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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PH2625L,115

Name: PH2625L,115
Brand: NXP Semiconductors
SKU: PH2625L,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH2625L,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PH2625L,115.pdf

Description:: MOSFET N-CH 25V 100A LFPAK

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Product details

Overview

PH2625L,115 from Nexperia is a logic-level N-channel enhancement-mode Power MOSFET using TrenchMOS™ technology in LFPAK (SOT669) package. It delivers 25 V V_DS, 2.8 mΩ R_DS(on) @ V_GS = 10 V / I_D = 25 A / T_j = 25 °C, and 100 A continuous drain current at T_mb = 25 °C - optimized for high-efficiency DC-to-DC converters in notebook computers and voltage regulators.

For engineers reviewing the PH2625L,115 datasheet, PH2625L,115 pinout, PH2625L,115 application, or PH2625L,115 equivalent, key selection criteria include its low 4.1 mΩ R_DS(on) @ 4.5 V gate drive, 2 K/W junction-to-mounting-base thermal resistance, and 32 nC total gate charge - critical for synchronous buck stages requiring fast switching with minimal conduction loss.

Technical Context

This MOSFET employs TrenchMOS™ architecture to achieve low threshold voltage (1.0–2.0 V typ. @ T_j = 25 °C) and stable R_DS(on) across temperature. Its source-connected mounting base enables direct thermal coupling to PCB copper, supporting high-current operation without external heatsinks.

The device features integrated body diode with 0.85–1.2 V forward voltage at 25 A and 47 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Gate charge parameters (Q_G(tot) = 32 nC, Q_GD = 7.3 nC) support clean turn-on/turn-off transitions under 4.5 V logic-level drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus systems
R_DS(on) @ 10 V	2.8 mΩ max @ 25 A / 25 °C - enables <1 W conduction loss at 50 A in 12 V output stage
R_DS(on) @ 4.5 V	4.1 mΩ max @ 25 A / 25 °C - ensures robust operation with standard 3.3 V or 5 V gate drivers
I_D continuous	100 A @ T_mb = 25 °C - supports high-current power stages without forced air cooling
R_th(j-mb)	2 K/W - allows >50 W power dissipation with 100 °C ΔT to mounting base, simplifying thermal design
Q_G(tot)	32 nC - balances switching speed and gate driver loading for 500 kHz–1 MHz operation
V_GS(th)	1.0–2.0 V typ. @ 25 °C - guarantees reliable turn-on with low-voltage logic interfaces

Pinout & Package

Package: LFPAK (SOT669), also known as Power-SO8 - plastic single-ended surface-mounted package with exposed mounting base connected to drain, optimized for high-current thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three parallel source terminals reduce package inductance and improve current sharing in high-frequency switching
4 (G)	Gate	Single gate terminal with 1.5 Ω typical gate resistance - minimizes ringing and simplifies gate driver layout
Mounting base (mb)	Drain	Exposed copper pad electrically and thermally connected to drain - provides primary heat path to PCB and reduces thermal impedance

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables low R_DS(on) and stable threshold voltage across -55 °C to +150 °C operating range
Logic-level gate drive	Turns on fully with 4.5 V - eliminates need for level-shifting circuitry in 3.3 V/5 V control domains
Low Q_GD/Q_G(tot) ratio	7.3 nC / 32 nC = 22.8% - improves Miller immunity and reduces risk of false turn-on during high dV/dt events
Optimized for DC-DC converters	Combines low conduction loss (2.8 mΩ), fast switching (tr = 52 ns, tf = 30 ns), and robust avalanche rating (250 mJ non-repetitive)
LFPAK thermal performance	2 K/W R_th(j-mb) - delivers 3× higher power density than comparable SO-8 packages

