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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PH3230S,115

Name: PH3230S,115
Brand: Nexperia USA Inc.
SKU: PH3230S,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH3230S,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PH3230S,115.pdf

Description:: MOSFET N-CH 30V 100A LFPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PH3230S,115 from NXP Semiconductors is an N-channel TrenchMOS intermediate-level power MOSFET in LFPAK (SOT669) package, rated for 30 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 2.7 mΩ R_DS(on) at V_GS = 10 V / I_D = 25 A. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and notebook motherboard VRMs.

For engineers reviewing the PH3230S,115 datasheet, PH3230S,115 pinout, PH3230S,115 application, or PH3230S,115 equivalent, key selection criteria include its low R_DS(on) at logic-level gate drive (4.5 V), 2 K/W junction-to-mounting-base thermal resistance, and avalanche energy rating of 250 mJ (non-repetitive).

Technical Context

This device uses TrenchMOS technology to achieve low conduction losses and fast switching with Q_GD = 13 nC and Q_G(tot) = 42 nC at V_DS = 10 V / I_D = 50 A. Its gate threshold voltage (V_GS(th)) ranges from 1 V to 3 V, enabling compatibility with 3.3 V and 5 V logic-level drivers.

The integrated source-drain diode has V_SD = 0.8–1.2 V at I_S = 25 A and t_rr = 46 ns under specified conditions, supporting high-frequency synchronous rectification. Thermal design is simplified by direct mounting base (drain-connected) with R_th(j-mb) = 2 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V input DC-DC stages and notebook CPU/GPU VRMs.
R_DS(on)	2.7 mΩ (typ.) at V_GS = 10 V - Enables <1.7 W conduction loss at 100 A, reducing heatsink requirements.
I_D (cont)	100 A at T_mb = 25 °C - Supports high-current single-phase buck stages without paralleling.
Q_G(tot)	42 nC - Low gate charge enables efficient 500 kHz–1 MHz switching with standard gate drivers.
R_th(j-mb)	2 K/W - Direct thermal path to PCB copper allows >50 W power dissipation with 25 °C temperature rise over mounting base.
E_DS(AL)S	250 mJ (non-repetitive) - Withstands unclamped inductive turn-off events in SMPS primary-side snubbers or motor drives.
V_GS(th)	1–3 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO or dedicated logic-level gate drivers.

Pinout & Package

PH3230S,115 is housed in the SOT669 (LFPAK) plastic surface-mount package, featuring a thermally enhanced mounting base connected internally to the drain terminal. The package supports high-current PCB routing via exposed drain pad and offers superior thermal performance versus SO-8 or DPAK.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low Q_GS = 21 nC ensures fast, low-loss turn-on without gate oscillation.
Mounting base (mb)	Drain (D)	Exposed drain pad provides low-inductance, high-current drain connection and primary thermal path to PCB.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V gate drive	5 mΩ (typ.) - Enables full enhancement with 3.3 V logic, eliminating level-shifters in compact VRMs.
Thermally optimized LFPAK package	R_th(j-mb) = 2 K/W - Delivers 62.5 W total power dissipation with minimal board area vs. D²PAK.
High peak current capability	I_DM = 300 A (10 µs pulse) - Supports surge currents in server PSU inrush limiting or motor stall protection.
Fast reverse recovery diode	t_rr = 46 ns - Reduces switching loss and EMI in synchronous rectifier configurations.
Avalanche ruggedness	E_DS(AL)S = 250 mJ - Allows safe operation in unclamped inductive switching without external snubbers.

Applications

Computer Motherboards

DC-to-DC Converters

Use Scenario: High-current CPU/GPU voltage regulation on ATX or Mini-ITX motherboards.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converters operating at 300–1000 kHz.

Use Value: 2.7 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 5 mΩ devices, improving VR efficiency at 100 A load.

Use Scenario: Primary-side high-side switch in isolated forward or active-clamp forward converters.

IC Role / Device Role / Timing Role: Main switching FET with 30 V rating suitable for 24 V input telecom or industrial PSUs.

Use Value: 250 mJ non-repetitive avalanche energy eliminates need for external RCD snubber during transformer reset.

