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NXP Semiconductors PH16030L,115
- Part No.:
- PH16030L,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PH16030L,115.pdf
- Description:
- MOSFET N-CH 30V 38A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:5,097
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Product details
Overview
PH16030L,115 from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET designed for high-efficiency DC-to-DC conversion and load switching in portable systems. It delivers 38 A continuous drain current at VGS = 10 V, exhibits RDS(on) ≤ 16.9 mΩ at Tj = 25 °C, and features low gate charge (Qgd = 2.9 nC typ) for fast switching in synchronous buck converters.
For engineers reviewing the PH16030L,115 datasheet, PH16030L,115 pinout, PH16030L,115 application, or PH16030L,115 equivalent, this device is selected for compact, thermally efficient high-current switching where logic-level gate drive (VGS(th) = 1–2 V), low thermal resistance (Rth(j-mb) = 3 K/W), and SO8-equivalent footprint are critical design requirements.
Technical Context
This MOSFET employs TrenchMOS™ technology to achieve enhanced conduction efficiency and reduced gate-drain charge (Qgd = 2.9 nC), directly lowering switching losses in hard-switched topologies. Its mounting base (mb) is internally connected to the drain, enabling direct thermal coupling to PCB copper planes for effective heat extraction.
The device supports logic-level gate drive with VGS(th) ranging from 0.6 V (Tj = 150 °C) to 2.2 V (Tj = −55 °C), ensuring reliable turn-on from 3.3 V or 5 V controllers. Avalanche ruggedness (EDS(AL)S = 44 mJ) provides robustness against inductive energy spikes in unclamped inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V output stages in point-of-load converters. |
| ID (DC) | 38 A at Tmb = 25 °C - Continuous current capability enables high-power density designs without external heatsinking under moderate board thermal conditions. |
| RDS(on) | 14.1 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Low on-resistance minimizes conduction loss and junction temperature rise in high-current paths. |
| Qgd | 2.9 nC (typ) - Low Miller charge reduces switching transition time and gate driver power demand in high-frequency (>500 kHz) applications. |
| Rth(j-mb) | 3 K/W - Thermal resistance from junction to mounting base allows >13 W dissipation at ΔT = 40 K, supporting high-power operation with minimal PCB copper area. |
| VGS(th) | 1.5 V (typ) at Tj = 25 °C - Logic-compatible threshold ensures full enhancement with standard 3.3 V microcontroller GPIO or PWM controller outputs. |
| EDS(AL)S | 44 mJ - Non-repetitive avalanche energy rating supports reliable operation during transient overcurrent events in motor drives or converter startup. |
Pinout & Package
PH16030L,115 is housed in the SOT669 (LFPAK) package - a plastic single-ended surface-mount package with 4 leads and an exposed mounting base optimized for thermal performance and SO8-equivalent PCB footprint compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection for internal die; electrically tied together and bonded to leadframe; forms low-inductance return path for high di/dt currents. |
| 4 | Gate (G) | Control terminal for MOSFET channel modulation; requires <±15 V absolute maximum gate-source voltage per limiting values. |
| mb (Mounting Base) | Drain (D) | Exposed metal pad on underside of package, internally connected to drain; serves as primary thermal path and high-current drain node; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1–2 V range ensures full enhancement from 3.3 V or 5 V controllers without level-shifting circuitry. |
| Low thermal resistance | Rth(j-mb) = 3 K/W enables >13 W continuous power dissipation with only 40 K temperature rise above mounting base - ideal for space-constrained thermal designs. |
| SO8-equivalent footprint | SOT669 (LFPAK) outline matches SO8 land pattern pitch and pad layout, allowing drop-in replacement in existing layouts with improved thermal performance. |
| Low gate charge | Qg(tot) = 8.2 nC (VGS = 4.5 V) and Qgd = 2.9 nC reduce switching losses and gate driver stress in high-frequency DC-DC converters. |
| TrenchMOS™ technology | Enables higher cell density and lower RDS(on) per die area versus planar MOSFETs, delivering superior figure-of-merit (RDS(on) × Qg) for efficiency-critical applications. |
Applications
| DC-DC Synchronous Buck Converter | Portable Power Bank Load Switch |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load regulation in industrial IoT gateways. IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight duty-cycle control. Use Value: RDS(on) ≤ 16.9 mΩ and Qgd = 2.9 nC minimize both conduction and switching losses, achieving >94% efficiency at 15 A output. |
Use Scenario: Input power path management in USB-C PD power banks with 20 V input and dual-battery charging. IC Role / Device Role / Timing Role: Load switch controlling battery pack connection/disconnection during charge/discharge cycles. Use Value: Logic-level VGS(th) ensures clean turn-on from 3.3 V system MCU; low RDS(on) limits voltage drop and self-heating during 20 A peak discharge. |
| Motor Driver Half-Bridge Leg | Hot-Swap Controller Back-End Switch |
Use Scenario: 24 V brushed DC motor control in handheld medical devices requiring silent, low-EMI commutation. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, driven by gate driver IC with 4.5 V output. Use Value: VGS(th) ≤ 2 V and RDS(on) ≤ 23.5 mΩ at VGS = 4.5 V ensure robust conduction even at elevated junction temperatures up to 150 °C. |
Use Scenario: Inrush current limiting and fault isolation in 12 V telecom line cards with hot-plug capability. IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap controller (e.g., LTC4215). Use Value: EDS(AL)S = 44 mJ and IDM = 100 A support safe clamping of inductive transients during short-circuit events without device failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN1R0-30YL,115 | RDS(on) = 1.0 mΩ (typ) at VGS = 10 V - significantly lower on-resistance but higher Qg (27 nC); larger LFPAK56 package (SOT1205). | Better suited for ultra-high-current (>60 A), low-duty-cycle applications where conduction loss dominates; less optimal for high-frequency switching due to higher gate charge. | Select when minimizing I²R loss is priority and board space allows larger footprint; not a direct footprint replacement for PH16030L,115. |
| IPB037N04LGATMA1 | RDS(on) = 3.7 mΩ (typ) at VGS = 10 V; TO-263 (D2PAK) package; VGS(th) = 1.2–2.2 V; Qgd = 5.5 nC. | Higher thermal mass and different mounting interface; better for high-peak-power, lower-frequency (<200 kHz) applications with forced-air cooling. | Choose when legacy D2PAK layout exists or when higher avalanche energy (110 mJ) is required; requires PCB redesign due to package mismatch. |
Compared with PSMN1R0-30YL,115 and IPB037N04LGATMA1, PH16030L,115 offers the best balance of low RDS(on), low Qgd, and SO8-compatible LFPAK footprint - making it optimal for space-constrained, high-frequency DC-DC and portable power designs where thermal performance and gate drive simplicity are jointly critical.
Availability
PH16030L,115 is available at Aetrix Electronics and suitable for DC-DC converters, portable power management systems, and motor control modules requiring stable component supply across long-lifecycle industrial and consumer programs.
Supply support for PH16030L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power management heritage.
PH16030L,115 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in battery-powered and thermally constrained systems.
FAQ
What is the maximum continuous drain current rating for PH16030L,115 at 100 °C mounting base temperature?
The PH16030L,115 supports 24 A continuous drain current (ID) at Tmb = 100 °C and VGS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints and ensures safe operation within the device's 150 °C maximum junction temperature limit.
Is PH16030L,115 compatible with 3.3 V gate drive without external level shifting?
Yes - PH16030L,115 has a typical gate-source threshold voltage (VGS(th)) of 1.5 V at 25 °C and remains fully enhanced down to 0.6 V at 150 °C. At VGS = 3.3 V, it achieves RDS(on) ≤ 23.5 mΩ (typ), confirming robust logic-level operation without level-shifting circuitry.
How is thermal management implemented in the PH16030L,115 package?
PH16030L,115 uses the SOT669 (LFPAK) package with an exposed mounting base (mb) internally connected to the drain. This base serves as the primary thermal path, offering Rth(j-mb) = 3 K/W. Effective cooling requires soldering the mb pad to ≥200 mm² of 2 oz copper with ≥4 thermal vias to inner ground planes.
Does PH16030L,115 include integrated avalanche energy rating?
Yes - PH16030L,115 is rated for 44 mJ non-repetitive drain-source avalanche energy (EDS(AL)S) under defined test conditions (unclamped inductive load, ID = 21 A, tp = 0.1 ms, VDD ≤ 25 V). This confirms ruggedness against transient inductive kickback in motor and converter applications.
What is the gate charge profile of PH16030L,115 at 4.5 V drive voltage?
At VGS = 4.5 V, PH16030L,115 exhibits Qg(tot) = 8.2 nC (typ), Qgs = 2.3 nC, and Qgd = 2.9 nC. The low Miller charge (Qgd) contributes to fast voltage transition across the drain-source during switching, reducing overlap loss in synchronous rectifiers.
PH16030L,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 4.5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 41.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PH16030L,115 FAQ
1.How can I place an order for PH16030L,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PH16030L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PH16030L,115 reliable?
The price and inventory of PH16030L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH16030L,115 is usually 5 days.
3.What payment methods are accepted for PH16030L,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH16030L,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PH16030L,115?
PH16030L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PH16030L,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PH16030L,115?
For technical support, including PH16030L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH16030L,115 requirements.
6.How does Aetrix verify that PH16030L,115 is sourced from the original manufacturer or authorized distributors?
All PH16030L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH16030L,115 meets industry standards.
7.What is the process for return or replacement of PH16030L,115?
All PH16030L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH16030L,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PH16030L,115 part is unused and in its original packaging.
Return procedure for PH16030L,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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