Applications

High-Efficiency Synchronous Buck Converter	Notebook Computer VRM
Use Scenario: Primary high-side switch in 12 V input → 1.2 V output synchronous buck converter operating at 500 kHz. IC Role / Device Role / Timing Role: High-side power switch handling up to 60 A peak current; operates in hard-switched mode with precise dead-time control. Use Value: 2.8 mΩ R_DS(on) limits conduction loss to <1.0 W at 50 A, while 32 nC Q_G(tot) enables clean 50 ns turn-on with minimal gate driver stress.	Use Scenario: Core voltage regulator for Intel Core i7 CPU in ultrabook platform with tight thermal envelope. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; conducts during freewheeling interval with body diode and active conduction. Use Value: 0.85 V V_SD and 47 ns t_rr minimize reverse recovery loss; 4.1 mΩ R_DS(on) @ 4.5 V ensures full enhancement from 3.3 V controller outputs.
Industrial SMPS Secondary-Side Switch	Server Voltage Regulator Module (VRM)
Use Scenario: Secondary-side synchronous rectifier in 48 V input → 12 V isolated DC-DC module for factory automation PLCs. IC Role / Device Role / Timing Role: Low-side switch synchronized to primary-side PWM; handles bidirectional current during light-load discontinuous conduction mode. Use Value: 100 A I_D rating and 2 K/W thermal resistance allow sustained 40 A operation on 2 oz copper; avalanche energy rating (250 mJ) withstands transformer leakage spikes.	Use Scenario: High-current phase leg in 3+1 phase VRM supplying AMD EPYC processor in rack server. IC Role / Device Role / Timing Role: High-current power switch per phase; driven by dedicated gate driver IC with adaptive dead-time control. Use Value: Parallel source pins (pins 1–3) reduce package inductance below 0.5 nH, suppressing voltage overshoot during 100 A/µs current transients.

High-Efficiency Synchronous Buck Converter

Notebook Computer VRM

Use Scenario: Primary high-side switch in 12 V input → 1.2 V output synchronous buck converter operating at 500 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling up to 60 A peak current; operates in hard-switched mode with precise dead-time control.

Use Value: 2.8 mΩ R_DS(on) limits conduction loss to <1.0 W at 50 A, while 32 nC Q_G(tot) enables clean 50 ns turn-on with minimal gate driver stress.

Use Scenario: Core voltage regulator for Intel Core i7 CPU in ultrabook platform with tight thermal envelope.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; conducts during freewheeling interval with body diode and active conduction.

Use Value: 0.85 V V_SD and 47 ns t_rr minimize reverse recovery loss; 4.1 mΩ R_DS(on) @ 4.5 V ensures full enhancement from 3.3 V controller outputs.

Industrial SMPS Secondary-Side Switch

Server Voltage Regulator Module (VRM)

Use Scenario: Secondary-side synchronous rectifier in 48 V input → 12 V isolated DC-DC module for factory automation PLCs.

IC Role / Device Role / Timing Role: Low-side switch synchronized to primary-side PWM; handles bidirectional current during light-load discontinuous conduction mode.

Use Value: 100 A I_D rating and 2 K/W thermal resistance allow sustained 40 A operation on 2 oz copper; avalanche energy rating (250 mJ) withstands transformer leakage spikes.

Use Scenario: High-current phase leg in 3+1 phase VRM supplying AMD EPYC processor in rack server.

IC Role / Device Role / Timing Role: High-current power switch per phase; driven by dedicated gate driver IC with adaptive dead-time control.

Use Value: Parallel source pins (pins 1–3) reduce package inductance below 0.5 nH, suppressing voltage overshoot during 100 A/µs current transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R0-25YL,115	R_DS(on) = 2.0 mΩ @ 10 V (lower), Q_G(tot) = 37 nC (higher), same LFPAK package	Better conduction efficiency but higher gate drive demand; requires stronger gate driver for same switching speed	Preferred when minimizing I²R loss dominates over gate drive capability constraints
IPD22N03L G	R_DS(on) = 2.2 mΩ @ 10 V, TO-252 (DPAK) package, R_th(j-a) = 60 K/W (vs. 2 K/W j-mb)	Higher thermal resistance limits continuous current to ~40 A without heatsink; less suitable for compact high-power designs	Selected where board space permits larger footprint and thermal management uses heatsink rather than PCB copper

Compared with PSMN2R0-25YL,115 and IPD22N03L G, the PH2625L,115 offers optimal balance of low gate charge (32 nC), moderate R_DS(on) (2.8 mΩ), and superior thermal path (2 K/W) - making it ideal for space-constrained, high-frequency DC-DC converters where gate driver strength and PCB thermal design are tightly coupled.