Notebook Computers

Switched-Mode Power Supplies

Use Scenario: Compact, high-efficiency VRMs for mobile CPUs in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: Low-voltage, high-current output stage FET with logic-level gate compatibility.

Use Value: 1–3 V V_GS(th) ensures robust turn-on using embedded controller GPIO, simplifying power sequencing.

Use Scenario: Secondary-side synchronous rectifier in 12 V/19 V AC-DC adapters and laptop chargers.

IC Role / Device Role / Timing Role: Fast-recovery body diode used for zero-voltage switching (ZVS) assist.

Use Value: 46 ns t_rr minimizes reverse recovery loss and improves light-load efficiency above 90%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R5-30YL	R_DS(on) = 3.5 mΩ (typ.) at V_GS = 10 V; Q_G(tot) = 48 nC; same SOT669 package.	Higher R_DS(on) increases conduction loss by ~26% at 100 A; identical thermal footprint.	Select when cost sensitivity outweighs 0.8 W extra loss per FET at full load.
IPB030N04LG	R_DS(on) = 3.0 mΩ (typ.) at V_GS = 10 V; Q_G(tot) = 52 nC; TO-263 (D²PAK) package.	Larger footprint and higher R_th(j-c) (3.5 K/W) requires more PCB copper area for equivalent thermal performance.	Select only if existing layout uses D²PAK and board rework is prohibitive.

Compared with PSMN3R5-30YL and IPB030N04LG, PH3230S,115 delivers the lowest R_DS(on) in LFPAK, enabling highest power density in space-constrained VRMs while maintaining gate-drive simplicity and avalanche robustness.

Availability

PH3230S,115 is available at Aetrix Electronics and suitable for computer motherboards, DC-to-DC converters, and notebook computers requiring stable component supply and long-term industrial lifecycle support.

Supply support for PH3230S,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PH3230S,115 belongs to NXP's TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where thermal density and gate-drive simplicity are critical.

FAQ

Is PH3230S,115 suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1 V to 3 V and R_DS(on) = 5 mΩ (typ.) at V_GS = 4.5 V, PH3230S,115 achieves full enhancement using standard 3.3 V logic outputs. Gate charge remains low (Q_G(tot) = 42 nC), ensuring fast switching without excessive driver stress.

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the maximum continuous drain current is 63 A, as specified in Table 4 (Limiting Values). This derating reflects thermal limits imposed by R_th(j-mb) = 2 K/W and junction temperature cap of 150 °C.

Does PH3230S,115 have an integrated body diode, and what are its characteristics?

Yes. It features an integrated source-drain diode with V_SD = 0.8–1.2 V at I_S = 25 A and reverse recovery time t_rr = 46 ns under specified test conditions (I_S = 20 A, dI_S/dt = −50 A/µs, V_DS = 25 V, T_j = 25 °C). This supports synchronous rectification up to ~1 MHz.

Can PH3230S,115 be used in avalanche mode, and what is its energy rating?

Yes. PH3230S,115 is rated for non-repetitive drain-source avalanche energy E_DS(AL)S = 250 mJ under unclamped inductive switching (V_GS = 10 V, I_D = 50 A, V_sup ≤ 15 V, R_GS = 50 Ω). Repetitive avalanche energy is rated at 2.5 mJ, suitable for limited transient clamping.

PH3230S,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PH3230S,115 FAQ

1.How can I place an order for PH3230S,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH3230S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH3230S,115 reliable?

The price and inventory of PH3230S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH3230S,115 is usually 5 days.

3.What payment methods are accepted for PH3230S,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH3230S,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH3230S,115?

PH3230S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH3230S,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH3230S,115?

For technical support, including PH3230S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH3230S,115 requirements.

6.How does Aetrix verify that PH3230S,115 is sourced from the original manufacturer or authorized distributors?

All PH3230S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH3230S,115 meets industry standards.

7.What is the process for return or replacement of PH3230S,115?

All PH3230S,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH3230S,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH3230S,115 part is unused and in its original packaging.

Return procedure for PH3230S,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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