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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PH20100S,115

Name: PH20100S,115
Brand: Nexperia USA Inc.
SKU: PH20100S,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH20100S,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PH20100S,115.pdf

Description:: MOSFET N-CH 100V 34.3A LFPAK56

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Product details

Overview

PH20100S,115 from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 100 V V_DS, 34.3 A continuous drain current at T_mb = 25 °C, and 62.5 W total power dissipation. It delivers low R_DS(on) of 19 mΩ (typ.) at V_GS = 10 V and T_j = 25 °C, enabling high-efficiency switching in DC-DC converters and SMPS.

For engineers reviewing the PH20100S,115 datasheet, PH20100S,115 pinout, PH20100S,115 application, or PH20100S,115 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 2 K/W), gate charge (Q_G(tot) = 39 nC), avalanche energy rating (250 mJ), and source-drain diode performance (V_SD = 0.8 V at I_S = 10 A).

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate drive complexity. Its 4-pin LFPAK package integrates a large mounting base connected directly to the drain, enabling efficient heat transfer to the PCB copper plane.

The device features a gate-source threshold voltage of 2–4 V (T_j = 25 °C), robust avalanche ruggedness (250 mJ unclamped), and dynamic parameters optimized for hard-switched topologies: Q_GD = 8.9 nC, C_iss = 2264 pF, and t_f = 9.3 ns - supporting high-frequency operation up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V input systems with 2× safety margin.
I_D (continuous)	34.3 A at T_mb = 25 °C - Enables high-current output stages without forced air cooling.
R_DS(on)	19 mΩ (typ.) at V_GS = 10 V, T_j = 25 °C - Limits conduction loss to ≤6.5 W at 18 A, critical for thermal management.
Q_G(tot)	39 nC - Determines gate driver power requirement; compatible with standard 1-A peak drivers.
R_th(j-mb)	2 K/W - Junction-to-mounting-base thermal resistance enables direct PCB heatsinking without external heatsinks.
E_AS	250 mJ (unclamped) - Supports reliable operation under inductive switching stress without external snubbers.
C_iss	2264 pF at V_DS = 25 V - Defines Miller capacitance impact on turn-on delay and dV/dt immunity.

Pinout & Package

PH20100S,115 is housed in the SOT669 (LFPAK) plastic surface-mount package - a single-ended, 4-lead outline with an exposed metal mounting base electrically connected to the drain. The package provides low thermal resistance (2 K/W) and high power density via direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate connection with low input capacitance (C_iss = 2264 pF); requires <4.7 Ω series resistance for optimal ringing control.
Mounting base	Drain (D)	Exposed drain pad soldered to PCB copper; serves as primary thermal path and high-current drain return.

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	19 mΩ typ. at 10 V drive - reduces conduction losses by >30% vs. planar MOSFETs in same package.
Optimized gate charge profile	Q_GD/Q_G = 22.8% - balances switching speed and EMI, enabling clean turn-off in hard-switched converters.
Integrated source terminals	Three parallel source pins - lowers source loop inductance, improving stability in synchronous rectification.
Robust avalanche capability	250 mJ unclamped energy - eliminates need for external clamping in flyback or LLC resonant designs.
Thermally enhanced LFPAK	R_th(j-mb) = 2 K/W - allows full 62.5 W power dissipation with only 25 °C rise above board temperature.

Applications

Server VRMs

Industrial SMPS

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with 10–20 A per phase.

Use Value: Low R_DS(on) and three-source-pin layout minimize conduction loss and parasitic inductance, improving efficiency by ≥0.8% at full load.

Use Scenario: Primary-side switch in 200–500 W industrial AC/DC power supplies with universal input (85–265 VAC).

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in flyback or forward topology with 100 kHz switching frequency.

Use Value: 100 V rating and 250 mJ avalanche energy enable reliable operation during line surges and transformer reset spikes without snubber circuits.

Telecom DC-DC Modules

Motor Drive Half-Bridges

Use Scenario: Intermediate bus converter (48 V → 12 V) in telecom base station power distribution units.

IC Role / Device Role / Timing Role: High-side switch in isolated forward or active-clamp forward topology.

Use Value: Fast fall time (9.3 ns) and low C_oss (290 pF) reduce switching loss and improve light-load efficiency over legacy DPAK devices.

Use Scenario: Low-side switch in 24–48 V BLDC motor drives for HVAC fans and industrial pumps.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch operating at 10–20 kHz with peak currents up to 30 A.

Use Value: Source-drain diode V_SD = 0.8 V enables efficient freewheeling without external Schottky, reducing BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N10N3 G	R_DS(on) = 3.4 mΩ (lower), but V_DS = 100 V same; Q_G = 52 nC (higher); LFPAK56 package (larger footprint)	Better conduction loss at high current; higher gate drive demand; less suitable for space-constrained layouts	Select when thermal budget is tight and board area permits larger package.
IRF3205PBF	R_DS(on) = 8 mΩ (lower), but TO-220 package; R_th(j-c) = 3.5 K/W (worse thermal path); no integrated mounting base	Requires external heatsink; unsuitable for high-density SMT-only designs; higher assembly cost	Select only for legacy through-hole production or where mechanical mounting dominates thermal design.

Compared with IPB034N10N3 G and IRF3205PBF, PH20100S,115 offers optimal balance of low R_DS(on), compact LFPAK footprint, and PCB-integrated thermal path - making it preferred for modern high-power-density SMT power stages where gate drive simplicity and thermal reliability are prioritized over absolute minimum on-resistance.

Availability

PH20100S,115 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom DC-DC modules, and motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for PH20100S,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.

PH20100S,115 belongs to Nexperia's TrenchMOS power MOSFET product line - engineered specifically for high-efficiency, high-reliability power conversion in computing, communications, and industrial equipment.

FAQ

What is the maximum continuous drain current for PH20100S,115 at 100 °C mounting base temperature?

The maximum continuous drain current is 21.6 A at T_mb = 100 °C, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints of the LFPAK package and must be verified against actual PCB copper area and airflow in the target application.

Does PH20100S,115 have an integrated body diode, and what is its forward voltage?

Yes - PH20100S,115 includes an inherent source-drain body diode with V_SD = 0.8 V (typ.) at I_S = 10 A and T_j = 25 °C, as shown in Figure 10. Its reverse recovery time is 110 ns, supporting moderate-frequency freewheeling in non-synchronous topologies.

Can PH20100S,115 be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS ≥ 10 V for R_DS(on) specification. Driving from 3.3 V yields high on-resistance (>500 mΩ) and excessive heating; a dedicated gate driver or level-shifting circuit is mandatory.

What is the recommended PCB layout practice for the mounting base of PH20100S,115?

The mounting base (drain) must be soldered to a minimum 200 mm² copper pour with ≥2 oz (70 µm) thickness and at least six thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner or back-side ground/power planes to achieve the rated R_th(j-mb) = 2 K/W.

PH20100S,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 34.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2264 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PH20100S,115 FAQ

1.How can I place an order for PH20100S,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH20100S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH20100S,115 reliable?

The price and inventory of PH20100S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH20100S,115 is usually 5 days.

3.What payment methods are accepted for PH20100S,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH20100S,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH20100S,115?

PH20100S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH20100S,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH20100S,115?

For technical support, including PH20100S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH20100S,115 requirements.

6.How does Aetrix verify that PH20100S,115 is sourced from the original manufacturer or authorized distributors?

All PH20100S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH20100S,115 meets industry standards.

7.What is the process for return or replacement of PH20100S,115?

All PH20100S,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH20100S,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH20100S,115 part is unused and in its original packaging.

Return procedure for PH20100S,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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