Availability

PH2625L,115 is available at Aetrix Electronics and suitable for DC-to-DC converters, notebook computer VRMs, and industrial switched-mode power supplies requiring stable component supply and long-term production continuity.

Supply support for PH2625L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The PH2625L,115 belongs to Nexperia's TrenchMOS™ logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and industrial power systems.

FAQ

What is the maximum continuous drain current rating for PH2625L,115 at 100 °C mounting base temperature?

The PH2625L,115 supports 63 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints of the LFPAK package and ensures safe operation within its 150 °C maximum junction temperature limit. The PH2625L,115 maintains stable R_DS(on) up to this temperature, enabling predictable loss calculation in thermal simulations.

Does PH2625L,115 have avalanche capability, and what are its rated energy levels?

Yes, the PH2625L,115 is rated for both repetitive and non-repetitive drain-source avalanche. It delivers 2.5 mJ repetitive avalanche energy (EDS(AL)R) and 250 mJ non-repetitive avalanche energy (EDS(AL)S) under defined test conditions (V_GS = 10 V, unclamped inductive load). These ratings are confirmed in Table 4 and support robustness against inductive switching transients in DC-DC and motor drive applications. The PH2625L,115 leverages TrenchMOS™ structure to sustain these events without parameter degradation.

Can PH2625L,115 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - while the PH2625L,115 is a logic-level MOSFET with V_GS(th) as low as 1.0 V, its R_DS(on) rises significantly at 3.3 V gate drive (not characterized in datasheet). Full enhancement requires ≥4.5 V for guaranteed 4.1 mΩ performance. Driving directly from 3.3 V GPIO risks excessive conduction loss and thermal runaway. A dedicated gate driver or level shifter is required to deliver 4.5–10 V to the PH2625L,115 gate for reliable operation.

What is the thermal resistance from junction to ambient for PH2625L,115, and how is it measured?

The PH2625L,115 datasheet does not specify R_th(j-a) (junction-to-ambient) because thermal performance depends entirely on PCB layout. Instead, it specifies R_th(j-mb) = 2 K/W (junction-to-mounting-base), measured with the mounting base soldered to a 1 cm² 2 oz copper pad. Ambient thermal resistance is determined by system-level heatsinking - e.g., adding thermal vias and internal planes can reduce effective R_th(j-a) to ~35 K/W. The PH2625L,115 relies on this controlled mounting base path, not ambient convection.

Is PH2625L,115 automotive qualified, and what is its qualification status?

No, the PH2625L,115 is not automotive qualified. Per Section 9.4 of the datasheet, "Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use." The PH2625L,115 is qualified for industrial and computing applications only, with operating temperature range -55 °C to +150 °C but without AEC-Q101 stress testing or automotive-specific reliability screening. For automotive use, select Nexperia's AEC-Q101-qualified equivalents such as PMV21XNR series.

PH2625L,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PH2625L,115 FAQ

1.How can I place an order for PH2625L,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH2625L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH2625L,115 reliable?

The price and inventory of PH2625L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH2625L,115 is usually 5 days.

3.What payment methods are accepted for PH2625L,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH2625L,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH2625L,115?

PH2625L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH2625L,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH2625L,115?

For technical support, including PH2625L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH2625L,115 requirements.

6.How does Aetrix verify that PH2625L,115 is sourced from the original manufacturer or authorized distributors?

All PH2625L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH2625L,115 meets industry standards.

7.What is the process for return or replacement of PH2625L,115?

All PH2625L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH2625L,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH2625L,115 part is unused and in its original packaging.

Return procedure for PH2625L,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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