NXP Semiconductors PH3855L,115

Overview

PH3855L,115 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 55 V V_DS, 24 A continuous drain current at 5 V gate drive, and 32–36 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-efficiency power switch in 12 V/24 V load control, DC-DC converters, and motor/solenoid drivers.

For engineers reviewing the PH3855L,115 datasheet, PH3855L,115 pinout, PH3855L,115 application, or PH3855L,115 equivalent, key selection criteria include logic-compatible gate threshold (V_GS(th) = 1–2 V), low R_DS(on) at 4.5 V/5 V drive, avalanche energy rating (40 mJ), thermal resistance (3 K/W), and SOT669 mounting-base thermal path.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility-enabling direct interface with 3.3 V and 5 V microcontrollers without level-shifting. Its 4-pin LFPAK package integrates the drain to the mounting base for optimal thermal performance and high-current capability.

The PH3855L,115 features a robust body diode (V_SD = 0.85–1.2 V at 20 A), fast switching (t_d(on) = 17 ns, t_f = 72 ns), and specified avalanche ruggedness (E_DS(AL)S = 40 mJ), supporting reliable operation in inductive load switching and synchronous rectification.

Key Specifications

Pinout & Package

PH3855L,115 is housed in the LFPAK (SOT669) plastic surface-mount package, featuring an exposed mounting base electrically connected to the drain for low-inductance, high-current routing and enhanced thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Compared with PSMN2R0-30YLC and IPB180N04S4-02, the PH3855L,115 uniquely balances 55 V rating, logic-level gate, SOT669 thermal efficiency, and 24 A continuous capability-making it optimal for compact, 12–24 V industrial and automotive power switches where gate drive simplicity and avalanche robustness are prioritized over ultra-low R_DS(on).

Availability

PH3855L,115 is available at Aetrix Electronics and suitable for 12 V/24 V load switching, DC-DC converter designs, and motor/solenoid driver circuits requiring stable component supply across industrial, computing, and communications end markets.

Supply support for PH3855L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, IoT, and mobile applications.

The PH3855L,115 belongs to NXP's TrenchMOS logic-level power FET product line, engineered for high-efficiency, low-voltage power switching in space-constrained and thermally demanding applications such as computing power supplies and industrial control modules.

FAQ

What is the maximum continuous drain current for PH3855L,115 at 5 V gate drive?

The PH3855L,115 supports 24 A continuous drain current at T_mb = 25 °C and V_GS = 5 V, as specified in Table 1 (Quick reference data). This rating assumes adequate PCB copper area for thermal conduction from the mounting base, and derates to 17.2 A at T_mb = 100 °C per Table 4 (Limiting values). The PH3855L,115 maintains safe operation within its SOA up to 45 A pulsed (tp ≤ 10 µs).

Does PH3855L,115 require a gate driver IC when used with a 3.3 V microcontroller?

No, the PH3855L,115 does not require an external gate driver when driven by a 3.3 V microcontroller. Its gate-source threshold voltage (V_GS(th)) ranges from 1 V to 2 V at 25 °C, and it delivers usable R_DS(on) (≤45 mΩ) at V_GS = 4.5 V. The PH3855L,115 is explicitly designed as a logic-level FET to ensure full enhancement with standard 3.3 V and 5 V digital outputs.

What is the thermal resistance from junction to mounting base for PH3855L,115?

The PH3855L,115 has a thermal resistance R_th(j-mb) of 3 K/W, as stated in Table 5 (Thermal characteristics). This value reflects the junction-to-mounting-base path-critical because the mounting base is electrically connected to the drain and serves as the primary thermal interface. Effective heat sinking requires soldering the PH3855L,115's exposed drain pad to ≥2 cm² of 2-oz copper on the PCB.

Is PH3855L,115 suitable for avalanche-rated switching applications like solenoid control?

Yes, the PH3855L,115 is explicitly rated for unclamped inductive switching with E_DS(AL)S = 40 mJ at T_j(init) = 25 °C, ID = 30 A, and V_sup ≤ 55 V (Table 4). This avalanche ruggedness makes the PH3855L,115 appropriate for driving solenoids, relays, and brushed DC motors where flyback energy must be absorbed internally without external snubbers.

What package type does PH3855L,115 use, and how many pins does it have?

The PH3855L,115 uses the LFPAK package (SOT669), a plastic single-ended surface-mount outline with four electrical terminals: three source pins (1, 2, 3), one gate pin (4), and an exposed mounting base electrically connected to the drain. The SOT669 footprint is standardized per JEDEC MO-235 and provides superior thermal and electrical performance versus traditional SO-8 or DPAK packages.