

Use Value: 2.9 ns fall time minimizes coil de-energization delay, enabling >300 kHz relay cycling without contact welding.

Use Scenario: Transmitting digital control signals across short PCB traces or flex cables in display timing controllers.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain bus configurations requiring sub-10 ns edge rates.

Use Value: 4.7 ns turn-on delay and 2.2 Ω RDS(on) ensure clean 3.3 V logic transitions with <100 ps jitter under 50 Ω load.

Low-Side Load Switch Switching Circuits

Use Scenario: Power gating of sensor subsystems in battery-powered medical wearables to extend runtime.

IC Role / Device Role / Timing Role: Controlled power path switch enabling software-initiated shutdown of non-critical peripherals.

Use Value: 1.6 V VGS(th) ensures full enhancement at 2.8 V Li-ion battery minimum, maintaining regulation down to 2.5 V.

Use Scenario: Pulse-width modulated dimming of RGB LED strings in smart lighting modules.

IC Role / Device Role / Timing Role: High-frequency synchronous switch in constant-current LED driver feedback loop.

Use Value: 1 nC QG(tot) allows efficient 2 MHz PWM operation with <5 µA average gate drive current from MCU timer output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN10H023LPS-13 Higher VDS (100 V), lower RDS(on) (2.3 mΩ), larger TSOP-6 package (3.05 × 1.65 mm) Supports higher bus voltages but occupies >8× more PCB area; not suitable for ultra-compact designs. Select when 100 V breakdown margin or sub-100 mΩ conduction loss is required, and board space permits larger footprint.
FDN306P P-channel, −20 V VDS, 0.35 Ω RDS(on), same SOT-723 (DFN1006) package Requires high-side configuration and inverted logic control; unsuitable for low-side switch topology without redesign. Choose only if high-side switching is mandatory and gate drive inversion can be accommodated in firmware/hardware.

Compared with DMN10H023LPS-13 and FDN306P, the NX7002BKMB uniquely balances 60 V rating, 2.2 Ω RDS(on), and 1.0 × 0.6 mm footprint - making it the only option among the three that fits sub-1 mm² space constraints while maintaining logic-level drive and 350 mA capability.

Availability

NX7002BKMB is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply across production volumes and long-lifecycle programs.

Supply support for NX7002BKMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process innovation and automotive-grade quality systems.

The NX7002BKMB belongs to Nexperia's TrenchMOS family, engineered specifically for space-constrained, low-power switching applications where logic-level drive, fast switching, and ultra-small packaging are essential design requirements.

FAQ

What is the maximum continuous drain current for NX7002BKMB at 100 °C ambient temperature?

The NX7002BKMB supports 200 mA continuous drain current at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits of the DFN1006B-3 package on standard FR4 PCBs and ensures safe junction temperature operation below 150 °C.

Does NX7002BKMB require a gate resistor for MCU-driven switching?

The NX7002BKMB does not require an external gate resistor when driven by typical 3.3 V or 5 V microcontroller GPIOs, due to its low total gate charge (1 nC) and logic-level threshold. However, a small series resistor (10–47 Ω) may be added to dampen ringing in high-frequency PWM applications.

What is the thermal resistance from junction to solder point (Rth(j-sp)) for NX7002BKMB?

The NX7002BKMB has a typical Rth(j-sp) of 35 K/W, with a maximum of 40 K/W, measured under conditions of FR4 PCB with single-sided copper, tin-plated finish, and 1 cm² drain mounting pad - enabling accurate thermal modeling for compact PCB layouts.

Can NX7002BKMB be used in automotive applications?

No - the NX7002BKMB is not automotive-qualified. Per Nexperia's legal disclaimers, unless explicitly stated as automotive qualified in the datasheet, the device is not tested or warranted for automotive use, including AEC-Q101 stress testing or temperature range compliance.

What marking code identifies NX7002BKMB on the physical package?

The NX7002BKMB is marked with binary code "0101 0111" on the top surface of the DFN1006B-3 package, as shown in Figure 1. This 8-bit code is read left-to-right with pin 1 indicated by a dot or notch, and is used for traceability and variant identification during assembly inspection.

NX7002BKMBYL Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
3-XFDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
23.6 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
350mW (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1006B-3

NX7002BKMBYL FAQ

1.How can I place an order for NX7002BKMBYL through Aetrix?

Please submit a Request for Quotation (RFQ) for NX7002BKMBYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NX7002BKMBYL reliable?

The price and inventory of NX7002BKMBYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NX7002BKMBYL is usually 5 days.

3.What payment methods are accepted for NX7002BKMBYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NX7002BKMBYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NX7002BKMBYL?

NX7002BKMBYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NX7002BKMBYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NX7002BKMBYL?

For technical support, including NX7002BKMBYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NX7002BKMBYL requirements.

6.How does Aetrix verify that NX7002BKMBYL is sourced from the original manufacturer or authorized distributors?

All NX7002BKMBYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NX7002BKMBYL meets industry standards.

7.What is the process for return or replacement of NX7002BKMBYL?

All NX7002BKMBYL units undergo pre-shipment inspection (PSI). If there is an issue with NX7002BKMBYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NX7002BKMBYL part is unused and in its original packaging.

Return procedure for NX7002BKMBYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NX7002BKMBYL Tags

  • NX7002BKMBYL
  • NX7002BKMBYL PDF
  • NX7002BKMBYL Datasheet
  • NX7002BKMBYL Specifications
  • NX7002BKMBYL Images
  • NXP Semiconductors
  • NXP Semiconductors NX7002BKMBYL
  • Buy NX7002BKMBYL
  • NX7002BKMBYL Price
  • NX7002BKMBYL Distributor
  • NX7002BKMBYL Supplier
  • NX7002BKMBYL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER