Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PH1225AL,115

Part No.:
PH1225AL,115
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
SOT-1023, 4-LFPAK
Datasheet:
AetrixPH1225AL,115.pdf
Description:
MOSFET N-CH 25V 100A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:20,733

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PESD7V0R1BSF from Nexperia is a bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) ultra-small surface-mount package, designed for safeguarding high-speed data lines with 0.1 pF typical capacitance, ±10 kV IEC 61000-4-2 contact ESD rating, and 7 V reverse standoff voltage. It protects one bidirectional signal line in portable electronics interfaces where low capacitance and fast transient clamping are critical.

For engineers reviewing the PESD7V0R1BSF datasheet, PESD7V0R1BSF pinout, PESD7V0R1BSF application, or PESD7V0R1BSF equivalent, key selection criteria include ultra-low capacitance for GHz-range signal integrity, bidirectional clamping behavior, compact 0.6 × 0.3 mm footprint, and compatibility with high-speed USB, HDMI, and MIPI interfaces requiring minimal parasitic loading.

Technical Context

This device implements a dual-cathode, bidirectional TVS structure optimized for electrostatic discharge suppression on single-ended, polarity-agnostic signal lines. Its symmetrical V-I characteristics enable clamping of both positive and negative transients without DC bias dependency.

It operates within −40 °C to +125 °C ambient range, delivers 5 V clamping at 4.5 A (8/20 µs), and maintains sub-0.15 pF capacitance up to 2.5 GHz - enabling use in 5 Gbps+ serial links while preserving signal fidelity and insertion loss below −10 dB across 0–10 GHz.

Key Specifications

Parameter Value and Actual Design Meaning
Diode capacitance (Cd) 0.1 pF typical at 1 MHz - ensures negligible loading on ultra-high-speed signals such as USB 3.2 Gen 2 or MIPI D-PHY v2.1.
Reverse standoff voltage (VRWM) 7 V - compatible with 3.3 V and 5 V interface rails without leakage-induced logic errors.
ESD rating (IEC 61000-4-2) ±10 kV contact / ±15 kV air - meets industrial and consumer ESD immunity requirements per EN 61000-4-2 Level 4.
Clamping voltage (VCL) 5 V at IPP = 4.5 A (8/20 µs) - limits transient overvoltage to safe levels for downstream PHYs and SerDes receivers.
Dynamic resistance (Rdyn) 0.45 Ω typical - enables rapid energy dissipation during ESD events, minimizing voltage overshoot.
Package DSN0603-2 (SOD962-2), 0.6 × 0.3 × 0.3 mm - supports ultra-dense PCB layouts in smartphones, wearables, and wireless modules.

Pinout & Package

DSN0603-2 (SOD962-2) is a leadless, two-terminal ultra-small surface-mount package with cathode markings on both terminals. The device has no anode connection; both pins serve as cathodes for opposing polarity clamping paths.

Pin/Terminal Circuit Role Design Meaning
1 (K1) Cathode of diode 1 Forms one half of the bidirectional clamping pair; connects to protected line and ground return path.
2 (K2) Cathode of diode 2 Completes the symmetrical clamping structure; enables equal positive/negative transient suppression without polarity constraints.

Key Features

Feature Design Value
Bidirectional ESD protection Clamps ± transients on a single line without DC bias or polarity restrictions - ideal for AC-coupled differential pairs or shared-bus interfaces.
Ultra-low 0.1 pF capacitance Maintains signal integrity up to 10 GHz; insertion loss remains below −10 dB, supporting 5+ Gbps data rates in USB, HDMI, and MIPI applications.
7 V reverse standoff voltage Allows direct placement on 3.3 V and 5 V signal lines without forward conduction or leakage-induced logic faults under normal operation.
±10 kV IEC 61000-4-2 ESD rating Provides robust system-level ESD immunity for handheld and portable devices subjected to frequent human-body-model discharges.

Applications

USB 3.x Interface Protection HDMI 2.1 Data Lane Protection

Use Scenario: Protecting SuperSpeed TX/RX differential pairs in laptop docking stations and external SSD enclosures.

IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed immediately adjacent to USB Type-C connector, clamping ESD before reaching controller PHY.

Use Value: 0.1 pF capacitance prevents signal degradation at 10 Gbps, while 5 V clamping ensures USB 3.2 Gen 2 receiver input stays within absolute maximum ratings.

Use Scenario: Safeguarding HDMI 2.1 TMDS channels in 4K/120 Hz AV receivers and gaming monitors.

IC Role / Device Role / Timing Role: Line-level ESD clamp on each TMDS+/- pair, mounted within 2 mm of HDMI receptacle per layout guidelines.

Use Value: Sub-0.15 pF capacitance preserves eye diagram integrity at 48 Gbps aggregate bandwidth; ±10 kV rating covers end-user plug/unplug events.

MIPI D-PHY v2.1 Camera Link PCIe Gen 4 Reference Clock Line

Use Scenario: ESD hardening of camera sensor module flex cables in smartphone main/rear camera assemblies.

IC Role / Device Role / Timing Role: Single-line bidirectional protector on MIPI clock or data lanes, leveraging symmetry for AC-coupled signaling.

Use Value: 0.1 pF Cd avoids jitter accumulation in 2.5 Gbps D-PHY clock; 7 V VRWM aligns with typical MIPI I/O voltage domains.

Use Scenario: Protecting 100 MHz PCIe Gen 4 reference clock traces between host CPU and add-in card edge connectors.

IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on differential clock pair, placed at board edge to intercept ESD before clock buffer input.

Use Value: Minimal phase noise impact due to <0.15 pF loading; 5 V clamping prevents clock buffer latch-up during handling or connector mating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor ESD7L5.0DT5G 0.35 pF capacitance, 5.0 V VRWM, SOD-923 package (0.8 × 0.6 mm) Higher capacitance limits use to ≤1 Gbps interfaces; larger footprint reduces routing density. Select when lower clamping voltage (4.8 V) is prioritized over GHz signal integrity.
Vishay VEML3020-001 0.25 pF capacitance, 7.0 V VRWM, DFN1006-2 package (1.0 × 0.6 mm) 2× larger body size increases parasitic inductance; less suitable for >3 Gbps links. Prefer for cost-sensitive industrial HMI designs where 0.25 pF is acceptable and board space permits.

Compared with ESD7L5.0DT5G and VEML3020-001, PESD7V0R1BSF delivers the lowest capacitance (0.1 pF) in the smallest footprint (0.6 × 0.3 mm), making it uniquely suited for next-generation mobile and high-speed serial interfaces where signal fidelity and miniaturization are co-constrained.

Availability

PESD7V0R1BSF is available at Aetrix Electronics and suitable for USB 3.2, HDMI 2.1, MIPI D-PHY, and PCIe Gen 4 reference clock applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PESD7V0R1BSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization.

The TrEOS Protection family, including PESD7V0R1BSF, is engineered specifically for ultra-high-speed interface protection - targeting mobile, computing, and communications systems where ESD robustness must coexist with GHz signal integrity.

FAQ

What is the maximum operating temperature for PESD7V0R1BSF?

The PESD7V0R1BSF supports an ambient operating temperature range of −40 °C to +125 °C and a junction temperature limit of 150 °C. This allows deployment in thermally demanding environments such as inside smartphones, automotive infotainment displays, and industrial gateways without derating under normal ESD event conditions.

Can PESD7V0R1BSF be used on DC-powered lines?

No - the PESD7V0R1BSF is explicitly not designed for lines connected to a DC supply, as stated in its application information section. It is intended only for AC-coupled or bidirectional signal lines with no steady-state DC bias, such as USB data pairs, HDMI TMDS, or MIPI D-PHY lanes.

What is the clamping voltage of PESD7V0R1BSF at 8 A TLP current?

At 8 A Transmission Line Pulse (TLP) current, the PESD7V0R1BSF exhibits a typical clamping voltage of 6 V. This value is measured under non-repetitive TLP conditions (tp = 100 ns) and ensures downstream ICs remain within safe operating voltage limits during severe ESD events.

How does the DSN0603-2 package affect PCB layout for PESD7V0R1BSF?

The DSN0603-2 package requires precise placement: the PESD7V0R1BSF must be located within 2 mm of the protected connector, with minimized trace length and dedicated low-inductance ground vias. Its 0.6 × 0.3 mm body demands accurate stencil design and reflow profile control to avoid tombstoning during assembly.

Is PESD7V0R1BSF automotive qualified?

No - the PESD7V0R1BSF is not automotive qualified. Nexperia's official documentation states that unless explicitly marked as automotive qualified, the product is neither tested nor warranted for automotive applications. For AEC-Q200 compliance, alternative automotive-grade ESD protectors must be selected.

PH1225AL,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
SOT-1023, 4-LFPAK
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
6380 pF @ 12 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56; Power-SO8

PH1225AL,115 FAQ

1.How can I place an order for PH1225AL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH1225AL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH1225AL,115 reliable?

The price and inventory of PH1225AL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH1225AL,115 is usually 5 days.

3.What payment methods are accepted for PH1225AL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH1225AL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH1225AL,115?

PH1225AL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH1225AL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH1225AL,115?

For technical support, including PH1225AL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH1225AL,115 requirements.

6.How does Aetrix verify that PH1225AL,115 is sourced from the original manufacturer or authorized distributors?

All PH1225AL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH1225AL,115 meets industry standards.

7.What is the process for return or replacement of PH1225AL,115?

All PH1225AL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH1225AL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH1225AL,115 part is unused and in its original packaging.

Return procedure for PH1225AL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PH1225AL,115 Tags

  • PH1225AL,115
  • PH1225AL,115 PDF
  • PH1225AL,115 Datasheet
  • PH1225AL,115 Specifications
  • PH1225AL,115 Images
  • NXP Semiconductors
  • NXP Semiconductors PH1225AL,115
  • Buy PH1225AL,115
  • PH1225AL,115 Price
  • PH1225AL,115 Distributor
  • PH1225AL,115 Supplier
  • PH1225AL,115 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER