NXP Semiconductors PH1875L,115

Overview

PH1875L,115 from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS power MOSFET in LFPAK (SOT669) package, designed for high-efficiency DC power switching. It features 75 V V_DS, 45.8 A continuous drain current at T_mb = 25 °C, 13.3 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, 15.3 nC Q_GD, and low thermal resistance of 2 K/W junction-to-mounting-base - enabling compact motor control and DC-DC converter designs.

For engineers reviewing the PH1875L,115 datasheet, PH1875L,115 pinout, PH1875L,115 application, or PH1875L,115 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2 V), low conduction loss under 20 A loads, mounting-base thermal management capability, and avalanche energy rating of 165 mJ for inductive load robustness.

Technical Context

This device uses TrenchMOS technology to achieve low R_DS(on) and fast switching with minimal gate charge. Its gate threshold voltage range (1–2 V at 25 °C) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while its 75 V breakdown rating supports 48 V bus systems and automotive 24 V applications.

The SOT669 (LFPAK) package integrates a thermally optimized mounting base directly connected to the drain, enabling efficient heat transfer to PCB copper or heatsinks. Thermal resistance R_th(j-mb) = 2 K/W allows sustained 29 A operation at T_mb = 100 °C, and its unclamped inductive avalanche rating (EDS(AL)S = 165 mJ) supports rugged operation in relay replacement and solenoid driving.

Key Specifications

Pinout & Package

PH1875L,115 is housed in the SOT669 (LFPAK) plastic surface-mount package - a 4-lead, single-ended outline with an exposed mounting base electrically tied to the drain terminal for enhanced thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PBF and STL125N4LF6AG, PH1875L,115 offers optimal balance of 75 V rating, logic-level drive, and LFPAK thermal performance - making it uniquely suited for space-constrained 48 V industrial and automotive switching where mounting-base cooling is critical.

Availability

PH1875L,115 is available at Aetrix Electronics and suitable for brushed DC motor control, 48 V DC-DC converter primary switching, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for PH1875L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.

PH1875L,115 belongs to NXP's legacy TrenchMOS logic-level power MOSFET family, engineered for high-efficiency, thermally robust switching in space-constrained industrial and automotive power systems.

FAQ

What is the maximum gate-source voltage rating for PH1875L,115?

The PH1875L,115 has a maximum gate-source voltage (V_GS) rating of ±15 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤12 V during transient conditions, and gate resistors must be selected to suppress ringing without compromising switching speed. The PH1875L,115's low 1 Ω gate resistance supports fast, controlled transitions within this voltage envelope.

Can PH1875L,115 be used in high-frequency switching applications like 500 kHz DC-DC converters?

Yes, PH1875L,115 supports high-frequency operation up to 500 kHz due to its low dynamic parameters: Q_GD = 15.3 nC, t_f = 60 ns, and C_iss = 2600 pF at V_DS = 25 V. These values minimize switching losses and gate drive power requirements. However, thermal management remains critical - at 500 kHz, conduction and switching losses must be jointly evaluated using the provided SOA curves and thermal resistance (R_th(j-mb) = 2 K/W) to ensure T_j stays within −55 °C to +150 °C limits. PH1875L,115's performance is validated in such applications per its Figure 3 Safe Operating Area plot.

Does PH1875L,115 have built-in avalanche ruggedness, and how is it rated?

Yes, PH1875L,115 is fully rated for unclamped inductive avalanche with E_DS(AL)S = 165 mJ under defined test conditions: I_D = 26 A, t_p = 0.11 ms, V_DS ≤ 75 V, R_GS = 50 Ω, V_GS = 10 V, and starting T_j = 25 °C. This rating confirms robustness against inductive kickback in motor and solenoid drives without external snubbers. The PH1875L,115's TrenchMOS structure and optimized layout contribute to consistent avalanche performance across its operating temperature range.

What is the thermal resistance from junction to mounting base for PH1875L,115, and how does it affect PCB layout?

The PH1875L,115 has a thermal resistance R_th(j-mb) of 2 K/W from junction to mounting base, measured per JEDEC standards. This value assumes full-solder coverage of the exposed mounting base (pin mb) to ≥100 mm² of 2-oz copper on the PCB. To achieve rated current (e.g., 29 A at T_mb = 100 °C), designers must provide low-impedance thermal vias beneath the mounting base and avoid thermal isolation. The PH1875L,115's SOT669 package relies entirely on this mounting base path - unlike TO-220 or DPAK - so PCB layout directly determines thermal performance.

Is PH1875L,115 compatible with 3.3 V microcontroller GPIOs for direct gate drive?

Yes, PH1875L,115 is explicitly designed for logic-level drive: its gate-source threshold voltage V_GS(th) ranges from 1 V to 2 V at I_D = 1 mA and T_j = 25 °C, ensuring full enhancement with 3.3 V outputs. At V_GS = 4.5 V, R_DS(on) remains low (≤20 mΩ), supporting efficient operation even with marginal gate drive. However, for best dynamic performance, a dedicated gate driver is recommended above 100 kHz to manage Q_G(tot) = 33.4 nC. PH1875L,115's compatibility with 3.3 V logic is confirmed in its Figure 7 transfer characteristics and Table 5 static parameters.